A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2

Design of a Torque Current Generator for Strapdown Gyroscopes

The design, analysis, and experimental evaluation of an optimum performance torque current generator for use with strapdown gyroscopes, is presented. Among the criteria used to evaluate the design were the following: (1) steady-state accuracy; (2) margins of stability against self-oscillation; (3) temperature variations; (4) aging; (5) static errors drift errors, and transient errors, (6) classical frequency and time domain characteristics; and (7) the equivalent noise at the input of the comparater operational amplifier. The DC feedback loop of the torque current generator was approximated as a second-order system. Stability calculations for gain margins are discussed. Circuit diagrams are shown and block diagrams showing the implementation of the torque current generator are discussed

A Radiation hard bandgap reference circuit in a standard 0.13um CMOS Technology

With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an increased radiation tolerance of MOS transistors. Combined with special layout techniques, this yields circuits with a high inherent robustness against X-rays and other ionizing radiation. In bandgap voltage references, the dominant radiation-susceptibility is then no longer associated with the MOS transistors, but is dominated by the diodes. This paper gives an analysis of radiation effects in both MOSdevices and diodes and presents a solution to realize a radiation-hard voltage reference circuit in a standard CMOS technology. A demonstrator circuit was implemented in a standard 0.13 m CMOS technology. Measurements show correct operation with supply voltages in the range from 1.4 V down to 0.85 V, a reference voltage of 405 mV 7.5 mV ( = 6mVchip-to-chip statistical spread), and a reference voltage shift of only 1.5 mV (around 0.8%) under irradiation up to 44 Mrad (Si)

Bipolar-CMOS-DMOS Process-Based a Robust and High-Accuracy Low Drop-Out Regulator

A 40V BCD process high-accuracy and robust Low Drop-Out Regulator was proposed and tape-out in CSMC; the LDO was integrated in a LED Control and Driver SOC of outdoor applications. The proposed LDO converted the 12V~40V input power to 5V for the low voltage circuits inside the SOC. The robustness of LDO was important because the application condition of the SOC was bad. It was simulated in all process corner, -55℃~150℃ temperature and 12V~40V power voltage conditions. Simulation result shows that the LDO works robustly in conditions mentioned above. The default precision of LDO output voltage is ±2.75% max in all conditions, moreover, by utilizing a trim circuit in the feedback network, the precision can be improved to ±0.5% max after being trimmed by 3 bit digital trim signal Trim[3:1]. The total size of the proposed LDO is 135um*450um and the maximum current consumption is 284uA

Metrology Camera System of Prime Focus Spectrograph for Subaru Telescope

The Prime Focus Spectrograph (PFS) is a new optical/near-infrared multi-fiber spectrograph designed for the prime focus of the 8.2m Subaru telescope. The metrology camera system of PFS serves as the optical encoder of the COBRA fiber motors for the configuring of fibers. The 380mm diameter aperture metrology camera will locate at the Cassegrain focus of Subaru telescope to cover the whole focal plane with one 50M pixel Canon CMOS sensor. The metrology camera is designed to provide the fiber position information within 5{\mu}m error over the 45cm focal plane. The positions of all fibers can be obtained within 1s after the exposure is finished. This enables the overall fiber configuration to be less than 2 minutes.Comment: 10 pages, 12 figures, SPIE Astronomical Telescopes and Instrumentation 201

A Modular Programmable CMOS Analog Fuzzy Controller Chip

We present a highly modular fuzzy inference analog CMOS chip architecture with on-chip digital programmability. This chip consists of the interconnection of parameterized instances of two different kind of blocks, namely label blocks and rule blocks. The architecture realizes a lattice partition of the universe of discourse, which at the hardware level means that the fuzzy labels associated to every input (realized by the label blocks) are shared among the rule blocks. This reduces the area and power consumption and is the key point for chip modularity. The proposed architecture is demonstrated through a 16-rule two input CMOS 1-μm prototype which features an operation speed of 2.5 Mflips (2.5×10^6 fuzzy inferences per second) with 8.6 mW power consumption. Core area occupation of this prototype is of only 1.6 mm 2 including the digital control and memory circuitry used for programmability. Because of the architecture modularity the number of inputs and rules can be increased with any hardly design effort.This work was supported in part by the Spanish C.I.C.Y.T under Contract TIC96-1392-C02- 02 (SIVA)

A New Temperature Independent Current Controlled Oscillator

[[abstract]]This paper describes a circuit, which generates a low temperature-dependent bias currents. In this paper, low temperature coefficient reference is presented. The circuit is firstly employed to generate a current reference with temperature compensation, then, supply current to the current controlled ring oscillator (CCO). Because of the oscillation frequency of CCO is proportional to temperature, the current is designed to be inversely proportional to temperature to compensate the temperature variation of CCO. There are four different oscillation frequency with temperature compensation has been completed, they are 10MHz, 20MHz, 30MHz and 40MHz respectively. The proposed circuit has been design by a 0.18um CMOS technology process and using computer simulation to evaluate the thermal drift of the reference current. The temperature coefficient of the proposed CCO is 24 ppm/℃ in the temperature range between -25 and 75℃ at 10MHz. In the 20MHz, 30MHz and 40MHz oscillation frequency, the temperature coefficients are 32 ppm/℃, 38 ppm/℃ and 34 ppm/℃ respectively.[[conferencetype]]國際[[conferencedate]]20111207~20111209[[iscallforpapers]]Y[[conferencelocation]]Chiang Mai, Thailan

A sub-1 V, 26 μw, low-output-impedance CMOS bandgap reference with a low dropout or source follower mode

We present a low-power bandgap reference (BGR), functional from sub-1 V to 5 V supply voltage with either a low dropout (LDO) regulator or source follower (SF) output stage, denoted as the LDO or SF mode, in a 0.5-μm standard digital CMOS process with V tn≈ 0.6 V and |V tp| ≈ 0.7 V at 27 °C. Both modes operate at sub-1 V under zero load with a power consumption of around 26 μW. At 1 V (1.1 V) supply, the LDO (SF) mode provides an output current up to 1.1 mA (0.35 mA), a load regulation of ±8.5 mV/mA (±33 mV/mA) with approximately 10 μ s transient, a line regulation of ±4.2 mV/V (±50μV/V), and a temperature compensated reference voltage of 0.228 V (0.235 V) with a temperature coefficient around 34 ppm/° C from -20°C to 120 °C. At 1.5 V supply, the LDO (SF) mode can further drive up to 9.6 mA (3.2 mA) before the reference voltage falls to 90% of its nominal value. Such low-supply-voltage and high-current-driving BGR in standard digital CMOS processes is highly useful in portable and switching applications. © 2010 IEEE.published_or_final_versio