Adaptive multibeam phased array design for a Spacelab experiment

The parametric tradeoff analyses and design for an Adaptive Multibeam Phased Array (AMPA) for a Spacelab experiment are described. This AMPA Experiment System was designed with particular emphasis to maximize channel capacity and minimize implementation and cost impacts for future austere maritime and aeronautical users, operating with a low gain hemispherical coverage antenna element, low effective radiated power, and low antenna gain-to-system noise temperature ratio

Ultra-thin silicon technology for tactile sensors

In order to meet the requirements of high performance flexible electronics in fast growing portable consumer electronics, robotics and new fields such as Internet of Things (IoT), new techniques such as electronics based on nanostructures, molecular electronics and quantum electronics have emerged recently. The importance given to the silicon chips with thickness below 50 μm is particularly interesting as this will advance the 3D IC technology as well as open new directions for high-performance flexible electronics. This doctoral thesis focusses on the development of silicon–based ultra-thin chip (UTC) for the next generation flexible electronics. UTCs, on one hand can provide processing speed at par with state-of-the-art CMOS technology, and on the other provide the mechanical flexibility to allow smooth integration on flexible substrates. These development form the motivation behind the work presented in this thesis. As the thickness of any silicon piece decreases, the flexural rigidity decreases. The flexural rigidity is defined as the force couple required to bend a non-rigid structure to a unit curvature, and therefore the flexibility increases. The new approach presented in this thesis for achieving thin silicon exploits existing and well-established silicon infrastructure, process, and design modules. The thin chips of thicknesses ranging between 15 μm – 30 μm, were obtained from processed bulk wafer using anisotropic chemical etching. The thesis also presents thin wafer transfer using two-step transfer printing approach, packaging by lamination or encapsulation between two flexible layerand methods to get the electrical connections out of the chip. The devices realised on the wafer as part of front-end processing, consisted capacitors and transistors, have been tested to analyse the effect of bending on the electrical characteristics. The capacitance of metal-oxide-semiconductor (MOS) capacitors increases by ~5% during bending and similar shift is observed in flatband and threshold voltages. Similarly, the carrier mobility in the channel region of metal-oxide-semiconductor field effect transistor (MOSFET) increases by 9% in tensile bending and decreases by ~5% in compressive bending. The analytical model developed to capture the effect of banding on device performance showed close matching with the experimental results. In order to employ these devices as tactile sensors, two types of piezoelectric materials are investigated, and used in extended gate configuration with the MOSFET. Firstly, a nanocomposite of Poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE) and barium titanate (BT) was developed. The composite, due to opposite piezo and pyroelectric coefficients of constituents, was able to suppress the sensitivity towards temperature when force and temperature varied together, The sensitivity to force in extended gate configuration was measured to be 630 mV/N, and sensitivity to temperature was 6.57 mV/oC, when it was varied during force application. The process optimisation for sputtering piezoelectric Aluminium Nitride (AlN) was also carried out with many parametric variation. AlN does not require poling to exhibit piezoelectricity and therefore offers an attractive alternative for the piezoelectric layer used in devices such as POSFET (where piezoelectric material is directly deposited over the gate area of MOSFET). The optimised process gave highly orientated columnar structure AlN with piezoelectric coefficient of 5.9 pC/N and when connected in extended gate configuration, a sensitivity (normalised change in drain current per unit force) of 2.65 N-1 was obtained

Development of a Waveform Sampling ASIC with Femtosecond Timing for a Low Occupancy Vertex Detector.

Ph.D. Thesis. University of Hawaiʻi at Mānoa 2018

Enhancement of the Dynamic Performance of Electrolyte-Gated Transistors: Toward Fast-Switching, Low-Operating Voltage Printed Electronics

University of Minnesota Ph.D. dissertation. June 2019. Major: Chemistry. Advisor: Daniel Frisbie. 1 computer file (PDF); ix, 148 pages.A transistor is an electrical circuit element which acts as a switch, can tune the current in an electrical circuit, and can amplify input signals. Fast switching with low-operating voltage and high amplification are desired characteristics for transistors but are not readily achieved by printed electronics. Electrolyte-gated transistors (EGTs) are a specific class of transistors with an electrolyte as the gate dielectric. Using electrolyte as the gate dielectric enables low-operating voltage, high amplification (gain), and relaxed fabrication requirements. Electrolytes have a huge capacitance which is thickness independent thanks to the formation of electrical double layers (EDL) at the interfaces of the electrolyte with the electrodes. Ion gel is a type of electrolyte consisting of an ionic liquid and a triblock copolymer. The polymer is responsible for providing mechanical integrity, whereas the ionic liquid is responsible for the gating mechanism with great electrical, physical, chemical, and electrochemical properties. Ion gels pave the way for miniaturizing EGTs and their use in printed electronics. Despite all the promising properties of printed EGTs including low-operating voltage, ease of printing, flexibility, and low-toxicity, fast EGTs have not yet been demonstrated. Similarly, higher EGT gain is also required to improve the sensitivity and computational power of devices. In this thesis, the EGT working principles have been investigated, as well as the effects of EGT architectures, materials, components, printing resolution, and precision on the EGT operating speed and gain. New architectures have been designed to produce fast and high-performance EGTs. Modification of EGT architectures and components enabled us to achieve 5 MHz operation with an order of magnitude increase in gain and amplification. In order to fabricate different architectures, a variety of techniques including inkjet, aerosol-jet, and screen printing have been employed. Screen-printed, UV-cured ion gels with a line width resolution of 10 µm have been demonstrated. In conclusion, in this thesis, the performance of printed ion gel-based electrolyte-gated transistors has been investigated and improved by relating the device dynamic and static characteristics to its material components and architecture

