403 research outputs found
Low voltage high bandwidth self-biased high swing cascode current mirror
A low voltage self-biased high swing cascode current mirror (SHCCM) with improved bandwidth has been proposed. The recently reported SHCCM architecture use the bulk-driven quasi-floating gate (BDQFG) MOS transistors to enhance the effective transconductance which improves the current mirror input resistance and bandwidth range over the same architecture realized using bulk-driven MOS transistors. To further improve the bandwidth the proposed BDQFG based SHCCM uses two resistances which makes the current mirror frequency response free from input capacitors and also reduces the parasitic capacitance effect which results in increased bandwidth with an advantage of having no degradation in other performance parameters of current mirror. The proposed current mirror operates well for input current range from 0 to 200 ΌA with good linearity and shows the bandwidth of 298 MHz (i.e., 1.6 times over prior reported BDQFG based SHCCM). The observed input and output resistance is 306 Ω and 165 kΩ, respectively. Further, the THD analysis is carried to prove the robustness of proposed current mirror. The complete analysis is performed on UMC 0.18 Όm technology using HSpice
Design methodology for general enhancement of a single-stage self-compensated folded-cascode operational transconductance amplifiers in 65 nm CMOS process
The problems resulting from the use of nano-MOSFETs in the design of operational trans-conductance amplifiers (OTAs) lead to an urgent need for new design techniques to produce high-performance metrics OTAs suitable for very high-frequency applications. In this paper, the enhancement techniques and design equations for the proposed single-stage folded-cascode operational trans-conductance amplifiers (FCOTA) are presented for the enhancement of its various performance metrics. The proposed single-stage FCOTA adopts the folded-cascode (FC) current sources with cascode current mirrors (CCMs) load. Using 65 nm complementary metal-oxide semiconductor (CMOS) process from predictive technology model (PTM), the HSPICE2019-based simulation results show that the designed single-stage FCOTA can achieve a high open-loop differential-mode DC voltage gain of 65.64 dB, very high unity-gain bandwidth of 263 MHz, very high stability with phase-margin of 73°, low power dissipation of 0.97 mW, very low DC input-offset voltage of 0.14 uV, high swing-output voltages from â0.97 to 0.91 V, very low equivalent input-referred noise of 15.8 nV/Hz, very high common-mode rejection ratio of 190.64 dB, very high positive/negative slew-rates of 157.5/58.3 Vâus, very fast settling-time of 5.1 ns, high extension input common-mode range voltages from â0.44to 1 V, and high positive/negative power-supply rejection ratios of 75.5/68.8 dB. The values of the small/large-signal figures-of-merits (s) are the highest when compared to other reported FCOTAs in the literature
Silicon-on-Insulator Power Management Integrated Circuit for Thin-Film Solid-State Lithium-Ion Micro-Batteries
This thesis presents the design and implementation of a power management integrated circuit (IC) that is capable of both current and voltage charging thin-film, solid-state, lithium-ion micro-batteries. The power management system has been fabricated using a single-poly, 0.35-ĂŹm, partially-depleted, silicon-on-insulator process (PD-SOI). The system contains a temperature stable current charger (current generator and a 4-bit current-mode DAC), a regulated voltage supply (voltage amplifier), and a voltage monitoring circuit (2-bit flash ADC). Experimental results of the first version of the power management system show proper functionality was obtained. The current charger produced a 2% worst-case variation in output current over the temperature range 0â100°C. The regulated voltage output was measured to be 4.4 V and the digital outputs of the flash ADC transitioned at 3.45 and 4.76 V
Analog integrated circuit design in ultra-thin oxide CMOS technologies with significant direct tunneling-induced gate current
