Digital and analog TFET circuits: Design and benchmark

In this work, we investigate by means of simulations the performance of basic digital, analog, and mixed-signal circuits employing tunnel-FETs (TFETs). The analysis reviews and complements our previous papers on these topics. By considering the same devices for all the analysis, we are able to draw consistent conclusions for a wide variety of circuits. A virtual complementary TFET technology consisting of III-V heterojunction nanowires is considered. Technology Computer Aided Design (TCAD) models are calibrated against the results of advanced full-quantum simulation tools and then used to generate look-up-tables suited for circuit simulations. The virtual complementary TFET technology is benchmarked against predictive technology models (PTM) of complementary silicon FinFETs for the 10 nm node over a wide range of supply voltages (VDD) in the sub-threshold voltage domain considering the same footprint between the vertical TFETs and the lateral FinFETs and the same static power. In spite of the asymmetry between p- and n-type transistors, the results show clear advantages of TFET technology over FinFET for VDDlower than 0.4 V. Moreover, we highlight how differences in the I-V characteristics of FinFETs and TFETs suggest to adapt the circuit topologies used to implement basic digital and analog blocks with respect to the most common CMOS solutions

Digital and analog TFET circuits: Design and benchmark

In this work, we investigate by means of simulations the performance of basic digital, analog, and mixed-signal circuits employing tunnel-FETs (TFETs). The analysis reviews and complements our previous papers on these topics. By considering the same devices for all the analysis, we are able to draw consistent conclusions for a wide variety of circuits. A virtual complementary TFET technology consisting of III-V heterojunction nanowires is considered. Technology Computer Aided Design (TCAD) models are calibrated against the results of advanced full-quantum simulation tools and then used to generate look-up-tables suited for circuit simulations. The virtual complementary TFET technology is benchmarked against predictive technology models (PTM) of complementary silicon FinFETs for the 10 nm node over a wide range of supply voltages (VDD) in the sub-threshold voltage domain considering the same footprint between the vertical TFETs and the lateral FinFETs and the same static power. In spite of the asymmetry between p- and n-type transistors, the results show clear advantages of TFET technology over FinFET for VDDlower than 0.4 V. Moreover, we highlight how differences in the I-V characteristics of FinFETs and TFETs suggest to adapt the circuit topologies used to implement basic digital and analog blocks with respect to the most common CMOS solutions

Sub-10nm Transistors for Low Power Computing: Tunnel FETs and Negative Capacitance FETs

One of the major roadblocks in the continued scaling of standard CMOS technology is its alarmingly high leakage power consumption. Although circuit and system level methods can be employed to reduce power, the fundamental limit in the overall energy efficiency of a system is still rooted in the MOSFET operating principle: an injection of thermally distributed carriers, which does not allow subthreshold swing (SS) lower than 60mV/dec at room temperature. Recently, a new class of steep-slope devices like Tunnel FETs (TFETs) and Negative-Capacitance FETs (NCFETs) have garnered intense interest due to their ability to surpass the 60mV/dec limit on SS at room temperature. The focus of this research is on the simulation and design of TFETs and NCFETs for ultra-low power logic and memory applications. Using full band quantum mechanical model within the Non-Equilibrium Greens Function (NEGF) formalism, source-underlapping has been proposed as an effective technique to lower the SS in GaSb-InAs TFETs. Band-tail states, associated with heavy source doping, are shown to significantly degrade the SS in TFETs from their ideal value. To solve this problem, undoped source GaSb-InAs TFET in an i-i-n configuration is proposed. A detailed circuit-to-system level evaluation is performed to investigate the circuit level metrics of the proposed devices. To demonstrate their potential in a memory application, a 4T gain cell (GC) is proposed, which utilizes the low-leakage and enhanced drain capacitance of TFETs to realize a robust and long retention time GC embedded-DRAMs. The device/circuit/system level evaluation of proposed TFETs demonstrates their potential for low power digital applications. The second part of the thesis focuses on the design space exploration of hysteresis-free Negative Capacitance FETs (NCFETs). A cross-architecture analysis using HfZrOx ferroelectric (FE-HZO) integrated on bulk MOSFET, fully-depleted SOI-FETs, and sub-10nm FinFETs shows that FDSOI and FinFET configurations greatly benefit the NCFET performance due to their undoped body and improved gate-control which enables better capacitance matching with the ferroelectric. A low voltage NC-FinFET operating down to 0.25V is predicted using ultra-thin 3nm FE-HZO. Next, we propose one-transistor ferroelectric NOR type (Fe-NOR) non-volatile memory based on HfZrOx ferroelectric FETs (FeFETs). The enhanced drain-channel coupling in ultrashort channel FeFETs is utilized to dynamically modulate memory window of storage cells thereby resulting in simple erase-, program-and read-operations. The simulation analysis predicts sub-1V program/erase voltages in the proposed Fe-NOR memory array and therefore presents a significantly lower power alternative to conventional FeRAM and NOR flash memories

