Gallium-Nitride Efficacy for High-Reliability Forward Converters in Spacecraft

Gallium Nitride (GaN) devices show particular promise for space-rated power conversion applications that rely on MOSFET technology whose performance is severely limited by the radiation hardening processes. Though GaN failure mode classification and radiation hardened device variety is limited, the current space-rated selection pool can still yield significant efficiency and power density improvements. However, the context of GaN research is often future oriented such that the application of GaN to common, proven, space-rated converter designs is rare. The presented work quantifies the performance benefits of market available, space-rated GaN HEMTs over radiation hardened MOSFETs for a synchronous forward converter, which remains an extremely popular topology for isolated, medium power, DC-DC conversion on NASA satellite systems. Two 75-Watt, space-rated forward converters were designed, implemented, and benchmarked, with the power switch technology being the single variable of change. By forming pareto-optimal fronts of the key device metrics, optimal Rad-hard MOSFETs were chosen so that the baseline converter performance was considered best-case. The frequency limitations of common, available, Rad-hard PWM controllers limited power density in the GaN and Si converter alike, however, efficiency gains proved sizeable. The GaN based converter saw a peak efficiency of 86%, which was a 4.54% improvement over the Si baseline. Detailed efficiency and loss differential plots are presented which show the GaN converter’s reduced sensitivity to input voltage. Extreme similarity between the waveforms and functional characteristics of the two converters verified the design of the experiment. Furthermore, the performance of the baseline Si converter proved very similar to that of a large sampling of space-rated forward converters, making the experimental results have a high degree of utility for manufacturers

Design, Analysis and Comparison of Si- and GaN-Based DC-DC Wide-Input-Voltage-Range Buck-Boost Converters

The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range. The research also explains how the implementation of GaN E‑HEMT transistors influences the overall efficiency of the converter. The article presents a process of selection of the most efficient topology for stabilization of the battery storage voltage (9 V – 36 V) at the level of 24 V, which enables the usage of ultracapacitor energy storage in a wide range of applications, e.g., in automated electric vehicles. In order to choose the most suitable topology, simulation and laboratory research were conducted. The two most promising topologies were selected for verification in the experimental model. Each of the converters was constructed in two versions: with Si and with GaN E-HEMT transistors. The paper presents experimental research results that consist of precise power loss measurements and thermal analysis. The performance with an increased switching frequency of converters was also examined

Efficiency comparison of power converters based on SiC and GaN semiconductors at high switching frequencies

© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Hard-switching voltage source converters (VSC) based on wide-bandgap (WBG) devices surpass their silicon equivalents in every aspect. Nevertheless, at high switching frequencies, the efficiency significantly differs depending on the WBG semiconductor used. This article presents an extensive comparison between gallium nitride (GaN), and silicon carbide (SiC) devices in terms of efficiency. The impact of the switching frequency is evaluated for each semiconductor using two modulation techniques: the classical space vector pulse width modulation (SVPWM) technique, and the innovative hexagonal sigma-delta modulation (H-S¿). The performance and losses of both WBG technologies are analysed here using Matlab/Simulink and PLECS. Experimental results performed on two VSC converters, one based on SiC devices and the other made using GaN transistors, show the influence of the semiconductor technology and the modulation strategy on the efficiency at high switching frequenciesPeer ReviewedPostprint (published version

