Leakage Power Reduction Techniques in Deep Submicron Technologies for VLSI Applications

AbstractThe leakage power dissipation has become one of the most challenging issues in low power VLSI circuit designs especially with on-chip devices as it doubles for every two years[4]-[5]. The scaling down of threshold voltage has contributed enormously towards increase in subthreshold leakage current thereby making the static (leakage) power dissipation very high. According to International Technology Roadmap for Semiconductors (ITRS), the total power dissipation may be significantly contributed by leakage power dissipation [1]. The battery operated devices with long duration in standby mode may be drained out very quickly due to the leakage power. In CMOS submicron technologies, leakage power dissipation plays a significant role. However, various low power design techniques for efficient minimization of leakage power are proposed in the literature review. A comprehensive study and analysis of various leakage power minimization techniques have been presented in this paper. The present research study and its corresponding analysis are mainly focusing on circuit performance parameters. It is implied from the current literature that only an appropriate choice of leakage power minimization technique for a specific application can be effectively carried by a VLSI circuit designer based on sequential analytical approach

DESIGN APPROACHES FOR LOW POWER- LOW AREA D FLIP FLOP S IN NANO TECHNOLOGY

This paper enumerates design of D flip flop with low power and low area for low power applications, for that analysis of various D-flip flops for low power dissipation ,area and delays is carried out at 0.12um to achieve low power, low-area the technology is scaled down to nanometer ranges, due to shrinking process, the leakage power tends to play a vital role in total power consumption at nano meter technology. In this paper, different D flip flop circuits are designed using Berkeley Short Channel Insulated Gate MOSFET (BSIM4) model equations., in this paper to reduce leakage power at 90nm 70nm and 50nm we implement leakage power reduction techniques six techniques are considered they are namely Sleep transistor, sleepy stack, Dual sleep ,Dual stack Forced Transistor sleep (FTS) and Sleepy keeper From the results, it is observed that SLEEP TRANSISTOR, and SLEEPY KEEPER.FORCED TRANSISTOR SLEEP techniques produces lower power dissipation than the other techniques , in this paper a qualitative comparison is done with the help of Dsch,, Micro wind Simulation tools, this paper concludes that a leakage reduction technique produce different power optimization levels for different architectures and employing a suitable technique for a particular architecture will be an effective way of reducing the leakage current and thereby static power

FORCED STACK SLEEP TRANSISTOR (FORTRAN): A NEW LEAKAGE CURRENT REDUCTION APPROACH IN CMOS BASED CIRCUIT DESIGNING

Reduction in leakage current has become a significant concern in nanotechnology-based low-power, low-voltage, and high-performance VLSI applications. This research article discusses a new low-power circuit design the approach of FORTRAN (FORced stack sleep TRANsistor), which decreases the leakage power efficiency in the CMOS-based circuit outline in VLSI domain. FORTRAN approach reduces leakage current in both active as well as standby modes of operation. Furthermore, it is not time intensive when the circuit goes from active mode to standby mode and vice-versa. To validate the proposed design approach, experiments are conducted in the Tanner EDA tool of mentor graphics bundle on projected circuit designs for the full adder, a chain of 4-inverters, and 4-bit multiplier designs utilizing 180nm, 130nm, and 90nm TSMC technology node. The outcomes obtained show the result of a 95-98% vital reduction in leakage power as well as a 15-20% reduction in dynamic power with a minor increase in delay. The result outcomes are compared for accuracy with the notable design approaches that are accessible for both active and standby modes of operation

CAD Tool Design for NCL and MTNCL Asynchronous Circuits

This thesis presents an implementation of a method developed to readily convert Boolean designs into an ultra-low power asynchronous design methodology called MTNCL, which combines multi-threshold CMOS (MTCMOS) with NULL Convention Logic (NCL) systems. MTNCL provides the leakage power advantages of an all high-Vt implementation with a reasonable speed penalty compared to the all low-Vt implementation, and has negligible area overhead. The proposed tool utilizes industry-standard CAD tools. This research also presents an Automated Gate-Level Pipelining with Bit-Wise Completion (AGLPBW) method to maximize throughput of delay-insensitive full-word pipelined NCL circuits. These methods have been integrated into the Mentor Graphics and Synopsis CAD tools, using a C-program, which performs the majority of the computations, such that the method can be easily ported to other CAD tool suites. Both methods have been successfully tested on circuits, including a 4-bit × 4-bit multiplier, an unsigned Booth2 multiplier, and a 4-bit/8-operation arithmetic logic unit (ALU

