Voltage-to-Time Converter for High-Speed Time-Based Analog-to-Digital Converters

In modern complementary metal oxide semiconductor (CMOS) technologies, the supply voltage scales faster than the threshold voltage (Vth) of the transistors in successive smaller nodes. Moreover, the intrinsic gain of the transistors diminishes as well. Consequently, these issues increase the difficulty of designing higher speed and larger resolution analog-to-digital converters (ADCs) employing voltage-domain ADC architectures. Nevertheless, smaller transistor dimensions in state-of-the-art CMOS technologies leads to reduced capacitance, resulting in lower gate delays. Therefore, it becomes beneficial to first convert an input voltage to a 'time signal' using a voltage-to-time converter (VTC), instead of directly converting it into a digital output. This 'time-signal' could then be converted to a digital output through a time-to-digital converter (TDC) for complete analog-to-digital conversion. However, the overall performance of such an ADC will still be limited to the performance level of the voltage-to-time conversion process. Hence, this thesis presents the design of a linear VTC for a high-speed time-based ADC in 28 nm CMOS process. The proposed VTC consists of a sample-and-hold (S/H) circuit, a ramp generator and a comparator to perform the conversion of the input signal from the voltage to the time domain. Larger linearity is attained by integrating a constant current (with high output impedance) over a capacitor, generating a linear ramp. The VTC operates at 256 MSPS consuming 1.3 mW from 1 V supply with a full-scale 1 V pk-pk differential input signal, while achieving a time-domain output signal with a spurious-free-dynamic-range (SFDR) of 77 dB and a signal-to-noise-and-distortion ratio (SNDR) of 56 dB at close to Nyquist frequency (f = 126.5 MHz). The proposed VTC attains an output range of 2.7 ns, which is the highest linear output range for a VTC at this speed, published to date

Aika-digitaalimuunnin laajakaistaisiin aikapohjaisiin analogia-digitaalimuuntimiin

Modern deeply scaled semiconductor processes make the design of voltage-domain circuits increasingly challenging. On the contrary, the area and power consumption of digital circuits are improving with every new process node. Consequently, digital solutions are designed in place of their purely analog counterparts in applications such as analog-to-digital (A/D) conversion. Time-based analog-to-digital converters (ADC) employ digital-intensive architectures by processing analog quantities in time-domain. The quantization step of the time-based A/D-conversion is carried out by a time-to-digital converter (TDC). A free-running ring oscillator -based TDC design is presented for use in wideband time-based ADCs. The proposed architecture aims to maximize time resolution and full-scale range, and to achieve error resilient conversion performance with minimized power and area consumptions. The time resolution is maximized by employing a high-frequency multipath ring oscillator, and the full-scale range is extended using a high-speed gray counter. The error resilience is achieved by custom sense-amplifier -based sampling flip-flops, gray coded counter and a digital error correction algorithm for counter sampling error correction. The implemented design achieves up to 9-bit effective resolution at 250 MS/s with 4.3 milliwatt power consumption.Modernien puolijohdeteknologioiden skaalautumisen seurauksena jännitetason piirien suunnittelu tulee entistä haasteellisemmaksi. Toisaalta digitaalisten piirirakenteiden pinta-ala sekä tehonkulutus pienenevät prosessikehityksen myötä. Tästä syystä digitaalisia ratkaisuja suunnitellaan vastaavien puhtaasti analogisien rakenteiden tilalle. Analogia-digitaalimuunnos (A/D-muunnos) voidaan toteuttaa jännitetason sijaan aikatasossa käyttämällä aikapohjaisia A/D-muuntimia, jotka ovat rakenteeltaan pääosin digitaalisia. Kvantisointivaihe aikapohjaisessa A/D-muuntimessa toteutetaan aika-digitaalimuuntimella. Työ esittelee vapaasti oskilloivaan silmukkaoskillaattoriin perustuvan aika-digitaalimuuntimen, joka on suunniteltu käytettäväksi laajakaistaisessa aikapohjaisessa A/D-muuntimessa. Esitelty rakenne pyrkii maksimoimaan muuntimen aikaresoluution sekä muunnosalueen, sekä saavuttamaan virhesietoisen muunnostoiminnan minimoidulla tehon sekä pinta-alan kulutuksella. Aikaresoluutio on maksimoitu hyödyntämällä suuritaajuista monipolkuista silmukkaoskillaattoria, ja muunnosalue on maksimoitu nopealla Gray-koodi -laskuripiirillä. Muunnosprosessin virhesietoisuus on saavutettu toteuttamalla näytteistys herkillä kiikkuelementeillä, hyödyntämällä Gray-koodattua laskuria, sekä jälkiprosessoimalla laskurin näytteistetyt arvot virheenkorjausalgoritmilla. Esitelty muunnintoteutus saavuttaa 9 bitin efektiivisen resoluution 250 MS/s näytetaajuudella ja 4.3 milliwatin tehonkulutuksella

