A 10-b Fourth-Order Quadrature Bandpass Continuous-Time ΣΔ Modulator With 33-MHz Bandwidth for a Dual-Channel GNSS Receiver

This document is the Accepted Manuscript version of the following article: Junfeng Zhang, Yang Xu, Zehong Zhang, Yichuang Sun, Zhihua Wang, and Baoyong Chi, ‘A 10-b Fourth-Order Quadrature Bandpass Continuous-Time ΣΔ Modulator With 33-MHz Bandwidth for a Dual-Channel GNSS Receiver’, IEEE Transactions on Microwave Theory and Practice, Vol. 65 (4): 1303-1314, first published online 16 February 2017. The version of record is available online at DOI: 10.1109/TMTT.2017.266237, Published by IEEE. © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.A fourth-order quadrature bandpass continuous-time sigma-delta modulator for a dual-channel global navigation satellite system (GNSS) receiver is presented. With a bandwidth (BW) of 33 MHz, the modulator is able to digitalize the downconverted GNSS signals in two adjacent signal bands simultaneously, realizing dual-channel GNSS reception with one receiver channel instead of two independent receiver channels. To maintain the loop-stability of the high-order architecture, any extra loop phase shifting should be minimized. In the system architecture, a feedback and feedforward hybrid architecture is used to implement the fourth-order loop-filter, and a return-to-zero (RZ) feedback after the discrete-time differential operation is introduced into the input of the final integrator to realize the excess loop delay compensation, saving a spare summing amplifier. In the circuit implementation, power-efficient amplifiers with high-frequency active feedforward and antipole-splitting techniques are employed in the active RC integrators, and self-calibrated comparators are used to implement the low-power 3-b quantizers. These power saving techniques help achieve superior figure of merit for the presented modulator. With a sampling rate of 460 MHz, current-steering digital-analog converters are chosen to guarantee high conversion speed. Implemented in only 180-nm CMOS, the modulator achieves 62.1-dB peak signal to noise and distortion ratio, 64-dB dynamic range, and 59.3-dB image rejection ratio, with a BW of 33 MHz, and consumes 54.4 mW from a 1.8 V power supply.Peer reviewe

Design of sigma-delta modulators for analog-to-digital conversion intensively using passive circuits

This thesis presents the analysis, design implementation and experimental evaluation of passiveactive discrete-time and continuous-time Sigma-Delta (ΣΔ) modulators (ΣΔMs) analog-todigital converters (ADCs). Two prototype circuits were manufactured. The first one, a discrete-time 2nd-order ΣΔM, was designed in a 130 nm CMOS technology. This prototype confirmed the validity of the ultra incomplete settling (UIS) concept used for implementing the passive integrators. This circuit, clocked at 100 MHz and consuming 298 μW, achieves DR/SNR/SNDR of 78.2/73.9/72.8 dB, respectively, for a signal bandwidth of 300 kHz. This results in a Walden FoMW of 139.3 fJ/conv.-step and Schreier FoMS of 168 dB. The final prototype circuit is a highly area and power efficient ΣΔM using a combination of a cascaded topology, a continuous-time RC loop filter and switched-capacitor feedback paths. The modulator requires only two low gain stages that are based on differential pairs. A systematic design methodology based on genetic algorithm, was used, which allowed decreasing the circuit’s sensitivity to the circuit components’ variations. This continuous-time, 2-1 MASH ΣΔM has been designed in a 65 nm CMOS technology and it occupies an area of just 0.027 mm2. Measurement results show that this modulator achieves a peak SNR/SNDR of 76/72.2 dB and DR of 77dB for an input signal bandwidth of 10 MHz, while dissipating 1.57 mW from a 1 V power supply voltage. The ΣΔM achieves a Walden FoMW of 23.6 fJ/level and a Schreier FoMS of 175 dB. The innovations proposed in this circuit result, both, in the reduction of the power consumption and of the chip size. To the best of the author’s knowledge the circuit achieves the lowest Walden FOMW for ΣΔMs operating at signal bandwidth from 5 MHz to 50 MHz reported to date

