Blaabjerg, Frede

Katsuki, A.

Kazimierczuk, M. K.

Kurokawa, F.

Lotfi, A.

Sekiya, H.

English

The design and analysis of a new operation-mode of the class-DE power amplifier (PA) using two MOSFETs with the non-equal grading coefficient is introduced. The PA uses the optimum shunt capacitance for each MOSFET to achieve zero voltage switching (ZVS) condition and wide range for the load-resistance point of view. As compared with the conventional class-DE PA, this configuration has low value of the series inductance that is reduced the power dissipation. A design procedure with intuitive curves is obtained that are implemented using a different grading coefficient for two MOSFETs. These criteria prepared an effective approach regardless of the fixed shunt capacitance for achieving ZVS condition. The desired operation of the class-DE PA is guaranteed by converging of design parameters and required output power. Moreover, non-similar switches provide reduced switch power dissipations and the number of the driving circuit PA. The simulation and experiment results are approved by implementing the outlined theoretical relationships for a fabricated class-DE PA at 4-MHz switching frequency and obtained 12.1-W output power.</p

Analysis of Class-DE PA Using MOSFET Devices With Non-Equally Grading Coefficient

https://vbn.aau.dk/ws/files/308351351/Analysis_of_Class_DE_PA_Using_MOSFET_Devices_With_Non_Equally_Grading_Coefficient.pdf

Analysis of Class-DE PA Using MOSFET Devices With Non-Equally Grading Coefficient

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