Chipper: Capacitive Bed Occupancy Sensing for an Intelligent Alarm Clock

What if your alarm clock knew when you got out—and stayed out—of bed? Current alarm clocks happily let you go back to bed after turning them off. In this project, I build an alarm which only stops ringing when you get out bed, and starts ringing again if you lie back in bed. This project uses capacitance to detect bed occupancy. A person on or near the bed creates a tiny, picofarads level increase in capacitance, as seen by a sensor placed under the mattress. A microprocessor interprets this signal, and also drives an audio alarm. Shielding of the sensor and automatic calibration of the sensor ensures the system works for any room and bed

Interface Circuits for Microsensor Integrated Systems

ca. 200 words; this text will present the book in all promotional forms (e.g. flyers). Please describe the book in straightforward and consumer-friendly terms. [Recent advances in sensing technologies, especially those for Microsensor Integrated Systems, have led to several new commercial applications. Among these, low voltage and low power circuit architectures have gained growing attention, being suitable for portable long battery life devices. The aim is to improve the performances of actual interface circuits and systems, both in terms of voltage mode and current mode, in order to overcome the potential problems due to technology scaling and different technology integrations. Related problems, especially those concerning parasitics, lead to a severe interface design attention, especially concerning the analog front-end and novel and smart architecture must be explored and tested, both at simulation and prototype level. Moreover, the growing demand for autonomous systems gets even harder the interface design due to the need of energy-aware cost-effective circuit interfaces integrating, where possible, energy harvesting solutions. The objective of this Special Issue is to explore the potential solutions to overcome actual limitations in sensor interface circuits and systems, especially those for low voltage and low power Microsensor Integrated Systems. The present Special Issue aims to present and highlight the advances and the latest novel and emergent results on this topic, showing best practices, implementations and applications. The Guest Editors invite to submit original research contributions dealing with sensor interfacing related to this specific topic. Additionally, application oriented and review papers are encouraged.

Advanced sensors technology survey

This project assesses the state-of-the-art in advanced or 'smart' sensors technology for NASA Life Sciences research applications with an emphasis on those sensors with potential applications on the space station freedom (SSF). The objectives are: (1) to conduct literature reviews on relevant advanced sensor technology; (2) to interview various scientists and engineers in industry, academia, and government who are knowledgeable on this topic; (3) to provide viewpoints and opinions regarding the potential applications of this technology on the SSF; and (4) to provide summary charts of relevant technologies and centers where these technologies are being developed

Testing of the high accuracy inertial navigation system in the Shuttle Avionics Integration Lab

The description, results, and interpretation is presented of comparison testing between the High Accuracy Inertial Navigation System (HAINS) and KT-70 Inertial Measurement Unit (IMU). The objective was to show the HAINS can replace the KT-70 IMU in the space shuttle Orbiter, both singularly and totally. This testing was performed in the Guidance, Navigation, and Control Test Station (GTS) of the Shuttle Avionics Integration Lab (SAIL). A variety of differences between the two instruments are explained. Four, 5 day test sessions were conducted varying the number and slot position of the HAINS and KT-70 IMUs. The various steps in the calibration and alignment procedure are explained. Results and their interpretation are presented. The HAINS displayed a high level of performance accuracy previously unseen with the KT-70 IMU. The most significant improvement of the performance came in the Tuned Inertial/Extended Launch Hold tests. The HAINS exceeded the 4 hr specification requirement. The results obtained from the SAIL tests were generally well beyond the requirements of the procurement specification

CMOS systems and circuits for sub-degree per hour MEMS gyroscopes

The objective of our research is to develop system architectures and CMOS circuits that interface with high-Q silicon microgyroscopes to implement navigation-grade angular rate sensors. The MEMS sensor used in this work is an in-plane bulk-micromachined mode-matched tuning fork gyroscope (M² – TFG ), fabricated on silicon-on-insulator substrate. The use of CMOS transimpedance amplifiers (TIA) as front-ends in high-Q MEMS resonant sensors is explored. A T-network TIA is proposed as the front-end for resonant capacitive detection. The T-TIA provides on-chip transimpedance gains of 25MΩ, has a measured capacitive resolution of 0.02aF /√Hz at 15kHz, a dynamic range of 104dB in a bandwidth of 10Hz and consumes 400μW of power. A second contribution is the development of an automated scheme to adaptively bias the mechanical structure, such that the sensor is operated in the mode-matched condition. Mode-matching leverages the inherently high quality factors of the microgyroscope, resulting in significant improvement in the Brownian noise floor, electronic noise, sensitivity and bias drift of the microsensor. We developed a novel architecture that utilizes the often ignored residual quadrature error in a gyroscope to achieve and maintain perfect mode-matching (i.e.0Hz split between the drive and sense mode frequencies), as well as electronically control the sensor bandwidth. A CMOS implementation is developed that allows mode-matching of the drive and sense frequencies of a gyroscope at a fraction of the time taken by current state of-the-art techniques. Further, this mode-matching technique allows for maintaining a controlled separation between the drive and sense resonant frequencies, providing a means of increasing sensor bandwidth and dynamic range. The mode-matching CMOS IC, implemented in a 0.5μm 2P3M process, and control algorithm have been interfaced with a 60μm thick M2−TFG to implement an angular rate sensor with bias drift as low as 0.1°/hr ℃ the lowest recorded to date for a silicon MEMS gyro.Ph.D.Committee Chair: Farrokh Ayazi; Committee Member: Jennifer Michaels; Committee Member: Levent Degertekin; Committee Member: Paul Hasler; Committee Member: W. Marshall Leac

