Low-Voltage Bulk-Driven Amplifier Design and Its Application in Implantable Biomedical Sensors

The powering unit usually represents a significant component of the implantable biomedical sensor system since the integrated circuits (ICs) inside for monitoring different physiological functions consume a great amount of power. One method to reduce the volume of the powering unit is to minimize the power supply voltage of the entire system. On the other hand, with the development of the deep sub-micron CMOS technologies, the minimum channel length for a single transistor has been scaled down aggressively which facilitates the reduction of the chip area as well. Unfortunately, as an inevitable part of analytic systems, analog circuits such as the potentiostat are not amenable to either low-voltage operations or short channel transistor scheme. To date, several proposed low-voltage design techniques have not been adopted by mainstream analog circuits for reasons such as insufficient transconductance, limited dynamic range, etc. Operational amplifiers (OpAmps) are the most fundamental circuit blocks among all analog circuits. They are also employed extensively inside the implantable biosensor systems. This work first aims to develop a general purpose high performance low-voltage low-power OpAmp. The proposed OpAmp adopts the bulk-driven low-voltage design technique. An innovative low-voltage bulk-driven amplifier with enhanced effective transconductance is developed in an n-well digital CMOS process operating under 1-V power supply. The proposed circuit employs auxiliary bulk-driven input differential pairs to achieve the input transconductance comparable with the traditional gate-driven amplifiers, without consuming a large amount of current. The prototype measurement results show significant improvements in the open loop gain (AO) and the unity-gain bandwidth (UGBW) compared to other works. A 1-V potentiostat circuit for an implantable electrochemical sensor is then proposed by employing this bulk-driven amplifier. To the best of the author’s knowledge, this circuit represents the first reported low-voltage potentiostat system. This 1-V potentiostat possesses high linearity which is comparable or even better than the conventional potentiostat designs thanks to this transconductance enhanced bulk-driven amplifier. The current consumption of the overall potentiostat is maintained around 22 microampere. The area for the core layout of the integrated circuit chip is 0.13 mm2 for a 0.35 micrometer process

DESIGN OF TWO STAGE BULK-DRIVEN OPERATIONAL TRANSCONDUCTANCE AMPLIFIER (OTA) WITH A HIGH GAIN FOR LOW VOLTAGE APPLICATION

An Operational Transconductance Amplifier (further abbreviated as OTA) is a voltage controlled current source used to produce an output current proportional to the input voltage. A schematic architecture for a 180nm OTA is presented in this thesis with the goal of improving the open-loop gain for a 0.9V supply voltage with a rail-to-rail bulk-driven input stage. Results show an open loop gain 97.14 dB with a power consumption of 3.33uW. An OTA with over 90 dB open loop gain and lower power consumption is highly suitable for low-voltage applications. The slew rate of the OTA is 0.05V/uS with a unity-gain bandwidth of 8.4MHz. A 10uA ideal bias current reference is utilized for the design. The phase margin is around 49.2 degrees. The threshold voltage for a 180nm N-channel Metal Oxide Semiconductor (also known as NMOS) device is around 400mV which restricts the low voltage applications in most amplifier circuits. The fourth terminal (bulk) of the MOS device is utilized to optimize the voltage headroom (Vds). The bulk terminal uses a much lesser source to drain voltage than the gate-driven transistors, and the transistors remain ON with an input voltage as low as 0.1V. A bulk-driven input stage ensures the amplification in the subthreshold region (input signal less than the threshold voltage of the MOS device). However, even with the bulk input MOS device, a rail-to-rail input stage is employed to improve the dynamic range for the input signal from 0V to 0.9V with a supply voltage of 0.9V. The fluctuation in open loop gain concerning the change in input signal in the published research is because of the constant instability in the intrinsic transconductance of the input devices. A possible solution is presented in this thesis by adding a second dominant pole to the circuit (i.e., second stage for the OTA), which reduces the dependency of intrinsic transconductance (bulk-driven device) on the total open loop gain of the amplifier. Thus, a significant gain of 97.14 dB with minimal fluctuations is achieved. Furthermore, adding a second stage improves the gain by distributing the dependency of the gain due to the first stage to both poles in the circuit. Hence, the problem of fluctuating transconductance of the input stage is resolved by the constant intrinsic transconductance of the MOS near the second pole (M19). To improve the gain, a folded cascoded amplifier connected with the input stage results in a better impedance (in the first stage) known as the gain stage. In the second stage, a large PMOS common source amplifier gives a good output current compared to the input stage to enhance the output swing and drive a purely capacitive load of 0.5pF. Furthermore, a miller capacitance is used to compensate for the frequency between the first and the second stage and improving the unity-gain bandwidth. An additional biasing circuit in the second stage amplifies the current output of the first stage and thus improving the slew rate of the entire device. In addition, the biasing circuit resolves the biasing issues for the second-stage common-source amplifier. It improves the output swing of the device to obtain a clean/undistorted output waveform. All the simulations are carried out in the LTSpice simulation tool to test the waveforms and bode plot for open loop gain and phase margin (49.2 degrees) at different processes (slow, typical, and fast), input voltages (0-0.9V), supply voltage (0.8V, 0.9V, 1.0V) and temperatures (-10 to 100 degree C)

