Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells

Transition metal oxides (TMOs) have recently demonstrated to be a good alternative to boron/phosphorous doped layers in crystalline silicon heterojunction solar cells. In this work, the interface between n-type c-Si (n-Si) and three thermally evaporated TMOs (MoO3, WO3, and V2O5) was investigated by transmission electron microscopy, secondary ion-mass, and x-ray photoelectron spectroscopy. For the oxides studied, surface passivation of n-Si was attributed to an ultra-thin (1.9–2.8 nm) SiOx~1.5 interlayer formed by chemical reaction, leaving oxygen-deficient species (MoO, WO2, and VO2) as by-products. Carrier selectivity was also inferred from the inversion layer induced on the n-Si surface, a result of Fermi level alignment between two materials with dissimilar electrochemical potentials (work function difference ¿¿ = 1 eV). Therefore, the hole-selective and passivating functionality of these TMOs, in addition to their ambient temperature processing, could prove an effective means to lower the cost and simplify solar cell processing.Postprint (author's final draft

Thermal emission of macroporous silicon chirped photonic crystals

Postprint (author's final draft

Mechanical properties of Al2O3 inverse opals by means of nanoindentation

In order to understand the mechanical behaviour of Al2O3 inverse opals, nanoindentation techniques have been implemented in material layers with three different microstructures, in terms of hollow or polystyrene spheres, with Al2O3 shells of distinct wall thickness. Different indenter tip geometries as well as contact loading conditions have been used, in order to induce different stress field and fracture events to the layers. Field emission scanning electron microscopy and focused ion beam have been employed to understand accommodation of plastic deformation induced during the indentation process. Results show that materials with polystyrene spheres exhibit higher hardness and modulus under sharp indentation, and cracking resistance under spherical indentation. Furthermore, deformation is discerned to be mainly governed by the rotation of the microspheres. In the case of the inverse opals made of hollow spheres, the main deformation mechanisms activated under indentation are the rearrangement and densification of themPostprint (author's final draft

Market impact under a new regulatory regime: Credit rating agencies in Europe

We investigate whether there are any identifiable differences in market perceptions of rating news released by Moody’s, S&P and Fitch following the establishment of a new regulatory regime in July 2011, when the European Securities and Markets Authority assumed responsibility for rating agencies’ regulation in Europe. We focus the analysis on the impact of bank rating actions on stock returns and volatility during 2008-2013. Among the intended effects of the new regulatory regime are reduced market impact of rating actions and enhanced market stability, yet we find very mixed evidence. Differentials in market responses across CRAs are identified

Fabricació de nanoestructures plasmòniques tridimensionals

En aquest article es demostra l'ús de la deposició induïda per un feix d'electrons focalitzat (FEBID) per a la fabricació de nanoestructures d'or per a aplicacions d'òptica de plasmons. S'investiguen els efectes del material del substrat i dels paràmetres de deposició, com ara el corrent del feix i la pressió de vapor d'aigua, sobre el ritme de creixement i la puresa de l'or. S'ha emprat una recuita ex situ de la mostra com a mètode de millora de la puresa del material dipositat. Les mesures òptiques de dispersió sobre les estructures purificades evidencien que suporten plasmons de superfície localitzats. Aquest mètode de fabricació permet el creixement d'estructures plasmòniques amb una elevada relació d'aspecte i facilita l'escriptura en superfícies no planes

Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells

Transition metal oxides (TMOs) have recently been proved to efficiently serve as hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the present work, two TMO/c-Si heterojunctions are explored using MoO3 (reference) and V2O5 as an alternative candidate. It has been found that V2O5 devices present larger (16% improvement) power conversion efficiency mainly due to their higher open-circuit voltage. While V2O5/c-Si devices with textured front surfaces exhibit larger short-circuit currents, it is also observed that flat solar cell architectures allow for passivation of the V2O5/n-Si interface, giving significant carrier lifetimes of 200 µs (equivalent to a surface recombination velocity of Seff ~140 cm s-1) as derived from impedance analysis. As a consequence, a significant open-circuit voltage of 662 mV is achieved. It is found that, at the TMO/c-Si contact, a TMO work function enhancement ¿FTMO occurs during the heterojunction formation with the consequent dipole layer enlargement ¿’=¿+¿FTMO. Our results provide new insights into the TMO/c-Si contact energetics, carrier transport across the interface and surface recombination allowing for further understanding of the nature of TMO/c-Si heterojunctions.Peer ReviewedPostprint (published version

