Wideband integrated circuits for optical communication systems

The exponential growth of internet traffic drives datacenters to constantly improvetheir capacity. Several research and industrial organizations are aiming towardsTbps Ethernet and beyond, which brings new challenges to the field of high-speedbroadband electronic circuit design. With datacenters rapidly becoming significantenergy consumers on the global scale, the energy efficiency of the optical interconnecttransceivers takes a primary role in the development of novel systems. Furthermore,wideband optical links are finding application inside very high throughput satellite(V/HTS) payloads used in the ever-expanding cloud of telecommunication satellites,enabled by the maturity of the existing fiber based optical links and the hightechnology readiness level of radiation hardened integrated circuit processes. Thereare several additional challenges unique in the design of a wideband optical system.The overall system noise must be optimized for the specific application, modulationscheme, PD and laser characteristics. Most state-of-the-art wideband circuits are builton high-end semiconductor SiGe and InP technologies. However, each technologydemands specific design decisions to be made in order to get low noise, high energyefficiency and adequate bandwidth. In order to overcome the frequency limitationsof the optoelectronic components, bandwidth enhancement and channel equalizationtechniques are used. In this work various blocks of optical communication systems aredesigned attempting to tackle some of the aforementioned challenges. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback,are designed and measured, utilizing a state-of-the-art 130 nm InP DHBT technology.A modular equalizer block built in 130 nm SiGe HBT technology is presented. Threeultra-wideband traveling wave amplifiers, a 4-cell, a single cell and a matrix single-stage, are designed in a 250 nm InP DHBT process to test the limits of distributedamplification. A differential VCSEL driver circuit is designed and integrated in a4x 28 Gbps transceiver system for intra-satellite optical communications based in arad-hard 130nm SiGe process

Optical transmitter based on a 1.3-mu m VCSEL and a SiGe driver circuit for short-reach applications and beyond

Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission wavelength in the 1.3-mu m region for intensity modulation (IM)/direct detection optical transmissions enable longer fiber reach compared to C-band VCSELs, thanks to the extremely low chromatic dispersion impact at that wavelength. A lot of effort has been recently dedicated to novel cavity designs in order to enhance LW-VCSELs' modulation bandwidth to allow higher data rates. Another approach to further improve VCSEL-based IM speed consists of making use of dedicated driver circuits implementing feedforward equalization (FFE). In this paper, we present a transmitter assembly incorporating a four-channel 0.13-mu m SiGe driver circuit wire-bonded to a novel dual 1.3-mu m VCSEL array. The short-cavity indium phosphide buried tunnel junction VCSEL design minimizes both the photon lifetime and the device parasitic currents. The integrated driver circuit requires 2.5-V supply voltage only due to the implementation of a pseudobalanced regulator; it includes a two-tap asymmetric FFE, where magnitude, sign, relative delay, and pulse width distortion of the taps can be modified. Through the proposed transmitter, standard single-mode fiber reach of 20 and 4.5 km, respectively, for 28- and 40-Gb/s data rate has been demonstrated with state-of-the-art power consumption. Transmitter performance has been analyzed through pseudorandom bit sequences of both 2(7)-1 and 2(31)-1 length, and the additional benefit due to the use of the driver circuit has been discussed in detail. A final comparison with state-of-the-art VCSEL drivers is also includedt

A PAM-4 VCSEL TRANSMITTER WITH 2.5 TAP NON-LINEAR EQUALIZER IN 65NM CMOS

This thesis presents a Vertical Cavity Surface Emitting Laser (VCSEL) based transmitter that uses a nonlinear equalizer to equalize for nonlinear and bandwidth limited behavior of VCSEL. The transmitter employs PAM4 modulation scheme and a 2.5 tap nonlinear equalizer to maximize the vertical eye opening and reduce the skew in PAM4 eyes resulting from nonlinear behavior. The equalizer can also compensate for the static nonlinearity resulting from finite output impedance of tail current sources and low bandwidth resulting from the large capacitance (parasitic and pad) and large resistance (of VCSEL) at the output node. The nonlinear equalizer reduces to a traditional linear equalizer in cases where VCSEL can be approximated as linear e.g., for high bias currents. For such cases, 2.5 tap equalizer provides performance improvement over traditional 2 tap equalizer due to larger memory. The proposed architecture here implements a 2.5 tap nonlinear equalizer using a look-up-table approach and can equalize for all 32 (4^2.5) rising, falling and non-transitioning edges separately. The proposed architecture also uses a nonuniform DAC in the current mode output driver which utilizes the information related to unused levels and results in improved resolution when compared against the traditionally used uniform DAC. The transmitter consumes a power of 250mW and achieves a data rate of 50Gbps with a power efficiency of 5pJ/bit. The core transmitter area including PRBS, LUT, serializer and output driver is 375um*500um while the total chip area is 1.4mm*1.4mm. The transmitter has been implemented in 65nm CMOS technology