Nanowire Transistors and RF Circuits for Low-Power Applications

The background of this thesis is related to the steadily increasing demand of higher bandwidth and lower power consumption for transmitting data. The work aims at demonstrating how new types of structures, at the nanoscale, combined with what is referred to as exotic materials, can help benefit in electronics by lowering the consumed power, possibly by an order of magnitude, compared to the industry standard, silicon (Si), used today. Nanowires are semiconductor rods, with two dimensions at the nanoscale, which can be either grown with a bottom-up technique, or etched out with a top-down approach. The research interest concerning nanowires has gradually increasing for over two decades. Today, few have doubts that nanowires represent an attractive alternative, as scaling of planar structures has reached fundamental limits. With the enhanced electrostatics of a surrounding gate, nanowires offer the possibility of continued miniaturization, giving semiconductors a prolonged window of performance improvements. As a material choice, compound semiconductors with elements from group III and V (III-Vs), such as indium arsenide (InAs), have the possibility to dramatically decrease power consumption. The reason is the inherent electron transport properties of III-Vs, where an electron can travel, in the order of, 10 times faster than in Si. In the projected future, inclusion of III-Vs, as an extension to the Si-CMOS platform, seems almost inevitable, with many of the largest electronics manufacturing companies showing great interest. To investigate the technology potential, we have fabricated InAs nanowire metal-oxide-semiconductor field effect transistors (NW-FETs). The performance has been evaluated measuring both RF and DC characteristics. The best devices show a transconductance of 1.36 mS/µm (a device with a single nanowire, normalized to the nanowire circumference) and a maximum unilateral power gain at 57 GHz (for a device with several parallel nanowires), both values at a drive voltage of 0.5 V. The performance metrics are found to be limited by the capacitive load of the contact pads as well as the resistance in the non-gated segments of the nanowires. Using computer models, we have also been able to extract intrinsic transport properties, quantifying the velocity of charge carrier injection, which is the limiting property of semi-ballistic and ballistic devices. The value for our 45-nm-in-diameter nanowires, with 200 nm channel length, is determined to 1.7∙107 cm/s, comparable to other state-of-the-art devices at the same channel length. To demonstrate a higher level of functionality, we have connected several NW-FETs in a circuit. The fabricated circuit is a single balanced differential direct conversion mixer and is composed of three stages; transconductance, mixing, and transimpedance. The basic idea of the mixer circuit is that an information signal can either be extracted from or inserted into a carrier wave at a higher frequency than the information wave itself. It is the relative size of the first and the third stage that accounts for the circuit conversion gain. Measured circuits show a voltage conversion gain of 6 dB and a 3-dB bandwidth of 2 GHz. A conversion mixer is a vital component when building a transceiver, like those found in a cellphone and any other type of radio signal transmitting device. For all types of signals, noise imposes a fundamental limitation on the minimal, distinguishable amplitude. As transistors are scaled down, fewer carriers are involved in charge transport, and the impact of frequency dependent low-frequency noise gets relatively larger. Aiming towards low power applications, it is thus of importance to minimize the amount of transistor generated noise. Included in the thesis are studies of the level and origin of low-frequency 1/f-noise generated in NW-FETs. The measured noise spectral density is comparable to other non-planar devices, including those fabricated in Si. The data suggest that the level of generated noise can be substantially lowered by improving the high-k dielectric film quality and the channel interface. One significant discovery is that the part of the noise originating from the bulk nanowire, identified as mobility fluctuations, is comparably much lower than the measured noise level related to the nanowire surface. This result is promising as mobility fluctuations set the lower limit of what is achievable within a material system

