Noise shaping Asynchronous SAR ADC based time to digital converter

Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits. Especially, high-resolution TDCs are increasingly employed in on-chip timing tests, such as jitter and clock skew measurements, as advanced fabrication technologies allow fine on-chip time resolutions. Its main purpose is to quantize the time interval of a pulse signal or the time interval between the rising edges of two clock signals. Similarly to ADCs, the performance of TDCs are also primarily characterized by Resolution, Sampling Rate, FOM, SNDR, Dynamic Range and DNL/INL. This work proposes and demonstrates 2nd order noise shaping Asynchronous SAR ADC based TDC architecture with highest resolution of 0.25 ps among current state of art designs with respect to post-layout simulation results. This circuit is a combination of low power/High Resolution 2nd Order Noise Shaped Asynchronous SAR ADC backend with simple Time to Amplitude converter (TAC) front-end and is implemented in 40nm CMOS technology. Additionally, special emphasis is given on the discussion on various current state of art TDC architectures.Electrical and Computer Engineerin

Voltage-to-Time Converter for High-Speed Time-Based Analog-to-Digital Converters

In modern complementary metal oxide semiconductor (CMOS) technologies, the supply voltage scales faster than the threshold voltage (Vth) of the transistors in successive smaller nodes. Moreover, the intrinsic gain of the transistors diminishes as well. Consequently, these issues increase the difficulty of designing higher speed and larger resolution analog-to-digital converters (ADCs) employing voltage-domain ADC architectures. Nevertheless, smaller transistor dimensions in state-of-the-art CMOS technologies leads to reduced capacitance, resulting in lower gate delays. Therefore, it becomes beneficial to first convert an input voltage to a 'time signal' using a voltage-to-time converter (VTC), instead of directly converting it into a digital output. This 'time-signal' could then be converted to a digital output through a time-to-digital converter (TDC) for complete analog-to-digital conversion. However, the overall performance of such an ADC will still be limited to the performance level of the voltage-to-time conversion process. Hence, this thesis presents the design of a linear VTC for a high-speed time-based ADC in 28 nm CMOS process. The proposed VTC consists of a sample-and-hold (S/H) circuit, a ramp generator and a comparator to perform the conversion of the input signal from the voltage to the time domain. Larger linearity is attained by integrating a constant current (with high output impedance) over a capacitor, generating a linear ramp. The VTC operates at 256 MSPS consuming 1.3 mW from 1 V supply with a full-scale 1 V pk-pk differential input signal, while achieving a time-domain output signal with a spurious-free-dynamic-range (SFDR) of 77 dB and a signal-to-noise-and-distortion ratio (SNDR) of 56 dB at close to Nyquist frequency (f = 126.5 MHz). The proposed VTC attains an output range of 2.7 ns, which is the highest linear output range for a VTC at this speed, published to date

Low power VCO-based analog-to-digital conversion

textThis dissertation presents novel two stage ADC architecture with a VCO based second stage. With the scaling of the supply voltages in modern CMOS process it is difficult to design high gain operational amplifiers needed for traditional voltage domain two-stage analog to digital converters. However time resolution continues to improve with the advancement in CMOS technology making VCO-based ADC more attractive. The nonlinearity in voltage-to-frequency transfer function is the biggest challenge in design of VCO based ADC. The hybrid approach used in this work uses a voltage domain first stage to determine the most significant bits and uses a VCO based second stage to quantize the small residue obtained from first stage. The architecture relaxes the gain requirement on the the first stage opamp and also relaxes the linearity requirements on the second stage VCO. The prototype ADC built in 65nm CMOS process achieves 63.7dB SNDR in 10MHz bandwidth while only consuming 1.1mW of power. The performance of the prototype chip is comparable to the state-of-art in terms of figure-of-merit but this new architecture uses significantly less circuit area.Electrical and Computer Engineerin

Aika-digitaalimuunnin laajakaistaisiin aikapohjaisiin analogia-digitaalimuuntimiin