Time-Domain/Digital Frequency Synchronized Hysteresis Based Fully Integrated Voltage Regulator

abstract: Power management integrated circuit (PMIC) design is a key module in almost all electronics around us such as Phones, Tablets, Computers, Laptop, Electric vehicles, etc. The on-chip loads such as microprocessors cores, memories, Analog/RF, etc. requires multiple supply voltage domains. Providing these supply voltages from off-chip voltage regulators will increase the overall system cost and limits the performance due to the board and package parasitics. Therefore, an on-chip fully integrated voltage regulator (FIVR) is required. The dissertation presents a topology for a fully integrated power stage in a DC-DC buck converter achieving a high-power density and a time-domain hysteresis based highly integrated buck converter. A multi-phase time-domain comparator is proposed in this work for implementing the hysteresis control, thereby achieving a process scaling friendly highly digital design. A higher-order LC notch filter along with a flying capacitor which couples the input and output voltage ripple is implemented. The power stage operates at 500 MHz and can deliver a maximum power of 1.0 W and load current of 1.67 A, while occupying 1.21 mm2 active die area. Thus achieving a power density of 0.867 W/mm2 and current density of 1.377 A/mm2. The peak efficiency obtained is 71% at 780 mA of load current. The power stage with the additional off-chip LC is utilized to design a highly integrated current mode hysteretic buck converter operating at 180 MHz. It achieves 20 ns of settling and 2-5 ns of rise/fall time for reference tracking. The second part of the dissertation discusses an integrated low voltage switched-capacitor based power sensor, to measure the output power of a DC-DC boost converter. This approach results in a lower complexity, area, power consumption, and a lower component count for the overall PV MPPT system. Designed in a 180 nm CMOS process, the circuit can operate with a supply voltage of 1.8 V. It achieves a power sense accuracy of 7.6%, occupies a die area of 0.0519 mm2, and consumes 0.748 mW of power.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Implementing a highly-linear Voltage-to-time converter circuit for a low power 10-bit 200kS/s SAR ADC with Adaptive Conversion cycle for high-quality audio applications in 0.18um TSMC CMOS process technology

This document presents a 0.18 um CMOS process highly-linear Voltage-to-Time Converter (VTC) design that can operate at a low voltage of 1.8 V across PVT corners and with the power consumption of less than 13 uW and linearity error less than 1%. The VTC was designed to work at a minimum of 1.68 V and accepts a maximum clock frequency of 900 MHz; to reduce non-linear behavior a symmetric load and current starved inverter configuration was proposed. This circuit was designed using TSMC 0.18 um CMOS process technology.ITESO, A. C

A 0.18um CMOS linear Voltage-to-Time Converter for a Low Power 10-bit 200kS/s SAR ADC with Adaptive Conversion Cycle Oriented to Audio Applications

This document presents a 0.18 um CMOS process highly-linear Voltage-to-Time Converter (VTC) design that can operate at a low voltage of 1.8 V across PVT corners and with the power consumption of less than 13 uW and linearity error less than 1%. The VTC was designed to work at a minimum of 1.68 V and accepts a maximum clock frequency of 900 MHz; to reduce non-linear behavior a symmetric load and current starved inverter configuration was proposed. This circuit was designed using TSMC 0.18 um CMOS process technology.ITESO, A. C