Enhanced Hardware Security Using Charge-Based Emerging Device Technology

The emergence of hardware Trojans has largely reshaped the traditional view that the hardware layer can be blindly trusted. Hardware Trojans, which are often in the form of maliciously inserted circuitry, may impact the original design by data leakage or circuit malfunction. Hardware counterfeiting and IP piracy are another two serious issues costing the US economy more than $200 billion annually. A large amount of research and experimentation has been carried out on the design of these primitives based on the currently prevailing CMOS technology. However, the security provided by these primitives comes at the cost of large overheads mostly in terms of area and power consumption. The development of emerging technologies provides hardware security researchers with opportunities to utilize some of the otherwise unusable properties of emerging technologies in security applications. In this dissertation, we will include the security consideration in the overall performance measurements to fully compare the emerging devices with CMOS technology. The first approach is to leverage two emerging devices (Silicon NanoWire and Graphene SymFET) for hardware security applications. Experimental results indicate that emerging device based solutions can provide high level circuit protection with relatively lower performance overhead compared to conventional CMOS counterpart. The second topic is to construct an energy-efficient DPA-resilient block cipher with ultra low-power Tunnel FET. Current-mode logic is adopted as a circuit-level solution to countermeasure differential power analysis attack, which is mostly used in the cryptographic system. The third investigation targets on potential security vulnerability of foundry insider\u27s attack. Split manufacturing is adopted for the protection on radio-frequency (RF) circuit design

