A SigmaDelta modulator for digital hearing instruments using 0.18 mum CMOS technology.

This thesis develops the design methodology for a low-voltage low-power SigmaDelta Modulator, realized using a switched op-amp technique that can be used in a hearing instrument. Switched op-amp implementation allows scaling down the design to the latest CMOS technology. A single-loop second-order SigmaDelta Modulator topology is chosen. The modulator circuit features reduced complexity, area reduction and low conversion energy. The modulator has a sampling rate of 8.2 MHz with an over-sampling ratio (OSR) of 256 to provide an audio bandwidth of 16 kHz. The modulator is implemented in a 0.18 mum digital CMOS technology with metal-to-metal sandwich structure capacitors. The modulator operates with a supply voltage of 1.8 V. The active area is 0.403 mm2. The modulator achieves a 98 dB signal-to-noise-and-distortion ratio (SNDR) and a 100 dB dynamic range (DR) at a Nyquist conversion rate of 32 kHz and consumes 1321 muW with a joule/conversion figure of merit equal to 161 x 10-12 J/s. The design methodology is developed through the extensive use of simulation tools. The behaviour simulation is carried out using Matlab/SIMULINK while circuits are simulated with Hspice using the Cadence design tools. Full-custom layout for the analog and the digital circuits is performed using the Cadence design tool. Post-processing simulation of the extracted modulator with parasitic verifies that results meet the requirements. The design has been sent to CMC for fabrication. Source: Masters Abstracts International, Volume: 43-03, page: 0947. Adviser: W. C. Miller. Thesis (M.A.Sc.)--University of Windsor (Canada), 2004

Design of a 14-bit fully differential discrete time delta-sigma modulator

Analog to digital converters play an essential role in modern mixed signal circuit design. Conventional Nyquist-rate converters require analog components that are precise and highly immune to noise and interference. In contrast, oversampling converters can be implemented using simple and high-tolerance analog components. Moreover, sampling at high frequency eliminates the need for abrupt cutoffs in the analog anti-aliasing filters. A noise shaping technique is also used in DS converters in addition to oversampling to achieve a high resolution conversion. A significant advantage of the method is that analog signals are converted using simple and high-tolerance analog circuits, usually a 1-bit comparator, and analog signal processing circuits having a precision that is usually much less than the resolution of the overall converter. In this thesis, a technique to design the discrete time DS converters for 25 kHz baseband signal bandwidth will be described. The noise shaping is achieved using a switched capacitor low-pass integrator around the 1-bit quantizer loop. A latched-type comparator is used as the quantizer of the DS converter. A second order DS modulator is implemented in a TSMC 0.35 µm CMOS technology using a 3.3 V power supply. The peak signal-to-noise ratio (SNR) simulated is 87 dB; the SNDR simulated is 82 dB which corresponds to a resolution of 14 bits. The total static power dissipation is 6.6 mW

A Simple Transistors Width Adjustment Method on CMOS Transmission Gate Switch to Reduce Hold Error of S/H Circuit

Sample and Hold (S/H) circuit is one of the most important circuits in analog and mixed signal integrated circuit. This circuit is the main block of many applications, such as switched capacitor circuit, analog to digital converter (ADC), etc. The majority of S/H circuits are implemented using MOS technology because the high input impedance of MOS devices performs excellent holding functions. Ideal characteristics of the S/H circuit are low hold error, low On-resistance and constant On-resistance in all voltage levels. There are some techniques to reduce the hold error and achieve low On-resistance. However, these techniques need additional compensation circuit. For this reason, a simple transistors width adjustment method on CMOS transmission gate (TG) switch to reduce hold error of S/H circuit without additional circuit that can be implemented in the actual design process is proposed in this paper. The basic idea of the proposed method is balancing hold error caused by N-type and P-type MOS transistor in CMOS switch that is used in S/H circuit. The performance of the proposed method is evaluated using HSPICE with 0.6 µm CMOS standard process. As a result, using 1.5 V constant input in the PMOS transistor width WP range of 3 to 35 µm the average WN/WP ratio given by this proposed method is 0.928 with the average absolute hold error is 0.427 mV and maximum absolute hold error is 0.8 mV

