Conception et test des circuits et systèmes numériques à haute fiabilité et sécurité

Research activities I carried on after my nomination as Chargé de Recherche deal with the definition of methodologies and tools for the design, the test and the reliability of secure digital circuits and trustworthy manufacturing. More recently, we have started a new research activity on the test of 3D stacked Integrated CIrcuits, based on the use of Through Silicon Vias. Moreover, thanks to the relationships I have maintained after my post-doc in Italy, I have kept on cooperating with Politecnico di Torino on the topics related to test and reliability of memories and microprocessors.Secure and Trusted DevicesSecurity is a critical part of information and communication technologies and it is the necessary basis for obtaining confidentiality, authentication, and integrity of data. The importance of security is confirmed by the extremely high growth of the smart-card market in the last 20 years. It is reported in "Le monde Informatique" in the article "Computer Crime and Security Survey" in 2007 that financial losses due to attacks on "secure objects" in the digital world are greater than $11 Billions. Since the race among developers of these secure devices and attackers accelerates, also due to the heterogeneity of new systems and their number, the improvement of the resistance of such components becomes today’s major challenge.Concerning all the possible security threats, the vulnerability of electronic devices that implement cryptography functions (including smart cards, electronic passports) has become the Achille’s heel in the last decade. Indeed, even though recent crypto-algorithms have been proven resistant to cryptanalysis, certain fraudulent manipulations on the hardware implementing such algorithms can allow extracting confidential information. So-called Side-Channel Attacks have been the first type of attacks that target the physical device. They are based on information gathered from the physical implementation of a cryptosystem. For instance, by correlating the power consumed and the data manipulated by the device, it is possible to discover the secret encryption key. Nevertheless, this point is widely addressed and integrated circuit (IC) manufacturers have already developed different kinds of countermeasures.More recently, new threats have menaced secure devices and the security of the manufacturing process. A first issue is the trustworthiness of the manufacturing process. From one side, secure devices must assure a very high production quality in order not to leak confidential information due to a malfunctioning of the device. Therefore, possible defects due to manufacturing imperfections must be detected. This requires high-quality test procedures that rely on the use of test features that increases the controllability and the observability of inner points of the circuit. Unfortunately, this is harmful from a security point of view, and therefore the access to these test features must be protected from unauthorized users. Another harm is related to the possibility for an untrusted manufacturer to do malicious alterations to the design (for instance to bypass or to disable the security fence of the system). Nowadays, many steps of the production cycle of a circuit are outsourced. For economic reasons, the manufacturing process is often carried out by foundries located in foreign countries. The threat brought by so-called Hardware Trojan Horses, which was long considered theoretical, begins to materialize.A second issue is the hazard of faults that can appear during the circuit’s lifetime and that may affect the circuit behavior by way of soft errors or deliberate manipulations, called Fault Attacks. They can be based on the intentional modification of the circuit’s environment (e.g., applying extreme temperature, exposing the IC to radiation, X-rays, ultra-violet or visible light, or tampering with clock frequency) in such a way that the function implemented by the device generates an erroneous result. The attacker can discover secret information by comparing the erroneous result with the correct one. In-the-field detection of any failing behavior is therefore of prime interest for taking further action, such as discontinuing operation or triggering an alarm. In addition, today’s smart cards use 90nm technology and according to the various suppliers of chip, 65nm technology will be effective on the horizon 2013-2014. Since the energy required to force a transistor to switch is reduced for these new technologies, next-generation secure systems will become even more sensitive to various classes of fault attacks.Based on these considerations, within the group I work with, we have proposed new methods, architectures and tools to solve the following problems:• Test of secure devices: unfortunately, classical techniques for digital circuit testing cannot be easily used in this context. Indeed, classical testing solutions are based on the use of Design-For-Testability techniques that add hardware components to the circuit, aiming to provide full controllability and observability of internal states. Because crypto‐ processors and others cores in a secure system must pass through high‐quality test procedures to ensure that data are correctly processed, testing of crypto chips faces a dilemma. In fact design‐for‐testability schemes want to provide high controllability and observability of the device while security wants minimal controllability and observability in order to hide the secret. We have therefore proposed, form one side, the use of enhanced scan-based test techniques that exploit compaction schemes to reduce the observability of internal information while preserving the high level of testability. From the other side, we have proposed the use of Built-In Self-Test for such devices in order to avoid scan chain based test.