Controlling Plateau-Rayleigh instabilities during the reorganization of silicon macropores in the Silicon Millefeuille process

The reorganization through high-temperature annealing of closely-packed pore arrays can be exploited to create ultra-thin (<20 µm) monocrystalline silicon layers that can work as cheap and flexible substrates for both the electronic and the photovoltaic industries. By introducing a periodic diameter modulation along deep etched pores, many thin layers can be produced from a single substrate and in a single technological process. Besides the periodicity, the exact shape of the modulation also has a profound impact on the process and subtle profile changes can lead to important differences on the process outcome. In this paper we study both theoretically and experimentally the effect of the initial profile on the pore reorganization dynamics and the morphology of the thin layers obtained through annealing. We show that process reliability, annealing time and final layer characteristics, all can be engineered and optimized by precisely controlling the initial pore profile.Postprint (published version

Effects of photon reabsorption phenomena in confocal micro-photoluminescence measurements in crystalline silicon

Confocal micro-photoluminescence (PL) spectroscopy has become a powerful characterization technique for studying novel photovoltaic (PV) materials and structures at the micrometer level. In this work, we present a comprehensive study about the effects and implications of photon reabsorption phenomena on confocal micro-PL measurements in crystalline silicon (c-Si), the workhorse material of the PV industry. First, supported by theoretical calculations, we show that the level of reabsorption is intrinsically linked to the selected experimental parameters, i.e., focusing lens, pinhole aperture, and excitation wavelength, as they define the spatial extension of the confocal detection volume, and therefore, the effective photon traveling distance before collection. Second, we also show that certain sample properties such as the reflectance and/or the surface recombination velocity can also have a relevant impact on reabsorption. Due to the direct relationship between the reabsorption level and the spectral line shape of the resulting PL emission signal, reabsorption phenomena play a paramount role in certain types of micro-PL measurements. This is demonstrated by means of two practical and current examples studied using confocal PL, namely, the estimation of doping densities in c-Si and the study of back-surface and/or back-contacted Si devices such as interdigitated back contact solar cells, where reabsorption processes should be taken into account for the proper interpretation and quantification of the obtained PL data.Peer ReviewedPostprint (published version

Reduced graphene oxide supported piperazine in aminocatalysis

Reduced graphene oxide (rGO) has been used as a support for piperazine to provide heterogeneous bifunctional organocatalyst (rGO-NH) that is able to efficiently promotvintage organic transformations such as Knoevenagel, Michael and aldol reactions. The obtained results suggest a significant role of the support in the course of these reactionsWe thank the Spanish Government (CTQ-2012-35957) and CAM (AVANCAT CS2009/PPQ-1634) for financial support. E.R. thanks the Spanish Ministry for a predoctoral fellowship (FPU/AP-2010-0807). R.S. thanks the Spanish Ministry of Science for a postdoctoral contract (PTQ-11-04601

Three-dimensional metallo-dielectric selective thermal emitters with high-temperature stability for thermophotovoltaic applications

Selective thermal emitters concentrate most of their spontaneous emission in a spectral band much narrower than a blackbody. When used in a thermophovoltaic energy conversion system, they become key elements defining both its overall system efficiency and output power. Selective emitters' radiation spectra must be designed to match their accompanying photocell's band gap and simultaneously, withstand high temperatures (above 1000 K) for long operation times. The advent of nanophotonics has allowed the engineering of very selective emitters and absorbers; however, thermal stability remains a challenge since nanostructures become unstable at temperatures much below the melting point of the used materials. In this paper we explore a hybrid 3D dielectric-metallic structure that combines the higher thermal stability of a monocrystalline 3D silicon scaffold with the optical properties of a thin platinum film conformally deposited on top. We show experimentally that these structures exhibit a selective emission spectrum suitable for TPV applications and that they are thermally stable at temperatures up to 1100 K. These structures are ideal in combination with HI-V semiconductors in the range E-g=0.4-0.55 eV such as InGaAsSb (E-g=0.5-0.6 eV) and InAsSbP (E-g=0.3-0.55 eV). (C) 2014 Elsevier B.V. All rights reserved.Peer ReviewedPostprint (author’s final draft