INVESTIGATING THE EFFECTS OF SINGLE-EVENT UPSETS IN STATIC AND DYNAMIC REGISTERS

Radiation-induced single-event upsets (SEUs) pose a serious threat to the reliability of registers. The existing SEU analyses for static CMOS registers focus on the circuit-level impact and may underestimate the pertinent SEU information provided through node analysis. This thesis proposes SEU node analysis to evaluate the sensitivity of static registers and apply the obtained node information to improve the robustness of the register through selective node hardening (SNH) technique. Unlike previous hardening techniques such as the Triple Modular Redundancy (TMR) and the Dual Interlocked Cell (DICE) latch, the SNH method does not introduce larger area overhead. Moreover, this thesis also explores the impact of SEUs in dynamic flip-flops, which are appealing for the design of high-performance microprocessors. Previous work either uses the approaches for static flip-flops to evaluate SEU effects in dynamic flip-flops or overlook the SEU injected during the precharge phase. In this thesis, possible SEU sensitive nodes in dynamic flip-flops are re-examined and their window of vulnerability (WOV) is extended. Simulation results for SEU analysis in non-hardened dynamic flip-flops reveal that the last 55.3 % of the precharge time and a 100% evaluation time are affected by SEUs

STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS

Microelectronic devices and systems have been extensively utilized in a variety of radiation environments, ranging from the low-earth orbit to the ground level. A high-energy particle from such an environment may cause voltage/current transients, thereby inducing Single Event Effect (SEE) errors in an Integrated Circuit (IC). Ever since the first SEE error was reported in 1975, this community has made tremendous progress in investigating the mechanisms of SEE and exploring radiation tolerant techniques. However, as the IC technology advances, the existing hardening techniques have been rendered less effective because of the reduced spacing and charge sharing between devices. The Semiconductor Industry Association (SIA) roadmap has identified radiation-induced soft errors as the major threat to the reliable operation of electronic systems in the future. In digital systems, hardening techniques of their core components, such as latches, logic, and clock network, need to be addressed. Two single event tolerant latch designs taking advantage of feedback transistors are presented and evaluated in both single event resilience and overhead. These feedback transistors are turned OFF in the hold mode, thereby yielding a very large resistance. This, in turn, results in a larger feedback delay and higher single event tolerance. On the other hand, these extra transistors are turned ON when the cell is in the write mode. As a result, no significant write delay is introduced. Both designs demonstrate higher upset threshold and lower cross-section when compared to the reference cells. Dynamic logic circuits have intrinsic single event issues in each stage of the operations. The worst case occurs when the output is evaluated logic high, where the pull-up networks are turned OFF. In this case, the circuit fails to recover the output by pulling the output up to the supply rail. A capacitor added to the feedback path increases the node capacitance of the output and the feedback delay, thereby increasing the single event critical charge. Another differential structure that has two differential inputs and outputs eliminates single event upset issues at the expense of an increased number of transistors. Clock networks in advanced technology nodes may cause significant errors in an IC as the devices are more sensitive to single event strikes. Clock mesh is a widely used clocking scheme in a digital system. It was fabricated in a 28nm technology and evaluated through the use of heavy ions and laser irradiation experiments. Superior resistance to radiation strikes was demonstrated during these tests. In addition to mitigating single event issues by using hardened designs, built-in current sensors can be used to detect single event induced currents in the n-well and, if implemented, subsequently execute fault correction actions. These sensors were simulated and fabricated in a 28nm CMOS process. Simulation, as well as, experimental results, substantiates the validity of this sensor design. This manifests itself as an alternative to existing hardening techniques. In conclusion, this work investigates single event effects in digital systems, especially those in deep-submicron or advanced technology nodes. New hardened latch, dynamic logic, clock, and current sensor designs have been presented and evaluated. Through the use of these designs, the single event tolerance of a digital system can be achieved at the expense of varying overhead in terms of area, power, and delay

Characterization of Interconnection Delays in FPGAS Due to Single Event Upsets and Mitigation