Development of an active power filter based on wide-bandgap semiconductors

Pla de Doctorat Industrial, Generalitat de CatalynuaElectrical and electronic equipment needs sinusoidal currents and voltages to function properly. Equipment such as computers, household appliances, electric vehicle chargers, and LED lights can distort the grid and worsen grid quality. Distorted electrical grids can cause malfunctions, reduce service life, and decrease the performance of connected equipment. Industry commonly solves these problems using active power filters, which can minimise the harmonics of the grid, eliminate undesirable reactive power, and restore balance to unbalanced power grids. This thesis deals with the design and implementation of an active power filter based on wide-bandgap semiconductors, which have properties that are superior to classical silicon devices. An active power filter’s design must take advantage of these benefits to build converters that are smaller, more efficient, and consume fewer resources. However, wide-bandgap semiconductors also present design challenges. Because the most commonly used active power filters in the industry are based on two-level voltage source converters, the research for this doctoral thesis focuses on this converter topology. Moreover, its main objective is to contribute new modulation techniques that are specially designed to work with wide-bandgap semiconductors. The proposed modulations consider different aspects, such as the computational cost of the algorithms, converter losses, and the electromagnetic distortion generated. First, this thesis presents a hexagonal sigma-delta (H-S¿) modulation based on sigma-delta (S¿) modulation. The properties of this modulation are studied, and the technique is compared with other widely used modulations. The comparison considers efficiency, harmonic distortion, the electromagnetic compatibility of the converter, and the type of wideband semiconductor used. In addition, a fast algorithm is mathematically developed to simplify the presented modulation and reduce its computational cost. Secondly, this thesis presents a family of sigma-delta modulations specially designed to improve electromagnetic compatibility: the reduced common-mode voltage sigma-delta (RCMV-S¿) modulations. These modulations avoid using the vectors that generate the maximum common-mode voltage, which significantly reduces the generated electromagnetic distortion without affecting the performance of the converter and its harmonic distortion. Finally, the proposed modulations are applied in a wide-bandgap power converter working as an active filter. Thus, it is verified that the techniques presented in this thesis will obtain satisfactory results when implemented in commercial active power filters.Els equips elèctrics i electrònics necessiten corrents i tensions sinusoïdals per funcionar correctament. Existeixen equips com els ordinadors, els electrodomèstics, els carregadors de vehicle elèctric o les llums LED, que poden distorsionar la xarxa i empitjorar la qualitat d'aquesta. Les xarxes elèctriques distorsionades poden causar el mal funcionament dels equips que s'hi connecten, reduir la seva vida útil i també empitjorar la seva eficiència. A la industria és habitual utilitzar filtres actius per a solucionar aquests problemes. Els filtres actius permeten minimitzar els harmònics presents a la Δxarxa, eliminar la potència reactiva no desitjada i equilibrar xarxes elèctriques desequilibrades. Aquesta tesi tracta sobre el disseny i la implementació d'un filtre actiu basat en semiconductors de banda ampla. Aquests semiconductors presenten propietats superiors als clàssics dispositius de silici. El disseny d'un filtre actiu ha d'aprofitar aquests avantatges per a construir convertidors més petits, eficients i que consumeixin menys recursos. Tanmateix, els semiconductors de banda ampla també presenten problemes que el disseny ha de solucionar. Els filtres actius més utilitzats en la indústria són els basats en convertidors de font de tensió (voltatge source converters) amb dos nivells. La recerca d'aquesta tesi doctoral està focalitzada en aquesta topologia de convertidor, i el seu principal objectiu és l’aportació de noves tècniques de modulació especialment dissenyades per treballar amb semiconductors de banda ampla. Les modulacions proposades tenen en compte diferents aspectes: el cost computacional dels algoritmes, les pèrdues del convertidor i la distorsió electromagnètica generada. En primer lloc, es presenta una modulació sigma-delta hexagonal (H-__) que es basa en la modulació sigma-delta (ΣΔ). S'estudien les propietats d'aquesta modulació i la tècnica es compara amb altres modulacions àmpliament usades. La comparativa realitzada considera l’eficiència, la distorsió harmònica, la compatibilitat electromagnètica del convertidor i el tipus de semiconductor de banda ampla emprat. Addicionalment, es desenvolupa matemàticament un algoritme ràpid per simplificar la modulació presentada i reduir el seu cost computacional. En segon lloc, es presenta una família de modulacions sigma-delta especialment dissenyades per millorar la compatibilitat electromagnètica: les modulacions sigmadelta amb tensió en mode comú reduïda (RCMV-ΣΔ ). Aquestes modulacions eviten fer servir els vectors que generen la màxima tensió en mode comú. D'aquesta manera es redueix significativament la distorsió electromagnètica generada sense afectar de forma notable al rendiment del convertidor ni a la seva distorsió harmònica. Finalment, les modulacions proposades s'apliquen en un convertidor de potència, basat en semiconductors de banda ampla, que treballa com a filtre actiu. Això es verifica que les tècniques presentades en aquesta tesi poden ser implementades en filtres actius comercials obtenint resultats satisfactoris.Postprint (published version

Gallium Nitride Converters for Spacecraft Applications

This work presents the development and evaluation of several Point-of-Load (PoL) Gallium Nitride (GaN) high electron mobility transistors (HEMTs) based synchronous buck converters for computational loads in small spacecraft applications. Design modifications to existing controllers and PCB layout is discussed to maximize the benefits of GaN for these converters. The radiation performance of these converters and in-situ measurements is presented. This work also presents the development of a modular power system architecture for 1U CubeSat compute boards including the electrical and grounding layout, mechanical interface, and size layout. The PoL converter is based on the synchronous buck topology utilizing the Linear Technologies LTC3833 and the Texas Instruments LM25141-Q1 controllers and the EPC 2014C, EPC 2015C, Teledyne TDG100E15B, and GaN Systems GS61004B GaN HEMTs. GaN devices are not only attractive to power electronics engineers in general due to their wide bandgap, low gate capacitance, and low on resistance they also show very promising performance in high radiation environments without the need for expensive radiation-hardened design. Several converters utilizing both commercial-off-the-shelf products and radiation hardened devices were developed and compared to the GaN converters to allow for a comparison between all devices to evaluate the performance of these new devices