The ability to do mixed-signal IC design in a CMOS technology has been a driving force for manufacturing personal mobile electronic products such as cellular phones, digital audio players, and personal digital assistants. As CMOS has moved to ultra-thin oxide technologies, where oxide thicknesses are less than 3 nm, this type of design has been threatened by the direct tunneling of carriers though the gate oxide. This type of tunneling, which increases exponentially with decreasing oxide thickness, is a source of MOSFET gate current. Its existence invalidates the simplifying design assumption of infinite gate resistance. Its problems are typically avoided by switching to a high-&kappa/metal gate technology or by including a second thick(er) oxide transistor. Both of these solutions come with undesirable increases in cost due to extra mask and processing steps. Furthermore, digital circuit solutions to the problems created by direct tunneling are available, while analog circuit solutions are not. Therefore, it is desirable that analog circuit solutions exist that allow the design of mixed-signal circuits with ultra-thin oxide MOSFETs. This work presents a methodology that develops these solutions as a less costly alternative to high-&kappa/metal gate technologies or thick(er) oxide transistors. The solutions focus on transistor sizing, DC biasing, and the design of current mirrors and differential amplifiers. They attempt to minimize, balance, and cancel the negative effects of direct tunneling on analog design in traditional (non-high-&kappa/metal gate) ultra-thin oxide CMOS technologies. They require only ultra-thin oxide devices and are investigated in a 65 nm CMOS technology with a nominal VDD of 1 V and a physical oxide thickness of 1.25 nm. A sub-1 V bandgap voltage reference that requires only ultra-thin oxide MOSFETs is presented (TC = 251.0 ppm/°C). It utilizes the developed methodology and illustrates that it is capable of suppressing the negative effects of direct tunneling. Its performance is compared to a thick-oxide voltage reference as a means of demonstrating that ultra-thin oxide MOSFETs can be used to build the analog component of a mixed-signal system
Circuits for Analog Signal Processing Employing Unconventional Active Elements
DisertaÄnĂ prĂĄce se zabĂœvĂĄ zavĂĄdÄnĂm novĂœch struktur modernĂch aktivnĂch prvkĆŻ pracujĂcĂch v napÄĆ„ovĂ©m, proudovĂ©m a smĂĆĄenĂ©m reĆŸimu. FunkÄnost a chovĂĄnĂ tÄchto prvkĆŻ byly ovÄĆeny prostĆednictvĂm SPICE simulacĂ. V tĂ©to prĂĄci je zahrnuta Ćada simulacĂ, kterĂ© dokazujĂ pĆesnost a dobrĂ© vlastnosti tÄchto prvkĆŻ, pĆiÄemĆŸ velkĂœ dĆŻraz byl kladen na to, aby tyto prvky byly schopny pracovat pĆi nĂzkĂ©m napĂĄjecĂm napÄtĂ, jelikoĆŸ poptĂĄvka po pĆenosnĂœch elektronickĂœch zaĆĂzenĂch a implantabilnĂch zdravotnickĂœch pĆĂstrojĂch stĂĄle roste. Tyto pĆĂstroje jsou napĂĄjeny bateriemi a k tomu, aby byla prodlouĆŸena jejich ĆŸivotnost, trend navrhovĂĄnĂ analogovĂœch obvodĆŻ smÄĆuje k stĂĄle vÄtĆĄĂmu sniĆŸovĂĄnĂ spotĆeby a napĂĄjecĂho napÄtĂ. HlavnĂm pĆĂnosem tĂ©to prĂĄce je nĂĄvrh novĂœch CMOS struktur: CCII (Current Conveyor Second Generation) na zĂĄkladÄ BD (Bulk Driven), FG (Floating Gate) a QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) na zĂĄkladÄ FG, transkonduktor na zĂĄkladÄ novĂ© techniky BD_QFG (Bulk Driven_Quasi Floating Gate), CCCDBA (Current Controlled Current Differencing Buffered Amplifier) na zĂĄkladÄ GD (Gate Driven), VDBA (Voltage Differencing Buffered Amplifier) na zĂĄkladÄ GD a DBeTA (Differential_Input Buffered and External Transconductance Amplifier) na zĂĄkladÄ BD. DĂĄle je uvedeno nÄkolik zajĂmavĂœch aplikacĂ uĆŸĂvajĂcĂch vĂœĆĄe jmenovanĂ© prvky. ZĂskanĂ© vĂœsledky simulacĂ odpovĂdajĂ teoretickĂœm pĆedpokladĆŻm.The dissertation thesis deals with implementing new structures of modern active elements working in voltage_, current_, and mixed mode. The functionality and behavior of these elements have been verified by SPICE simulation. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of those elements. However, a big attention to implement active elements by utilizing LV LP (Low Voltage Low Power) techniques is given in this thesis. This attention came from the fact that growing demand of portable electronic equipments and implantable medical devices are pushing the development towards LV LP integrated circuits because of their influence on batteries lifetime. More specifically, the main contribution of this thesis is to implement new CMOS structures of: CCII (Current Conveyor Second Generation) based on BD (Bulk Driven), FG (Floating Gate) and QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) based on FG; Transconductor based on new technique of BD_QFG (Bulk Driven_Quasi Floating Gate); CCCDBA (Current Controlled Current Differencing Buffered Amplifier) based on conventional GD (Gate Driven); VDBA (Voltage Differencing Buffered Amplifier) based on GD. Moreover, defining new active element i.e. DBeTA (Differential_Input Buffered and External Transconductance Amplifier) based on BD is also one of the main contributions of this thesis. To confirm the workability and attractive properties of the proposed circuits many applications were exhibited. The given results agree well with the theoretical anticipation.
