DTMOS-Based 0.4V Ultra Low-Voltage Low-Power VDTA Design and Its Application to EEG Data Processing

In this paper, an ultra low-voltage, ultra low-power voltage differencing transconductance amplifier (VDTA) is proposed. DTMOS (Dynamic Threshold Voltage MOS) transistors are employed in the design to effectively use the ultra low supply voltage. The proposed VDTA is composed of two operational transconductance amplifiers operating in the subthreshold region. Using TSMC 0.18µm process technology parameters with symmetric ±0.2V sup¬ply voltage, the total power consumption of the VDTA block is found as just 5.96 nW when the transconductances have 3.3 kHz, 3 dB bandwidth. The proposed VDTA circuit is then used in a fourth-order double-tuned band-pass filter for processing real EEG data measurements. The filter achieves close to 64 dB dynamic range at 2% THD with a total power consumption of 12.7 nW

Techniques for low power analog, digital and mixed signal CMOS integrated circuit design

With the continuously expanding of market for portable devices such as wireless communication devices, portable computers, consumer electronics and implantable medical devices, low power is becoming increasingly important in integrated circuits. The low power design can increase operation time and/or utilize a smaller size and lighter-weight battery. In this dissertation, several low power complementary metal-oxide-semiconductor (CMOS) integrated circuit design techniques are investigated. A metal-oxide-semiconductor field effect transistor (MOSFET) can be operated at a lower voltage by forward-biasing the source-substrate junction. This approach has been investigated in detail and used to designing an ultra-low power CMOS operational amplifier for operation at ± 0.4 V. The issue of CMOS latchup and noise has been investigated in detail because of the forward biasing of the substrates of MOSFETs in CMOS. With increasing forward body-bias, the leakage current increases significantly. Dynamic threshold MOSFET (DTMOS) technique is proposed to overcome the drawback which is inherent in a forward-biased MOSFET. By using the DTMOS method with the forward source-body biased MOSFET, two low-power low-voltage CMOS VLSI circuits that of a CMOS analog multiplexer and a Schmitt trigger circuits are designed. In this dissertation, an adaptive body-bias technique is proposed. Adaptive body-bias voltage is generated for several operational frequencies. Another issue, which the chip design community is facing, is the development of portable, cost effective and low power supply voltage. This dissertation proposes a new cost-effective DC/DC converter design in standard 1.5 um n-well CMOS, which adopts a delay-line controller for voltage regulation

IoT応用向け環境RF信号RFエネルギーハーベスティングシステムの研究

電気通信大学201

Design of a low-voltage CMOS RF receiver for energy harvesting sensor node

In this thesis a CMOS low-power and low-voltage RF receiver front-end is presented. The main objective is to design this RF receiver so that it can be powered by a piezoelectric energy harvesting power source, included in a Wireless Sensor Node application. For this type of applications the major requirements are: the low-power and low-voltage operation, the reduced area and cost and the simplicity of the architecture. The system key blocks are the LNA and the mixer, which are studied and optimized with greater detail, achieving a good linearity, a wideband operation and a reduced introduction of noise. A wideband balun LNA with noise and distortion cancelling is designed to work at a 0.6 V supply voltage, in conjunction with a double-balanced passive mixer and subsequent TIA block. The passive mixer operates in current mode, allowing a minimal introduction of voltage noise and a good linearity. The receiver analog front-end has a total voltage conversion gain of 31.5 dB, a 0.1 - 4.3 GHz bandwidth, an IIP3 value of -1.35 dBm, and a noise figure lower than 9 dB. The total power consumption is 1.9 mW and the die area is 305x134.5 m2, using a standard 130 nm CMOS technology