Contribution to time domain readout circuits design for multi-standard sensing system for low voltage supply and high-resolution applications

Mención Internacional en el título de doctorThis research activity has the purpose of open new possibilities in the design of capacitance-to-digital converters (CDCs) by developing a solution based on time domain conversion. This can be applied to applications related with the Internet-of-Things (IoT). These applications are present in any electronic devices where sensing is needed. To be able to reduce the area of the whole system with the required performance, micro-electromechanical systems (MEMS) sensors are used in these applications. We propose a new family of sensor readout electronics to be integrated with MEMS sensors. Within the time domain converters, Dual Slope (DS) topology is very interesting to explore a new compromise between performances, area and power consumption. DS topology has been extensively used in instrumentation. The simplicity and robustness of the blocks inside classical DS converters it is the main advantage. However, they are not efficient for applications where higher bandwidth is required. To extend the bandwidth, DS converters have been introduced into ΔΣ loops. This topology has been named as integrating converters. They increase the bandwidth compare to classical DS architecture but at the expense of higher complexity. In this work we propose the use of a new family of DS converters that keep the advantages of the classical architecture and introduce noise shaping. This way the bandwidth is increased without extra blocks. The Self-Compensated noise-shaped DS converter (the name given to the new topology) keeps the signal transfer function (STF) and the noise transfer function (NTF) of Integrating converters. However, we introduce a new arrangement in the core of the converter to do noise shaping without extra circuitry. This way the simplicity of the architecture is preserved. We propose to use the Self-Compensated DS converter as a CDC for MEMS sensors. This work makes a study of the best possible integration of the two blocks to keep the signal integrity considering the electromechanical behavior of the sensor. The purpose of this front-end is to be connected to any kind of capacitive MEMS sensor. However, to prove the concepts developed in this thesis the architecture has been connected to a pressure MEMS sensor. An experimental prototype was implemented in 130-nm CMOS process using the architecture mentioned before. A peak SNR of 103.9 dB (equivalent to 1Pa) has been achieved within a time measurement of 20 ms. The final prototype has a power consumption of 220 μW with an effective area of 0.317 mm2. The designed architecture shows good performance having competitive numbers against high resolution topologies in amplitude domain.Esta actividad de investigación tiene el propósito de explorar nuevas posibilidades en el diseño de convertidores de capacitancia a digital (CDC) mediante el desarrollo de una solución basada en la conversión en el dominio del tiempo. Estos convertidores se pueden utilizar en aplicaciones relacionadas con el mercado del Internet-de-las-cosas (IoT). Hoy en día, estas aplicaciones están presentes en cualquier dispositivo electrónico donde se necesite sensar una magnitud. Para poder reducir el área de todo el sistema con el rendimiento requerido, se utilizan sensores de sistemas micro-electromecánicos (MEMS) en estas aplicaciones. Proponemos una nueva familia de electrónica de acondicionamiento para integrar con sensores MEMS. Dentro de los convertidores de dominio de tiempo, la topología del doble-rampa (DS) es muy interesante para explorar un nuevo compromiso entre rendimiento, área y consumo de energía. La topología de DS se ha usado ampliamente en instrumentación. La simplicidad y la solidez de los bloques dentro de los convertidores DS clásicos es la principal ventaja. Sin embargo, no son eficientes para aplicaciones donde se requiere mayor ancho de banda. Para ampliar el ancho de banda, los convertidores DS se han introducido en bucles ΔΣ. Esta topología ha sido nombrada como Integrating converters. Esta topología aumenta el ancho de banda en comparación con la arquitectura clásica de DS, pero a expensas de una mayor complejidad. En este trabajo, proponemos el uso de una nueva familia de convertidores DS que mantienen las ventajas de la arquitectura clásica e introducen la configuración del ruido. De esta forma, el ancho de banda aumenta sin bloques adicionales. El convertidor Self-Compensated noise-shaped DS (el nombre dado a la nueva topología) mantiene la función de transferencia de señal (STF) y la función de transferencia de ruido (NTF) de los Integrating converters. Sin embargo, presentamos una nueva topología en el núcleo del convertidor para conformar el ruido sin circuitos adicionales. De esta manera, se preserva la simplicidad de la arquitectura. Proponemos utilizar el Self-Compensated noise-shaped DS como un CDC para sensores MEMS. Este trabajo hace un estudio de la mejor integración posible de los dos bloques para mantener la integridad de la señal considerando el comportamiento electromecánico del sensor. El propósito de este circuito de acondicionamiento es conectarse a cualquier tipo de sensor MEMS capacitivo. Sin embargo, para demostrar los conceptos desarrollados en esta tesis, la arquitectura se ha conectado a un sensor MEMS de presión. Se ha implementado dos prototipos experimentales en un proceso CMOS de 130-nm utilizando la arquitectura mencionada anteriormente. Se ha logrado una relación señal-ruido máxima de 103.9 dB (equivalente a 1 Pa) con un tiempo de medida de 20 ms. El prototipo final tiene un consumo de energía de 220 μW con un área efectiva de 0.317 mm2. La arquitectura diseñada muestra un buen rendimiento comparable con las arquitecturas en el dominio de la amplitud que muestran resoluciones equivalentes.Programa Oficial de Doctorado en Ingeniería Eléctrica, Electrónica y AutomáticaPresidente: Pieter Rombouts.- Secretario: Alberto Rodríguez Pérez.- Vocal: Dietmar Strãußnig