System-on-Package Low-Power Telemetry and Signal Conditioning unit for Biomedical Applications
Recent advancements in healthcare monitoring equipments and wireless communication technologies have led to the integration of specialized medical technology with the pervasive wireless networks. Intensive research has been focused on the development of medical wireless networks (MWN) for telemedicine and smart home care services. Wireless technology also shows potential promises in surgical applications. Unlike conventional surgery, an expert surgeon can perform the surgery from a remote location using robot manipulators and monitor the status of the real surgery through wireless communication link. To provide this service each surgical tool must be facilitated with smart electronics to accrue data and transmit the data successfully to the monitoring unit through wireless network.
To avoid unwieldy wires between the smart surgical tool and monitoring units and to reap the benefit of excellent features of wireless technology, each smart surgical tool must incorporate a low-power wireless transmitter. Low-power transmitter with high efficiency is essential for short range wireless communication. Unlike conventional transmitters used for cellular communication, injection-locked transmitter shows greater promises in short range wireless communication. The core block of an injection-locked transmitter is an injection-locked oscillator. Therefore, this research work is directed towards the development of a low-voltage low-power injection-locked oscillator which will facilitate the development of a low-power injection-locked transmitter for MWN applications.
Structure of oscillator and types of injection are two crucial design criteria for low-power injection-locked oscillator design. Compared to other injection structures, body-level injection offers low-voltage and low-power operation. Again, conventional NMOS/PMOS-only cross-coupled LC oscillator can work with low supply voltage but the power consumption is relatively high. To overcome this problem, a self-cascode LC oscillator structure has been used which provides both low-voltage and low-power operation. Body terminal coupling is used with this structure to achieve injection-locking. Simulation results show that the self-cascode structure consumes much less power compared to that of the conventional structure for the same output swing while exhibiting better phase noise performance. Usage of PMOS devices and body bias control not only reduces the flicker noise and power consumption but also eliminates the requirements of expensive fabrication process for body terminal access
Low Voltage Low Power Analogue Circuits Design
DisertaÄnĂ prĂĄce je zamÄĆena na vĂœzkum nejbÄĆŸnÄjĆĄĂch metod, kterĂ© se vyuĆŸĂvajĂ pĆi nĂĄvrhu analogovĂœch obvodĆŻ s vyuĆŸitĂ nĂzkonapÄĆ„ovĂœch (LV) a nĂzkopĆĂkonovĂœch (LP) struktur. Tyto LV LP obvody mohou bĂœt vytvoĆeny dĂky vyspÄlĂœm technologiĂm nebo takĂ© vyuĆŸitĂm pokroÄilĂœch technik nĂĄvrhu. DisertaÄnĂ prĂĄce se zabĂœvĂĄ prĂĄvÄ pokroÄilĂœmi technikami nĂĄvrhu, pĆedevĆĄĂm pak nekonvenÄnĂmi. Mezi tyto techniky patĆĂ vyuĆŸitĂ prvkĆŻ s ĆĂzenĂœm substrĂĄtem (bulk-driven - BD), s plovoucĂm hradlem (floating-gate - FG), s kvazi plovoucĂm hradlem (quasi-floating-gate - QFG), s ĆĂzenĂœm substrĂĄtem s plovoucĂm hradlem (bulk-driven floating-gate - BD-FG) a s ĆĂzenĂœm substrĂĄtem s kvazi plovoucĂm hradlem (quasi-floating-gate - BD-QFG). PrĂĄce je takĂ© orientovĂĄna na moĆŸnĂ© zpĆŻsoby implementace znĂĄmĂœch a modernĂch aktivnĂch prvkĆŻ pracujĂcĂch v napÄĆ„ovĂ©m, proudovĂ©m nebo mix-mĂłdu. Mezi tyto prvky lze zaÄlenit zesilovaÄe typu OTA (operational transconductance amplifier), CCII (second generation current conveyor), FB-CCII (fully-differential second generation current conveyor), FB-DDA (fully-balanced differential difference amplifier), VDTA (voltage differencing transconductance amplifier), CC-CDBA (current-controlled current differencing buffered amplifier) a CFOA (current feedback operational amplifier). Za ĂșÄelem potvrzenĂ funkÄnosti a