A Field Programmable Gate Array Architecture for Two-Dimensional Partial Reconfiguration

Reconfigurable machines can accelerate many applications by adapting to their needs through hardware reconfiguration. Partial reconfiguration allows the reconfiguration of a portion of a chip while the rest of the chip is busy working on tasks. Operating system models have been proposed for partially reconfigurable machines to handle the scheduling and placement of tasks. They are called OS4RC in this dissertation. The main goal of this research is to address some problems that come from the gap between OS4RC and existing chip architectures and the gap between OS4RC models and practical applications. Some existing OS4RC models are based on an impractical assumption that there is no data exchange channel between IP (Intellectual Property) circuits residing on a Field Programmable Gate Array (FPGA) chip and between an IP circuit and FPGA I/O pins. For models that do not have such an assumption, their inter-IP communication channels have severe drawbacks. Those channels do not work well with 2-D partial reconfiguration. They are not suitable for intensive data stream processing. And frequently they are very complicated to design and very expensive. To address these problems, a new chip architecture that can better support inter-IP and IP-I/O communication is proposed and a corresponding OS4RC kernel is then specified. The proposed FPGA architecture is based on an array of clusters of configurable logic blocks, with each cluster serving as a partial reconfiguration unit, and a mesh of segmented buses that provides inter-IP and IP-I/O communication channels. The proposed OS4RC kernel takes care of the scheduling, placement, and routing of circuits under the constraints of the proposed architecture. Features of the new architecture in turns reduce the kernel execution times and enable the runtime scheduling, placement and routing. The area cost and the configuration memory size of the new chip architecture are calculated and analyzed. And the efficiency of the OS4RC kernel is evaluated via simulation using three different task models

Ultra-thin and flexible CMOS technology: ISFET-based microsystem for biomedical applications

A new paradigm of silicon technology is the ultra-thin chip (UTC) technology and the emerging applications. Very thin integrated circuits (ICs) with through-silicon vias (TSVs) will allow the stacking and interconnection of multiple dies in a compact format allowing a migration towards three-dimensional ICs (3D-ICs). Also, extremely thin and therefore mechanically bendable silicon chips in conjunction with the emerging thin-film and organic semiconductor technologies will enhance the performance and functionality of large-area flexible electronic systems. However, UTC technology requires special attention related to the circuit design, fabrication, dicing and handling of ultra-thin chips as they have different physical properties compared to their bulky counterparts. Also, transistors and other active devices on UTCs experiencing variable bending stresses will suffer from the piezoresistive effect of silicon substrate which results in a shift of their operating point and therefore, an additional aspect should be considered during circuit design. This thesis tries to address some of these challenges related to UTC technology by focusing initially on modelling of transistors on mechanically bendable Si-UTCs. The developed behavioural models are a combination of mathematical equations and extracted parameters from BSIM4 and BSIM6 modified by a set of equations describing the bending-induced stresses on silicon. The transistor models are written in Verilog-A and compiled in Cadence Virtuoso environment where they were simulated at different bending conditions. To complement this, the verification of these models through experimental results is also presented. Two chips were designed using a 180 nm CMOS technology. The first chip includes nMOS and pMOS transistors with fixed channel width and two different channel lengths and two different channel orientations (0° and 90°) with respect to the wafer crystal orientation. The second chip includes inverter logic gates with different transistor sizes and orientations, as in the previous chip. Both chips were thinned down to ∼20m using dicing-before-grinding (DBG) prior to electrical characterisation at different bending conditions. Furthermore, this thesis presents the first reported fully integrated CMOS-based ISFET microsystem on UTC technology. The design of the integrated CMOS-based ISFET chip with 512 integrated on-chip ISFET sensors along with their read-out and digitisation scheme is presented. The integrated circuits (ICs) are thinned down to ∼30m and the bulky, as well as thinned ICs, are electrically and electrochemically characterised. Also, the thesis presents the first reported mechanically bendable CMOS-based ISFET device demonstrating that mechanical deformation of the die can result in drift compensation through the exploitation of the piezoresistive nature of silicon. Finally, this thesis presents the studies towards the development of on-chip reference electrodes and biodegradable and ultra-thin biosensors for the detection of neurotransmitters such as dopamine and serotonin