Dissipazione di potenza nei circuiti CMOS: origini e tecniche per la riduzione

Il continuo scaling dei MOSFET ha comportato, oltre ai benefici di maggior integrazione, capacità computazionale e maggior funzionalità, un aumento preoccupante del consumo di potenza dei circuiti. Ciò è dovuto sia ad una componente dinamica, causata dallo switch dei singoli dispositivi, sia ad una componente statica, cioè provocata da correnti di perdita, la cui intensità è aumentata con la diminuzione delle dimensioni dei transistor. In questo lavoro vengono analizzate velocemente le principali cause di consumo statico e i fattori che maggiormente le influenzano. Successivamente vengono presentate varie tecniche utili alla riduzione del consumo di potenza, sia della componente dinamica che di quella statica e che agiscono a diversi livelli di astrazioneope

Ultra-Low Power and Radiation Hardened Asynchronous Circuit Design

This dissertation proposes an ultra-low power design methodology called bit-wise MTNCL for bit-wise pipelined asynchronous circuits, which combines multi-threshold CMOS (MTCMOS) with bit-wise pipelined NULL Convention Logic (NCL) systems. It provides the leakage power advantages of an all high-Vt implementation with a reasonable speed penalty compared to the all low-Vt implementation, and has negligible area overhead. It was enhanced to handle indeterminate standby states. The original MTNCL concept was enhanced significantly by sleeping Registers and Completion Logic as well as Combinational circuits to reduce area, leakage power, and energy per operation. This dissertation also develops an architecture that allows NCL circuits to recover from a Single Event Upset (SEU) or Single Event Latchup (SEL) fault without any data loss. Finally, an accurate throughput derivation formula for pipelined NCL circuits was developed, which can be used for static timing analysis

Enhancing Power Efficient Design Techniques in Deep Submicron Era

Excessive power dissipation has been one of the major bottlenecks for design and manufacture in the past couple of decades. Power efficient design has become more and more challenging when technology scales down to the deep submicron era that features the dominance of leakage, the manufacture variation, the on-chip temperature variation and higher reliability requirements, among others. Most of the computer aided design (CAD) tools and algorithms currently used in industry were developed in the pre deep submicron era and did not consider the new features explicitly and adequately. Recent research advances in deep submicron design, such as the mechanisms of leakage, the source and characterization of manufacture variation, the cause and models of on-chip temperature variation, provide us the opportunity to incorporate these important issues in power efficient design. We explore this opportunity in this dissertation by demonstrating that significant power reduction can be achieved with only minor modification to the existing CAD tools and algorithms. First, we consider peak current, which has become critical for circuit's reliability in deep submicron design. Traditional low power design techniques focus on the reduction of average power. We propose to reduce peak current while keeping the overhead on average power as small as possible. Second, dual Vt technique and gate sizing have been used simultaneously for leakage savings. However, this approach becomes less effective in deep submicron design. We propose to use the newly developed process-induced mechanical stress to enhance its performance. Finally, in deep submicron design, the impact of on-chip temperature variation on leakage and performance becomes more and more significant. We propose a temperature-aware dual Vt approach to alleviate hot spots and achieve further leakage reduction. We also consider this leakage-temperature dependency in the dynamic voltage scaling approach and discover that a commonly accepted result is incorrect for the current technology. We conduct extensive experiments with popular design benchmarks, using the latest industry CAD tools and design libraries. The results show that our proposed enhancements are promising in power saving and are practical to solve the low power design challenges in deep submicron era

Addressing On-Chip Power Conversion and Dissipation Issues in Many-Core System-on-a-Chip based on Conventional Silicon and Emerging Nanotechnologies

