A 30mV input battery-less power management system

This paper presents a fully-integrated on chip battery-less power management system through energy harvesting circuit developed in a 130nm CMOS process. A 30mV input voltage from a TEG is able to be boosted by the proposed Complementary Metal-Oxide-Semiconductor (CMOS) voltage booster and a dynamic closed loop power management to a regulated 1.2V. Waste body heat is harvested through Thermoelectric energy harvesting to power up low power devices such as Wireless Body Area Network. A significant finding where 1 Degree Celsius thermal difference produces a minimum 30mV is able to be boosted to 1.2V. Discontinuous Conduction Mode (DCM) digital control oscillator is the key component for the gate control of the proposed voltage booster. Radio Frequency (RF) rectifier is utilized to act as a start-up mechanism for voltage booster and power up the low voltage closed loop power management circuit. The digitally control oscillator and comparator are able to operate at low voltage 600mV which are powered up by a RF rectifier, and thus to kick-start the voltage booster

A 32 mV/69 mV input voltage booster based on a piezoelectric transformer for energy harvesting applications

This paper presents a novel method for battery-less circuit start-up from ultra-low voltage energy harvesting sources. The approach proposes for the first time the use of a Piezoelectric Transformer (PT) as the key component of a step-up oscillator. The proposed oscillator circuit is first modelled from a theoretical point of view and then validated experimentally with a commercial PT. The minimum achieved start-up voltage is about 69 mV, with no need for any external magnetic component. Hence, the presented system is compatible with the typical output voltages of thermoelectric generators (TEGs). Oscillation is achieved through a positive feedback coupling the PT with an inverter stage made up of JFETs. All the used components are in perspective compatible with microelectronic and MEMS technologies. In addition, in case the use of a ∼40 μH inductor is acceptable, the minimum start-up voltage becomes as low as about 32 mV

Harvesting Ultra-Low Power Wireless Signals in the GHz Range

We present methods for harvesting wireless energy as low as -30 dBm (1uW) from the 2.4 GHz frequency range (e.g. WiFi signals) with discrete components. We have constructed a proof-of-concept device which is capable of operating at -18.8 dBm (13.2 uW) with no onboard power sources, relying solely on the 2.4 GHz energy source. The device is constructed on a PCB and consists of an impedance matching network, a rectifier, and a DC-DC converter. The impedance matching network matches a 2.4 GHz 50 Ohm input source to the high impedance rectifier and provides a passive boost. The rectifier converts the AC signal from the impedance matching network to a DC signal. This DC signal feeds into the DC-DC converter subsystem which boosts the voltage from about 45 mV DC to a clean 95 mV DC output

CMOS indoor light energy harvesting system for wireless sensing applications

Dissertação para obtenção do Grau de Doutor em Engenharia Electrotécnica e de ComputadoresThis research thesis presents a micro-power light energy harvesting system for indoor environments. Light energy is collected by amorphous silicon photovoltaic (a-Si:H PV) cells, processed by a switched-capacitor (SC) voltage doubler circuit with maximum power point tracking (MPPT), and finally stored in a large capacitor. The MPPT Fractional Open Circuit Voltage (VOC) technique is implemented by an asynchronous state machine (ASM) that creates and, dynamically, adjusts the clock frequency of the step-up SC circuit, matching the input impedance of the SC circuit to the maximum power point (MPP) condition of the PV cells. The ASM has a separate local power supply to make it robust against load variations. In order to reduce the area occupied by the SC circuit, while maintaining an acceptable efficiency value, the SC circuit uses MOSFET capacitors with a charge reusing scheme for the bottom plate parasitic capacitors. The circuit occupies an area of 0.31 mm2 in a 130 nm CMOS technology. The system was designed in order to work under realistic indoor light intensities. Experimental results show that the proposed system, using PV cells with an area of 14 cm2, is capable of starting-up from a 0 V condition, with an irradiance of only 0.32 W/m2. After starting-up, the system requires an irradiance of only 0.18 W/m2 (18 mW/cm2) to remain in operation. The ASM circuit can operate correctly using a local power supply voltage of 453 mV, dissipating only 0.085 mW. These values are, to the best of the authors’ knowledge, the lowest reported in the literature. The maximum efficiency of the SC converter is 70.3% for an input power of 48 mW, which is comparable with reported values from circuits operating at similar power levels.Portuguese Foundation for Science and Technology (FCT/MCTES), under project PEst-OE/EEI/UI0066/2011, and to the CTS multiannual funding, through the PIDDAC Program funds. I am also very grateful for the grant SFRH/PROTEC/67683/2010, financially supported by the IPL – Instituto Politécnico de Lisboa

A Subthreshold Cross-Coupled Hybrid Charge Pump for 50-mV Cold-Start

In this article, a fully-integrated switched-capacitor DC-DC converter based on a Dickson charge pump able to work with input voltage levels that force the transistors working in subthreshold region is presented. The proposed topology exploits resistors in the charge transfer switch in order to overcome the limits of conventional solutions when working in the subthreshold regime. Post-layout simulations using a 28-nm FD-SOI technology show that the CP can boost an input voltage as low as 50 mV to a maximum output voltage of 270 mV, keeping a settling time about 25X lower than the conventional dual-branch cross-coupled charge pump and a voltage conversion efficiency higher than 76%. The proposed topology is particularly suited for the start-up of power management units supplied by thermoelectric generators

Osciladores de ultra-baixa-tensão com aplicação em circuitos de captação de energia

Tese (doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico, Programa de Pós-Graduação em Engenharia Elétrica, Florianópolis, 2014Abstract: This thesis describes the analysis and design of oscillators and charge pumps that can operate with very low supply voltages. The focus is on operation of the MOS transistor in the triode region owing to the limited voltage options available. Special attention has been given to the properties of the zero-VT transistor due to its high drive capability at low voltage. In order to investigate the minimum supply voltage for MOSFET oscillators, three topologies were studied. Two of them, namely the enhanced swing ring and the enhanced swing Colpitts oscillators, can operate with supply voltages below the thermal voltage, kT =q. Simplified theoretical expressions for the minimum supply voltage, oscillation frequency and minimum transistor gain of the oscillators were derived. Measurement results obtained using prototypes built with zero-VT transistors verified the operation of the oscillators for a supply voltage as low as 30 mV and 3.5 mV with high swing amplitude for arrangements built with integrated and off-theshelfinductors, respectively. The application of the ultra-low-voltage oscillators to energy harvesting circuits was addressed in this work. In order to convert the ac signal of the oscillator into a dc signal, the popular Dickson charge pump converter was employed. Expressions for the output voltage, input resistance and power converter efficiency of the Dickson charge pump operating at ultra-low voltages were derived. Experimental results obtained with prototypes built with the enhanced swing ring oscillator and the Dickson charge pump confirmed the feasibility of obtaining a dc output equal to 1 V at current consumptions of 100 nA and 1 µA from input voltages of 10 mV and 23 mV, respectively.O presente trabalho apresenta a análise, projeto e experimentação de osciladores e conversores dc-dc elevadores operando a muito baixas tensões de alimentação. Devido aos baixos valores de tensão de alimentação de interesse deste trabalho, especial atenção foi dada à operação do transistor MOS na região triodo e às propriedades do transistor zero-VT, graças a sua alta capacidade de corrente para baixas tensões. Com o objetivo de investigar a mínima tensão de alimentação de osciladores a MOSFET, três topologias foram estudadas. Duas delas, chamadas de oscilador em anel com elevada excursão desinal e oscilador Colpitts com elevada excursão de sinal, podem trabalhar com tensões de alimentação inferiores à tensão térmica, kT /q. Expressões simplificadas para a mínima tensão de alimentação, frequência de oscilação e mínimo ganho do transistor foram derivadas para cada topologia. Resultados experimentais obtidos com protótipos implementados com transistores zero-VT comprovam a operação dos osciladores com tensões tão baixas quanto 30 mV e 3,5 mV em circuitos construídos com indutores integrados e discretos, respectivamente. A aplicação dos osciladores a circuitos de captação de energia (energy harvesting circuits) a partir de fontes de alimentação de ultra-baixa-tensão foi estudada neste trabalho. Com o propósito de converter tensões ac geradas pelos osciladores em sinais dc, o clássico conversor Dickson foi utilizado. Expressões para a tensão de saída, resistência de entrada e eficiência de conversão de potência do conversor Dickson operando a ultra-baixas-tensões foram derivadas. Resultados experimentais obtidos com protótipos construídos com o oscilador em anel com elevada excursão de sinal e com o conversor Dickson, provaram a possibilidade de se obter uma tensão dc na saída de 1 V para correntes de carga de 100 nA e 1 µA a partir de tensões de entrada de 10 mV e 23 mV, respectivamente