Miniature high dynamic range time-resolved CMOS SPAD image sensors

Since their integration in complementary metal oxide (CMOS) semiconductor technology in 2003, single photon avalanche diodes (SPADs) have inspired a new era of low cost high integration quantum-level image sensors. Their unique feature of discerning single photon detections, their ability to retain temporal information on every collected photon and their amenability to high speed image sensor architectures makes them prime candidates for low light and time-resolved applications. From the biomedical field of fluorescence lifetime imaging microscopy (FLIM) to extreme physical phenomena such as quantum entanglement, all the way to time of flight (ToF) consumer applications such as gesture recognition and more recently automotive light detection and ranging (LIDAR), huge steps in detector and sensor architectures have been made to address the design challenges of pixel sensitivity and functionality trade-off, scalability and handling of large data rates. The goal of this research is to explore the hypothesis that given the state of the art CMOS nodes and fabrication technologies, it is possible to design miniature SPAD image sensors for time-resolved applications with a small pixel pitch while maintaining both sensitivity and built -in functionality. Three key approaches are pursued to that purpose: leveraging the innate area reduction of logic gates and finer design rules of advanced CMOS nodes to balance the pixel’s fill factor and processing capability, smarter pixel designs with configurable functionality and novel system architectures that lift the processing burden off the pixel array and mediate data flow. Two pathfinder SPAD image sensors were designed and fabricated: a 96 × 40 planar front side illuminated (FSI) sensor with 66% fill factor at 8.25μm pixel pitch in an industrialised 40nm process and a 128 × 120 3D-stacked backside illuminated (BSI) sensor with 45% fill factor at 7.83μm pixel pitch. Both designs rely on a digital, configurable, 12-bit ripple counter pixel allowing for time-gated shot noise limited photon counting. The FSI sensor was operated as a quanta image sensor (QIS) achieving an extended dynamic range in excess of 100dB, utilising triple exposure windows and in-pixel data compression which reduces data rates by a factor of 3.75×. The stacked sensor is the first demonstration of a wafer scale SPAD imaging array with a 1-to-1 hybrid bond connection. Characterisation results of the detector and sensor performance are presented. Two other time-resolved 3D-stacked BSI SPAD image sensor architectures are proposed. The first is a fully integrated 5-wire interface system on chip (SoC), with built-in power management and off-focal plane data processing and storage for high dynamic range as well as autonomous video rate operation. Preliminary images and bring-up results of the fabricated 2mm² sensor are shown. The second is a highly configurable design capable of simultaneous multi-bit oversampled imaging and programmable region of interest (ROI) time correlated single photon counting (TCSPC) with on-chip histogram generation. The 6.48μm pitch array has been submitted for fabrication. In-depth design details of both architectures are discussed

Parenting in a warming world: thermoregulatory responses to heat stress in an endangered seabird

This is the final version. Available on open access from Oxford University Press via the DOI in this recordThe frequency of extreme weather events, including heat waves, is increasing with climate change. The thermoregulatory demands resulting from hotter weather can have catastrophic impacts on animals, leading to mass mortalities. Although less dramatic, animals also experience physiological costs below, but approaching, critical temperature thresholds. These costs may be particularly constraining during reproduction, when parents must balance thermoregulation against breeding activities. Such challenges should be acute among seabirds, which often nest in locations exposed to high solar radiation and predation risk. The globally endangered bank cormorant Phalacrocorax neglectus breeds in southern Africa in the winter, giving little scope for poleward or phenological shifts in the face of increasing temperatures. Physiological studies of endangered species sensitive to human disturbance, like the bank cormorant, are challenging, because individuals cannot be captured for experimental research. Using a novel, non-invasive, videographic approach, we investigated the thermoregulatory responses of this seabird across a range of environmental temperatures at three nesting colonies. The time birds spent gular fluttering, a behaviour enhancing evaporative heat loss, increased with temperature. Crouching or standing birds spent considerably less time gular fluttering than birds sitting on nests (ca 30% less at 22°C), showing that postural adjustments mediate exposure to heat stress and enhance water conservation. Crouching or standing, however, increases the vulnerability of eggs and chicks to suboptimal temperatures and/or expose nest contents to predation, suggesting that parents may trade-off thermoregulatory demands against offspring survival. We modelled thermoregulatory responses under future climate scenarios and found that nest-bound bank cormorants will gular flutter almost continuously for several hours a day by 2100. The associated increase in water loss may lead to dehydration, forcing birds to prioritize survival over breeding, a trade-off that would ultimately deteriorate the conservation status of this species.National Research FoundationDST-NRF Centre of Excellence fund at the FitzPatrick Institute of African OrnithologyLeiden Conservation Foundatio

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects