Ablation debris control by means of closed thick film filtered water immersion

The performance of laser ablation generated debris control by means of open immersion techniques have been shown to be limited by flow surface ripple effects on the beam and the action of ablation plume pressure loss by splashing of the immersion fluid. To eradicate these issues a closed technique has been developed which ensured a controlled geometry for both the optical interfaces of the flowing liquid film. This had the action of preventing splashing, ensuring repeatable machining conditions and allowed for control of liquid flow velocity. To investigate the performance benefits of this closed immersion technique bisphenol A polycarbonate samples have been machined using filtered water at a number of flow velocities. The results demonstrate the efficacy of the closed immersion technique: a 93% decrease in debris is produced when machining under closed filtered water immersion; the average debris particle size becomes larger, with an equal proportion of small and medium sized debris being produced when laser machining under closed flowing filtered water immersion; large debris is shown to be displaced further by a given flow velocity than smaller debris, showing that the action of flow turbulence in the duct has more impact on smaller debris. Low flow velocities were found to be less effective at controlling the positional trend of deposition of laser ablation generated debris than high flow velocities; but, use of excessive flow velocities resulted in turbulence motivated deposition. This work is of interest to the laser micromachining community and may aide in the manufacture of 2.5D laser etched patterns covering large area wafers and could be applied to a range of wavelengths and laser types

Master slave en-face OCT/SLO

Master Slave optical coherence tomography (MS-OCT) is an OCT method that does not require resampling of data and can be used to deliver en-face images from several depths simultaneously. As the MS-OCT method requires important computational resources, the number of multiple depth en-face images that can be produced in real-time is limited. Here, we demonstrate progress in taking advantage of the parallel processing feature of the MS-OCT technology. Harnessing the capabilities of graphics processing units (GPU)s, information from 384 depth positions is acquired in one raster with real time display of up to 40 en-face OCT images. These exhibit comparable resolution and sensitivity to the images produced using the conventional Fourier domain based method. The GPU facilitates versatile real time selection of parameters, such as the depth positions of the 40 images out of the set of 384 depth locations, as well as their axial resolution. In each updated displayed frame, in parallel with the 40 en-face OCT images, a scanning laser ophthalmoscopy (SLO) lookalike image is presented together with two B-scan OCT images oriented along rectangular directions. The thickness of the SLO lookalike image is dynamically determined by the choice of number of en-face OCT images displayed in the frame and the choice of differential axial distance between them

Free-Space Graphics with Electrically Driven Levitated Light Scatterers

Levitation of optical scatterers provides a new mean to develop free-space volumetric displays. The principle is to illuminate a levitating particle displaced at high velocity in three dimensions (3D) to create images based on persistence of vision (POV). Light scattered by the particle can be observed all around the volumetric display and therefore provides a true 3D image that does not rely on interference effects and remains insensitive to the angle of observation. The challenge is to control with a high accuracy and at high speed the trajectory of the particle in three dimensions. Systems that use light to generate free-space images either in plasma or with a bead are strictly dependent of the scanning method used. Mechanical systems are required to scan the particles in the volume which weakens the time dynamics. Here we use electrically driven planar Paul traps (PPTs) to control the trajectory of electrically charged particles. A single gold particle colloid is manipulated in three dimensions through AC and DC electrical voltages applied to a PPT. Electric voltages can be modulated at high frequencies (150 kHz) and allow for a high speed displacement of particles without moving any other system component. The optical scattering of the particle in levitation yields free-space images that are imaged with conventional optics. The trajectory of the particle is entirely encoded in the electric voltage and driven through stationary planar electrodes. We show in this paper, the proof-of-concept for the generation of 3D free space graphics with a single electrically scanned particle

Micro-manufacturing : research, technology outcomes and development issues

Besides continuing effort in developing MEMS-based manufacturing techniques, latest effort in Micro-manufacturing is also in Non-MEMS-based manufacturing. Research and technological development (RTD) in this field is encouraged by the increased demand on micro-components as well as promised development in the scaling down of the traditional macro-manufacturing processes for micro-length-scale manufacturing. This paper highlights some EU funded research activities in micro/nano-manufacturing, and gives examples of the latest development in micro-manufacturing methods/techniques, process chains, hybrid-processes, manufacturing equipment and supporting technologies/device, etc., which is followed by a summary of the achievements of the EU MASMICRO project. Finally, concluding remarks are given, which raise several issues concerning further development in micro-manufacturing

A possible scenario for volumetric display through nanoparticle suspensions

We discuss on the potential of suspensions of gold nanoparticles with variable refractive index for the possible physical realization of in-relief virtual dynamic display of plane images. A reasoning approach for a vision system to display in real-time volumetric moving images is proposed based on well-known properties of optical media, namely the anomalous dispersion of light on certain transparent media and the virtual image formed by a refracting transparent surface. The system relies on creating mechanisms to modify the refractive index of in-relief virtual dynamical display (iVDD) bulbs that ideally would contain a suspension of gold nanoparticles each and that might be ordered in an array filling up a whole screen.Comment: 15 pages. To appear Momento - Revista de Fisica (June 2001

Chemical studies of the passivation of GaAs surface recombination using sulfides and thiols

Steady-state photoluminescence, time-resolved photoluminescence, and x-ray photoelectron spectroscopy have been used to study the electrical and chemical properties of GaAs surfaces exposed to inorganic and organic sulfur donors. Despite a wide variation in S2–(aq) concentration, variation of the pH of aqueous HS–solutions had a small effect on the steady-state n-type GaAs photoluminescence intensity, with surfaces exposed to pH=8, 0.1-M HS–(aq) solutions displaying comparable luminescence intensity relative to those treated with pH=14, 1.0-M Na2S·9H2O(aq). Organic thiols (R-SH, where R=–CH2CH2SH or –C6H4Cl) dissolved in nonaqueous solvents were found to effect increases in steady-state luminescence yields and in time-resolved luminescence decay lifetimes of (100)-oriented GaAs. X-ray photoelectron spectroscopy showed that exposure of GaAs surfaces to these organic systems yielded thiols bound to the GaAs surface, but such exposure did not remove excess elemental As and did not form a detectable As2S3 overlayer on the GaAs. These results imply that complete removal of As0 or formation of monolayers of As2S3 is not necessary to effect a reduction in the recombination rate at etched GaAs surfaces. Other compounds that do not contain sulfur but that are strong Lewis bases, such as methoxide ion, also improved the GaAs steady-state photoluminescence intensity. These results demonstrate that a general class of electron-donating reagents can be used to reduce nonradiative recombination at GaAs surfaces, and also imply that prior models focusing on the formation of monolayer coverages of As2S3 and Ga2S3 are not adequate to describe the passivating behavior of this class of reagents. The time-resolved, high level injection experiments clearly demonstrate that a shift in the equilibrium surface Fermi-level energy is not sufficient to explain the luminescence intensity changes, and confirm that HS– and thiol-based reagents induce substantial reductions in the surface recombination velocity through a change in the GaAs surface state recombination rate