Contribution to the design of continuous -time Sigma - Delta Modulators based on time delay elements

The research carried out in this thesis is focused in the development of a new class of data converters for digital radio. There are two main architectures for communication receivers which perform a digital demodulation. One of them is based on analog demodulation to the base band and digitization of the I/Q components. Another option is to digitize the band pass signal at the output of the IF stage using a bandpass Sigma-Delta modulator. Bandpass Sigma- Delta modulators can be implemented with discrete-time circuits, using switched capacitors or continuous-time circuits. The main innovation introduced in this work is the use of passive transmission lines in the loop filter of a bandpass continuous-time Sigma-Delta modulator instead of the conventional solution with gm-C or LC resonators. As long as transmission lines are used as replacement of a LC resonator in RF technology, it seems compelling that transmission lines could improve bandpass continuous-time Sigma-Delta modulators. The analysis of a Sigma- Delta modulator using distributed resonators has led to a completely new family of Sigma- Delta modulators which possess properties inherited both from continuous-time and discretetime Sigma-Delta modulators. In this thesis we present the basic theory and the practical design trade-offs of this new family of Sigma-Delta modulators. Three demonstration chips have been implemented to validate the theoretical developments. The first two are a proof of concept of the application of transmission lines to build lowpass and bandpass modulators. The third chip summarizes all the contributions of the thesis. It consists of a transmission line Sigma-Delta modulator which combines subsampling techniques, a mismatch insensitive circuitry and a quadrature architecture to implement the IF to digital stage of a receiver

Bandpass electromechanical sigma-delta modulator

Ph.DDOCTOR OF PHILOSOPH

RF MEMS reference oscillators platform for wireless communications

A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40˚C to 85˚C. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillator’s integrated RMS jitter is 106 fs (10 kHz–20 MHz), consuming 850 μA, with startup time is 250μs, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075˚C. The smart temperature sensor consumes only 4.6 μA. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40˚C to 85˚C. The system is built on 32nm CMOS technology using 1.8V IO device

Design and characterization of a low voltage CMOS ASIC for medical instrumentation

The acquisition of biomedical signals requires analogue to digital converters of high resolution, low voltage of power and low consumption. The solution for this need is the use of new sigma delta conversion architectures such as the one tested in this Bachelor Thesis. This work covers the design of the instrumentation necessary for the operation of Application-Specific Integrated Circuit Sigma Delta Analog-to-Digital Converter (ASIC ADC) that is already manufactured and its integration into a Printed Circuit Board (PCB). It also includes the development of the necessary software that facilitates the accomplishment of the necessary tests and the analysis of the data that will allow to characterize the operation of the fabricated prototype. Finally, the results and conclusions of the project will be described. The ASIC to be tested in this Bachelor Thesis consists of a180-nm Complementary Metal-Oxide Semiconductor (CMOS) bandpass ADC developed to fulfil the specifications of a fully-integrated receiver for Magnetic Resonance Imaging (MRI). Integrating an integrated CMOS receiver into a single chip will help improve image quality by avoiding the use of many coaxial cables that are used to connect the Radio Frequency (RF) coils to the scanning hardware. The proposal made is a very simple Low-IF receiver characteristics in which a continuous time Low-IF bandpass ADC is the most efficient architecture. The circuit in continuous time replaces the classic filter only thus, an anti-alias filter would be necessary. In addition, the bandpass filter assists in the attenuation of the quantization noise in the bandwidth of interest, while at the same time the stability of the system is easily achieved due to the selected Low-IF.Ingeniería Biomédic

