Four-injector variability modeling of FinFET predictive technology models

The usual way of modeling variability using threshold voltage shift and drain current amplification is becoming inaccurate as new sources of variability appear in sub-22nm devices. In this work we apply the four-injector approach for variability modeling to the simulation of SRAMs with predictive technology models from 20nm down to 7nm nodes. We show that the SRAMs, designed following ITRS roadmap, present stability metrics higher by at least 20% compared to a classical variability modeling approach. Speed estimation is also pessimistic, whereas leakage is underestimated if sub-threshold slope and DIBL mismatch and their correlations with threshold voltage are not considered

Review on suitable eDRAM configurations for next nano-metric electronics era

We summarize most of our studies focused on the main reliability issues that can threat the gain-cells eDRAM behavior when it is simulated at the nano-metric device range has been collected in this review. So, to outperform their memory cell counterparts, we explored different technological proposals and operational regimes where it can be located. The best memory cell performance is observed for the 3T1D-eDRAM cell when it is based on FinFET devices. Both device variability and SEU appear as key reliability issues for memory cells at sub-22nm technology node.Peer ReviewedPostprint (author's final draft

PAOD: a predictive approach for optimization of design in FinFET/SRAM

The evolutions in the modern memory units are comeup with FinFET/SRAM which can be utilized over high scaled computing units and in other devices. Some of the recent systems were surveyed through which it is known that existing systems lags with improving the performance and optimization of FinFET/SRAM design. Thus, the paper introduces an optimized model based on Search Optimization mechanism that uses Predictive Approach to optimize the design structure of FinFET/SRAM (PAOD). Using this can achieve significant fault tolerance under dynamic cumpting devices and applications. The model uses mathematical methodology which helps to attain less computational time and significant output even at more simulation iteration. This POAD is cost effective as it provides better convergence of FinFET/SRAM design than recursive design

Multi-Threshold Low Power-Delay Product Memory and Datapath Components Utilizing Advanced FinFET Technology Emphasizing the Reliability and Robustness

Indiana University-Purdue University Indianapolis (IUPUI)In this thesis, we investigated the 7 nm FinFET technology for its delay-power product performance. In our study, we explored the ASAP7 library from Arizona State University, developed in collaboration with ARM Holdings. The FinFET technology was chosen since it has a subthreshold slope of 60mV/decade that enables cells to function at 0.7V supply voltage at the nominal corner. An emphasis was focused on characterizing the Non-Ideal effects, delay variation, and power for the FinFET device. An exhaustive analysis of the INVx1 delay variation for different operating conditions was also included, to assess the robustness. The 7nm FinFET device was then employed into 6T SRAM cells and 16 function ALU. The SRAM cells were approached with advanced multi-corner stability evaluation. The system-level architecture of the ALU has demonstrated an ultra-low power system operating at 1 GHz clock frequency

AI/ML Algorithms and Applications in VLSI Design and Technology

An evident challenge ahead for the integrated circuit (IC) industry in the nanometer regime is the investigation and development of methods that can reduce the design complexity ensuing from growing process variations and curtail the turnaround time of chip manufacturing. Conventional methodologies employed for such tasks are largely manual; thus, time-consuming and resource-intensive. In contrast, the unique learning strategies of artificial intelligence (AI) provide numerous exciting automated approaches for handling complex and data-intensive tasks in very-large-scale integration (VLSI) design and testing. Employing AI and machine learning (ML) algorithms in VLSI design and manufacturing reduces the time and effort for understanding and processing the data within and across different abstraction levels via automated learning algorithms. It, in turn, improves the IC yield and reduces the manufacturing turnaround time. This paper thoroughly reviews the AI/ML automated approaches introduced in the past towards VLSI design and manufacturing. Moreover, we discuss the scope of AI/ML applications in the future at various abstraction levels to revolutionize the field of VLSI design, aiming for high-speed, highly intelligent, and efficient implementations