• Reliability of secure devices: we proposed an on-line self-test architecture for hardware implementation of the Advanced Encryption Standard (AES). The solution exploits the inherent spatial replications of a parallel architecture for implementing functional redundancy at low cost.• Fault Attacks: one of the most powerful types of attack for secure devices is based on the intentional injection of faults (for instance by using a laser beam) into the system while an encryption occurs. By comparing the outputs of the circuits with and without the injection of the fault, it is possible to identify the secret key. To face this problem we have analyzed how to use error detection and correction codes as counter measure against this type of attack, and we have proposed a new code-based architecture. Moreover, we have proposed a bulk built-in current-sensor that allows detecting the presence of undesired current in the substrate of the CMOS device.• Fault simulation: to evaluate the effectiveness of countermeasures against fault attacks, we developed an open source fault simulator able to perform fault simulation for the most classical fault models as well as user-defined electrical level fault models, to accurately model the effect of laser injections on CMOS circuits.• Side-Channel attacks: they exploit physical data-related information leaking from the device (e.g. current consumption or electro-magnetic emission). One of the most intensively studied attacks is the Differential Power Analysis (DPA) that relies on the observation of the chip power fluctuations during data processing. I studied this type of attack in order to evaluate the influence of the countermeasures against fault attack on the power consumption of the device. Indeed, the introduction of countermeasures for one type of attack could lead to the insertion of some circuitry whose power consumption is related to the secret key, thus allowing another type of attack more easily. We have developed a flexible integrated simulation-based environment that allows validating a digital circuit when the device is attacked by means of this attack. All architectures we designed have been validated through this tool. Moreover, we developed a methodology that allows to drastically reduce the time required to validate countermeasures against this type of attack.TSV- based 3D Stacked Integrated Circuits TestThe stacking process of integrated circuits using TSVs (Through Silicon Via) is a promising technology that keeps the development of the integration more than Moore’s law, where TSVs enable to tightly integrate various dies in a 3D fashion. Nevertheless, 3D integrated circuits present many test challenges including the test at different levels of the 3D fabrication process: pre-, mid-, and post- bond tests. Pre-bond test targets the individual dies at wafer level, by testing not only classical logic (digital logic, IOs, RAM, etc) but also unbounded TSVs. Mid-bond test targets the test of partially assembled 3D stacks, whereas finally post-bond test targets the final circuit.The activities carried out within this topic cover 2 main issues:• Pre-bond test of TSVs: the electrical model of a TSV buried within the substrate of a CMOS circuit is a capacitance connected to ground (when the substrate is connected to ground). The main assumption is that a defect may affect the value of that capacitance. By measuring the variation of the capacitance’s value it is possible to check whether the TSV is correctly fabricated or not. We have proposed a method to measure the value of the capacitance based on the charge/ discharge delay of the RC network containing the TSV.• Test infrastructures for 3D stacked Integrated Circuits: testing a die before stacking to another die introduces the problem of a dynamic test infrastructure, where test data must be routed to a specific die based on the reached fabrication step. New solutions are proposed in literature that allow reconfiguring the test paths within the circuit, based on on-the-fly requirements. We have started working on an extension of the IEEE P1687 test standard that makes use of an automatic die-detection based on pull-up resistors.Memory and Microprocessor Test and ReliabilityThanks to device shrinking and miniaturization of fabrication technology, performances of microprocessors and of memories have grown of more than 5 magnitude order in the last 30 years. With this technology trend, it is necessary to face new problems and challenges, such as reliability, transient errors, variability and aging.In the last five years I’ve worked in cooperation with the Testgroup of Politecnico di Torino (Italy) to propose a new method to on-line validate the correctness of the program execution of a microprocessor. The main idea is to monitor a small set of control signals of the processors in order to identify incorrect activation sequences. This approach can detect both permanent and transient errors of the internal logic of the processor.Concerning the test of memories, we have proposed a new approach to automatically generate test programs starting from a functional description of the possible faults in the memory.Moreover, we proposed a new methodology, based on microprocessor error probability profiling, that aims at estimating fault injection results without the need of a typical fault injection setup. The proposed methodology is based on two main ideas: a one-time fault-injection analysis of the microprocessor architecture to characterize the probability of successful execution of each of its instructions in presence of a soft-error, and a static and very fast analysis of the control and data flow of the target software application to compute its probability of success