Modern deeply scaled semiconductor processes make the design of voltage-domain circuits increasingly challenging. On the contrary, the area and power consumption of digital circuits are improving with every new process node. Consequently, digital solutions are designed in place of their purely analog counterparts in applications such as analog-to-digital (A/D) conversion. Time-based analog-to-digital converters (ADC) employ digital-intensive architectures by processing analog quantities in time-domain. The quantization step of the time-based A/D-conversion is carried out by a time-to-digital converter (TDC). A free-running ring oscillator -based TDC design is presented for use in wideband time-based ADCs. The proposed architecture aims to maximize time resolution and full-scale range, and to achieve error resilient conversion performance with minimized power and area consumptions. The time resolution is maximized by employing a high-frequency multipath ring oscillator, and the full-scale range is extended using a high-speed gray counter. The error resilience is achieved by custom sense-amplifier -based sampling flip-flops, gray coded counter and a digital error correction algorithm for counter sampling error correction. The implemented design achieves up to 9-bit effective resolution at 250 MS/s with 4.3 milliwatt power consumption.Modernien puolijohdeteknologioiden skaalautumisen seurauksena jännitetason piirien suunnittelu tulee entistä haasteellisemmaksi. Toisaalta digitaalisten piirirakenteiden pinta-ala sekä tehonkulutus pienenevät prosessikehityksen myötä. Tästä syystä digitaalisia ratkaisuja suunnitellaan vastaavien puhtaasti analogisien rakenteiden tilalle. Analogia-digitaalimuunnos (A/D-muunnos) voidaan toteuttaa jännitetason sijaan aikatasossa käyttämällä aikapohjaisia A/D-muuntimia, jotka ovat rakenteeltaan pääosin digitaalisia. Kvantisointivaihe aikapohjaisessa A/D-muuntimessa toteutetaan aika-digitaalimuuntimella. Työ esittelee vapaasti oskilloivaan silmukkaoskillaattoriin perustuvan aika-digitaalimuuntimen, joka on suunniteltu käytettäväksi laajakaistaisessa aikapohjaisessa A/D-muuntimessa. Esitelty rakenne pyrkii maksimoimaan muuntimen aikaresoluution sekä muunnosalueen, sekä saavuttamaan virhesietoisen muunnostoiminnan minimoidulla tehon sekä pinta-alan kulutuksella. Aikaresoluutio on maksimoitu hyödyntämällä suuritaajuista monipolkuista silmukkaoskillaattoria, ja muunnosalue on maksimoitu nopealla Gray-koodi -laskuripiirillä. Muunnosprosessin virhesietoisuus on saavutettu toteuttamalla näytteistys herkillä kiikkuelementeillä, hyödyntämällä Gray-koodattua laskuria, sekä jälkiprosessoimalla laskurin näytteistetyt arvot virheenkorjausalgoritmilla. Esitelty muunnintoteutus saavuttaa 9 bitin efektiivisen resoluution 250 MS/s näytetaajuudella ja 4.3 milliwatin tehonkulutuksella

Time-based, Low-power, Low-offset 5-bit 1 GS/s Flash ADC Design in 65nm CMOS Technology

Low-power, medium resolution, high-speed analog-to-digital converters (ADCs) have always been important block which have abundant applications such as digital signal processors (DSP), imaging sensors, environmental and biomedical monitoring devices. This study presents a low power Flash ADC designed in nanometer complementary metal-oxide semiconductors (CMOS) technology. Time analysis on the output delay of the comparators helps to generate one more bit. The proposed technique reduced the power consumption and chip area substantially in comparison to the previous state-of-the-art work. The proposed ADC was developed in TSMC 65nm CMOS technology. The offset cancellation technique was embedded in the proposed comparator to decrement the static offset of the comparator. Moreover, one more bit was generated without using extra comparators. The proposed ADC achieved 4.1 bits ENOB at input Nyquist frequency. The simulated differential and integral non-linearity static tests were equal to +0.26/-0.17 and +0.22/-0.15, respectively. The ADC consumed 7.7 mW at 1 GHz sampling frequency, achieving 415 fJ/Convstep Figure of Merit (FoM)

Power efficient analog-to-digital converters using both voltage and time domain information

As advanced wired and wireless communication systems attempt to achieve higher performance, the demand for high resolution and wide signal bandwidth in their associated ADCs is strongly increased. Recently, time-domain quantization has drawn attention from its scalability in deep submicron CMOS processes. Furthermore, there are several interesting aspects of time-domain quantizer by processing the signal in time rather than only in voltage domain especially for power efficiency. This research focuses on developing a new architecture for power efficient, high resolution ADCs using both voltage and time domain information. As a first approach, a new ΔƩ ADC based on a noise-shaped two-step integrating quantizer which quantizes the signal in voltage and time domains is presented. Attaining an extra order of noise-shaping from the integrating quantizer, the proposed ΔƩ ADC manifests a second-order noise-shaping with a first-order loop filter. Furthermore, this quantizer provides an 8b uantization in itself, drastically reducing the oversampling requirement. The proposed ADC also incorporates a new feedback DAC topology that alleviates the feedback DAC complexity of a two-step 8b quantizer. The measured results of the prototype ADC implemented in a 0.13μm CMOS demonstrate peak SNDR of 70.7dB (11.5b ENOB) at 8.1mW power, with an 8x OSR at 80MHz sampling frequency. To further improve ADC performance, a Nyquist ADC based on a time-based pipelined TDC is also proposed as a second approach. In this work, a simple V-T conversion scheme with a cheap low gain amplifier in its first stage and a hybrid time-domain quantization stage based on simple charge pump and capacitive DAC in its backend stages, are also proposed to improve ADC linearity and power efficiency. Using voltage and time domain information, the proposed ADC architecture is beneficial for both resolution and power efficiency, with MSBs resolved in voltage domain and LSBs in time domain. The measured results of the prototype ADC implemented in a 0.13μm CMOS demonstrate peak SNDR of 69.3dB (11.2b ENOB) at 6.38mW power and 70MHz sampling frequency. The FOM is 38.2fJ/conversion-step