Implementing a highly-linear Voltage-to-time converter circuit for a low power 10-bit 200kS/s SAR ADC with Adaptive Conversion cycle for high-quality audio applications in 0.18um TSMC CMOS process technology

This document presents a 0.18 um CMOS process highly-linear Voltage-to-Time Converter (VTC) design that can operate at a low voltage of 1.8 V across PVT corners and with the power consumption of less than 13 uW and linearity error less than 1%. The VTC was designed to work at a minimum of 1.68 V and accepts a maximum clock frequency of 900 MHz; to reduce non-linear behavior a symmetric load and current starved inverter configuration was proposed. This circuit was designed using TSMC 0.18 um CMOS process technology.ITESO, A. C

Next generation analog-to-digital conversion using time-based encoding and digital synthesis techniques

The internet-of-things is a growing market segment which is based on an arrayof portable communication devices with high power efficiency. Advanced semiconductortechnology can easily improve their digital performance, but the samecannot be said for the analog blocks which are vital to their operation. Highperformance analog circuits continue to use conventional design techniques andarchitectures at the expense of power efficiency. Deeply scaled CMOS exaggeratesthis trade-off, opening the door for novel system techniques that take advantage ofthe digital nature of sub-micron transistors. This research focuses on two highlydigital ADCs which can mitigate the short channel effects of limited output swingand low intrinsic gain while also benefiting from process scaling.First, a multi-domain ADC is used to perform quantization on both voltageand time domain signals, relaxing the power-performance trade-off. This hybridapproach can lead to a high resolution, high efficiency data converter in scaledprocess. A prototype ADC was fabricated in 180nm CMOS, showing an SNDRof 73 dB, operating at 20 MHz sampling frequency, with a power consumption of1.28 mW.Next, an automated synthesis process is used to automatically generate a highspeed VCO-based quantizer from verilog code. Stochastic spatial averaging iscombined with a high speed open-loop noise-shaping quantizer to provide enhancedresolution in the presence of device mismatch. Simulation results of a prototypeADC in 180nm CMOS shows an SNDR of 49 dB, operating at 800 MHz samplingfrequency and 50 MHz signal bandwidth.Keywords: data converter, synthesis, verilog, ADC, SAR, TD

Analog-to-digital converter circuit and system design to improve with CMOS scaling

textThere is a need to rethink the design of analog/mixed-signal circuits to be viable in state-of-the-art nanometer-scale CMOS processes due to the hostile environment they create for analog circuits. Reduced supply voltages and smaller capacitances are beneficial to circuit speed and digital circuit power efficiency; however, these changes along with smaller dimensions and close coupling of fast-switching digital circuits have made high-accuracy voltage domain analog processing increasingly difficult. In this work, techniques to improve analog-to-digital converters (ADC) for nanometer-scale processes are explored. First, I propose a mostly-digital time-based oversampling delta-sigma (∆Σ) ADC architecture. This system uses time, rather than voltage, as the analog variable for its quantizer, where the noise shaping process is realized by modulating the width of a variable-width digital "pulse." The merits of this architecture render it not only viable to scaling, but also enable improved circuit performance with ever-increasing time resolution of scaled CMOS processes. This is in contrast to traditional voltage-based analog circuit design, whose performance generally decreases with scaling due to increasingly higher voltage uncertainty due to supply voltage reduction and short-channel effects. In conjunction with Dr. Woo Young Jung while he was a Ph.D. student at The University of Texas at Austin, two prototype implementations of the proposed architecture were designed and fabricated in TSMC 180 nm CMOS and IBM 45 nm Silicon-On-Insulator (SOI) processes. The prototype ADCs demonstrate that the architecture can achieve bandwidths of 5-20 MHz and ∼50 dB SNR with very small area. The first generation ADC core occupies an area of only 0.0275 mm² , while the second generation ADC core occupies 0.0192 mm² . The two prototypes can be categorized as some of the smallestarea modulators in the literature. Second, I analyze the measured results of the prototype ADC chips, and determine the source for the harmonic distortion. I then demonstrate a digital calibration algorithm that sufficiently mitigates the distortion. This calibration approach falls in the general philosophy of digitally-assisted analog systems. In this philosophy, digital calibration and post-correction are favored over traditional analog solutions, in which there is a high cost to the analog solution either in complexity, power, or area.Electrical and Computer Engineerin

High-speed Low-voltage CMOS Flash Analog-to-Digital Converter for Wideband Communication System-on-a-Chip

With higher-level integration driven by increasingly complex digital systems and downscaling CMOS processes available, system-on-a-chip (SoC) is an emerging technology of low power, high cost effectiveness and high reliability and is exceedingly attractive for applications in high-speed data conversion wireless and wideband communication systems. This research presents a novel ADC comparator design methodology; the speed and performance of which is not restricted by the supply voltage reduction and device linearity deterioration in scaling-down CMOS processes. By developing a dynamic offset suppression technique and a circuit optimization method, the comparator can achieve a 3 dB frequency of 2 GHz in 130 nanometer (nm) CMOS process. Combining this new comparator design and a proposed pipelined thermometer-Gray- binary encoder designed by the DCVSPG logic, a high-speed, low-voltage clocked-digital- comparator (CDC) pipelined CMOS flash ADC architecture is proposed for wideband communication SoC. This architecture has advantages of small silicon area, low power, and low cost. Three CDC-based pipelined CMOS flash ADCs were implemented in 130 nm CMOS process and their experimental results are reported: 1. 4-b, 2.5-GSPS ADC: SFDR of 21.48-dB, SNDR of 15.99-dB, ENOB of 2.4-b, ERBW of 1-GHz, power of 7.9-mW, and area of 0.022-mm2. 2. 4-b, 4-GSPS ADC: SFDR of 25-dB, SNDR of 18.6-dB, ENOB of 2.8-b, ERBW of 2-GHz, power of 11-mW. 3. 6-b, 4-GSPS ADC: SFDR of 48-dB at a signal frequency of 11.72-MHz, SNDR of 34.43-dB, ENOB of 5.4-b, power of 28-mW. An application of the proposed CDC-based pipelined CMOS flash ADC is 1-GHz bandwidth, 2.5-GSPS digital receiver on a chip. To verify the performance of the receiver, a mixed-signal block-level simulation and verification flow was built in Cadence AMS integrated platform. The verification results of the digital receiver using a 4-b 2.5-GSPS CDC-based pipelined CMOS ADC, a 256-point, 12-point kernel function FFT and a frequency detection logic show that two tone signals up to 1125 MHz can be detected and discriminated. A notable contribution of this research is that the proposed ADC architecture and the comparator design with dynamic offset suppression and optimization are extremely suitable for future VDSM CMOS processes and make all-digital receiver SoC design practical

Study of a Time Assisted SAR ADC

The demand for low power systems has been increasing in recent years and Analogto- Digital Converters (ADCs) are key blocks of many of these systems as they convert a physical quantity into the digital domain so that this information can be further processed or stored using digital techniques. Data Converters based on Charge Redistribution using of Successive Approximation Registers (SAR) are becoming one of the most popular ADC architectures for moderate speed, medium resolution and low power applications. Due to their low analog complexity SAR ADCs benefit from technology scaling. However, this scaling often comes with a supply voltage reduction and the noise levels do not decrease at the same rate, which translates into a performance decrease. Therefore, new opportunities emerge to explore other physical quantities such as time, frequency, phase or charge in the circuit. This thesis focuses on studying how the time domain information can be used to increase the performance of SAR ADCs. To do so, a new SAR ADC architecture is proposed in which a Time-to-Digital Converter (TDC) is used to convert the time domain information, provided by the comparator, into the digital domain. This new architecture was modelled in MATLAB as a 12 bit TDC assisted SAR ADC, using information from electrical simulations of the comparator and the TDC, designed in Cadence in 65 nm ST Microelectronics CMOS technology. Simulation results demonstrated that, to achieve a better performance when compared to more traditional SAR structures, the TDC energy and latency should be minimized. Another limiting factor was the large voltage range in which only 1 bit could be extracted from the time-to-voltage conversion by the TDC due to the comparator’s fast response in this range. The proposed architecture was also extended to incorporate a Bypass Window in the time domain, which allowed to substantially decrease the number of clock cycles necessary to solve the 12 bits of the ADC