Sub-Femto-Farad Resolution Electronic Interfaces for Integrated Capacitive Sensors: A Review

Capacitance detection is a universal transduction mechanism used in a wide variety of sensors and applications. It requires an electronic front-end converting the capacitance variation into another more convenient physical variable, ultimately determining the performance of the whole sensor. In this paper we present a comprehensive review of the different signal conditioning front-end topologies targeted in particular at sub-femtofarad resolution. Main design equations and analysis of the limits due to noise are reported in order to provide the designer with guidelines for choosing the most suitable topology according to the main design specifications, namely energy consumption, area occupation, measuring time and resolution. A data-driven comparison of the different solutions in literature is also carried out revealing that resolution, measuring time, area occupation and energy/conversion lower than 100 aF, 1 ms 0.1 mm2, and 100 pJ/conv. can be obtained by capacitance to digital topologies, which therefore allow to get the best compromise among all design specifications

Integrated Circuits and Systems for Smart Sensory Applications

Connected intelligent sensing reshapes our society by empowering people with increasing new ways of mutual interactions. As integration technologies keep their scaling roadmap, the horizon of sensory applications is rapidly widening, thanks to myriad light-weight low-power or, in same cases even self-powered, smart devices with high-connectivity capabilities. CMOS integrated circuits technology is the best candidate to supply the required smartness and to pioneer these emerging sensory systems. As a result, new challenges are arising around the design of these integrated circuits and systems for sensory applications in terms of low-power edge computing, power management strategies, low-range wireless communications, integration with sensing devices. In this Special Issue recent advances in application-specific integrated circuits (ASIC) and systems for smart sensory applications in the following five emerging topics: (I) dedicated short-range communications transceivers; (II) digital smart sensors, (III) implantable neural interfaces, (IV) Power Management Strategies in wireless sensor nodes and (V) neuromorphic hardware

MEMS Accelerometers

Micro-electro-mechanical system (MEMS) devices are widely used for inertia, pressure, and ultrasound sensing applications. Research on integrated MEMS technology has undergone extensive development driven by the requirements of a compact footprint, low cost, and increased functionality. Accelerometers are among the most widely used sensors implemented in MEMS technology. MEMS accelerometers are showing a growing presence in almost all industries ranging from automotive to medical. A traditional MEMS accelerometer employs a proof mass suspended to springs, which displaces in response to an external acceleration. A single proof mass can be used for one- or multi-axis sensing. A variety of transduction mechanisms have been used to detect the displacement. They include capacitive, piezoelectric, thermal, tunneling, and optical mechanisms. Capacitive accelerometers are widely used due to their DC measurement interface, thermal stability, reliability, and low cost. However, they are sensitive to electromagnetic field interferences and have poor performance for high-end applications (e.g., precise attitude control for the satellite). Over the past three decades, steady progress has been made in the area of optical accelerometers for high-performance and high-sensitivity applications but several challenges are still to be tackled by researchers and engineers to fully realize opto-mechanical accelerometers, such as chip-scale integration, scaling, low bandwidth, etc