RÉSUMÉ L’utilisation incessante de composants électroniques à géométrie toujours plus faible a engendré de nouveaux défis au fil des ans. Par exemple, des semi-conducteurs à mémoire et à microprocesseur plus avancés sont utilisés dans les systèmes avioniques qui présentent une susceptibilité importante aux phénomènes de rayonnement cosmique. L'une des principales implications des rayons cosmiques, observée principalement dans les satellites en orbite, est l'effet d'événements singuliers (SEE). Le rayonnement atmosphérique suscite plusieurs préoccupations concernant la sécurité et la fiabilité de l'équipement avionique, en particulier pour les systèmes qui impliquent des réseaux de portes programmables (FPGA). Les FPGA à base de cellules de mémoire statique (SRAM) présentent une solution attrayante pour mettre en oeuvre des systèmes complexes dans le domaine de l’avionique. Les expériences de rayonnement réalisées sur les FPGA ont dévoilé la vulnérabilité de ces dispositifs contre un type particulier de SEE, à savoir, les événements singuliers de changement d’état (SEU). Un SEU est considérée comme le changement de l'état d'un élément bistable (c'est-à-dire, un bit-flip) dû à l'effet d'un ion, d'un proton ou d’un neutron énergétique. Cet effet est non destructif et peut être corrigé en réécrivant la partie de la SRAM affectée. Les changements de délai (DC) potentiels dus aux SEU affectant la mémoire de configuration de routage ont été récemment confirmés. Un des objectifs de cette thèse consiste à caractériser plus précisément les DC dans les FPGA causés par les SEU. Les DC observés expérimentalement sont présentés et la modélisation au niveau circuit de ces DC est proposée. Les circuits impliqués dans la propagation du délai sont validés en effectuant une modélisation précise des blocs internes à l'intérieur du FPGA et en exécutant des simulations. Les résultats montrent l’origine des DC qui sont en accord avec les mesures expérimentales de délais. Les modèles proposés au niveau circuit sont, aux meilleures de notre connaissance, le premier travail qui confirme et explique les délais combinatoires dans les FPGA. La conception d'un circuit moniteur de délai pour la détection des DC a été faite dans la deuxième partie de cette thèse. Ce moniteur permet de détecter un changement de délai sur les sections critiques du circuit et de prévenir les pannes de synchronisation engendrées par les SEU sans utiliser la redondance modulaire triple (TMR).----------ABSTRACT The unrelenting demand for electronic components with ever diminishing feature size have emerged new challenges over the years. Among them, more advanced memory and microprocessor semiconductors are being used in avionic systems that exhibit a substantial susceptibility to cosmic radiation phenomena. One of the main implications of cosmic rays, which was primarily observed in orbiting satellites, is single-event effect (SEE). Atmospheric radiation causes several concerns regarding the safety and reliability of avionics equipment, particularly for systems that involve field programmable gate arrays (FPGA). SRAM-based FPGAs, as an attractive solution to implement systems in aeronautic sector, are very susceptible to SEEs in particular Single Event Upset (SEU). An SEU is considered as the change of the state of a bistable element (i.e., bit-flip) due to the effect of an energetic ion or proton. This effect is non-destructive and may be fixed by rewriting the affected part. Sensitivity evaluation of SRAM-based FPGAs to a physical impact such as potential delay changes (DC) has not been addressed thus far in the literature. DCs induced by SEU can affect the functionality of the logic circuits by disturbing the race condition on critical paths. The objective of this thesis is toward the characterization of DCs in SRAM-based FPGAs due to transient ionizing radiation. The DCs observed experimentally are presented and the circuit-level modeling of those DCs is proposed. Circuits involved in delay propagation are reverse-engineered by performing precise modeling of internal blocks inside the FPGA and executing simulations. The results show the root cause of DCs that are in good agreement with experimental delay measurements. The proposed circuit level models are, to the best of our knowledge, the first work on modeling of combinational delays in FPGAs.In addition, the design of a delay monitor circuit for DC detection is investigated in the second part of this thesis. This monitor allowed to show experimentally cumulative DCs on interconnects in FPGA. To this end, by avoiding the use of triple modular redundancy (TMR), a mitigation technique for DCs is proposed and the system downtime is minimized. A method is also proposed to decrease the clock frequency after DC detection without interrupting the process

Dynamic reconfiguration frameworks for high-performance reliable real-time reconfigurable computing