Low-Pass Sigma Delta Modulator for High Temperature Operation

Master'sMASTER OF ENGINEERIN

High-Speed Delta-Sigma Data Converters for Next-Generation Wireless Communication

In recent years, Continuous-time Delta-Sigma(CT-ΔΣ) analog-to-digital converters (ADCs) have been extensively investigated for their use in wireless receivers to achieve conversion bandwidths greater than 15 MHz and higher resolution of 10 to 14 bits. This dissertation investigates the current state-of-the-art high-speed single-bit and multi-bit Continuous-time Delta-Sigma modulator (CT-ΔΣM) designs and their limitations due to circuit non-idealities in achieving the performance required for next-generation wireless standards. Also, we presented complete architectural and circuit details of a high-speed single-bit and multi-bit CT-ΔΣM operating at a sampling rate of 1.25 GSps and 640 MSps respectively (the highest reported sampling rate in a 0.13 μm CMOS technology node) with measurement results. Further, we propose novel hybrid ΔΣ architecture with two-step quantizer to alleviate the bandwidth and resolution bottlenecks associated with the contemporary CT-ΔΣM topologies. To facilitate the design with the proposed architecture, a robust systematic design method is introduced to determine the loop-filter coefficients by taking into account the non-ideal integrator response, such as the finite opamp gain and the presence of multiple parasitic poles and zeros. Further, comprehensive system-level simulation is presented to analyze the effect of two-step quantizer non-idealities such as the offset and gain error in the sub-ADCs, and the current mismatch between the MSB and LSB elements in the feedback DAC. The proposed novel architecture is demonstrated by designing a high-speed wideband 4th order CT-ΔΣ modulator prototype, employing a two-step quantizer with 5-bits resolution. The proposed modulator takes advantage of the combination of a high-resolution two-step quantization technique and an excess-loop delay (ELD) compensation of more than one clock cycle to achieve lower-power consumption (28 mW), higher dynamic range (\u3e69 dB) with a wide conversion bandwidth (20 MHz), even at a lower sampling rate of 400 MHz. The proposed modulator achieves a Figure of Merit (FoM) of 340 fJ/level

Jitter-Tolerance and Blocker-Tolerance of Delta-Sigma Analog-to-Digital Converters for Saw-Less Multi-Standard Receivers

The quest for multi-standard and software-defined radio (SDR) receivers calls for high flexibility in the receiver building-blocks so that to accommodate several wireless services using a single receiver chain in mobile handsets. A potential approach to achieve flexibility in the receiver is to move the analog-to-digital converter (ADC) closer to the antenna so that to exploit the enormous advances in digital signal processing, in terms of technology scaling, speed, and programmability. In this context, continuous-time (CT) delta-sigma (ΔƩ) ADCs show up as an attractive option. CT ΔƩ ADCs have gained significant attention in wideband receivers, owing to their amenability to operate at a higher-speed with lower power consumption compared to discrete-time (DT) implementations, inherent anti-aliasing, and robustness to sampling errors in the loop quantizer. However, as the ADC moves closer to the antenna, several blockers and interferers are present at the ADC input. Thus, it is important to investigate the sensitivities of CT ΔƩ ADCs to out-of-band (OOB) blockers and find the design considerations and solutions needed to maintain the performance of CT ΔƩ modulators in presence of OOB blockers. Also, CT ΔƩ modulators suffer from a critical limitation due to their high sensitivity to the clock-jitter in the feedback digital-to-analog converter (DAC) sampling-clock. In this context, the research work presented in this thesis is divided into two main parts. First, the effects of OOB blockers on the performance of CT ΔƩ modulators are investigated and analyzed through a detailed study. A potential solution is proposed to alleviate the effect of noise folding caused by intermodulation between OOB blockers and shaped quantization noise at the modulator input stage through current-mode integration. Second, a novel DAC solution that achieves tolerance to pulse-width jitter by spectrally shaping the jitter induced errors is presented. This jitter-tolerant DAC doesn’t add extra requirements on the slew-rate or the gain-bandwidth product of the loop filter amplifiers. The proposed DAC was implemented in a 90nm CMOS prototype chip and provided a measured attenuation for in-band jitter induced noise by 26.7dB and in-band DAC noise by 5dB, compared to conventional current-steering DAC, and consumes 719µwatts from 1.3V supply

Design of RF/IF analog to digital converters for software radio communication receivers

Software radio architecture can support multiple standards by performing analogto- digital (A/D) conversion of the radio frequency (RF) signals and running reconfigurable software programs on the backend digital signal processor (DSP). A slight variation of this architecture is the software defined radio architecture in which the A/D conversion is performed on intermediate frequency (IF) signals after a single down conversion. The first part of this research deals with the design and implementation of a fourth order continuous time bandpass sigma-delta (CT BP) C based on LC filters for direct RF digitization at 950 MHz with a clock frequency of 3.8 GHz. A new ADC architecture is proposed which uses only non-return to zero feedback digital to analog converter pulses to mitigate problems associated with clock jitter. The architecture also has full control over tuning of the coefficients of the noise transfer function for obtaining the best signal to noise ratio (SNR) performance. The operation of the architecture is examined in detail and extra design parameters are introduced to ensure robust operation of the ADC. Measurement results of the ADC, implemented in IBM 0.25 µm SiGe BiCMOS technology, show SNR of 63 dB and 59 dB in signal bandwidths of 200 kHz and 1 MHz, respectively, around 950 MHz while consuming 75 mW of power from ± 1.25 V supply. The second part of this research deals with the design of a fourth order CT BP ADC based on gm-C integrators with an automatic digital tuning scheme for IF digitization at 125 MHz and a clock frequency of 500 MHz. A linearized CMOS OTA architecture combines both cross coupling and source degeneration in order to obtain good IM3 performance. A system level digital tuning scheme is proposed to tune the ADC performance over process, voltage and temperature variations. The output bit stream of the ADC is captured using an external DSP, where a software tuning algorithm tunes the ADC parameters for best SNR performance. The IF ADC was designed in TSMC 0.35 µm CMOS technology and it consumes 152 mW of power from ± 1.65 V supply

Linearization of Time-encoded ADCs Architectures for Smart MEMS Sensors in Low Power CMOS Technology

