4,511 research outputs found
Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC),
the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon
system. Because of its radiation hardness and cost effectiveness, the n-on-p
silicon technology is a promising candidate for a large area pixel detector.
The paper reports on the joint development, by LPNHE and FBK of novel n-on-p
edgeless planar pixel sensors, making use of the active trench concept for the
reduction of the dead area at the periphery of the device. After discussing the
sensor technology, a complete overview of the electrical characterization of
several irradiated samples will be discussed. Some comments about detector
modules being assembled will be made and eventually some plans will be
outlined.Comment: 6 pages, 13 figures, to appear in the proceedings of the 2013 Nuclear
Science Symposium and Medical Imaging Conference. arXiv admin note: text
overlap with arXiv:1311.162
Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades
The development of n-on-p "edgeless" planar pixel sensors being fabricated at
FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the
High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A
characterizing feature of the devices is the reduced dead area at the edge,
achieved by adopting the "active edge" technology, based on a deep etched
trench, suitably doped to make an ohmic contact to the substrate. The project
is presented, along with the active edge process, the sensor design for this
first n-on-p production and a selection of simulation results, including the
expected charge collection efficiency after radiation fluence of comparable to those expected at HL-LHC (about
ten years of running, with an integrated luminosity of 3000 fb) for the
outer pixel layers. We show that, after irradiation and at a bias voltage of
500 V, more than 50% of the signal should be collected in the edge region; this
confirms the validity of the active edge approach.Comment: 20 pages, 9 figures, submitted to Nucl. Instr. and Meth.
Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC),
the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon
system. Because of its radiation hardness and cost effectiveness, the n-on-p
silicon technology is a promising candidate for a large area pixel detector.
The paper reports on the joint development, by LPNHE and FBK of novel n-on-p
edgeless planar pixel sensors, making use of the active trench concept for the
reduction of the dead area at the periphery of the device. After discussing the
sensor technology, and presenting some sensors' simulation results, a complete
overview of the electrical characterization of the produced devices will be
given.Comment: 9 pages, 9 figures, to appear in the proceedings of the 15th
International Workshops on Radiation Imaging Detector
Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans
to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon
technology is a promising candidate for the pixel upgrade thanks to its
radiation hardness and cost effectiveness, that allow for enlarging the area
instrumented with pixel detectors. We report on the development of novel n-in-p
edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of
the "active edge" concept for the reduction of the dead area at the periphery
of the device. After discussing the sensor technology and fabrication process,
we present device simulations (pre- and post-irradiation) performed for
different sensor configurations. First preliminary results obtained with the
test-structures of the production are shown.Comment: 6 pages, 5 figures, to appear in the proceedings of the 9th
International Conference on Radiation Effects on Semiconductor Materials
Detectors and Device
The experience of dysgeusia in allogenic hematopoietic cell transplantation survivors: A qualitative study
Background: Taste disorders are one of the most common side effects of treatment in oncology patients and often occur after allogeneic hematopoietic cell transplantation (allo-HCT). Dysgeusia is rarely a life-threatening complication, therefore, in many cases it does not receive close medical attention. Furthermore, information about this disorder is largely based on the clinician’s own experience. However, taste disorders, can impact on the quality of life in survivors of allo-HCT, and compromise their enjoyment of eating, food intake, weight and nutritional status. The number of performed annual transplantations continues to grow annually and the number of older long-term survivors increases. There is little literature that is focused on studies of survivors of allo-HCT with taste disorders. We conducted a qualitative descriptive study to explore experiences of dysgeusia in patients that have undergone of allo-HCT and examined what strategies they used to mitigate it. Methods: Using purposive sampling, survivors of allo-HCT were recruited. Audiotape interviews were conducted until data saturation was achieved. Each interview was transcribed verbatim, and content analyses were performed to extract significant themes and subthemes. Results: Three major themes embracing various aspects of allo-HCT survivors’ experiences were identified: 1) the shape of taste; 2) everything is irritating and it is arduous to eat; 3) finding new strategies to overcome the problems. Together, they highlight the experiences of survivors showing how taste disorders can affect the physical, psychological and social dimensions of a person for the rest of their life. Conclusions: A cumulative burden is the result of dysgeusia and its clinical course reinforced also by related symptoms. Healthcare professionals must focus their attention on the management of these symptoms and offer interventions to safeguard the patient’s social, physical and psychological well-being. Finally, further research is needed to explore the experiences of allo-HTC patients who have taste disorders throughout their cancer journey that introduces a more holistic approach which involves health professionals, caregivers and family members
Selective Mono-N-methylation of Primary Aromatic Amines by Dimethylcarbonate over Faujasite X- and Y-type Zeolites
Dimethylcarbonate as a Methylating Agent. The Selective Mono-C-methylation of Alkyl Aryl Sulfones
Models of organometallic complexes for optoelectronic applications
Organometallic complexes have potential applications as the optically active
components of organic light emitting diodes (OLEDs) and organic photovoltaics
(OPV). Development of more effective complexes may be aided by understanding
their excited state properties. Here we discuss two key theoretical approaches
to investigate these complexes: first principles atomistic models and effective
Hamiltonian models. We review applications of these methods, such as,
determining the nature of the emitting state, predicting the fraction of
injected charges that form triplet excitations, and explaining the sensitivity
of device performance to small changes in the molecular structure of the
organometallic complexes.Comment: To appear in themed issue of J. Mat. Chem. on the modelling of
material
Estudio del esfuerzo de rodadura en tractores articulados (4WD) y de tracción delantera asistida (FWA)
p.221-229En el autotransporte del tractor se producen tros tipos de pérdidas de transmisión, pérdidas por rodadura y pérdida por patinaje. Las pérdidas por transmisión conciernen al diseño de la misma, las pérdidas por patinaje y rodadura son las que más preocupan al productor (FWA y 4WD) comunes a nuestro mercado agrícola, sobre estas condiciones de suelo diferentes, suelo arado, cama de siembra y siembra directa. Los parámetros evaluados fueron: esfuerzos de rodadura fueron contrastados con las fórmulas de predicción de Wismer y Luth y de MCallister. Las conclusiones obtenidas fueron 1) La potencia pérdida en rodadura se incrementó en suelos de baja capacidad portante; 2) Para predecir esfuerzo de rodadura en tractores (FWA y 4WD) cuando transitan sobre suelos arados se puede utilizar la ecuación de predicción de Wismer y Luth; 3) El porcentaje de potencia del motor pérdida por rodadura fue mayor para el tractor FWA cuando transitó sobre suelos de baja capacidad portante, 4) La menor relación potencia pérdida en rodadura 7 potencia motor fue mejor para el 4 WD en suelo cama de siembra y suelo arado, no así en siembra directa y 5) Se encontró, sobre los suelos blandos, una relación directa entre profundidad de huella y el peso del tractor que lo transitó
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