Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Design-for-delay-testability techniques for high-speed digital circuits

The importance of delay faults is enhanced by the ever increasing clock rates and decreasing geometry sizes of nowadays' circuits. This thesis focuses on the development of Design-for-Delay-Testability (DfDT) techniques for high-speed circuits and embedded cores. The rising costs of IC testing and in particular the costs of Automatic Test Equipment are major concerns for the semiconductor industry. To reverse the trend of rising testing costs, DfDT is\ud getting more and more important

Iddq testing of a CMOS 10-bit charge scaling digital-to-analog converter

This work presents an effective built-in current sensor (BICS), which has a very small impact on the performance of the circuit under test (CUT). The proposed BICS works in two-modes the normal mode and the test mode. In the normal mode the BICS is isolated from the CUT due to which there is no performance degradation of the CUT. In the testing mode, our BICS detects the abnormal current caused by permanent manufacturing defects. Further more our BICS can also distinguish the type of defect induced (Gate-source short, source-drain short and drain-gate short). Our BICS requires neither an external voltage source nor current source. Hence the BICS requires less area and is more efficient than the conventional current sensors. The circuit under test is a 10-bit digital to analog converter using charge-scaling architecture

An Integrated Test Plan for an Advanced Very Large Scale Integrated Circuit Design Group

VLSI testing poses a number of problems which includes the selection of test techniques, the determination of acceptable fault coverage levels, and test vector generation. Available device test techniques are examined and compared. Design rules should be employed to assure the design is testable. Logic simulation systems and available test utilities are compared. The various methods of test vector generation are also examined. The selection criteria for test techniques are identified. A table of proposed design rules is included. Testability measurement utilities can be used to statistically predict the test generation effort. Field reject rates and fault coverage are statistically related. Acceptable field reject rates can be achieved with less than full test vector fault coverage. The methods and techniques which are examined form the basis of the recommended integrated test plan. The methods of automatic test vector generation are relatively primitive but are improving

Design and Test of a Gate Driver with Variable Drive and Self-Test Capability Implemented in a Silicon Carbide CMOS Process

Discrete silicon carbide (SiC) power devices have long demonstrated abilities that outpace those of standard silicon (Si) parts. The improved physical characteristics allow for faster switching, lower on-resistance, and temperature performance. The capabilities unleashed by these devices allow for higher efficiency switch-mode converters as well as the advance of power electronics into new high-temperature regimes previously unimaginable with silicon devices. While SiC power devices have reached a relative level of maturity, recent work has pushed the temperature boundaries of control electronics further with silicon carbide integrated circuits. The primary requirement to ensure rapid switching of power MOSFETs was a gate drive buffer capable of taking a control signal and driving the MOSFET gate with high current required. In this work, the first integrated SiC CMOS gate driver was developed in a 1.2 μm SiC CMOS process to drive a SiC power MOSFET. The driver was designed for close integration inside a power module and exposure to high temperatures. The drive strength of the gate driver was controllable to allow for managing power MOSFET switching speed and potential drain voltage overshoot. Output transistor layouts were optimized using custom Python software in conjunction with existing design tool resources. A wafer-level test system was developed to identify yield issues in the gate driver output transistors. This method allowed for qualitative and quantitative evaluation of transistor leakage while the system was under probe. Wafer-level testing and results are presented. The gate driver was tested under high temperature operation up to 530 degrees celsius. An integrated module was built and tested to illustrate the capability of the gate driver to control a power MOSFET under load. The adjustable drive strength feature was successfully demonstrated

Power supply ramping for quasi-static testing of PLLs

An innovative approach for testing PLLs in open loop-mode is presented. The operational method consists of ramping the PLL's power supply by means of a periodic sawtooth signal. The reference and feedback inputs of the PLL in open-loop mode are connected to the clock reference signal or to ground. Then, the corresponding quiescent current, clock output, and oscillator control voltage signatures are monitored and sampled at specific times. When the power supply is swept, all transistors are forced into various regions of operation causing the sensitivity of the faults to the specific stimulus to be magnified. The developed method of structural testing for PLLs yields high fault coverage results making it a potential and attractive technique for production wafer testing

A built-in self-test technique for high speed analog-to-digital converters

Fundação para a Ciência e a Tecnologia (FCT) - PhD grant (SFRH/BD/62568/2009

Electrical and electronic devices and components: A compilation

Components and techniques which may be useful in the electronics industry are described. Topics discussed include transducer technology, printed-circuit technology, solid state devices, MOS transistors, Gunn device, microwave antennas, and position indicators

A Comprehensive Fault Model for Concurrent Error Detection in MOS Circuits

Naval Electronics Sys. Comm. and Office of Naval Research / N00039-80-C-0556Ope

Design of Analog CMOS Circuits for Batteryless Implantable Telemetry Systems

A wireless biomedical telemetry system is a device that collects biomedical signal measurements and transmits data through wireless RF communication. Testing medical treatments often involves experimentation on small laboratory animals, such as genetically modified mice and rats. Using batteries as a power source results in many practical issues, such as increased size of the implant and limited operating lifetime. Wireless power harvesting for implantable biomedical devices removes the need for batteries integrated into the implant. This will reduce device size and remove the need for surgical replacement due to battery depletion. Resonant inductive coupling achieves wireless power transfer in a manner modelled by a step down transformer. With this methodology, power harvesting for an implantable device is realized with the use of a large primary coil external to the subject, and a smaller secondary coil integrated into the implant. The signal received from the secondary coil must be regulated to provide a stable direct current (DC) power supply, which will be used to power the electronics in the implantable device. The focus of this work is on development of an electronic front-end for wireless powering of an implantable biomedical device. The energy harvesting front-end circuit is comprised of a rectifier, LDO regulator, and a temperature insensitive voltage reference. Physical design of the front-end circuit is developed in 0.13um CMOS technology with careful attention to analog layout issues. Post-layout simulation results are presented for each sub-block as well as the full front-end structure. The LDO regulator operates with supply voltages in the range of 1V to 1.5V with quiescent current of 10.5uA The complete power receiver front-end has a power conversion efficiency of up to 29%