Mención Internacional en el título de doctorIn the last few years, the development of mobile technologies and machine learning applications has increased the demand of MEMS-based digital microphones. Mobile devices have several microphones enabling noise canceling, acoustic beamforming and speech recognition. With the development of machine learning applications the interest to integrate sensors with neural networks has increased. This has driven the interest to develop digital microphones in nanometer CMOS nodes where the microphone analog-front end and digital processing, potentially including neural networks, is integrated on the same chip. Traditionally, analog-to-digital converters (ADCs) in digital microphones have been implemented using high order Sigma-Delta modulators. The most common technique to implement these high order Sigma-Selta modulators is switchedcapacitor CMOS circuits. Recently, to reduce power consumption and make them more suitable for tasks that require always-on operation, such as keyword recognition, switched-capacitor circuits have been improved using inverter-based operational amplifier integrators. Alternatively, switched-capacitor based Sigma- Delta modulators have been replaced by continuous time Sigma-Delta converters. Nevertheless, in both implementations the input signal is voltage encoded across the modulator, making the integration in smaller CMOS nodes more challenging due to the reduced voltage supply. An alternative technique consists on encoding the input signal on time (or frequency) instead of voltage. This is what time-encoded converters do. Lately, time-encoding converters have gained popularity as they are more suitable to nanometer CMOS nodes than Sigma-Delta converters. Among the ones that have drawn more interest we find voltage-controlled oscillator based ADCs (VCOADCs). VCO-ADCs can be implemented using CMOS inverter based ring oscillators (RO) and digital circuitry. They also show noise-shaping properties. This makes them a very interesting alternative for implementation of ADCs in nanometer CMOS nodes. Nevertheless, two main circuit impairments are present in VCO-ADCs, and both come from the oscillator non-idealities. The first of them is the oscillator phase noise, that reduces the resolution of the ADC. The second is the non-linear tuning curve of the oscillator, that results in harmonic distortion at medium to high input amplitudes. In this thesis we analyze the use of time encoding ADCs for MEMS microphones with special focus on ring oscillator based ADCs (RO-ADCs). Firstly, we study the use of a dual-slope based SAR noise shaped quantizer (SAR-NSQ) in sigma-delta loops. This quantizer adds and extra level of noise-shaping to the modulator, improving the resolution. The quantizer is explained, and equations for the noise transfer function (NTF) of a third order sigma-delta using a second order filter and the NSQ are presented. Secondly, we move our attention to the topic of RO-ADCs. We present a high dynamic range MEMS microphone 130nm CMOS chip based on an open-loop VCO-ADC. This dissertation shows the implementation of the analog front-end that includes the oscillator and the MEMS interface, with a focus on achieving low power consumption with low noise and a high dynamic range. The digital circuitry is left to be explained by the coauthor of the chip in his dissertation. The chip achieves a 80dBA peak SNDR and 108dB dynamic range with a THD of 1.5% at 128 dBSPL with a power consumption of 438μW. After that, we analyze the use of a frequency-dependent-resistor (FDR) to implement an unsampled feedback loop around the oscillator. The objective is to reduce distortion. Additionally phase noise mitigation is achieved. A first topology including an operational amplifier to increase the loop gain is analyzed. The design is silicon proven in a 130 nm CMOS chip that achieves a 84 dBA peak SNDR with an analog power consumption of 600μW. A second topology without the operational amplifier is also analyzed. Two chips are designed with this topology. The first chip in 130 nm CMOS is a full VCO-ADC including the frequencyto- digital converter (F2D). This chip achieves a peak SNDR of 76.6 dBA with a power consumption of 482μW. The second chip includes only the oscillator and is implemented in 55nm CMOS. The peak SNDR is 78.15 dBA and the analog power consumption is 153μW. To finish this thesis, two circuits that use an FDR with a ring oscillator are presented. The first is a capacity-to-digital converter (CDC). The second is a filter made with an FDR and an oscillator intended for voice activity detection tasks (VAD).En los últimos años, el desarrollo de las tecnologías móviles y las aplicaciones de machine-learning han aumentado la demanda de micrófonos digitales basados en MEMS. Los dipositivos móviles tienen varios micrófonos que permiten la cancelación de ruido, el beamforming o conformación de haces y el reconocimiento de voz. Con el desarrollo de aplicaciones de aprendizaje automático, el interés por integrar sensores con redes neuronales ha aumentado. Esto ha impulsado el interés