In modern complementary metal oxide semiconductor (CMOS) technologies, the supply voltage scales faster than the threshold voltage (Vth) of the transistors in successive smaller nodes. Moreover, the intrinsic gain of the transistors diminishes as well. Consequently, these issues increase the difficulty of designing higher speed and larger resolution analog-to-digital converters (ADCs) employing voltage-domain ADC architectures. Nevertheless, smaller transistor dimensions in state-of-the-art CMOS technologies leads to reduced capacitance, resulting in lower gate delays. Therefore, it becomes beneficial to first convert an input voltage to a 'time signal' using a voltage-to-time converter (VTC), instead of directly converting it into a digital output. This 'time-signal' could then be converted to a digital output through a time-to-digital converter (TDC) for complete analog-to-digital conversion. However, the overall performance of such an ADC will still be limited to the performance level of the voltage-to-time conversion process.
Hence, this thesis presents the design of a linear VTC for a high-speed time-based ADC in 28 nm CMOS process. The proposed VTC consists of a sample-and-hold (S/H) circuit, a ramp generator and a comparator to perform the conversion of the input signal from the voltage to the time domain. Larger linearity is attained by integrating a constant current (with high output impedance) over a capacitor, generating a linear ramp. The VTC operates at 256 MSPS consuming 1.3 mW from 1 V supply with a full-scale 1 V pk-pk differential input signal, while achieving a time-domain output signal with a spurious-free-dynamic-range (SFDR) of 77 dB and a signal-to-noise-and-distortion ratio (SNDR) of 56 dB at close to Nyquist frequency (f = 126.5 MHz). The proposed VTC attains an output range of 2.7 ns, which is the highest linear output range for a VTC at this speed, published to date