Memory built-in self-repair and correction for improving yield: a review

Nanometer memories are highly prone to defects due to dense structure, necessitating memory built-in self-repair as a must-have feature to improve yield. Today’s system-on-chips contain memories occupying an area as high as 90% of the chip area. Shrinking technology uses stricter design rules for memories, making them more prone to manufacturing defects. Further, using 3D-stacked memories makes the system vulnerable to newer defects such as those coming from through-silicon-vias (TSV) and micro bumps. The increased memory size is also resulting in an increase in soft errors during system operation. Multiple memory repair techniques based on redundancy and correction codes have been presented to recover from such defects and prevent system failures. This paper reviews recently published memory repair methodologies, including various built-in self-repair (BISR) architectures, repair analysis algorithms, in-system repair, and soft repair handling using error correcting codes (ECC). It provides a classification of these techniques based on method and usage. Finally, it reviews evaluation methods used to determine the effectiveness of the repair algorithms. The paper aims to present a survey of these methodologies and prepare a platform for developing repair methods for upcoming-generation memories

Advanced Applications of Rapid Prototyping Technology in Modern Engineering

Rapid prototyping (RP) technology has been widely known and appreciated due to its flexible and customized manufacturing capabilities. The widely studied RP techniques include stereolithography apparatus (SLA), selective laser sintering (SLS), three-dimensional printing (3DP), fused deposition modeling (FDM), 3D plotting, solid ground curing (SGC), multiphase jet solidification (MJS), laminated object manufacturing (LOM). Different techniques are associated with different materials and/or processing principles and thus are devoted to specific applications. RP technology has no longer been only for prototype building rather has been extended for real industrial manufacturing solutions. Today, the RP technology has contributed to almost all engineering areas that include mechanical, materials, industrial, aerospace, electrical and most recently biomedical engineering. This book aims to present the advanced development of RP technologies in various engineering areas as the solutions to the real world engineering problems

Developing variant interpretation pipelines for inherited retinal diseases and ciliopathies: using medical genomics to improve diagnostic yield

Primary ciliopathies are a group of rare inherited disorders caused by defects in the structure or function of primary cilia (the ‘cell’s antenna’). This thesis describes approaches to improve molecular diagnosis rates for primary ciliopathy patients over the ~40-80% currently achieved, through whole genome sequencing (WGS) analysis and functional variant interpretation. Firstly, I analysed WGS data from the 100,000 Genomes Project (100K) for participants who were clinically suspected to have primary ciliopathies. I identified a molecular diagnosis rate for n=45/83 (54.2%), providing a 21.7% diagnostic uplift compared to results previously reported by Genomics England (GEL). I then performed a reverse phenotyping study, starting by looking for pathogenic variants in nine multisystemic ciliopathy disease genes across the 100K rare disease dataset. This was linked back to available clinical data, aiming to identify participants with “hidden” ciliopathy diagnoses recruited to alternative categories. I identified 18 new, reportable diagnoses and 44 previously reported by GEL. I also found 11 un-reportable molecular diagnoses, lacking key clinical features to provide a confident fit for phenotype. This shows that the quality of entered phenotypic data is critical to allow accurate genotype-phenotype correlation. In a third study, I developed strategies for functional interpretation of eight TMEM67 missense variants of uncertain significance (VUSs) with collaborators in Ireland, using CRISPR/Cas9 gene editing in a human ciliated cell-line (RPE-1) and C. elegans. These assays provided interpretation of three VUS as benign and five as pathogenic. The two 100K studies show that diagnosis rates for ciliopathies can be improved through WGS analysis, especially structural and splice variant analysis. We are a long way from delivering a high-throughput system for VUS interpretation that could provide clinical utility in the diagnostic setting. Overall, we have provided benefit for ciliopathy patients through additional molecular diagnoses, accompanied by transferable skills applicable to wider patient group