A Process Variation Tolerant Self-Compensation Sense Amplifier Design

As we move under the aegis of the Moore\u27s law, we have to deal with its darker side with problems like leakage and short channel effects. Once we go beyond 45nm regime process variations also have emerged as a significant design concern.Embedded memories uses sense amplifier for fast sensing and typically, sense amplifiers uses pair of matched transistors in a positive feedback environment. A small difference in voltage level of applied input signals to these matched transistors is amplified and the resulting logic signals are latched. Intra die variation causes mismatch between the sense transistors that should ideally be identical structures. Yield loss due to device and process variations has never been so critical to cause failure in circuits. Due to growth in size of embedded SRAMs as well as usage of sense amplifier based signaling techniques, process variations in sense amplifiers leads to significant loss of yield for that we need to come up with process variation tolerant circuit styles and new devices. In this work impact of transistor mismatch due to process variations on sense amplifier is evaluated and this problem is stated. For the solution of the problem a novel self compensation scheme on sense amplifiers is presented on different technology nodes up to 32nm on conventional bulk MOSFET technology. Our results show that the self compensation technique in the conventional bulk MOSFET latch type sense amplifier not just gives improvement in the yield but also leads to improvement in performance for latch type sense amplifiers. Lithography related CD variations, fluctuations in dopant density, oxide thickness and parametric variations of devices are identified as a major challenge to the classical bulk type MOSFET. With the emerging nanoscale devices, SIA roadmap identifies FinFETs as a candidate for post-planar end-of-roadmap CMOS device. With current technology scaling issues and with conventional bulk type MOSFET on 32nm node our technique can easily be applied to Double Gate devices. In this work, we also develop the model of Double Gate MOSFET through 3D Device Simulator Damocles and TCAD simulator. We propose a FinFET based process variation tolerant sense amplifier design that exploits the back gate of FinFET devices for dynamic compensation against process variations. Results from statistical simulation show that the proposed dynamic compensation is highly effective in restoring yield at a level comparable to that of sense amplifiers without process variations. We created the 32nm double gate models generated from Damocles 3-D device simulations [25] and Taurus Device Simulator available commercially from Synopsys [47] and use them in the nominal latch type sense amplifier design and on the Independent Gate Self Compensation Sense Amplifier Design (IGSSA) to compare the yield and performance benefits of sense amplifier design on FinFET technology over the conventional bulk type CMOS based sense amplifier on 32nm technology node effective in restoring yield at a level comparable to that of sense amplifiers without process variations. We created the 32nm double gate models generated from Damocles 3-D device simulations [25] and Taurus Device Simulator available commercially from Synopsys [47] and use them in the nominal latch type sense amplifier design and on the Independent Gate Self Compensation Sense Amplifier Design (IGSSA) to compare the yield and performance benefits of sense amplifier design on FinFET technology over the conventional bulk type CMOS based sense amplifier on 32nm technology node

Radiation Hardened by Design Methodologies for Soft-Error Mitigated Digital Architectures

abstract: Digital architectures for data encryption, processing, clock synthesis, data transfer, etc. are susceptible to radiation induced soft errors due to charge collection in complementary metal oxide semiconductor (CMOS) integrated circuits (ICs). Radiation hardening by design (RHBD) techniques such as double modular redundancy (DMR) and triple modular redundancy (TMR) are used for error detection and correction respectively in such architectures. Multiple node charge collection (MNCC) causes domain crossing errors (DCE) which can render the redundancy ineffectual. This dissertation describes techniques to ensure DCE mitigation with statistical confidence for various designs. Both sequential and combinatorial logic are separated using these custom and computer aided design (CAD) methodologies. Radiation vulnerability and design overhead are studied on VLSI sub-systems including an advanced encryption standard (AES) which is DCE mitigated using module level coarse separation on a 90-nm process with 99.999% DCE mitigation. A radiation hardened microprocessor (HERMES2) is implemented in both 90-nm and 55-nm technologies with an interleaved separation methodology with 99.99% DCE mitigation while achieving 4.9% increased cell density, 28.5 % reduced routing and 5.6% reduced power dissipation over the module fences implementation. A DMR register-file (RF) is implemented in 55 nm process and used in the HERMES2 microprocessor. The RF array custom design and the decoders APR designed are explored with a focus on design cycle time. Quality of results (QOR) is studied from power, performance, area and reliability (PPAR) perspective to ascertain the improvement over other design techniques. A radiation hardened all-digital multiplying pulsed digital delay line (DDL) is designed for double data rate (DDR2/3) applications for data eye centering during high speed off-chip data transfer. The effect of noise, radiation particle strikes and statistical variation on the designed DDL are studied in detail. The design achieves the best in class 22.4 ps peak-to-peak jitter, 100-850 MHz range at 14 pJ/cycle energy consumption. Vulnerability of the non-hardened design is characterized and portions of the redundant DDL are separated in custom and auto-place and route (APR). Thus, a range of designs for mission critical applications are implemented using methodologies proposed in this work and their potential PPAR benefits explored in detail.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Impacto da variabilidade PVT em somadores construídos com XORs

A operação de soma é a mais usada em Unidades Lógicas e Aritméticas (ULA). A ULA é a unidade mais importante no processamento de dados. Em sistemas digitais, é desejado um somador completo com baixo consumo de energia e um alto desempenho. O somador completo faz parte do caminho crítico em sistemas computacionais, ele pode ser implementado de diversas maneiras, a maioria delas tendo como seu principal sub-circuito a porta lógica OU-exclusivo (XOR). Consequentemente, o estudo de somadores completos compostos por combinações de portas lógicas XOR é de grande valia para pesquisas na literatura. Melhorias nos módulos aritméticos pode reduzir significativamente o consumo de potência dos sistemas, mas em tecnologias nanométricas é necessário considerar o impacto da variabilidade. Esse trabalho tem como objetivo analisar projetos de somadores completos que quando submetidos aos efeitos de variabilidade devem ser robustos, ter um bom desempenho e mostrar bons resultados em consumo de energia, quando estão operando em tensão nominal e em tensão de quase limiar. Além disso, foi utilizada uma técnica chamada de célula de desacoplamento (Dcell) visando uma alternativa para a redução da variabilidade de processo. Esse trabalho analisa e compara 4 somadores tradicionais e 9 somadores completos construídos através de 3 blocos lógicos, dos quais 2 deles são substituídos por portas lógicas XOR, em uma tecnologia FinFET de 7nm. Foi observado que circuitos somadores que foram construídos usando a XOR da família lógica CMOS, especialmente no segundo bloco, obtiveram piores resultados de desempenho e consumo energético. Somadores operando em tensão nominal são cerca de 80% mais robustos quanto ao impacto da variabilidade de processo no consumo máximo. A operação em quase limiar implica em uma alta sensibilidade no desempenho e consumo, alcançando mais de 300% nos piores casos. Em relação à variabilidade de processo, foi verificado um aumento de sensibilidade de cerca de 40% no desempenho quando foram utilizadas a XOR V5 e a XOR V8 no segundo bloco dos somadores quando operando em tensão nominal. Para a operação em tensão de quase limiar o uso da metodologia proposta nesse trabalho mostrou ser uma boa opção para alcançar uma maior robustez quanto ao consumo dos circuitos. Considerando o uso da Dcell, na operação em tensão nominal, foi verificado uma redução no desempenho juntamente com uma redução na variabilidade. O melhor caso foi o somador FAV5V8 que para um aumento de 20% no atraso, obteve uma redução de 20% na variabilidade. Em relação ao consumo, houve uma redução de 16% na potência dinâmica, juntamente com uma redução de quase 30% na variabilidade, como o que ocorreu com o somador FAV8V1. Foi possível observar casos de redução da variabilidade em mais de 40% com um pequeno aumento no consumo dinâmico. O uso dessa técnica teve um alto impacto nos resultados de circuitos que operavam em tensão de quase limiar, chegando em alguns casos a mais de 40% de redução do desempenho para uma pequena redução na variabilidade. Quanto ao consumo, nesse caso, os somadores tradicionais foram os menos afetados, e novamente o uso da XOR V8 no segundo bloco para construção dos somadores mostrou ser uma boa opção para aumento da robustez dos circuitos.The sum operation is the most used in the Arithmetic and Logic Units (ALU). In digital systems, a complete adder with low energy consumption and high performance is desired. The full adder is part of the critical path in computer systems. It can be implemented in several ways, most of them having the OR-exclusive logic gate (XOR) as its main sub-circuit. Consequently, the study of full adders composed of combinations of XOR logic gates has a great value in the literature. Improvements in arithmetic modules can significantly reduce the power consumption of systems, however, in nanometric technologies it is necessary to consider the impact of variability. This work aims to analyse designs of full adders considering variability effects, comparing performance and energy consumption when operating at nominal voltage and also at near threshold voltage. In addition, a technique called decoupling cell (Dcell) was used to provide an alternative for reducing process variability. This work analyses and compares four traditional adders and nine adders built using three logic blocks, where two of them are replaced by XOR logic gates, in a 7nm FinFET technology. It was observed that full adders that were built using the XOR of the CMOS logic family, especially in the second block, had worse results in performance and energy consumption. Full adders operating at nominal voltage regime are about 80% more robust in terms of the impact of process variability on maximum consumption. The near threshold operation implies a high sensitivity in performance and consumption, reaching more than 300% in the worst cases. Regarding the process variability, there was an increase in sensitivity of about 40% in performance when the XOR V5 and XOR V8 were used in the second block of the adder when operating at nominal voltage. For the voltage operation of near threshold, the use of the methodology proposed in this work demonstrate to be a good option to achieve greater robustness regarding the consumption of the circuits. Considering the use of Dcell, in the operation at nominal voltage, a reduction in performance was verified together with a reduction in variability. The best case was the adder FAV5V8 which for a 20% increase in delay, obtained a reduction of 20% in variability. In relation to dynamic consumption, there was a 16% reduction in power, together with a reduction of almost 30% in variability, as occurred with the FAV8V1 adder. It was possible to observe cases of reduced variability by more than 40% with a small increase in dynamic consumption. The use of this technique had a high impact on the results of circuits operating at near threshold voltage, in some cases reaching more than 40% reduction in performance for a small reduction in variability. For consumption, in this case, the traditional full adders were the least affected, and again the use of the XOR V8 in the second block for the construction of the adder proved to be a good option for increasing the robustness of the circuits