Next generation analog-to-digital conversion using time-based encoding and digital synthesis techniques

The internet-of-things is a growing market segment which is based on an arrayof portable communication devices with high power efficiency. Advanced semiconductortechnology can easily improve their digital performance, but the samecannot be said for the analog blocks which are vital to their operation. Highperformance analog circuits continue to use conventional design techniques andarchitectures at the expense of power efficiency. Deeply scaled CMOS exaggeratesthis trade-off, opening the door for novel system techniques that take advantage ofthe digital nature of sub-micron transistors. This research focuses on two highlydigital ADCs which can mitigate the short channel effects of limited output swingand low intrinsic gain while also benefiting from process scaling.First, a multi-domain ADC is used to perform quantization on both voltageand time domain signals, relaxing the power-performance trade-off. This hybridapproach can lead to a high resolution, high efficiency data converter in scaledprocess. A prototype ADC was fabricated in 180nm CMOS, showing an SNDRof 73 dB, operating at 20 MHz sampling frequency, with a power consumption of1.28 mW.Next, an automated synthesis process is used to automatically generate a highspeed VCO-based quantizer from verilog code. Stochastic spatial averaging iscombined with a high speed open-loop noise-shaping quantizer to provide enhancedresolution in the presence of device mismatch. Simulation results of a prototypeADC in 180nm CMOS shows an SNDR of 49 dB, operating at 800 MHz samplingfrequency and 50 MHz signal bandwidth.Keywords: data converter, synthesis, verilog, ADC, SAR, TD

Quadrature Phase-Domain ADPLL with Integrated On-line Amplitude Locked Loop Calibration for 5G Multi-band Applications

5th generation wireless systems (5G) have expanded frequency band coverage with the low-band 5G and mid-band 5G frequencies spanning 600 MHz to 4 GHz spectrum. This dissertation focuses on a microelectronic implementation of CMOS 65 nm design of an All-Digital Phase Lock Loop (ADPLL), which is a critical component for advanced 5G wireless transceivers. The ADPLL is designed to operate in the frequency bands of 600MHz-930MHz, 2.4GHz-2.8GHz and 3.4GHz-4.2GHz. Unique ADPLL sub-components include: 1) Digital Phase Frequency Detector, 2) Digital Loop Filter, 3) Channel Bank Select Circuit, and 4) Digital Control Oscillator. Integrated with the ADPLL is a 90-degree active RC-CR phase shifter with on-line amplitude locked loop (ALL) calibration to facilitate enhanced image rejection while mitigating the effects of fabrication process variations and component mismatch. A unique high-sensitivity high-speed dynamic voltage comparator is included as a key component of the active phase shifter/ALL calibration subsystem. 65nm CMOS technology circuit designs are included for the ADPLL and active phase shifter with simulation performance assessments. Phase noise results for 1 MHz offset with carrier frequencies of 600MHz, 2.4GHz, and 3.8GHz are -130, -122, and -116 dBc/Hz, respectively. Monte Carlo simulations to account for process variations/component mismatch show that the active phase shifter with ALL calibration maintains accurate quadrature phase outputs when operating within the frequency bands 600MHz-930MHz, 2.4GHz-2.8GHz and 3.4GHz-4.2GHz

TIME-DIFFERENCE CIRCUITS: METHODOLOGY, DESIGN, AND DIGITAL REALIZATION

This thesis presents innovations for a special class of circuits called Time Difference (TD) circuits. We introduce a signal processing methodology with TD signals that alters the target signal from a magnitude perspective to time interval between two time events and systematically organizes the primary TD functions abstracted from existing TD circuits and systems. The TD circuits draw attention from a broad range of application fields. In addition, highly evolved complementary metal-oxide-semiconductor (CMOS) technology suffers from various problems related to voltage and current amplitude signal processing methods. Compared to traditional analog and digital circuits, TD circuits bring several compelling features: high-resolution, high-throughput, and low-design complexity with digital integration capability. Further, the fabrication technology is advancing into the nanometer regime; the reduction in voltage headroom limits the performance of traditional analog/mixed-signal designs. All-digital design of time-difference circuit needs to be stressed to adapt to the low-cost, low-power, and high-portability applications. We focus on Time-to-Digital Converters (TDC), one of the crucial building blocks in TD circuits. A novel algorithmic architecture is proposed based on a binary search algorithm and validated with both simulation and fabricated silicon. An all-digital structure Time-difference Amplifier (TDA) is designed and implemented to make FPGA and other all-digital implementations for TDC and related TD circuits feasible. Besides, we propose an all-digital timing measurement circuit based on the process variation from CMOS fabrication: PVTMC, which achieves a high measurement resolution: