An Initial study on The Reliability of Power Semiconductor Devices

An initial literature study combined with some basic comparative simulations has been performed on different electricfield modulation techniques and the subsequent reliability issues are reported for power semiconductor devices. An explanation of the most important power device metrics such as the offstate breakdown (BV) and specific on-resistance (RON) will be given, followed by a short overview of some of the electrostatic techniques (fieldplates, RESURF e.g. [1]) used to suppress peak electric fields. Furthermore it will be addressed that the high current operation of these devices results in shifting electric field peaks (Kirk effect [2], [3]) and as such different avalanche behavior, resulting in (gate oxide) reliability issues unlike those of conventional CMOS

微細CMOSデバイスの信頼性モデリングの研究

修士論

微細CMOSデバイスの信頼性モデリングの研究

修士論

IGBTデバイスモデルおよび信頼性モデリングの研究

修士論

Lateral Power Mosfets Hardened Against Single Event Radiation Effects

The underlying physical mechanisms of destructive single event effects (SEE) from heavy ion radiation have been widely studied in traditional vertical double-diffused power MOSFETs (VDMOS). Recently lateral double-diffused power MOSFETs (LDMOS), which inherently provide lower gate charge than VDMOS, have become an attractive option for MHz-frequency DC-DC converters in terrestrial power electronics applications [1]. There are growing interests in extending the LDMOS concept into radiation-hard space applications. Since the LDMOS has a device structure considerably different from VDMOS, the well studied single event burn-out (SEB) or single event gate rapture (SEGR) response of VDMOS cannot be simply assumed for LDMOS devices without further investigation. A few recent studies have begun to investigate ionizing radiation effects in LDMOS devices, however, these studies were mainly focused on displacement damage and total ionizing dose (TID) effects, with very limited data reported on the heavy ion SEE response of these devices [2]-[5]. Furthermore, the breakdown voltage of the LDMOS devices in these studies was limited to less than 80 volts (mostly in the range of 20-30 volts), considerably below the voltage requirement for some space power applications. In this work, we numerically and experimentally investigate the physical insights of SEE in two different fabricated LDMOS devices designed by the author and intended for use in radiation hard applications. The first device is a 24 V Resurf LDMOS fabricated on P-type epitaxial silicon on a P+ silicon substrate. The second device is a iv much different 150 V SOI Resurf LDMOS fabricated on a 1.0 micron thick N-type silicon-on-insulator substrate with a 1.0 micron thick buried silicon dioxide layer on an N-type silicon handle wafer. Each device contains internal features, layout techniques, and process methods designed to improve single event and total ionizing dose radiation hardness. Technology computer aided design (TCAD) software was used to develop the transistor design and fabrication process of each device and also to simulate the device response to heavy ion radiation. Using these simulations in conjunction with experimentally gathered heavy ion radiation test data, we explain and illustrate the fundamental physical mechanisms by which destructive single event effects occur in these LDMOS devices. We also explore the design tradeoffs for making an LDMOS device resistant to destructive single event effects, both in terms of electrical performance and impact on other radiation hardness metric

The 1st International Conference on Computational Engineering and Intelligent Systems

Computational engineering, artificial intelligence and smart systems constitute a hot multidisciplinary topic contrasting computer science, engineering and applied mathematics that created a variety of fascinating intelligent systems. Computational engineering encloses fundamental engineering and science blended with the advanced knowledge of mathematics, algorithms and computer languages. It is concerned with the modeling and simulation of complex systems and data processing methods. Computing and artificial intelligence lead to smart systems that are advanced machines designed to fulfill certain specifications. This proceedings book is a collection of papers presented at the first International Conference on Computational Engineering and Intelligent Systems (ICCEIS2021), held online in the period December 10-12, 2021. The collection offers a wide scope of engineering topics, including smart grids, intelligent control, artificial intelligence, optimization, microelectronics and telecommunication systems. The contributions included in this book are of high quality, present details concerning the topics in a succinct way, and can be used as excellent reference and support for readers regarding the field of computational engineering, artificial intelligence and smart system