Design Automation and Application for Emerging Reconfigurable Nanotechnologies

In the last few decades, two major phenomena have revolutionized the electronic industry – the ever-increasing dependence on electronic circuits and the Complementary Metal Oxide Semiconductor (CMOS) downscaling. These two phenomena have been complementing each other in a way that while electronics, in general, have demanded more computations per functional unit, CMOS downscaling has aptly supported such needs. However, while the computational demand is still rising exponentially, CMOS downscaling is reaching its physical limits. Hence, the need to explore viable emerging nanotechnologies is more imperative than ever. This thesis focuses on streamlining the existing design automation techniques for a class of emerging reconfigurable nanotechnologies. Transistors based on this technology exhibit duality in conduction, i.e. they can be configured dynamically either as a p-type or an n-type device on the application of an external bias. Owing to this dynamic reconfiguration, these transistors are also referred to as Reconfigurable Field-Effect Transistors (RFETs). Exploring and developing new technologies just like CMOS, require tackling two main challenges – first, design automation flow has to be modified to enable tailor- made circuit designs. Second, possible application opportunities should be explored where such technologies can outsmart the existing CMOS technologies. This thesis targets the above two objectives for emerging reconfigurable nanotechnologies by proposing approaches for enabling an Electronic Design Automation (EDA) flow for circuits based on RFETs and exploring hardware security as an application that exploits the transistor-level dynamic reconfiguration offered by this technology. This thesis explains the bottom-up approach adopted to propose a logic synthesis flow by identifying new logic gates and circuit design paradigms that can particularly exploit the dynamic reconfiguration offered by these novel nanotechnologies. This led to the subsequent need of finding natural Boolean logic abstraction for emerging reconfigurable nanotechnologies as it is shown that the existing abstraction of negative unate logic for CMOS technologies is sub-optimal for RFETs-based circuits. In this direction, it has been shown that duality in Boolean logic is a natural abstraction for this technology and can truly represent the duality in conduction offered by individual transistors. Finding this abstraction paved the way for defining suitable primitives and proposing various algorithms for logic synthesis and technology mapping. The following step is to explore compatible physical synthesis flow for emerging reconfigurable nanotechnologies. Using silicon nanowire-based RFETs, .lef and .lib files have been provided which can provide an end-to-end flow to generate .GDSII file for circuits exclusively based on RFETs. Additionally, new approaches have been explored to improve placement and routing for circuits based on reconfigurable nanotechnologies. It has been demonstrated how these approaches led to superior results as compared to the native flow meant for CMOS. Lastly, the unique property of transistor-level reconfiguration offered by RFETs is utilized to implement efficient Intellectual Property (IP) protection schemes against adversarial attacks. The ability to control the conduction of individual transistors can be argued as one of the impactful features of this technology and suitably fits into the paradigm of security measures. Prior security schemes based on CMOS technology often come with large overheads in terms of area, power, and delay. In contrast, RFETs-based hardware security measures such as logic locking, split manufacturing, etc. proposed in this thesis, demonstrate affordable security solutions with low overheads. Overall, this thesis lays a strong foundation for the two main objectives – design automation, and hardware security as an application, to push emerging reconfigurable nanotechnologies for commercial integration. Additionally, contributions done in this thesis are made available under open-source licenses so as to foster new research directions and collaborations.:Abstract List of Figures List of Tables 1 Introduction 1.1 What are emerging reconfigurable nanotechnologies? 1.2 Why does this technology look so promising? 1.3 Electronics Design Automation 1.4 The game of see-saw: key challenges vs benefits for emerging reconfigurable nanotechnologies 1.4.1 Abstracting ambipolarity in logic gate designs 1.4.2 Enabling electronic design automation for RFETs 1.4.3 Enhanced functionality: a suitable fit for hardware security applications 1.5 Research questions 1.6 Entire RFET-centric EDA Flow 1.7 Key Contributions and Thesis Organization 2 Preliminaries 2.1 Reconfigurable Nanotechnology 2.1.1 1D devices 2.1.2 2D devices 2.1.3 Factors favoring circuit-flexibility 2.2 Feasibility aspects of RFET technology 2.3 Logic Synthesis Preliminaries 2.3.1 Circuit Model 2.3.2 Boolean Algebra 2.3.3 Monotone Function and the property of Unateness 2.3.4 Logic Representations 3 Exploring Circuit Design Topologies for RFETs 3.1 Contributions 3.2 Organization 3.3 Related Works 3.4 Exploring design topologies for combinational circuits: functionality-enhanced logic gates 3.4.1 List of Combinational Functionality-Enhanced Logic Gates based on RFETs 3.4.2 Estimation of gate delay using the logical effort theory 3.5 Invariable design of Inverters 3.6 Sequential Circuits 3.6.1 Dual edge-triggered TSPC-based D-flip flop 3.6.2 Exploiting RFET’s ambipolarity for metastability 3.7 Evaluations 3.7.1 Evaluation of combinational logic gates 3.7.2 Novel design of 1-bit ALU 3.7.3 Comparison of the sequential circuit with an equivalent CMOS-based design 3.8 Concluding remarks 4 Standard Cells and Technology Mapping 4.1 Contributions 4.2 Organization 4.3 Related Work 4.4 Standard cells based on RFETs 4.4.1 Interchangeable Pull-Up and Pull-Down Networks 4.4.2 Reconfigurable Truth-Table 4.5 Distilling standard cells 4.6 HOF-based Technology Mapping Flow for RFETs-based circuits 4.6.1 Area adjustments through inverter sharings 4.6.2 Technology Mapping Flow 4.6.3 Realizing Parameters For The Generic Library 4.6.4 Defining RFETs-based Genlib for HOF-based mapping 4.7 Experiments 4.7.1 Experiment 1: Distilling standard-cells from a benchmark suite 4.7.2 Experiment 2A: HOF-based mapping . 4.7.3 Experiment 2B: Using the distilled standard-cells during mapping 4.8 Concluding Remarks 5 Logic Synthesis with XOR-Majority Graphs 5.1 Contributions 5.2 Organization 5.3 Motivation 5.4 Background and Preliminaries 5.4.1 Terminologies 5.4.2 Self-duality in NPN classes 5.4.3 Majority logic synthesis 5.4.4 Earlier work on XMG 5.4.5 Classification of Boolean functions 5.5 Preserving Self-Duality 5.5.1 During logic synthesis 5.5.2 During versatile technology mapping 5.6 Advanced Logic synthesis techniques 5.6.1 XMG resubstitution 5.6.2 Exact XMG rewriting 5.7 Logic representation-agnostic Mapping 5.7.1 Versatile Mapper 5.7.2 Support of supergates 5.8 Creating Self-dual Benchmarks 5.9 Experiments 5.9.1 XMG-based Flow 5.9.2 Experimental Setup 5.9.3 Synthetic self-dual benchmarks 5.9.4 Cryptographic benchmark suite 5.10 Concluding remarks and future research directions 6 Physical synthesis flow and liberty generation 6.1 Contributions 6.2 Organization 6.3 Background and Related Work 6.3.1 Related Works 6.3.2 Motivation 6.4 Silicon Nanowire Reconfigurable Transistors 6.5 Layouts for Logic Gates 6.5.1 Layouts for Static Functional Logic Gates 6.5.2 Layout for Reconfigurable Logic Gate 6.6 Table Model for Silicon Nanowire RFETs 6.7 Exploring Approaches for Physical Synthesis 6.7.1 Using the Standard Place & Route Flow 6.7.2 Open-source Flow 6.7.3 Concept of Driver Cells 6.7.4 Native Approach 6.7.5 Island-based Approach 6.7.6 Utilization Factor 6.7.7 Placement of the Island on the Chip 6.8 Experiments 6.8.1 Preliminary comparison with CMOS technology 6.8.2 Evaluating different physical synthesis approaches 6.9 Results and discussions 6.9.1 Parameters Which Affect The Area 6.9.2 Use of Germanium Nanowires Channels 6.10 Concluding Remarks 7 Polymporphic Primitives for Hardware Security 7.1 Contributions 7.2 Organization 7.3 The Shift To Explore Emerging Technologies For Security 7.4 Background 7.4.1 IP protection schemes 7.4.2 Preliminaries 7.5 Security Promises 7.5.1 RFETs for logic locking (transistor-level locking) 7.5.2 RFETs for split manufacturing 7.6 Security Vulnerabilities 7.6.1 Realization of short-circuit and open-circuit scenarios in an RFET-based inverter 7.6.2 Circuit evaluation on sub-circuits 7.6.3 Reliability concerns: A consequence of short-circuit scenario 7.6.4 Implication of the proposed security vulnerability 7.7 Analytical Evaluation 7.7.1 Investigating the security promises 7.7.2 Investigating the security vulnerabilities 7.8 Concluding remarks and future research directions 8 Conclusion 8.1 Concluding Remarks 8.2 Directions for Future Work Appendices A Distilling standard-cells B RFETs-based Genlib C Layout Extraction File (.lef) for Silicon Nanowire-based RFET D Liberty (.lib) file for Silicon Nanowire-based RFET