New Possibilities In Low-voltage Analog Circuit Design Using Dtmos Transistors

(Doktora) -- İstanbul Teknik Üniversitesi, Fen Bilimleri Enstitüsü, 2013(PhD) -- İstanbul Technical University, Institute of Science and Technology, 2013Bu çalışmada DTMOS yaklaşımı çok düşük besleme gerilimlerinde çalışan çok düşük güç tüketimli devrelere başarıyla uygulanmıştır. Tasarlanan devreler arasında OTA, OP-AMP, CCII gibi analog aktif yapı blokları, çarpma devresi, sadece-MOS yapılar gibi devreler bulunmaktadır. Tasarlanan devreler SPICE benzetimleri ile doğrulanmıştır. İleri yönde gövde kutuplamaya bağlı olarak DTMOS transistorun yapısından kaynaklanan, efektif olarak düşük eşik gerilimli çalışma özelliği nedeniyle, çok düşük güç tüketimli ve çok düşük gerilimli devrelerde DTMOS yaklaşımının geçerli bir alternatif olduğu bu çalışmayla gösterilmiştir. DTMOS yaklaşımının geniş bir alanda çeşitlilik gösteren analog devre yapılarında çok düşük besleme gerilimlerinde bile kabul edilebilir bir performansla kullanılabileceği bulunmuştur.In this study, DTMOS approach to the design of ultra low-voltage and ultra low-power analog circuits, has been successfully applied to the circuits ranging from EEG filtering circuits, speech processing filters in hearing aids, multipliers, analog active building blocks: OTA, OP-AMP, CCII to MOS-only circuits. The proposed circuits are verified with SPICE simulations. It is found that in designing ultra low-voltage, ultra low-power analog circuits, DTMOS approach is a viable alternative due to its inherent characteristic of effective low threshold voltage behaviour under forward body bias. This approach can be applied to several analog application subjects with acceptable performance under even ultra low supply voltages.DoktoraPh

A low-voltage RF-CMOS receiver front-end for a wireless fall detection microsystem

Dissertação para obtenção do Grau de Mestre em Engenharia Eletrotécnica e de Computadores, pela Universidade Nova de Ciências e TecnologiaIn this thesis a Low Noise Amplifier-Mixer, the LM, is presented. In the Low Noise Amplifier a common-gate, a common-source and a buffer were used and the last one with the target to work in single-end configuration. A typical structure common-gate was used in the Mixer. The development of this structure had as goal, the implementation of a circuit capable to be used in a fall detection system for disable patients, monitoring the state and behavior remotely by an hospital. The conception of this circuit did not have only the objective, the prevention of falls, but also the contribute for the Medicine enrichment, as well as the research in several institutions. It was developed to cover ISM and WMTS frequency bands since 400 to 900MHz and to operate at low voltage in a range values between 0.6 and 1.2 V. The system was totally implemented with MOSFETs without reactive elements using the UMC CMOS 130 nm technology. Some techniques are used in design and optimizing with the target of low voltage and low consumption. The circuit present a total consumption of 11.5 mW extracted from a supply voltage of 1.2 V and a consumption of 3.5 mW extracted from a supply voltage of 0.6 V

Utilizing Unconventional CMOS Techniques for Low Voltage Low Power Analog Circuits Design for Biomedical Applications

Tato disertační práce se zabývá navržením nízkonapěťových, nízkopříkonových analogových obvodů, které používají nekonvenční techniky CMOS. Lékařská zařízení na bateriové napájení, jako systémy pro dlouhodobý fyziologický monitoring, přenosné systémy, implantovatelné systémy a systémy vhodné na nošení, musí být male a lehké. Kromě toho je nutné, aby byly tyto systémy vybaveny baterií s dlouhou životností. Z tohoto důvodu převládají v biomedicínských aplikacích tohoto typu nízkopříkonové integrované obvody. Nekonvenční techniky jako např. využití transistorů s řízeným substrátem (Bulk-Driven “BD”), s plovoucím hradlem (Floating-Gate “FG”), s kvazi plovoucím hradlem (Quasi-Floating-Gate “QFG”), s řízeným substrátem s plovoucím hradlem (Bulk-Driven Floating-Gate “BD-FG”) a s řízeným substrátem s kvazi plovoucím hradlem (Bulk-Driven Quasi-Floating-Gate “BD-QFG”), se v nedávné době ukázaly jako efektivní prostředek ke zjednodušení obvodového zapojení a ke snížení velikosti napájecího napětí směrem k prahovému napětí u tranzistorů MOS (MOST). V práci jsou podrobně představeny nejdůležitější charakteristiky nekonvenčních technik CMOS. Tyto techniky byly použity pro vytvoření nízko napěťových a nízko výkonových CMOS struktur u některých aktivních prvků, např. Operational Transconductance Amplifier (OTA) založené na BD, FG, QFG, a BD-QFG techniky; Tunable Transconductor založený na BD MOST; Current Conveyor Transconductance Amplifier (CCTA) založený na BD-QFG MOST; Z Copy-Current Controlled-Current Differencing Buffered Amplifier (ZC-CC-CDBA) založený na BD MOST; Winner Take All (WTA) and Loser Take All (LTA) založený na BD MOST; Fully Balanced Four-Terminal Floating Nullor (FBFTFN) založený na BD-QFG technice. Za účelem ověření funkčnosti výše zmíněných struktur, byly tyto struktury použity v několika aplikacích. Výkon navržených aktivních prvků a příkladech aplikací je ověřován prostřednictvím simulačních programů PSpice či Cadence za použití technologie 0.18 m CMOS.This doctoral thesis deals with designing ultra-low-voltage (LV) low-power (LP) analog circuits utilizing the unconventional CMOS techniques. Battery powered medical devices such as; long term physiological monitoring, portable, implantable, and wearable systems need to be small and lightweight. Besides, long life battery is essential need for these devices. Thus, low-power integrated circuits are always paramount in such biomedical applications. Recently, unconventional CMOS techniques i.e. Bulk-Driven (BD), Floating-Gate (FG), Quasi-Floating-Gate (QFG), Bulk-Driven Floating-Gate (BD-FG) and Bulk-Driven Quasi-Floating-Gate (BD-QFG) MOS transistors (MOSTs) have revealed as effective devices to reduce the circuit complexity and push the voltage supply of the circuit towards threshold voltage of the MOST. In this work, the most important features of the unconventional CMOS techniques are discussed in details. These techniques have been utilized to perform ultra-LV LP CMOS structures of several active elements i.e. Operational Transconductance Amplifier (OTA) based on BD, FG, QFG, and BD-QFG techniques; Tunable Transconductor based on BD MOST; Current Conveyor Transconductance Amplifier (CCTA) based on BD-QFG MOST; Z Copy-Current Controlled-Current Differencing Buffered Amplifier (ZC-CC-CDBA) based on BD MOST; Winner Take All (WTA) and Loser Take All (LTA) based on BD MOST; Fully Balanced Four-Terminal Floating Nullor (FBFTFN) based on BD-QFG technique. Moreover, to verify the workability of the proposed structures, they were employed in several applications. The performance of the proposed active elements and their applications were investigated through PSpice or Cadence simulation program using 0.18 m CMOS technology.

A sub 1V bandgap reference circuit

This thesis proposes a novel technique for a low supply voltage temperature-independent reference voltage. With the scaling of supply voltages, the threshold voltages don’t scale proportionally and thus low supply reference circuits have replaced the conventional bandgap reference circuit. The first chapter of this work discusses the conventional bandgap references (The Widlar and Brokaw references). The terminology used in the bandgap world is introduced here. The second chapter investigates the existing low supply voltage reference circuits with their advantages and the limitations. A table discussing all the investigated circuits is provided towards the end of the chapter as a summary. Chapter Three proposes a novel technique to generate a temperature-independent voltage which does not use an operational amplifier. This chapter also provides a mathematical understanding for behavior of the circuit. Chapter Four talks about two variations of the proposed architecture. These variations are designed in order to improve the performance of the proposed circuit against power supply variations. Each one of them has its own merits and drawbacks. Finally Chapter Five discusses the effects of process variations and transient response of the proposed circuit. A digital trimming scheme using an EE-PROM is proposed to manage almost all of the process variation effects on the circuit

CMOS Integrated Circuits for RF-powered Wireless Temperature Sensor

This dissertation presents original research contributions in the form of twelve scientific publications that represent advances related to RF-to-DC converters, reference circuits (voltage, current and frequency) and temperature sensors. The primary focus of this research was to design efficient and low power CMOS-based circuit components, which are useful in various blocks of an RF-powered wireless sensor node.  The RF-to-DC converter or rectifier converts RF energy into DC energy, which is utilized by the sensor node. In the implementation of a CMOS-based RF-to-DC converter, the threshold voltage of MOS transistors mainly affects the conversion efficiency. Hence, for the first part of this research, different threshold voltage compensation schemes were developed for the rectifiers. These schemes were divided into two parts; first, the use of the MOSFET body terminal biasing technique and second, the use of an auxiliary circuit to obtain threshold voltage compensation. In addition to these schemes, the use of an alternate signaling scheme for voltage multiplier configuration of differential input RF-harvesters has also been investigated.  A known absolute value of voltage or current is the most useful for an integrated circuit. Thus, the circuit which generates the absolute value of voltage or current is cited as the voltage or current reference circuit respectively. Hence, in the second part of the research, simple, low power and moderately accurate, voltage and current reference circuits were developed for the power management unit of the sensor node. Besides voltage and current reference circuits, a frequency reference circuit was also designed. The use of the frequency reference circuit is in the digital processing and timing functions of the sensor node.  In the final part of the research, temperature sensing was selected as an application for the sensor node. Here, voltage and current based sensor cores were developed to sense the temperature. A smart temperature sensor was designed by using the voltage cores to obtain temperature information in terms of the duty-cycle. Similarly, the temperature equivalent current was converted into the frequency to obtain a temperature equivalent output signal.  All these implementations were done by using two integrated circuits which were fabricated during the year 2013-14.