The sheer hardware-based computational performance and programming flexibility offered by reconfigurable hardware like Field-Programmable Gate Arrays (FPGAs) make them attractive for computing in applications that require high performance, availability, reliability, real-time processing, and high efficiency. Fueled by fabrication process scaling, modern reconfigurable devices come with ever greater quantities of on-chip resources, allowing a more complex variety of applications to be developed. Thus, the trend is that technology giants like Microsoft, Amazon, and Baidu now embrace reconfigurable computing devices likes FPGAs to meet their critical computing needs. In addition, the capability to autonomously reprogramme these devices in the field is being exploited for reliability in application domains like aerospace, defence, military, and nuclear power stations. In such applications, real-time computing is important and is often a necessity for reliability. As such, applications and algorithms resident on these devices must be implemented with sufficient considerations for real-time processing and reliability. Often, to manage a reconfigurable hardware device as a computing platform for a multiplicity of homogenous and heterogeneous tasks, reconfigurable operating systems (ROSes) have been proposed to give a software look to hardware-based computation. The key requirements of a ROS include partitioning, task scheduling and allocation, task configuration or loading, and inter-task communication and synchronization. Existing ROSes have met these requirements to varied extents. However, they are limited in reliability, especially regarding the flexibility of placing the hardware circuits of tasks on device’s chip area, the problem arising more from the partitioning approaches used. Indeed, this problem is deeply rooted in the static nature of the on-chip inter-communication among tasks, hampering the flexibility of runtime task relocation for reliability. This thesis proposes the enabling frameworks for reliable, available, real-time, efficient, secure, and high-performance reconfigurable computing by providing techniques and mechanisms for reliable runtime reconfiguration, and dynamic inter-circuit communication and synchronization for circuits on reconfigurable hardware. This work provides task configuration infrastructures for reliable reconfigurable computing. Key features, especially reliability-enabling functionalities, which have been given little or no attention in state-of-the-art are implemented. These features include internal register read and write for device diagnosis; configuration operation abort mechanism, and tightly integrated selective-area scanning, which aims to optimize access to the device’s reconfiguration port for both task loading and error mitigation. In addition, this thesis proposes a novel reliability-aware inter-task communication framework that exploits the availability of dedicated clocking infrastructures in a typical FPGA to provide inter-task communication and synchronization. The clock buffers and networks of an FPGA use dedicated routing resources, which are distinct from the general routing resources. As such, deploying these dedicated resources for communication sidesteps the restriction of static routes and allows a better relocation of circuits for reliability purposes. For evaluation, a case study that uses a NASA/JPL spectrometer data processing application is employed to demonstrate the improved reliability brought about by the implemented configuration controller and the reliability-aware dynamic communication infrastructure. It is observed that up to 74% time saving can be achieved for selective-area error mitigation when compared to state-of-the-art vendor implementations. Moreover, an improvement in overall system reliability is observed when the proposed dynamic communication scheme is deployed in the data processing application. Finally, one area of reconfigurable computing that has received insufficient attention is security. Meanwhile, considering the nature of applications which now turn to reconfigurable computing for accelerating compute-intensive processes, a high premium is now placed on security, not only of the device but also of the applications, from loading to runtime execution. To address security concerns, a novel secure and efficient task configuration technique for task relocation is also investigated, providing configuration time savings of up to 32% or 83%, depending on the device; and resource usage savings in excess of 90% compared to state-of-the-art

Phase Noise Analyses and Measurements in the Hybrid Memristor-CMOS Phase-Locked Loop Design and Devices Beyond Bulk CMOS

Phase-locked loop (PLLs) has been widely used in analog or mixed-signal integrated circuits. Since there is an increasing market for low noise and high speed devices, PLLs are being employed in communications. In this dissertation, we investigated phase noise, tuning range, jitter, and power performances in different architectures of PLL designs. More energy efficient devices such as memristor, graphene, transition metal di-chalcogenide (TMDC) materials and their respective transistors are introduced in the design phase-locked loop. Subsequently, we modeled phase noise of a CMOS phase-locked loop from the superposition of noises from its building blocks which comprises of a voltage-controlled oscillator, loop filter, frequency divider, phase-frequency detector, and the auxiliary input reference clock. Similarly, a linear time-invariant model that has additive noise sources in frequency domain is used to analyze the phase noise. The modeled phase noise results are further compared with the corresponding phase-locked loop designs in different n-well CMOS processes. With the scaling of CMOS technology and the increase of the electrical field, the problem of short channel effects (SCE) has become dominant, which causes decay in subthreshold slope (SS) and positive and negative shifts in the threshold voltages of nMOS and pMOS transistors, respectively. Various devices are proposed to continue extending Moore\u27s law and the roadmap in semiconductor industry. We employed tunnel field effect transistor owing to its better performance in terms of SS, leakage current, power consumption etc. Applying an appropriate bias voltage to the gate-source region of TFET causes the valence band to align with the conduction band and injecting the charge carriers. Similarly, under reverse bias, the two bands are misaligned and there is no injection of carriers. We implemented graphene TFET and MoS2 in PLL design and the results show improvements in phase noise, jitter, tuning range, and frequency of operation. In addition, the power consumption is greatly reduced due to the low supply voltage of tunnel field effect transistor