Interface Circuits for Microsensor Integrated Systems

ca. 200 words; this text will present the book in all promotional forms (e.g. flyers). Please describe the book in straightforward and consumer-friendly terms. [Recent advances in sensing technologies, especially those for Microsensor Integrated Systems, have led to several new commercial applications. Among these, low voltage and low power circuit architectures have gained growing attention, being suitable for portable long battery life devices. The aim is to improve the performances of actual interface circuits and systems, both in terms of voltage mode and current mode, in order to overcome the potential problems due to technology scaling and different technology integrations. Related problems, especially those concerning parasitics, lead to a severe interface design attention, especially concerning the analog front-end and novel and smart architecture must be explored and tested, both at simulation and prototype level. Moreover, the growing demand for autonomous systems gets even harder the interface design due to the need of energy-aware cost-effective circuit interfaces integrating, where possible, energy harvesting solutions. The objective of this Special Issue is to explore the potential solutions to overcome actual limitations in sensor interface circuits and systems, especially those for low voltage and low power Microsensor Integrated Systems. The present Special Issue aims to present and highlight the advances and the latest novel and emergent results on this topic, showing best practices, implementations and applications. The Guest Editors invite to submit original research contributions dealing with sensor interfacing related to this specific topic. Additionally, application oriented and review papers are encouraged.

Bandpass delta-sigma modulators for radio receivers

This thesis concerns discrete-time (DT) bandpass (BP) ΔΣ modulators targeted for intermediate frequency (IF) analog-to-digital (A/D) conversion in radio receivers. The receiver architecture adopted has to be capable of operating with different radio frequencies, channel bandwidths, and modulation techniques. This is necessary in order to achieve an extensive operating area and the possibility of utilizing a local mobile phone standard or a standard suitable for a specific service. The digital IF receiver is a good choice for a multi-mode and multi-band mobile phone receiver, because the signal demodulation and channel filtering are performed in the digital domain. This increases the flexibility of the receiver and relieves the design of the baseband part, but an A/D conversion with high dynamic range and low power dissipation is required. BP ΔΣ modulators are capable of converting a high-frequency narrow band signal and are therefore suitable for signal digitization in an IF receiver. First, the theory of BP ΔΣ modulators is introduced. It has been determined that resonators are the most critical circuit blocks in the implementation of a high performance BP ΔΣ modulator. Different DT resonator topologies are studied and a double-delay (DD) resonator is found to be the best candidate for a high quality resonator. A new DD switched-capacitor (SC) resonator structure has been designed. Furthermore, two evolution versions of the designed SC resonator are presented and their nonidealities are analyzed. The three designed DD SC resonator structures are a main point of the thesis, together with the experimental results. Five different DT BP ΔΣ modulator circuit structures have been implemented and measured. All three of the designed SC resonators are used in the implemented circuits. The experimental work consists of both single-bit and multi-bit structures, as well as both single-loop and cascade architectures. The circuits have been implemented with a 0.35 μm (Bi)CMOS technology and operate with a 3.0 V supply. The measured maximum signal-to-noise-and-distortion ratios (SNDRs) are 78 dB over 270 kHz (GSM), 75 dB over 1.25 MHz (IS-95), 69 dB over 1.762 MHz (DECT), and 48 dB over 3.84 MHz (WCDMA) bandwidths using a 60 MHz IF signal.reviewe

High efficiency delta-sigma modulation data converters

Enabled by continued device scaling in CMOS technology, more and more functions that were previously realized in separate chips are getting integrated on a single chip nowadays. Integration on silicon has opened the door to new portable wireless applications, and initiated a widespread use of these devices in our common everyday life. Wide signal bandwidth, high linearity and dynamic range, and low power dissipation are required of embedded data converters that are the performance-limiting key building blocks of those systems. Thus, power-efficient and highly-linear data conversion over wide range of signal bands is essential to get the full benefits from device scaling. This continued trend keeps innovation in the design of data converter continuing. Traditionally, delta-sigma modulation data converters proved to be very effective in applications where high resolution was necessary in a relatively narrow signal band. There have been active research efforts across academia and industry on the extension of achievable signal bandwidth without compromising the performance of these data converters. In this dissertation, architectural innovations, combined with effective design techniques for delta-sigma modulation data converters, are presented to overcome the associated limitations. The effectiveness of the proposed approaches is demonstrated by test results for the following state-of-the-art prototype designs: (1) a 0.8 V, 2.6 mW, 88 dB dual-channel audio delta-sigma modulation D/A converter with headphone driver; (2) an 88 dB ring-coupled delta-sigma ADC with 1.9 MHz bandwidth and -102.4 dB THD; (3) a multi-cell noise-coupled delta-sigma ADC with 1.9 MHz bandwidth, 88 dB DR, and -98 dB THD; (4) an 8.1 mW, 82 dB self-coupled delta-sigma ADC with 1.9 MHz bandwidth and -97 dB THD; (5) a noise-coupled time-interleaved delta-sigma ADC with 4.2 MHz bandwidth, -98 dB THD, and 79 dB SNDR; (6) a noise-coupled time-interleaved delta-sigma ADC with 2.5 MHz bandwidth, -104 dB THD, and 81 dB SNDR. As an extension of this research, two novel architectures for efficient double-sampling delta-sigma ADCs and improved low-distortion delta-sigma ADC are proposed, and validated by extensive simulations.Keywords: improved low-distortion modulator, time interleaving, data converter, multi-cell ADC, efficient double sampling, noise coupling, delta-sigma modulatio

