Relación entre la variación horaria de la concentración de polen de Púmtago y la meteorología

XV lnternational A.P.L.E. Symposium of Palynolog

Conidios en la atmósfera de la ciudad de Mérida

XV lnternational A.P.L.E. Symposium of Palynolog

Semejanzas y diferencias entre dos estaciones aerobiológicas

XV lnternational A.P.L.E. Symposium of Palynolog

High temperature behavior of GaN HEMT devices on Si(111) and sapphire substrates.

A study of the high temperature DC performance of nitride high electron mobility transistors (HEMTs) on Si(111) and sapphire substrates with different gate lengths is reported. All single gate transistors decrease their drain current (ID) and transconductance (gm) from room temperature (RT) up to 350 ºC, mainly due to the electron mobility reduction by optical phonon scattering. At RT, HEMTs on Si(111) present higher ID and gm than transistors on sapphire, probably related to their lower self-heating. As devices are heated, these differences tend to disappear, indicating that the substrate thermal conductivity becomes less important. Compact devices have low relative reduction in ID and gm values with temperature, since shorter gate lengths lead to higher fields under the gate and lower temperature dependence of the drift velocit

Cytosolic NUAK1 Enhances ATP Production by Maintaining Proper Glycolysis and Mitochondrial Function in Cancer Cells

Indexación: Scopus.NUAK1 is an AMPK-related kinase located in the cytosol and the nucleus, whose expression associates with tumor malignancy and poor patient prognosis in several cancers. Accordingly, NUAK1 was associated with metastasis because it promotes cell migration and invasion in different cancer cells. Besides, NUAK1 supports cancer cell survival under metabolic stress and maintains ATP levels in hepatocarcinoma cells, suggesting a role in energy metabolism in cancer. However, the underlying mechanism for this metabolic function, as well as its link to NUAK1 subcellular localization, is unclear. We demonstrated that cytosolic NUAK1 increases ATP levels, which associates with increased mitochondrial respiration, supporting that cytosolic NUAK1 is involved in mitochondrial function regulation in cancer cells. NUAK1 inhibition led to the formation of “donut-like” structures, providing evidence of NUAK1-dependent mitochondrial morphology regulation. Additionally, our results indicated that cytosolic NUAK1 increases the glycolytic capacity of cancer cells under mitochondrial inhibition. Nuclear NUAK1 seems to be involved in the metabolic switch to glycolysis. Altogether, our results suggest that cytosolic NUAK1 participates in mitochondrial ATP production and the maintenance of proper glycolysis in cancer cells. Our current studies support the role of NUAK1 in bioenergetics, mitochondrial homeostasis, glycolysis and metabolic capacities. They suggest different metabolic outcomes depending on its subcellular localization. The identified roles of NUAK1 in cancer metabolism provide a potential mechanism relevant for tumor progression and its association with poor patient prognosis in several cancers. Further studies could shed light on the molecular mechanisms involved in the identified metabolic NUAK1 functions. © Copyright © 2020 Escalona, Muñoz, Pincheira, Elorza and Castro.https://www.frontiersin.org/articles/10.3389/fonc.2020.01123/ful

Aluminium incorporation in AlGaN/GaN heterostructures: a comparative study by ion beam analysis and X-ray diffraction

The Al content in AlxGa1 − xN/GaN heterostructures has been determined by X-ray diffraction (XRD) and contrasted with absolute measurements from ion beam analysis (IBA) methods. For this purpose, samples with 0.1bxb0.3 grown by metal organic chemical vapour deposition on sapphire substrates have been studied. XRD and IBA corroborate the good epitaxial growth of the AlGaN layer, which slightly deteriorates with the incorporation of Al for xN0.2. The assessment of Al incorporation by XRD is quite reliable regarding the average value along the sample thickness. However, XRD analysis tends to overestimate the Al fraction at low contents, which is attributed to the presence of strain within the layer. For the highest Al incorporation, IBA detects a certain Al in-depth compositional profile that should be considered for better XRD data analysis

Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT

The impact of in situ low-power plasma pretreatment, prior to silicon-nitride (SiN) deposition, was investigated in AlGaN/GaN high-electron mobility transistors (HEMTs). These studies reveal that the use of plasma in HEMT passivation reduces current-collapse and gate-lag effects. Such treatment is also beneficial to improve gate leakage, and from RF measurements, no degradation of was observed. These beneficial effects of the plasma pretreatment seem to be due to a significant reduction in interface charge density, as shown in this letter using GaN MIS devices, where a decrease of 60% was observed

Potential association of HCF164, a chloroplast nuclear-encoded thioredoxin-like protein, with Coffea SH9 resistance factor against Hemileia vastatrix

29th Conference of Association for the Science and Information on Coffee, 11 Sept. - 14 Sept. 2023 Hanoi, Vietnaminfo:eu-repo/semantics/publishedVersio