chovĂĄnĂ vĂœĆĄe zmĂnÄnĂœch struktur a prvkĆŻ byly vytvoĆeny pĆĂklady aplikacĂ, kterĂ© simulujĂ usmÄrĆovacĂ a induktanÄnĂ vlastnosti diody, dĂĄle pak filtry dolnĂ propusti, pĂĄsmovĂ© propusti a takĂ© univerzĂĄlnĂ filtry. VĆĄechny aktivnĂ prvky a pĆĂklady aplikacĂ byly ovÄĆeny pomocĂ PSpice simulacĂ s vyuĆŸitĂm parametrĆŻ technologie 0,18 m TSMC CMOS. Pro ilustraci pĆesnĂ©ho a ĂșÄinnĂ©ho chovĂĄnĂ struktur je v disertaÄnĂ prĂĄci zahrnuto velkĂ© mnoĆŸstvĂ simulaÄnĂch vĂœsledkĆŻ.The dissertation thesis is aiming at examining the most common methods adopted by analog circuits' designers in order to achieve low voltage (LV) low power (LP) configurations. The capability of LV LP operation could be achieved either by developed technologies or by design techniques. The thesis is concentrating upon design techniques, especially the nonâconventional ones which are bulkâdriven (BD), floatingâgate (FG), quasiâfloatingâgate (QFG), bulkâdriven floatingâgate (BDâFG) and bulkâdriven quasiâfloatingâgate (BDâQFG) techniques. The thesis also looks at ways of implementing structures of wellâknown and modern active elements operating in voltageâ, currentâ, and mixedâmode such as operational transconductance amplifier (OTA), second generation current conveyor (CCII), fullyâdifferential second generation current conveyor (FBâCCII), fullyâbalanced differential difference amplifier (FBâDDA), voltage differencing transconductance amplifier (VDTA), currentâcontrolled current differencing buffered amplifier (CCâCDBA) and current feedback operational amplifier (CFOA). In order to confirm the functionality and behavior of these configurations and elements, they have been utilized in application examples such as diodeâless rectifier and inductance simulations, as well as lowâpass, bandâpass and universal filters. All active elements and application examples have been verified by PSpice simulator using the 0.18 m TSMC CMOS parameters. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of structures.
[Delta] IDDQ testing of a CMOS 12-bit charge scaling digital-to-analog converter
This work presents design, implementation and test of a built-in current sensor (BICS) for âIDDQ testing of a CMOS 12-bit charge scaling digital-to-analog converter (DAC). The sensor uses power discharge method for the fault detection. The sensor operates in two modes, the test mode and the normal mode. In the test mode, the BICS is connected to the circuit under test (CUT) which is DAC and detects abnormal currents caused by manufacturing defects. In the normal mode, BICS is isolated from the CUT. The BICS is integrated with the DAC and is implemented in a 0.5 ÎŒm n-well CMOS technology. The DAC uses charge scaling method for the design and a low voltage (0 to 2.5 V) folded cascode op-amp. The built-in current sensor (BICS) has a resolution of 0.5 ÎŒA. Faults have been introduced into DAC using fault injection transistors (FITs). The method of âIDDQ testing has been verified both from simulation and experimental measurements
A 0.3 V rail-to-rail ultra-low-power OTA with improved bandwidth and slew rate
In this paper, we present a novel operational transconductance amplifier (OTA) topology
based on a dual-path body-driven input stage that exploits a body-driven current mirror-active
load and targets ultra-low-power (ULP) and ultra-low-voltage (ULV) applications, such as IoT or
biomedical devices. The proposed OTA exhibits only one high-impedance node, and can therefore
be compensated at the output stage, thus not requiring Miller compensation. The input stage
ensures rail-to-rail input common-mode range, whereas the gate-driven output stage ensures both
a high open-loop gain and an enhanced slew rate. The proposed amplifier was designed in an
STMicroelectronics 130 nm CMOS process with a nominal supply voltage of only 0.3 V, and it
achieved very good values for both the small-signal and large-signal Figures of Merit. Extensive
PVT (process, supply voltage, and temperature) and mismatch simulations are reported to prove the
robustness of the proposed amplifier
- âŠ