Research and design of high-speed advanced analogue front-ends for fibre-optic transmission systems

In the last decade, we have witnessed the emergence of large, warehouse-scale data centres which have enabled new internet-based software applications such as cloud computing, search engines, social media, e-government etc. Such data centres consist of large collections of servers interconnected using short-reach (reach up to a few hundred meters) optical interconnect. Today, transceivers for these applications achieve up to 100Gb/s by multiplexing 10x 10Gb/s or 4x 25Gb/s channels. In the near future however, data centre operators have expressed a need for optical links which can support 400Gb/s up to 1Tb/s. The crucial challenge is to achieve this in the same footprint (same transceiver module) and with similar power consumption as today’s technology. Straightforward scaling of the currently used space or wavelength division multiplexing may be difficult to achieve: indeed a 1Tb/s transceiver would require integration of 40 VCSELs (vertical cavity surface emitting laser diode, widely used for short‐reach optical interconnect), 40 photodiodes and the electronics operating at 25Gb/s in the same module as today’s 100Gb/s transceiver. Pushing the bit rate on such links beyond today’s commercially available 100Gb/s/fibre will require new generations of VCSELs and their driver and receiver electronics. This work looks into a number of state‐of-the-art technologies and investigates their performance restraints and recommends different set of designs, specifically targeting multilevel modulation formats. Several methods to extend the bandwidth using deep submicron (65nm and 28nm) CMOS technology are explored in this work, while also maintaining a focus upon reducing power consumption and chip area. The techniques used were pre-emphasis in rising and falling edges of the signal and bandwidth extensions by inductive peaking and different local feedback techniques. These techniques have been applied to a transmitter and receiver developed for advanced modulation formats such as PAM-4 (4 level pulse amplitude modulation). Such modulation format can increase the throughput per individual channel, which helps to overcome the challenges mentioned above to realize 400Gb/s to 1Tb/s transceivers