The 1991 3rd NASA Symposium on VLSI Design

Papers from the symposium are presented from the following sessions: (1) featured presentations 1; (2) very large scale integration (VLSI) circuit design; (3) VLSI architecture 1; (4) featured presentations 2; (5) neural networks; (6) VLSI architectures 2; (7) featured presentations 3; (8) verification 1; (9) analog design; (10) verification 2; (11) design innovations 1; (12) asynchronous design; and (13) design innovations 2

NASA Space Engineering Research Center Symposium on VLSI Design

The NASA Space Engineering Research Center (SERC) is proud to offer, at its second symposium on VLSI design, presentations by an outstanding set of individuals from national laboratories and the electronics industry. These featured speakers share insights into next generation advances that will serve as a basis for future VLSI design. Questions of reliability in the space environment along with new directions in CAD and design are addressed by the featured speakers

Time and statistical information utilization in high efficiency sub-micron CMOS successive approximation analog to digital converters

In an industrial and consumer electronic marketplace that is increasingly demanding greater real-world interactivity in portable and distributed devices, analog to digital converter efficiency and performance is being carefully examined. The successive approximation (SAR) analog to digital converter (ADC) architecture has become popular for its high efficiency at mid-speed and resolution requirements. This is due to the one core single bit quantizer, lack of residue amplification, and large digital domain processing allowing for easy process scaling. This work examines the traditional binary capacitive SAR ADC time and statistical information and proposes new structures that optimize ADC performance. The Ternary SAR (TSAR) uses the quantizer delay information to enhance accuracy, speed and power consumption of the overall SAR while providing multi-level redundancy. The early reset merged capacitor switching SAR (EMCS) identifies lost information in the SAR subtraction and optimizes a full binary quanitzer structure for a Ternary MCS DAC. Residue Shaping is demonstrated in SAR and pipeline configurations to allow for an extra bit of signal to noise quantization ratio (SQNR) due to multi-level redundancy. The feedback initialized ternary SAR (FITSAR) is proposed which splits a TSAR into separate binary and ternary sub-ADC structures for speed and power benefits with an inter-stage encoding that not only maintains residue shaping across the binary SAR, but allows for nearly optimally minimal energy consumption for capacitive ternary DACs. Finally, the ternary SAR ideas are applied to R2R DACs to reduce power consumption. These ideas are tested both in simulation and with prototype results

Radiation Damage in CMOS Image Sensors for Space Applications

The space radiation environment is damaging to silicon devices, such as Complementary Metal Oxide Semiconductor (CMOS) image sensors, affecting their performance over time or causing total failure. The first part of this work investigates a Charge Coupled Device (CCD) style CMOS image sensor designed for TDI (Time Delay and Integration) mode imaging, a mode commonly used for Earth observation. Damage from high energy protons in the space environment decreases the Charge Transfer Efficiency (CTE) and increases the dark current of such devices. Experimental work on proton damaged devices is presented, showing the effects on CTE and dark current. The results are compared to a standard CCD by a simulation to take into account the different dimensions and operating conditions of the two devices. The second part of this work describes an experimental campaign to determine the effects of process variations (namely the introduction of deep doping wells and the variation of epitaxial silicon thickness) on the rate of Single Event Latchup (SEL) in CMOS Active Pixel Sensor (APS) devices. SEL is a potentially destructive phenomenon which occurs in CMOS technology but not in CCDs. Test devices were subjected to heavy ion bombardement and SEL rates recorded for a range of heavy ions causing varying amounts of ionisation. A simulation using Technology Computer Aided Design (TCAD) was developed to predict the SEL rates due to heavy ions and to understand the characteristic shape of the SEL cross section vs. Linear Energy Transfer (LET) curves produced by SEL experiments. The simuation was carried out for structures representative of each of the design variants