por desarrollar micrófonos digitales en nodos CMOS nanométricos donde el front-end analógico y el procesamiento digital del micrófono, que puede incluir redes neuronales, está integrado en el mismo chip. Tradicionalmente, los convertidores analógicos-digitales (ADC) en micrófonos digitales han sido implementados utilizando moduladores Sigma-Delta de orden elevado. La técnica más común para implementar estos moduladores Sigma- Delta es el uso de circuitos CMOS de capacidades conmutadas. Recientemente, para reducir el consumo de potencia y hacerlos más adecuados para las tareas que requieren una operación continua, como el reconocimiento de palabras clave, los convertidores Sigma-Delta de capacidades conmutadas has sido mejorados con el uso de integradores implementados con amplificadores operacionales basados en inversores CMOS. Alternativamente, los Sigma-Delta de capacidades conmutadas han sido reemplazados por moduladores en tiempo continuo. No obstante, en ambas implementaciones, la señal de entrada es codificada en voltaje durante el proceso de conversión, lo que hace que la integración en nodos CMOS más pequeños sea complicada debido a la menor tensión de alimentación. Una técnica alternativa consiste en codificar la señal de entrada en tiempo (o frecuencia) en lugar de tensión. Esto es lo que hacen los convertidores de codificación temporal. Recientemente, los convertidores de codificación temporal han ganado popularidad ya que son más adecuados para nodos CMOS nanométricos que los convertidores Sigma-Delta. Entre los que más interés han despertado encontramos los ADCs basados en osciladores controlados por tensión (VCO-ADC). Los VCO-ADC se pueden implementar usando osciladores en anillo (RO) implementados con inversores CMOS y circuitos digitales. Esta familia de convertidores también tiene conformado de ruido. Esto los convierte en una alternativa muy interesante para la implementación de convertidores en nodos CMOS nanométricos. Sin embargo, dos problemas principales están presentes en este tipo de ADCs debidos ambos a las no idealidades del oscilador. El primero de los problemas es la presencia de ruido de fase en el oscilador, lo que reduce la resolución del ADC. El segundo es la curva de conversion voltaje-frecuencia no lineal del oscilador, lo que causa distorsión a amplitudes medias y altas. En esta tesis analizamos el uso de ADCs de codificación temporal para micrófonos MEMS, con especial interés en ADCS basados en osciladores de anillo (RO-ADC). En primer lugar, estudiamos el uso de un cuantificador SAR con conformado de ruido (SAR-NSQ) en moduladores Sigma-Delta. Este cuantificador agrega un orden adicional de conformado de ruido al modulador, mejorando la resolución. En este documento se explica el cuantificador y obtienen las ecuaciones para la función de transferencia de ruido (NTF) de un sigma-delta de tercer orden usando un filtro de segundo orden y el NSQ. En segundo lugar, dirigimos nuestra atención al tema de los RO-ADC. Presentamos el chip de un micrófono MEMS de alto rango dinámico en CMOS de 130 nm basado en un VCO-ADC de bucle abierto. En esta tesis se explica la implementación del front-end analógico que incluye el oscilador y la interfaz con el MEMS. Esta implementación se ha llevado a cabo con el objetivo de lograr un bajo consumo de potencia, un bajo nivel de ruido y un alto rango dinámico. La descripción del back-end digital se deja para la tesis del couator del chip. La SNDR de pico del chip es de 80dBA y el rango dinámico de 108dB con una THD de 1,5% a 128 dBSPL y un consumo de potencia de 438μW. Finalmente, se analiza el uso de una resistencia dependiente de frecuencia (FDR) para implementar un bucle de realimentación no muestreado alrededor del oscilador. El objetivo es reducir la distorsión. Además, también se logra la mitigación del ruido de fase del oscilador. Se analyza una primera topologia de realimentación incluyendo un amplificador operacional para incrementar la ganancia de bucle. Este diseño se prueba en silicio en un chip CMOS de 130nm que logra un pico de SNDR de 84 dBA con un consumo de potencia de 600μW en la parte analógica. Seguidamente, se analiza una segunda topología sin el amplificador operacional. Se fabrican y miden dos chips diseñados con esta topologia. El primero de ellos en CMOS de 130 nm es un VCO-ADC completo que incluye el convertidor de frecuencia a digital (F2D). Este chip alcanza un pico SNDR de 76,6 dBA con un consumo de potencia de 482μW. El segundo incluye solo el oscilador y está implementado en CMOS de 55nm. El pico SNDR es 78.15 dBA y el el consumo de potencia analógica es de 153μW. Para cerrar esta tesis, se presentan dos circuitos que usan la FDR con un oscilador en anillo. El primero es un convertidor de capacidad a digital (CDC). El segundo es un filtro realizado con una FDR y un oscilador, enfocado a tareas de detección de voz (VAD).Programa de Doctorado en Ingeniería Eléctrica, Electrónica y Automática por la Universidad Carlos III de MadridPresidente: Antonio Jesús Torralba Silgado.- Secretaria: María Luisa López Vallejo.- Vocal: Pieter Rombout