Smart energy management and conversion

This chapter introduced power management circuits and energy storage unit designs for sub‐1 mW low power energy harvesting technologies, including indoor light energy harvesting, thermoelectric energy harvesting and vibration energy harvesting. The solutions address several of the problems associated with energy harvesting, power management and storage issues including low voltage operation, self‐start, efficiency (conversion efficiency as well as impact of power consumption of the power management circuit itself), energy density and leakage current levels. Additionally, efforts to miniaturize and integrate magnetic parts as well as integrate discrete circuits onto silicon are outlined to offer improvements in cost, size and efficiency. Finally initial results from efforts to improve energy density of storage devices using nanomaterials are introduced

Pico-grid: Multiple Multitype Energy Harvesting System

This thesis focuses on the development of a low power energy harvesting system specifically targeted for wireless sensor nodes (WSN) and wireless body area network (WBAN) applications. The idea for the system is derived from the operation of a micro-grid and therefore is termed as a pico-grid and it is capable of simultaneously delivering power from multiple and multitype energy harvesters to the load at the same time, through the proposed parallel load sharing mechanism achieved by a voltage droop control method. Solar panels and thermoelectric generator (TEG) are demonstrated as the main energy harvesters for the system. Since the magnitude of the output power of the harvesters is time-varying, the droop gain in the droop feedback circuitry should be designed to be dynamic and self-adjusted according to this variation. This ensures that the maximum power is capable to be delivered to the load at all times. To achieve this, the droop gain is integrated with a light dependent resistor (LDR) and thermistor whose resistance varies with the magnitude of the source of energy for the solar panel and TEG, respectively. The experimental results demonstrate a successful variation droop mechanism and all connected sources are able to share equal load demands between them, with a maximum load sharing error of 5 %. The same mechanism is also demonstrated to work for maximum power point tracking (MPPT) functionality. This concept can potentially be extended to any other types of energy harvester. The integration of energy storage elements becomes a necessity in the pico-grid, in order to support the intermittent and sporadic nature of the output power for the harvesters. A rechargeable battery and supercapacitor are integrated in the system, and each is accurately designed to be charged when the loading in the system is low and discharged when the loading in the system is high. The dc bus voltage which indicates the magnitude of the loading in the system is utilised as the signal for the desired mode of operation. The constructed system demonstrates a successful operation of charging and discharging at specific levels of loading in the system. The system is then integrated and the first wearable prototype of the pico-grid is built and tested. A successful operation of the prototype is demonstrated and the load demand is shared equally between the source converters and energy storage. Furthermore, the pico-grid is shown to possess an inherent plug-and-play capability for the source and load converters. Few recommendations are presented in order to further improve the feasibility and reliability of the prototype for real world applications. Next, due to the opportunity of working with a new semiconductor compound and accessibility to the fabrication facilities, a ZnON thin film diode is fabricated and intended to be implemented as a flexible rectifier circuit. The fabrication process can be done at low temperature, hence opening up the possibility of depositing the device on a flexible substrate. From the temperature dependent I-V measurements, a novel method of extracting important parameters such as ideality factor, barrier height, and series resistance of the diode based on a curve fitting method is proposed. It is determined that the ideality factor of the fabricated diode is high (> 2 at RT), due to the existence of other transport mechanism apart from thermionic emission that dominates the conduction process at lower temperature. It is concluded that the high series resistance of the fabricated diode (3.8 kΩ at RT) would mainly hinder the performance of the diode in a rectifier circuit.Yayasan Khazanah & Cambridge Trus