Title from PDF of title page viewed August 27, 2018Dissertation advisor: Masud H ChowdhuryVitaIncludes bibliographical references (pages 158-163)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2017Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC allows various small and large electronic systems to be implemented in a single chip. This approach enables the miniaturization of design blocks that leads to high density transistor integration, faster response time, and lower fabrication costs. To reap the benefits of SOC and uphold the miniaturization of transistors, innovative power delivery and power dissipation management schemes are paramount. This dissertation focuses on on-chip integration of power delivery systems and managing power dissipation to increase the lifetime of energy storage elements. We explore this problem from two different angels: On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce parasitic effects, and allow faster and efficient power delivery for microprocessors. Power gating techniques, on the other hand, reduce the power loss incurred by circuit blocks during standby mode. Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic dependency on the dynamic switching power and a more than linear dependency on static power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power loss, the supply power should be reduced. A significant reduction in power dissipation occurs when portions of a microprocessor operate at a lower voltage level. This reduction in supply voltage is achieved via voltage regulators or converters. Voltage regulators are used to provide a stable power supply to the microprocessor. The conventional off-chip switching voltage regulator contains a passive floating inductor, which is difficult to be implemented inside the chip due to excessive power dissipation and parasitic effects. Additionally, the inductor takes a very large chip area while hampering the scaling process. These limitations make passive inductor based on-chip regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon-on ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability to control the threshold voltage via bias voltage at the back gate makes both devices more flexible for sleep transistors design than a bulk MOSFET. The proposed approaches simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep transistor, and improve power dissipation. In addition, the design provides a dynamically controlled Vt for times when the circuit needs to be in a sleep or switching mode.Introduction -- Background and literature review -- Fully integrated on-chip switching voltage regulator -- Hybrid LDO voltage regulator based on cascaded second order multiple feedback loop -- Single and dual output two-stage on-chip power management system -- Sleep transistor design using double-gate FDSOI -- Subthreshold region sleep transistor design -- Conclusio

Methodology for Standby Leakage Power Reduction in Nanometer-Scale CMOS Circuits

In nanometer-scale CMOS technology, leakage power has become a major component of the total power dissipation due to the downscaling of threshold voltage and gate oxide thickness. The leakage power consumption has received even more attention by increasing demand for mobile devices. Since mobile devices spend a majority of their time in a standby mode, the leakage power savings in standby state is critical to extend battery lifetime. For this reason, low power has become a major factor in designing CMOS circuits. In this dissertation, we propose a novel transistor reordering methodology for leakage reduction. Unlike previous technique, the proposed method provides exact reordering rules for minimum leakage formation by considering all leakage components. Thus, this method formulates an optimized structure for leakage reduction even in complex CMOS logic gate, and can be used in combination with other leakage reduction techniques to achieve further improvement. We also propose a new standby leakage reduction methodology, leakage-aware body biasing, to overcome the shortcomings of a conventional Reverse Body Biasing (RBB) technique. The RBB technique has been used to reduce subthreshold leakage current. Therefore, this technique works well under subthreshold dominant region even though it has intrinsic structural drawbacks. However, such drawbacks cannot be overlooked anymore since gate leakage has become comparable to subthreshold leakage in nanometer-scale region. In addition, BTBT leakage also increases with technology scaling due to the higher doping concentration applied in each process technology. In these circumstances, the objective of leakage minimization is not a single leakage source but the overall leakage sources. The proposed leakage-aware body biasing technique, unlike conventional RBB technique, considers all major leakage sources to minimize the negative effects of existing body biasing approach. This can be achieved by intelligently applying body bias to appropriate CMOS network based on its status (on-/off-state) with the aid of a pin/transistor reordering technique

CAD Tools for Synthesis of Sleep Convention Logic

This dissertation proposes an automated flow for the Sleep Convention Logic (SCL) asynchronous design style. The proposed flow synthesizes synchronous RTL into an SCL netlist. The flow utilizes commercial design tools, while supplementing missing functionality using custom tools. A method for determining the performance bottleneck in an SCL design is proposed. A constraint-driven method to increase the performance of linear SCL pipelines is proposed. Several enhancements to SCL are proposed, including techniques to reduce the number of registers and total sleep capacitance in an SCL design