Performance enhancement in the desing of amplifier and amplifier-less circuits in modern CMOS technologies.

In the context of nowadays CMOS technology downscaling and the increasing demand of high performance electronics by industry and consumers, analog design has become a major challenge. On the one hand, beyond others, amplifiers have traditionally been a key cell for many analog systems whose overall performance strongly depends on those of the amplifier. Consequently, still today, achieving high performance amplifiers is essential. On the other hand, due to the increasing difficulty in achieving high performance amplifiers in downscaled modern technologies, a different research line that replaces the amplifier by other more easily achievable cells appears: the so called amplifier-less techniques. This thesis explores and contributes to both philosophies. Specifically, a lowvoltage differential input pair is proposed, with which three multistage amplifiers in the state of art are designed, analysed and tested. Moreover, a structure for the implementation of differential switched capacitor circuits, specially suitable for comparator-based circuits, that features lower distortion and less noise than the classical differential structures is proposed, an, as a proof of concept, implemented in a ΔΣ modulator

Low-power CMOS front-ends for wireless personal area networks

The potential of implementing subthreshold radio frequency circuits in deep sub-micron CMOS technology was investigated for developing low-power front-ends for wireless personal area network (WPAN) applications. It was found that the higher transconductance to bias current ratio in weak inversion could be exploited in developing low-power wireless front-ends, if circuit techniques are employed to mitigate the higher device noise in subthreshold region. The first fully integrated subthreshold low noise amplifier was demonstrated in the GHz frequency range requiring only 260 μW of power consumption. Novel subthreshold variable gain stages and down-conversion mixers were developed. A 2.4 GHz receiver, consuming 540 μW of power, was implemented using a new subthreshold mixer by replacing the conventional active low noise amplifier by a series-resonant passive network that provides both input matching and voltage amplification. The first fully monolithic subthreshold CMOS receiver was also implemented with integrated subthreshold quadrature LO (Local Oscillator) chain for 2.4 GHz WPAN applications. Subthreshold operation, passive voltage amplification, and various low-power circuit techniques such as current reuse, stacking, and differential cross coupling were combined to lower the total power consumption to 2.6 mW. Extremely compact resistive feedback CMOS low noise amplifiers were presented as a cost-effective alternative to narrow band LNAs using high-Q inductors. Techniques to improve linearity and reduce power consumption were presented. The combination of high linearity, low noise figure, high broadband gain, extremely small die area and low power consumption made the proposed LNA architecture a compelling choice for many wireless applications.Ph.D.Committee Chair: Laskar, Joy; Committee Member: Chakraborty, Sudipto; Committee Member: Chang, Jae Joon; Committee Member: Divan, Deepakraj; Committee Member: Kornegay, Kevin; Committee Member: Tentzeris, Emmanoui

An Offset Cancelation Technique for Latch Type Sense Amplifiers

An offset compensation technique for a latch type sense amplifier is proposed in this paper. The proposed scheme is based on the recalibration of the charging/discharging current of the critical nodes which are affected by the device mismatches. The circuit has been designed in a 65 nm CMOS technology with 1.2 V core transistors. The auto-calibration procedure is fully digital. Simulation results are given verifying the operation for sampling a 5 Gb/s signal dissipating only 360 uW

