Efficient scrub mechanisms for error-prone emerging memories

Journal ArticleMany memory cell technologies are being considered as possible replacements for DRAM and Flash technologies, both of which are nearing their scaling limits. While these new cells (PCM, STT-RAM, FeRAM, etc.) promise high density, better scaling, and non-volatility, they introduce new challenges. Solutions at the architecture level can help address some of these problems; e.g., prior re-search has proposed wear-leveling and hard error tolerance mechanisms to overcome the limited write endurance of PCM cells. In this paper, we focus on the soft error problem in PCM, a topic that has received little attention in the architecture community. Soft errors in DRAM memories are typically addressed by having SECDED support and a scrub mechanism. The scrub mechanism scans the memory looking for a single-bit error and corrects it be-fore the line experiences a second uncorrectable error. However, PCM (and other emerging memories) are prone to new sources of soft errors. In particular, multi-level cell (MLC) PCM devices will suffer from resistance drift, that increases the soft error rate and incurs high overheads for the scrub mechanism. This paper is the first to study the design of architectural scrub mechanisms, especially when tailored to the drift phenomenon in MLC PCM. Many of our solutions will also apply to other soft-error prone emerging memories. We first show that scrub overheads can be reduced with support for strong ECC codes and a lightweight error detection operation. We then design different scrub algorithms that can adaptively trade-off soft and hard errors. Using an approach that combines all proposed solutions, our scrub mechanism yields a 96.5% reduction in uncorrectable errors, a 24.4 × decrease in scrub-related writes, and a 37.8% reduction in scrub energy, relative to a basic scrub algorithm used in modern DRAM systems

The Influence of Knowledge on Managing Risk for the Success in Complex Construction Projects: The IPMA Approach

[EN] Organizations undertaking construction projects often deal with uncertainty and complexity. Risks include a wide range of occurrences that can lead to project failure. However, these difficulties may be minimized if risks are properly managed. In addition, knowledge management may emerge as a key element in facing unforeseen events and detecting the actions that are working well in other projects. In this context, this study intends to demonstrate the influence of managing organizational knowledge on risk management and the impact of both on the success of projects and associated businesses. To this end, a questionnaire was distributed among construction technicians, practitioners and managers in order to assess the importance of factors managing knowledge and risk and of success criteria. Thanks to the participation of almost four hundred respondents, cause-and-effect relationships are characterized by means of structural equation modeling, statistically confirming them. The specific links between the knowledge-management projects and the skills and abilities to face risks provided by the International Project Management Association (IPMA) standards, with a relation of 0.892 out of 1, justify the 75.1% of the success of the venture. These findings prove that the application of IPMA proposals enhances the required knowledge that leads to improved completion and delivery of complex construction projects in risky environments.All authors acknowledge the help received by the research group TEP-955 from the PAIDI (Junta de Andalucia, Spain).Cerezo-Narváez, A.; Pastor-Fernández, A.; Otero-Mateo, M.; Ballesteros-Pérez, P. (2022). The Influence of Knowledge on Managing Risk for the Success in Complex Construction Projects: The IPMA Approach. Sustainability. 14(15):1-30. https://doi.org/10.3390/su14159711130141

Remote health monitoring systems for elderly people: a survey

This paper addresses the growing demand for healthcare systems, particularly among the elderly population. The need for these systems arises from the desire to enable patients and seniors to live independently in their homes without relying heavily on their families or caretakers. To achieve substantial improvements in healthcare, it is essential to ensure the continuous development and availability of information technologies tailored explicitly for patients and elderly individuals. The primary objective of this study is to comprehensively review the latest remote health monitoring systems, with a specific focus on those designed for older adults. To facilitate a comprehensive understanding, we categorize these remote monitoring systems and provide an overview of their general architectures. Additionally, we emphasize the standards utilized in their development and highlight the challenges encountered throughout the developmental processes. Moreover, this paper identifies several potential areas for future research, which promise further advancements in remote health monitoring systems. Addressing these research gaps can drive progress and innovation, ultimately enhancing the quality of healthcare services available to elderly individuals. This, in turn, empowers them to lead more independent and fulfilling lives while enjoying the comforts and familiarity of their own homes. By acknowledging the importance of healthcare systems for the elderly and recognizing the role of information technologies, we can address the evolving needs of this population. Through ongoing research and development, we can continue to enhance remote health monitoring systems, ensuring they remain effective, efficient, and responsive to the unique requirements of elderly individuals

Parallel and Distributed Computing

The 14 chapters presented in this book cover a wide variety of representative works ranging from hardware design to application development. Particularly, the topics that are addressed are programmable and reconfigurable devices and systems, dependability of GPUs (General Purpose Units), network topologies, cache coherence protocols, resource allocation, scheduling algorithms, peertopeer networks, largescale network simulation, and parallel routines and algorithms. In this way, the articles included in this book constitute an excellent reference for engineers and researchers who have particular interests in each of these topics in parallel and distributed computing

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Improving Performance and Endurance for Crossbar Resistive Memory

Resistive Memory (ReRAM) has emerged as a promising non-volatile memory technology that may replace a significant portion of DRAM in future computer systems. When adopting crossbar architecture, ReRAM cell can achieve the smallest theoretical size in fabrication, ideally for constructing dense memory with large capacity. However, crossbar cell structure suffers from severe performance and endurance degradations, which come from large voltage drops on long wires. In this dissertation, I first study the correlation between the ReRAM cell switching latency and the number of cells in low resistant state (LRS) along bitlines, and propose to dynamically speed up write operations based on bitline data patterns. By leveraging the intrinsic in-memory processing capability of ReRAM crossbars, a low overhead runtime profiler that effectively tracks the data patterns in different bitlines is proposed. To achieve further write latency reduction, data compression and row address dependent memory data layout are employed to reduce the numbers of LRS cells on bitlines. Moreover, two optimization techniques are presented to mitigate energy overhead brought by bitline data patterns tracking. Second, I propose XWL, a novel table-based wear leveling scheme for ReRAM crossbars and study the correlation between write endurance and voltage stress in ReRAM crossbars. By estimating and tracking the effective write stress to different rows at runtime, XWL chooses the ones that are stressed the most to mitigate. Additionally, two extended scenarios are further examined for the performance and endurance issues in neural network accelerators as well as 3D vertical ReRAM (3D-VRAM) arrays. For the ReRAM crossbar-based accelerators, by exploiting the wearing out mechanism of ReRAM cell, a novel comprehensive framework, ReNEW, is proposed to enhance the lifetime of the ReRAM crossbar-based accelerators, particularly for neural network training. To reduce the write latency in 3D-VRAM arrays, a collection of techniques, including an in-memory data encoding scheme, a data pattern estimator for assessing cell resistance distributions, and a write time reduction scheme that opportunistically reduces RESET latency with runtime data patterns, are devised

A multi-criteria decision making approach for scaling and placement of virtual network functions

This paper investigates the joint scaling and placement problem of network services made up of virtual network functions (VNFs) that can be provided inside a cluster managing multiple points of presence (PoPs). Aiming at increasing the VNF service satisfaction rates and minimizing the deployment cost, we use both transport and cloud-aware VNF scaling as well as multi-attribute decision making (MADM) algorithms for VNF placement inside the cluster. The original joint scaling and placement problem is known to be NP-hard and hence the problem is solved by separating scaling and placement problems and solving them individually. The experiments are done using a dataset containing the information of a deployed digital-twin network service. These experiments show that considering transport and cloud parameters during scaling and placement algorithms perform more efficiently than the only cloud based or transport based scaling followed by placement algorithms. One of the MADM algorithms, Total Order Preference by Similarity to the Ideal Solution (TOPSIS), has shown to yield the lowest deployment cost and highest VNF request satisfaction rates compared to only transport or cloud scaling and other investigated MADM algorithms. Our simulation results indicate that considering both transport and cloud parameters in various availability scenarios of cloud and transport resources has significant potential to provide increased request satisfaction rates when VNF scaling and placement using the TOPSIS scheme is performed.This work was partially funded by EC H2020 5GPPP 5Growth Project (Grant 856709), Spanish MINECO Grant TEC2017-88373-R (5G-REFINE), Generalitat de Catalunya Grant 2017 SGR 1195 and the National Program on Equipment and Scientifc and Technical Infrastructure, EQC2018-005257-P under the European Regional Development Fund (FEDER). We would also like to thank Milan Groshev, Carlos Guimarães for providing dataset for scaling of robot manipulator based digital twin service