대역폭 증대 기술을 이용한 전력 효율적 고속 송신 시스템 설계

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022.2. 정덕균.The high-speed interconnect at the datacenter is being more crucial as 400 Gb Ethernet standards are developed. At the high data rate, channel loss re-quires bandwidth extension techniques for transmitters, even for short-reach channels. On the other hand, as the importance of east-to-west connection is rising, the data center architectures are switching to spine-leaf from traditional ones. In this trend, the number of short-reach optical interconnect is expected to be dominant. The vertical-cavity surface-emitting laser (VCSEL) is a com-monly used optical modulator for short-reach interconnect. However, since VCSEL has low bandwidth and nonlinearity, the optical transmitter also needs bandwidth-increasing techniques. Additionally, the power consumption of data centers reaches a point of concern to affect climate change. Therefore, this the-sis focuses on high-speed, power-efficient transmitters for data center applica-tions. Before the presenting circuit design, bandwidth extension techniques such as fractionally-spaced feed-forward equalizer (FFE), on-chip transmission line, inductive peaking, and T-coil are mathematically analyzed for their effec-tiveness. For the first chip, a power and area-efficient pulse-amplitude modulation 4 (PAM-4) transmitter using 3-tap FFE based on a slow-wave transmission line is presented. A passive delay line is adopted for generating an equalizer tap to overcome the high clocking power consumption. The transmission line achieves a high slow-wave factor of 15 with double floating metal shields around the differential coplanar waveguide. The transmitter includes 4:1 multi-plexers (MUXs) and a quadrature clock generator for high-speed data genera-tion in a quarter-rate system. The 4:1 MUX utilizes a 2-UI pulse generator, and the input configuration is determined by qualitative analysis. The chip is fabri-cated in 65 nm CMOS technology and occupies an area of 0.151 mm2. The proposed transmitter system exhibits an energy efficiency of 3.03 pJ/b at the data rate of 48 Gb/s with PAM-4 signaling. The second chip presents a power-efficient PAM-4 VCSEL transmitter using 3-tap FFE and negative-k T-coil. The phase interpolators (PIs) generate frac-tionally-spaced FFE tap and correct quadrature phase error. The PAM-4 com-bining 8:1 MUX is proposed rather than combining at output driver with double 4:1 MUXs to reduce serializing power consumption. T-coils at the internal and output node increase the bandwidth and remove inter-symbol interference (ISI). The negative-k T-coil at the output network increases the bandwidth 1.61 times than without T-coil. The VCSEL driver is placed on the high VSS domain for anode driving and power reduction. The chip is fabricated in 40 nm CMOS technology. The proposed VCSEL transmitter operates up to 48 Gb/s NRZ and 64 Gb/s PAM-4 with the power efficiency of 3.03 pJ/b and 2.09 pJ/b, respec-tively.400Gb 이더넷 표준이 개발됨에 따라 데이터 센터의 고속 상호 연결이 더욱 중요해지고 있다. 높은 데이터 속도에서의 채널 손실에 의해 단거리 채널의 경우에도 송신기에 대한 대역폭 확장 기술이 필요하다. 한편, 데이터 센터 내 동-서 연결의 중요성이 높아지면서 데이터 센터 아키텍처가 기존의 아키텍처에서 스파인-리프로 전환되고 있다. 이러한 추세에서 단거리 광학 인터커넥트의 수가 점차 우세해질 것으로 예상된다. 수직 캐비티 표면 방출 레이저(VCSEL)는 일반적으로 단거리 상호 연결을 위해 사용되는 광학 모듈레이터이다. VCSEL은 낮은 대역폭과 비선형성을 가지고 있기 때문에, 광 송신기도 대역폭 증가 기술을 필요로 한다. 또한, 데이터 센터의 전력 소비는 기후 변화에 영향을 미칠 수 있는 우려 지점에 도달했다. 따라서, 본 논문은 데이터 센터 응용을 위한 고속 전력 효율적인 송신기에 초점을 맞추고 있다. 회로 설계를 제시하기 전에, 부분 간격 피드-포워드 이퀄라이저 (FFE), 온칩 전송선로, 인덕터, T-코일과 같은 대역폭 확장 기술을 수학적으로 분석한다. 첫 번째 칩은 저속파 전송선로를 기반으로 한 3-탭 FFE를 사용하는 전력 및 면적 효율적인 펄스-진폭-변조 4(PAM-4) 송신기를 제시한다. 높은 클럭 전력 소비를 극복하기 위해 이퀄라이저 탭 생성을 위해 수동소자 지연 라인을 채택했다. 전송 라인은 차동 동일평면도파관 주위에 이중 플로팅 금속 차폐를 사용하여 15의 높은 전달속도 감쇠를 달성한다. 송신기에는 4:1 멀티플렉서(MUX)와 4-위상 클럭 생성기가 포함되어 있다. 4:1 MUX는 2-UI 펄스 발생기를 사용하며, 정성 분석에 의해 입력 구성이 결정된다. 이 칩은 65 nm CMOS 기술로 제작되었으며 0.151 mm2의 면적을 차지한다. 제안된 송신기 시스템은 PAM-4 신호와 함께 48 Gb/s의 데이터 속도에서 3.03 pJ/b의 에너지 효율을 보여준다. 두 번째 칩에서는 3-탭 FFE 및 역회전 T-코일을 사용하는 전력 효율적인 PAM-4 VCSEL 송신기를 제시한다. 위상 보간기(PI)는 부분 간격 FFE 탭을 생성하고 4-위상 클럭 오류를 수정하는 데 사용된다. 직렬화 전력 소비를 줄이기 위해 출력 드라이버에서 MSB와 LSB를 두 개의 4:1 MUX를 통해 결합하는 대신 8:1 MUX를 통해 PAM-4로 결합하는 회로가 제안된다. 내부 및 출력 노드에서 T-코일은 대역폭을 증가시키고 기호 간 간섭(ISI)을 제거한다. 출력 네트워크에서 역회전 T-코일은 T-코일이 없는 경우보다 대역폭을 1.61배 증가시킨다. VCSEL 드라이버는 양극 구동 및 전력 감소를 위해 높은 VSS 도메인에 배치된다. 이 칩은 40 nm CMOS 기술로 제작되었다. 제안된 VCSEL 송신기는 각각 3.03pJ/b와 2.09pJ/b의 전력 효율로 최대 48Gb/s NRZ와 64Gb/s PAM-4까지 작동한다.ABSTRACT I CONTENTS III LIST OF FIGURES V LIST OF TABLES IX CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 5 CHAPTER 2 BACKGROUND OF HIGH-SPEED INTERFACE 6 2.1 OVERVIEW 6 2.2 BASIS OF DATA CENTER ARCHITECTURE 9 2.3 SHORT-REACH INTERFACE STANDARDS 12 2.4 ANALYSES OF BANDWIDTH EXTENSION TECHNIQUES 16 2.4.1 FRACTIONALLY-SPACED FFE 16 2.4.2 TRANSMISSION LINE 21 2.4.3 INDUCTOR 24 2.4.4 T-COIL 33 CHAPTER 3 DESIGN OF 48 GB/S PAM-4 ELECTRICAL TRANSMITTER IN 65 NM CMOS 43 3.1 OVERVIEW 43 3.2 FFE BASED ON DOUBLE-SHIELDED COPLANAR WAVEGUIDE 46 3.2.1 BASIC CONCEPT 46 3.2.2 PROPOSED DOUBLE-SHIELDED COPLANAR WAVEGUIDE 47 3.3 DESIGN CONSIDERATION ON 4:1 MUX 50 3.4 PROPOSED PAM-4 ELECTRICAL TRANSMITTER 53 3.5 MEASUREMENT 57 CHAPTER 4 DESIGN OF 64 GB/S PAM-4 OPTICAL TRANSMITTER IN 40 NM CMOS 64 4.1 OVERVIEW 64 4.2 DESIGN CONSIDERATION OF OPTICAL TRANSMITTER 66 4.3 PROPOSED PAM-4 VCSEL TRANSMITTER 69 4.4 MEASUREMENT 82 CHAPTER 5 CONCLUSIONS 88 BIBLIOGRAPHY 90 초 록 101박