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. With all these innovations and efforts, the transistor size is approaching the natural limitations of materials in the near future. The circuits are expected to compute in a more efficient way. From this perspective, new device concepts are desirable to exploit additional functionality. On the other hand, with the continuously increased device density on the chips, reducing the power consumption has become a key concern in IC design. To overcome the limitations of Complementary Metal-Oxide-Semiconductor (CMOS) technology in computing efficiency and power reduction, this thesis introduces the multiple- independent-gate Field-Effect Transistors (FETs) with silicon nanowires and FinFET structures. The device not only has the capability of polarity control, but also provides dual-threshold- voltage and steep-subthreshold-slope operations for power reduction in circuit design. By independently modulating the Schottky junctions between metallic source/drain and semiconductor channel, the dual-threshold-voltage characteristics with controllable polarity are achieved in a single device. This property is demonstrated in both experiments and simulations. Thanks to the compact implementation of logic functions, circuit-level benchmarking shows promising performance with a configurable dual-threshold-voltage physical design, which is suitable for low-power applications. This thesis also experimentally demonstrates the steep-subthreshold-slope operation in the multiple-independent-gate FETs. Based on a positive feedback induced by weak impact ionization, the measured characteristics of the device achieve a steep subthreshold slope of 6 mV/dec over 5 decades of current. High Ion/Ioff ratio and low leakage current are also simultaneously obtained with a good reliability. Based on a physical analysis of the device operation, feasible improvements are suggested to further enhance the performance. A physics-based surface potential and drain current model is also derived for the polarity-controllable Silicon Nanowire FETs (SiNWFETs). By solving the carrier transport at Schottky junctions and in the channel, the core model captures the operation with independent gate control. It can serve as the core framework for developing a complete compact model by integrating advanced physical effects. To summarize, multiple-independent-gate SiNWFETs and FinFETs are extensively studied in terms of fabrication, modeling, and simulation. The proposed device concept expands the family of polarity-controllable FETs. In addition to the enhanced logic functionality, the polarity-controllable SiNWFETs and FinFETs with the dual-threshold-voltage and steep-subthreshold-slope operation can be promising candidates for future IC design towards low-power applications

Strain engineered Si-Ge nanowire heterostructures and Josephson junction field-effect transistors for logic device applications

There has been relentless effort on the physical scaling of silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFETs) in pursuit of higher computing power in the past decades. Silicon and germanium (Ge) based nanowires are compatible with the standard Si process and promising for the ultimately scaled devices, by allowing the gate-all-around geometry and integration of strain engineering through radial heterostructures to address device-scaling limitations. In the first part of the thesis, advances in probing the strain of radial nanowire heterostructures and carrier mobility enhancement through strain engineering are presented. We present a sequence of structural characterization techniques for Ge-Si [subscript x] Ge [subscript 1-x] and Si-Si [subscript x] Ge [subscript 1-x] core-shell nanowires that extends to all types of Si-Ge radial nanowire heterostructures examined in the thesis. We combine planar and cross-sectional transmission electron microscopy to identify the crystal structure, orientation and morphology of the nanowire heterostructures. We then apply continuum elasticity model to calculate the strain distribution, which coupled with the lattice dynamic theory yields the Ge-Ge or Si-Si Raman modes under strain, showing good agreement with the experimental values acquired via Raman spectroscopy. We also study the electrical properties of Si [subscript x] Ge [subscript 1-x]-Si core-shell nanowires by fabricating and characterizing n-type MOSFETs, and show that the tensile strain in the Si shell leads to a 40% electron mobility enhancement compared to bare Si nanowire MOSFETs. Additionally, we demonstrate both n-type and p-type MOSFETs using Si [subscript x] Ge [subscript 1-x]-Ge-Si core-double-shell nanowires as channel, designed so that holes populate the Ge shell and electrons populate the Si shell, with mobility enhancement of both carriers thanks to the compressive and tensile strain in the respective region. We also extract the valence band offset from the decoupled hole transport in the two shells at low temperature, overcoming the issue that most techniques available to probe the band structure in planar heterostructures are not promptly applicable. Reducing the operation temperature provides an additional path for system optimization in addition to the shrinking of device geometry. In the second part of the thesis, we explore a Boolean logic device suitable for cryogenic computing. We execute a combined effort of modeling and experimental characterization to examine the feasibility of Josephson junction field-effect transistors (JJ-FETs) for logic device applications at low temperatures. JJ-FETs are similar to MOSFETs, with their source and drain electrodes being superconducting at the operation temperature. We develop a compact model for JJ-FETs operating in the short ballistic regime, and perform circuit level simulations to investigate the criteria of signal restoration and fan-out for JJ-FET logic gates. We also experimentally demonstrate the operation of JJ-FETs based on an InAs quantum well heterostructure platform. We perform self-consistent Poisson-Schrödinger simulations, finding different gate voltage regimes where carriers populate one or more subbands in different vertical positions of the heterostructure. Furthermore, we extend the short ballistic model to interpret the experimental data, and discuss the impact of a low oxide/channel interface quality on the implementation of practical JJ-FET logic devices.Electrical and Computer Engineerin

Robustness Analysis of Controllable-Polarity Silicon Nanowire Devices and Circuits

Substantial downscaling of the feature size in current CMOS technology has confronted digital designers with serious challenges including short channel effect and high amount of leakage power. To address these problems, emerging nano-devices, e.g., Silicon NanoWire FET (SiNWFET), is being introduced by the research community. These devices keep on pursuing Mooreâs Law by improving channel electrostatic controllability, thereby reducing the Off âstate leakage current. In addition to these improvements, recent developments introduced devices with enhanced capabilities, such as Controllable-Polarity (CP) SiNWFETs, which make them very interesting for compact logic cell and arithmetic circuits. At advanced technology nodes, the amount of physical controls, during the fabrication process of nanometer devices, cannot be precisely determined because of technology fluctuations. Consequently, the structural parameters of fabricated circuits can be significantly different from their nominal values. Moreover, giving an a-priori conclusion on the variability of advanced technologies for emerging nanoscale devices, is a difficult task and novel estimation methodologies are required. This is a necessity to guarantee the performance and the reliability of future integrated circuits. Statistical analysis of process variation requires a great amount of numerical data for nanoscale devices. This introduces a serious challenge for variability analysis of emerging technologies due to the lack of fast simulation models. One the one hand, the development of accurate compact models entails numerous tests and costly measurements on fabricated devices. On the other hand, Technology Computer Aided Design (TCAD) simulations, that can provide precise information about devices behavior, are too slow to timely generate large enough data set. In this research, a fast methodology for generating data set for variability analysis is introduced. This methodology combines the TCAD simulations with a learning algorithm to alleviate the time complexity of data set generation. Another formidable challenge for variability analysis of the large circuits is growing number of process variation sources. Utilizing parameterized models is becoming a necessity for chip design and verification. However, the high dimensionality of parameter space imposes a serious problem. Unfortunately, the available dimensionality reduction techniques cannot be employed for three main reasons of lack of accuracy, distribution dependency of the data points, and finally incompatibility with device and circuit simulators. We propose a novel technique of parameter selection for modeling process and performance variation. The proposed technique efficiently addresses the aforementioned problems. Appropriate testing, to capture manufacturing defects, plays an important role on the quality of integrated circuits. Compared to conventional CMOS, emerging nano-devices such as CP-SiNWFETs have different fabrication process steps. In this case, current fault models must be extended for defect detection. In this research, we extracted the possible fabrication defects, and then proposed a fault model for this technology. We also provided a couple of test methods for detecting the manufacturing defects in various types of CP-SiNWFET logic gates. Finally, we used the obtained fault model to build fault tolerant arithmetic circuits with a bunch of superior properties compared to their competitors