Radiation-Tolerant, GaN-based Point of Load Converters for Small Spacecraft Missions

As computational loads for spacecraft continue to grow, the requirements levied on power-conversion electronics have become increasingly demanding. Designing for compute-intensive processing capabilities in the CubeSat form-factor further encourages the use of lightweight, compact, and efficient power-conversion electronics. However, the radiation-tolerant and radiation-hardened point-of-load converters available from existing vendors are large, expensive, and inefficient relative to their commercial counterparts. To alleviate this disparity, this paper presents the design, development, and testing of three radiation-tolerant, point-of-load (PoL) converters using Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMT) and commercial controllers to enable the success of future small-satellite missions

Radiation-Tolerant High-Power Density Gallium Nitride Point-of-Load Converters

Modern space missions push the limits of on-board power processing making high current output, power dense converters increasingly more crucial for mission success. Increasing power density and efficiency while reducing the converter size, weight, thermal dissipation, and overall cost has become increasingly more difficult with the radiation-hardened converters that are available. Designers are forced to operate at slower switching speeds in comparison to their commercial counterparts. This paper will present the design, development, and testing of three synchronous buck converter drop-on modules which utilize the EPC 2030, 2218, and GaN Systems GS61008T Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT), inductor DC resistance current sensing, thermal dissipation techniques, and an Analog Devices LTC7800 controller to ensure the success of future small-satellite applications

Design of a 7.5 kW Dual Active Bridge Converter in 650 V GaN Technology for Charging Applications

High-voltage GaN switches offer low conduction and commutation losses compared with their Si counterparts, enabling the development of high-efficiency switching-mode DC-DC converters with increased switching frequency, faster dynamics, and more compact dimensions. Nonetheless, the potential of GaN switches can be fully exploited only by means of accurate simulations, optimal switch driving, suitable converter topology, accurate component selection, PCB layout optimization, and fast digital converter control. This paper describes the detailed design, simulation, and implementation of an air-cooled, 7.5 kW, dual active bridge converter exploiting commercial 650 V GaN switches, a compact planar transformer, and low ESL/ESR metal film capacitors. The isolated bidirectional converter operates at a 200 kHz switching frequency, with an output voltage range of 200-500 V at nominal 400 V input voltage, and a maximum output current of 28 A, with a wide full-power ZVS region. The overall efficiency at full power is 98.2%. This converter was developed in particular for battery charging applications, when bidirectional power flow is required

Investigation of a GaN-Based Power Supply Topology Utilizing Solid State Transformer for Low Power Applications

Gallium nitride (GaN) power devices exhibit a much lower gate capacitance for a similar on-resistance than its silicon counterparts, making it highly desirable for high-frequency operation in switching converters, which leads to their significant benefits on power density, cost, and system volume. High-density switching converters are being realized with GaN power devices due to their high switching speeds that reduce the size of energy-storage circuit components. The purpose of this dissertation research is to investigate a new isolated GaN AC/DC switching converter based on solid-state transformer configuration with a totem-pole power factor corrector (PFC) front-end, a half-bridge series-resonant converter (SRC) for power conversion, and a current-doubler rectifier (CDR) at its output. A new equivalent circuit model for the converter is constructed consisting of a loss-free resistor model for the PFC rectifier with first harmonic approximation model for the SRC and the CDR. Then, state-space analysis is performed to derive the converter transfer function in order to design the controllers to yield sufficient phase margins. The converter offers the advantages of voltage regulation feature of the solid-state transformer, low harmonics and close-to-unity power factor of the PFC rectifier, soft-switching of the half-bridge SRC, reduced size of the high-frequency transformer, and smaller leakage inductance of the CDR which is used for low-voltage high-current applications as the CDR draws half of the load current in the transformer secondary side yielding less copper losses. A high-frequency nanocrystalline toroid transformer, based on a modified equation to determine its leakage inductance, is designed and fabricated to satisfy the performance specifications of the converter. A meticulously planned gate driving strategy together with a Kelvin-source return circuitry is used to mitigate Miller effects, minimize gate ringing, and minimize the parasitics of the pull-down and pull-up loops of the converter. A new programming method that combines MATLAB Simulink embedded coder with code composer studio for the TMS320F28335 digital signal processor (DSP) controller is developed and demonstrated. Finally, the GaN-based AC/DC converter is experimentally verified for a 120Vac to 48Vdc/60Vdc conversion operating at 100 kHz for various loadings