Low-Power Low-Noise CMOS Analog and Mixed-Signal Design towards Epileptic Seizure Detection

About 50 million people worldwide suffer from epilepsy and one third of them have seizures that are refractory to medication. In the past few decades, deep brain stimulation (DBS) has been explored by researchers and physicians as a promising way to control and treat epileptic seizures. To make the DBS therapy more efficient and effective, the feedback loop for titrating therapy is required. It means the implantable DBS devices should be smart enough to sense the brain signals and then adjust the stimulation parameters adaptively. This research proposes a signal-sensing channel configurable to various neural applications, which is a vital part for a future closed-loop epileptic seizure stimulation system. This doctoral study has two main contributions, 1) a micropower low-noise neural front-end circuit, and 2) a low-power configurable neural recording system for both neural action-potential (AP) and fast-ripple (FR) signals. The neural front end consists of a preamplifier followed by a bandpass filter (BPF). This design focuses on improving the noise-power efficiency of the preamplifier and the power/pole merit of the BPF at ultra-low power consumption. In measurement, the preamplifier exhibits 39.6-dB DC gain, 0.8 Hz to 5.2 kHz of bandwidth (BW), 5.86-μVrms input-referred noise in AP mode, while showing 39.4-dB DC gain, 0.36 Hz to 1.3 kHz of BW, 3.07-μVrms noise in FR mode. The preamplifier achieves noise efficiency factor (NEF) of 2.93 and 3.09 for AP and FR modes, respectively. The preamplifier power consumption is 2.4 μW from 2.8 V for both modes. The 6th-order follow-the-leader feedback elliptic BPF passes FR signals and provides -110 dB/decade attenuation to out-of-band interferers. It consumes 2.1 μW from 2.8 V (or 0.35 μW/pole) and is one of the most power-efficient high-order active filters reported to date. The complete front-end circuit achieves a mid-band gain of 38.5 dB, a BW from 250 to 486 Hz, and a total input-referred noise of 2.48 μVrms while consuming 4.5 μW from the 2.8 V power supply. The front-end NEF achieved is 7.6. The power efficiency of the complete front-end is 0.75 μW/pole. The chip is implemented in a standard 0.6-μm CMOS process with a die area of 0.45 mm^2. The neural recording system incorporates the front-end circuit and a sigma-delta analog-to-digital converter (ADC). The ADC has scalable BW and power consumption for digitizing both AP and FR signals captured by the front end. Various design techniques are applied to the improvement of power and area efficiency for the ADC. At 77-dB dynamic range (DR), the ADC has a peak SNR and SNDR of 75.9 dB and 67 dB, respectively, while consuming 2.75-mW power in AP mode. It achieves 78-dB DR, 76.2-dB peak SNR, 73.2-dB peak SNDR, and 588-μW power consumption in FR mode. Both analog and digital power supply voltages are 2.8 V. The chip is fabricated in a standard 0.6-μm CMOS process. The die size is 11.25 mm^2. The proposed circuits can be extended to a multi-channel system, with the ADC shared by all channels, as the sensing part of a future closed-loop DBS system for the treatment of intractable epilepsy