Survey of Photonic and Plasmonic Interconnect Technologies for Intra-Datacenter and High-Performance Computing Communications

Large scale data centers (DC) and high performance computing (HPC) systems require more and more computing power at higher energy efficiency. They are already consuming megawatts of power, and a linear extrapolation of trends reveals that they may eventually lead to unrealistic power consumption scenarios in order to satisfy future requirements (e.g., Exascale computing). Conventional complementary metal oxide semiconductor (CMOS)-based electronic interconnects are not expected to keep up with the envisioned future board-to-board and chip-to-chip (within multi-chip-modules) interconnect requirements because of bandwidth-density and power-consumption limitations. However, low-power and high-speed optics-based interconnects are emerging as alternatives for DC and HPC communications; they offer unique opportunities for continued energy-efficiency and bandwidth-density improvements, although cost is a challenge at the shortest length scales. Plasmonics-based interconnects on the other hand, due to their extremely small size, offer another interesting solution for further scaling operational speed and energy efficiency. At the device-level, CMOS compatibility is also an important issue, since ultimately photonics or plasmonics will have to be co-integrated with electronics. In this paper, we survey the available literature and compare the aforementioned interconnect technologies, with respect to their suitability for high-speed and energy-efficient on-chip and offchip communications. This paper refers to relatively short links with potential applications in the following interconnect distance hierarchy: local group of racks, board to board, module to module, chip to chip, and on chip connections. We compare different interconnect device modules, including low-energy output devices (such as lasers, modulators, and LEDs), photodetectors, passive devices (i.e., waveguides and couplers) and electrical circuitry (such as laserdiode drivers, modulator drivers, transimpedance, and limiting amplifiers). We show that photonic technologies have the potential to meet the requirements for selected HPC and DC applications in a shorter term. We also present that plasmonic interconnect modules could offer ultra-compact active areas, leading to high integration bandwidth densities, and low device capacitances allowing for ultra-high bandwidth operation that would satisfy the application requirements further into the future

Multilevel Modulation and Transmission in VCSEL-based Short-range Fiber Optic Links

As the demand for ever higher throughput short-range optical links is growing, research and industry associations have shown increased interest in multilevel modulation formats, such as the four leveled pulse amplitude modulation, referred to as 4-PAM. As on-off keying (OOK) persists to be the choice for low latency applications, for example high performance computing, datacenter operators see 4-PAM as the next format to succeed current OOK-based optical interconnects. Throughput can be increased in many ways: parallel links can be deployed, multicore fibers can be used or more efficient modulation formats with digital signal processing is an alternative. Therefore, to improve link data rates, the introduction of new modulation formats and pre-emphasis are primarily considered in this thesis. In a bandwidth-limited link, turning towards spectrally efficient formats is one of the methods to\ua0 overcome the bandwidth requirements of OOK. Such are the considerations when opting for 3-PAM or 4-PAM schemes. Both require lower bandwidth than OOK and are potential candidates in such scenarios. 4-PAM provides double spectral efficiency and double data rate at the same symbol rate as on-off keying, but, as with any technology transition, new challenges emerge, such as a higher SNR requirement, a lower tolerance to VCSEL nonlinearities and skewing of the signal in the time domain. 3-PAM could potentially be an in-between solution, as it requires 33% less bandwidth than OOK and is less sensitive to VCSEL dynamics which could impair the transmission. A study is presented where 3-PAM has outperformed both OOK and 4-PAM in the same link. Detailed investigation of legacy 25G class VCSELs has shown that devices with moderate damping are suitable for the transition to 4-PAM. The pre-emphasis of signals is a powerful tool to increase link bandwidth at the cost of modulation amplitude. This has been investigated in this thesis for on-offkeying and has shown 9% and 27% increase in bit rate for error-free operation with two pre-emphasis approaches. Similarly, pre-emphasis of a 4-PAM electrical signals has enabled 71.8 Gbps transmission back-to-back with lightweight forward error correction and 94 Gbps net data rate was achieved with the same pre-emphasis and post-processing using an offline least-mean-square equalizer

Power-Proportional Optical Links

The continuous increase in data transfer rate in short-reach links, such as chip-to-chip and between servers within a data-center, demands high-speed links. As power efficiency becomes ever more important in these links, power-efficient optical links need to be designed. Power efficiency in a link can be achieved by enabling power-proportional communication over the serial link. In power-proportional links, the power dissipated by a link is proportional to the amount of data communicated. Normally, data-rate demand is not constant, and the peak data-rate is not required all the time. If a link is not adapted according to the data-rate demand, there will be a fixed power dissipation, and the power efficiency of the link will degrade during the sub-maximal link utilization. Adapting links to real-time data-rate requirements reduces power dissipation. Power proportionality is achieved by scaling the power of the serial link linearly with the link utilization, and techniques such as variable data-rate and burst-mode can be adopted for this purpose. Links whose data rate (and hence power dissipation) can be varied in response to system demands are proposed in this work. Past works have presented rapidly reconfigurable bandwidth in variable data-rate receivers, allowing lower power dissipation for lower data-rate operation. However, maintaining synchronization during reconfiguration was not possible since previous approaches have introduced changes in front-end delay when they are reconfigured. This work presents a technique that allows rapid bandwidth adjustment while maintaining a near-constant delay through the receiver suitable for a power-scalable variable data-rate optical link. Measurements of a fabricated integrated circuit (IC) show nearly constant energy per bit across a 2× variation in data rate while introducing less than 10 % of a unit interval (UI) of delay variation. With continuously increasing data communication in data-centers, parallel optical links with ever-increasing per-lane data rates are being used to meet overall throughput demands. Simultaneously, power efficiency is becoming increasingly important for these links since they do not transmit useful data all the time. The burst-mode solution for vertical-cavity surface-emitting laser (VCSEL)-based point-to-point communication can be used to improve links’ energy efficiency during low link activity. The burst-mode technique for VCSEL-based links has not yet been deployed commercially. Past works have presented burst-mode solutions for single-channel receivers, allowing lower power dissipation during low link activity and solutions for fast activation of the receivers. However, this work presents a novel technique that allows rapid activation of a front-end and fast locking of a clock-and-data-recovery (CDR) for a multi-channel parallel link, utilizing opportunities arising from the parallel nature of many VCSEL-based links. The idea has been demonstrated through electrical and optical measurements of a fabricated IC at 10 Gbps, which show fast data detection and activation of the circuitry within 49 UIs while allowing the front-end to achieve better energy efficiency during low link activity. Simulation results are also presented in support of the proposed technique which allows the CDR to lock within 26 UIs from when it is powered on