Développement d'architectures HW/SW tolérantes aux fautes et auto-calibrantes pour les technologies Intégrées 3D

Malgré les avantages de l'intégration 3D, le test, le rendement et la fiabilité des Through-Silicon-Vias (TSVs) restent parmi les plus grands défis pour les systèmes 3D à base de Réseaux-sur-Puce (Network-on-Chip - NoC). Dans cette thèse, une stratégie de test hors-ligne a été proposé pour les interconnections TSV des liens inter-die des NoCs 3D. Pour le TSV Interconnect Built-In Self-Test (TSV-IBIST) on propose une nouvelle stratégie pour générer des vecteurs de test qui permet la détection des fautes structuraux (open et short) et paramétriques (fautes de délaye). Des stratégies de correction des fautes transitoires et permanents sur les TSV sont aussi proposées aux plusieurs niveaux d'abstraction: data link et network. Au niveau data link, des techniques qui utilisent des codes de correction (ECC) et retransmission sont utilisées pour protégé les liens verticales. Des codes de correction sont aussi utilisés pour la protection au niveau network. Les défauts de fabrication ou vieillissement des TSVs sont réparé au niveau data link avec des stratégies à base de redondance et sérialisation. Dans le réseau, les liens inter-die défaillante ne sont pas utilisables et un algorithme de routage tolérant aux fautes est proposé. On peut implémenter des techniques de tolérance aux fautes sur plusieurs niveaux. Les résultats ont montré qu'une stratégie multi-level atteint des très hauts niveaux de fiabilité avec un cout plus bas. Malheureusement, il n'y as pas une solution unique et chaque stratégie a ses avantages et limitations. C'est très difficile d'évaluer tôt dans le design flow les couts et l'impact sur la performance. Donc, une méthodologie d'exploration de la résilience aux fautes est proposée pour les NoC 3D mesh.3D technology promises energy-efficient heterogeneous integrated systems, which may open the way to thousands cores chips. Silicon dies containing processing elements are stacked and connected by vertical wires called Through-Silicon-Vias. In 3D chips, interconnecting an increasing number of processing elements requires a scalable high-performance interconnect solution: the 3D Network-on-Chip. Despite the advantages of 3D integration, testing, reliability and yield remain the major challenges for 3D NoC-based systems. In this thesis, the TSV interconnect test issue is addressed by an off-line Interconnect Built-In Self-Test (IBIST) strategy that detects both structural (i.e. opens, shorts) and parametric faults (i.e. delays and delay due to crosstalk). The IBIST circuitry implements a novel algorithm based on the aggressor-victim scenario and alleviates limitations of existing strategies. The proposed Kth-aggressor fault (KAF) model assumes that the aggressors of a victim TSV are neighboring wires within a distance given by the aggressor order K. Using this model, TSV interconnect tests of inter-die 3D NoC links may be performed for different aggressor order, reducing test times and circuitry complexity. In 3D NoCs, TSV permanent and transient faults can be mitigated at different abstraction levels. In this thesis, several error resilience schemes are proposed at data link and network levels. For transient faults, 3D NoC links can be protected using error correction codes (ECC) and retransmission schemes using error detection (Automatic Retransmission Query) and correction codes (i.e. Hybrid error correction and retransmission).For transients along a source-destination path, ECC codes can be implemented at network level (i.e. Network-level Forward Error Correction). Data link solutions also include TSV repair schemes for faults due to fabrication processes (i.e. TSV-Spare-and-Replace and Configurable Serial Links) and aging (i.e. Interconnect Built-In Self-Repair and Adaptive Serialization) defects. At network-level, the faulty inter-die links of 3D mesh NoCs are repaired by implementing a TSV fault-tolerant routing algorithm. Although single-level solutions can achieve the desired yield / reliability targets, error mitigation can be realized by a combination of approaches at several abstraction levels. To this end, multi-level error resilience strategies have been proposed. Experimental results show that there are cases where this multi-layer strategy pays-off both in terms of cost and performance. Unfortunately, one-fits-all solution does not exist, as each strategy has its advantages and limitations. For system designers, it is very difficult to assess early in the design stages the costs and the impact on performance of error resilience. Therefore, an error resilience exploration (ERX) methodology is proposed for 3D NoCs.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF

On Energy Efficient Computing Platforms

In accordance with the Moore's law, the increasing number of on-chip integrated transistors has enabled modern computing platforms with not only higher processing power but also more affordable prices. As a result, these platforms, including portable devices, work stations and data centres, are becoming an inevitable part of the human society. However, with the demand for portability and raising cost of power, energy efficiency has emerged to be a major concern for modern computing platforms. As the complexity of on-chip systems increases, Network-on-Chip (NoC) has been proved as an efficient communication architecture which can further improve system performances and scalability while reducing the design cost. Therefore, in this thesis, we study and propose energy optimization approaches based on NoC architecture, with special focuses on the following aspects. As the architectural trend of future computing platforms, 3D systems have many bene ts including higher integration density, smaller footprint, heterogeneous integration, etc. Moreover, 3D technology can signi cantly improve the network communication and effectively avoid long wirings, and therefore, provide higher system performance and energy efficiency. With the dynamic nature of on-chip communication in large scale NoC based systems, run-time system optimization is of crucial importance in order to achieve higher system reliability and essentially energy efficiency. In this thesis, we propose an agent based system design approach where agents are on-chip components which monitor and control system parameters such as supply voltage, operating frequency, etc. With this approach, we have analysed the implementation alternatives for dynamic voltage and frequency scaling and power gating techniques at different granularity, which reduce both dynamic and leakage energy consumption. Topologies, being one of the key factors for NoCs, are also explored for energy saving purpose. A Honeycomb NoC architecture is proposed in this thesis with turn-model based deadlock-free routing algorithms. Our analysis and simulation based evaluation show that Honeycomb NoCs outperform their Mesh based counterparts in terms of network cost, system performance as well as energy efficiency.Siirretty Doriast

Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems

Effects of Secondary Electron Emission on the Plasma Sheath and Local Electron Energy Distribution with Application to Hall Thrusters.

The nature of plasma transport across the magnetic field in crossed-field (CF) devices such as Hall effect thrusters (HETs) remains largely an unsolved problem. This can be further complicated by the presence of secondary electrons derived from the thrusters channel wall due to the impact of photons and electrons. The role of these secondary electrons in the operation of HETs has been a subject of investigation in recent years. Under normal operating conditions of a HET, several physical phenomena occur simultaneously and the interaction of the plasma with the channel walls of the thruster play an important role in its effective operation. These plasma wall interactions produce secondary electrons that have a non-linear coupling effect with the bulk plasma and affect the performance of crossed field devices by changing the sheath potential as well as the electron energy distribution. This influence is not yet fully understood in the community and thus the computational models are based on assumptions that are not highly accurate. Experimentally, there is little available data on the SEE yield in plasma and its effects to environments similar to that of a Hall thruster, which could be used to validate existing numerical models. A test-bed apparatus is needed to understand these effects that could serve as a tool to validate and improve existing numerical models by providing the appropriate boundary conditions, secondary yield coefficients and variation of plasma parameters to aid the future design of HETs. In this work, a bench-top apparatus is developed to elucidate the role that secondary electrons play in regards to crossed field transport and energy flow to the walls. An electron beam which simulates energetic electrons in Hall channel is used to generate a secondary electron plume at the surface of various targets (Cu, C, BN) which simulates channel wall. The response of the plasma to these secondary electrons is assessed by measuring changes to the potential distribution in the sheath of the irradiated target and the measured electron energy distribution. An attempt is made to relate phenomena and trends observed in this work with those in Hall thrusters.PhDNuclear Engineering and Radiological SciencesUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/111614/1/sawlanik_1.pd