Circuits for Analog Signal Processing Employing Unconventional Active Elements

Disertační práce se zabývá zaváděním nových struktur moderních aktivních prvků pracujících v napěťovém, proudovém a smíšeném režimu. Funkčnost a chování těchto prvků byly ověřeny prostřednictvím SPICE simulací. V této práci je zahrnuta řada simulací, které dokazují přesnost a dobré vlastnosti těchto prvků, přičemž velký důraz byl kladen na to, aby tyto prvky byly schopny pracovat při nízkém napájecím napětí, jelikož poptávka po přenosných elektronických zařízeních a implantabilních zdravotnických přístrojích stále roste. Tyto přístroje jsou napájeny bateriemi a k tomu, aby byla prodloužena jejich životnost, trend navrhování analogových obvodů směřuje k stále většímu snižování spotřeby a napájecího napětí. Hlavním přínosem této práce je návrh nových CMOS struktur: CCII (Current Conveyor Second Generation) na základě BD (Bulk Driven), FG (Floating Gate) a QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) na základě FG, transkonduktor na základě nové techniky BD_QFG (Bulk Driven_Quasi Floating Gate), CCCDBA (Current Controlled Current Differencing Buffered Amplifier) na základě GD (Gate Driven), VDBA (Voltage Differencing Buffered Amplifier) na základě GD a DBeTA (Differential_Input Buffered and External Transconductance Amplifier) na základě BD. Dále je uvedeno několik zajímavých aplikací užívajících výše jmenované prvky. Získané výsledky simulací odpovídají teoretickým předpokladům.The dissertation thesis deals with implementing new structures of modern active elements working in voltage_, current_, and mixed mode. The functionality and behavior of these elements have been verified by SPICE simulation. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of those elements. However, a big attention to implement active elements by utilizing LV LP (Low Voltage Low Power) techniques is given in this thesis. This attention came from the fact that growing demand of portable electronic equipments and implantable medical devices are pushing the development towards LV LP integrated circuits because of their influence on batteries lifetime. More specifically, the main contribution of this thesis is to implement new CMOS structures of: CCII (Current Conveyor Second Generation) based on BD (Bulk Driven), FG (Floating Gate) and QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) based on FG; Transconductor based on new technique of BD_QFG (Bulk Driven_Quasi Floating Gate); CCCDBA (Current Controlled Current Differencing Buffered Amplifier) based on conventional GD (Gate Driven); VDBA (Voltage Differencing Buffered Amplifier) based on GD. Moreover, defining new active element i.e. DBeTA (Differential_Input Buffered and External Transconductance Amplifier) based on BD is also one of the main contributions of this thesis. To confirm the workability and attractive properties of the proposed circuits many applications were exhibited. The given results agree well with the theoretical anticipation.

Low-voltage Low-power Bulk-driven CMOS Op-Amp Using Negative Miller Compensation for ECG

Two bulk-driven CMOS (Complementary Metal Oxide Semiconductor) operational amplifier (op-amp) designs for electrocardiogram (ECG) application are presented and compared in this paper. Both op-amps are based on two-stage amplification, where bulk-driven differential input is the first stage, while additional DC gain is the second stage. Different compensation techniques were integrated in each op-amp design. Standard Miller compensation was used for the first op-amp parallel with the second stage. The novelty of the second op-amp is that it utilizes negative Miller compensation between the bulk-driven input node and the output node of the first stag, while standard Miller compensation was used in the second stage. The purpose of this work was to compare DC gain, phase margin (PM) and unit gain frequency (UGF) obtained through different simulated compensation strategies and test results. The op-amps were simulated using 0.25 μm CMOS technology. The simulation results are presented using the standard model libraries from Tanner EDA tools, operating on a single rail +0.8V power supply

Low-voltage Low-power Bulk-driven CMOS Op-Amp Using Negative Miller Compensation for ECG

Two bulk-driven CMOS (Complementary Metal Oxide Semiconductor) operational amplifier (op-amp) designs for electrocardiogram (ECG) application are presented and compared in this paper. Both op-amps are based on two-stage amplification, where bulk-driven differential input is the first stage, while additional DC gain is the second stage. Different compensation techniques were integrated in each op-amp design. Standard Miller compensation was used for the first op-amp parallel with the second stage. The novelty of the second op-amp is that it utilizes negative Miller compensation between the bulk-driven input node and the output node of the first stag, while standard Miller compensation was used in the second stage. The purpose of this work was to compare DC gain, phase margin (PM) and unit gain frequency (UGF) obtained through different simulated compensation strategies and test results. The op-amps were simulated using 0.25 μm CMOS technology. The simulation results are presented using the standard model libraries from Tanner EDA tools, operating on a single rail +0.8V power supply

Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies

The International Technology Roadmap for Semiconductors predicts that the nominal power supply voltage, VDD, will fall to 0.7 V by the end of the bulk CMOS era. At that time, it is expected that the long-channel threshold voltage of a MOSFET, VT0, will rise to 35.5% of VDD in order to maintain acceptable off-state leakage characteristics in digital systems. Given the recent push for system-on-a-chip integration, this increasing trend in VT0/VDD poses a serious threat to the future of analog design because it causes traditional analog circuit topologies to experience progressively problematic signal swing limitations in each new process generation. To combat the process-scaling-induced signal swing limitations of analog circuitry, researchers have proposed the use of bulk-driven MOSFETs. By using the bulk terminal as an input rather than the gate, the bulk-driven MOSFET makes it possible to extend the applicability of any analog cell to extremely low power supply voltages because VT0 does not appear in the device\u27s input signal path. Since the viability of the bulk-driven technique was first investigated in a 2 um p-well process, there have been numerous reports of low-voltage analog designs incorporating bulk-driven MOSFETs in the literature - most of which appear in technologies with feature sizes larger than 0.18 um. However, as of yet, no effort has been undertaken to understand how sub-micron process scaling trends have influenced the performance of a bulk-driven MOSFET, let alone make the device more adaptable to the deca-nanometer technologies widely used in the analog realm today. Thus, to further the field\u27s understanding of the bulk-driven MOSFET, this dissertation aims to examine the implications of scaling the device into a standard 90 nm bulk CMOS process. This dissertation also describes how the major disadvantages of a bulk-driven MOSFET - i.e., its reduced intrinsic gain, its limited frequency response and its large layout area requirement - can be mitigated through modifications to the device\u27s vertical doping profile and well structure. To gauge the potency of the proposed process changes, an optimized n-type bulk-driven MOSFET has been designed in a standard 90 nm bulk CMOS process via the 2-D device simulator, ATLAS

Digitally-Enhanced Software-Defined Radio Receiver Robust to Out-of-Band Interference

A software-defined radio (SDR) receiver with improved robustness to out-of-band interference (OBI) is presented. Two main challenges are identified for an OBI-robust SDR receiver: out-of-band nonlinearity and harmonic mixing. Voltage gain at RF is avoided, and instead realized at baseband in combination with low-pass filtering to mitigate blockers and improve out-of-band IIP3. Two alternative “iterative” harmonic-rejection (HR) techniques are presented to achieve high HR robust to mismatch: a) an analog two-stage polyphase HR concept, which enhances the HR to more than 60 dB; b) a digital adaptive interference cancelling (AIC) technique, which can suppress one dominating harmonic by at least 80 dB. An accurate multiphase clock generator is presented for a mismatch-robust HR. A proof-of-concept receiver is implemented in 65 nm CMOS. Measurements show 34 dB gain, 4 dB NF, and 3.5 dBm in-band IIP3 while the out-of-band IIP3 is + 16 dBm without fine tuning. The measured RF bandwidth is up to 6 GHz and the 8-phase LO works up to 0.9 GHz (master clock up to 7.2 GHz). At 0.8 GHz LO, the analog two-stage polyphase HR achieves a second to sixth order HR > dB over 40 chips, while the digital AIC technique achieves HR > 80 dB for the dominating harmonic. The total power consumption is 50 mA from a 1.2 V supply