Exploiting the bulk-driven approach in CMOS analogue amplifier design

This thesis presents a collection of new novel techniques using the bulk-driven approach, which can lead to performance enhancement in the field of CMOS analogue amplifier design under the very low-supply voltage constraints. In this thesis, three application areas of the bulk-driven approach are focused – at the input-stage of differential pairs, at the source followers, and at the cascode devices. For the input stage of differential pairs, this thesis proposes two new novel circuit design techniques. One of them utilises the concept of the replica-biased scheme in order to solve the non-linearity and latch-up issues, which are the potential problems that come along with the bulk-driven approach. The other proposed circuit design technique utilises the flipped voltage scheme and the Quasi-Floating Gate technique in order to achieve low-power high-speed performances, and furthermore the reversed-biased diode concept to overcome the issue of degraded input impedance characteristics that come along with the bulk-driven approach. Applying the bulk-driven approach in source followers is a new type of circuit blocks in CMOS analogue field, in which to the author’s best knowledge has not been proposed at any literatures in the past. This thesis presents the bulk-driven version of the flipped voltage followers and super source followers, which can lead to eliminating the DC level shift. Furthermore, a technique for programming the DC level shift less than the threshold voltage of a MOSFET, which cannot be achieved by conventional types of source followers, is presented. The effectiveness of the cascode device using the bulk-driven approach is validated by implementing it in a complete schematics design of a fully differential bulk-driven operational transcoductance amplifier (OTA). This proposal leads to solving the lowtranconductance problem of a bulk-driven differential pair, and in effect the open loop gain of the OTA exceeds 60dB using a 0.35μm CMOS technology. The final part of this thesis provides the study result of the input capacitance of a bulk-driven buffer. To verify the use of the BSIM3 MOSFET model in the simulation for predicting the input capacitance, the measurement data of the fabricated device are compared with the postlayout simulation results

Low power output-capacitorless class-AB CMOS LDO regulator

Peer ReviewedPostprint (published version

Low Voltage Low Power Analogue Circuits Design

Disertační práce je zaměřena na výzkum nejběžnějších metod, které se využívají při návrhu analogových obvodů s využití nízkonapěťových (LV) a nízkopříkonových (LP) struktur. Tyto LV LP obvody mohou být vytvořeny díky vyspělým technologiím nebo také využitím pokročilých technik návrhu. Disertační práce se zabývá právě pokročilými technikami návrhu, především pak nekonvenčními. Mezi tyto techniky patří využití prvků s řízeným substrátem (bulk-driven - BD), s plovoucím hradlem (floating-gate - FG), s kvazi plovoucím hradlem (quasi-floating-gate - QFG), s řízeným substrátem s plovoucím hradlem (bulk-driven floating-gate - BD-FG) a s řízeným substrátem s kvazi plovoucím hradlem (quasi-floating-gate - BD-QFG). Práce je také orientována na možné způsoby implementace známých a moderních aktivních prvků pracujících v napěťovém, proudovém nebo mix-módu. Mezi tyto prvky lze začlenit zesilovače typu OTA (operational transconductance amplifier), CCII (second generation current conveyor), FB-CCII (fully-differential second generation current conveyor), FB-DDA (fully-balanced differential difference amplifier), VDTA (voltage differencing transconductance amplifier), CC-CDBA (current-controlled current differencing buffered amplifier) a CFOA (current feedback operational amplifier). Za účelem potvrzení funkčnosti a chování výše zmíněných struktur a prvků byly vytvořeny příklady aplikací, které simulují usměrňovací a induktanční vlastnosti diody, dále pak filtry dolní propusti, pásmové propusti a také univerzální filtry. Všechny aktivní prvky a příklady aplikací byly ověřeny pomocí PSpice simulací s využitím parametrů technologie 0,18 m TSMC CMOS. Pro ilustraci přesného a účinného chování struktur je v disertační práci zahrnuto velké množství simulačních výsledků.The dissertation thesis is aiming at examining the most common methods adopted by analog circuits' designers in order to achieve low voltage (LV) low power (LP) configurations. The capability of LV LP operation could be achieved either by developed technologies or by design techniques. The thesis is concentrating upon design techniques, especially the non–conventional ones which are bulk–driven (BD), floating–gate (FG), quasi–floating–gate (QFG), bulk–driven floating–gate (BD–FG) and bulk–driven quasi–floating–gate (BD–QFG) techniques. The thesis also looks at ways of implementing structures of well–known and modern active elements operating in voltage–, current–, and mixed–mode such as operational transconductance amplifier (OTA), second generation current conveyor (CCII), fully–differential second generation current conveyor (FB–CCII), fully–balanced differential difference amplifier (FB–DDA), voltage differencing transconductance amplifier (VDTA), current–controlled current differencing buffered amplifier (CC–CDBA) and current feedback operational amplifier (CFOA). In order to confirm the functionality and behavior of these configurations and elements, they have been utilized in application examples such as diode–less rectifier and inductance simulations, as well as low–pass, band–pass and universal filters. All active elements and application examples have been verified by PSpice simulator using the 0.18 m TSMC CMOS parameters. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of structures.

Exploiting the bulk-driven approach in CMOS analogue amplifier design

This thesis presents a collection of new novel techniques using the bulk-driven approach, which can lead to performance enhancement in the field of CMOS analogue amplifier design under the very low-supply voltage constraints. In this thesis, three application areas of the bulk-driven approach are focused – at the input-stage of differential pairs, at the source followers, and at the cascode devices. For the input stage of differential pairs, this thesis proposes two new novel circuit design techniques. One of them utilises the concept of the replica-biased scheme in order to solve the non-linearity and latch-up issues, which are the potential problems that come along with the bulk-driven approach. The other proposed circuit design technique utilises the flipped voltage scheme and the Quasi-Floating Gate technique in order to achieve low-power high-speed performances, and furthermore the reversed-biased diode concept to overcome the issue of degraded input impedance characteristics that come along with the bulk-driven approach. Applying the bulk-driven approach in source followers is a new type of circuit blocks in CMOS analogue field, in which to the author’s best knowledge has not been proposed at any literatures in the past. This thesis presents the bulk-driven version of the flipped voltage followers and super source followers, which can lead to eliminating the DC level shift. Furthermore, a technique for programming the DC level shift less than the threshold voltage of a MOSFET, which cannot be achieved by conventional types of source followers, is presented. The effectiveness of the cascode device using the bulk-driven approach is validated by implementing it in a complete schematics design of a fully differential bulk-driven operational transcoductance amplifier (OTA). This proposal leads to solving the lowtranconductance problem of a bulk-driven differential pair, and in effect the open loop gain of the OTA exceeds 60dB using a 0.35μm CMOS technology. The final part of this thesis provides the study result of the input capacitance of a bulk-driven buffer. To verify the use of the BSIM3 MOSFET model in the simulation for predicting the input capacitance, the measurement data of the fabricated device are compared with the postlayout simulation results

A Survey of Non-conventional Techniques for Low-voltage Low-power Analog Circuit Design

Designing integrated circuits able to work under low-voltage (LV) low-power (LP) condition is currently undergoing a very considerable boom. Reducing voltage supply and power consumption of integrated circuits is crucial factor since in general it ensures the device reliability, prevents overheating of the circuits and in particular prolongs the operation period for battery powered devices. Recently, non-conventional techniques i.e. bulk-driven (BD), floating-gate (FG) and quasi-floating-gate (QFG) techniques have been proposed as powerful ways to reduce the design complexity and push the voltage supply towards threshold voltage of the MOS transistors (MOST). Therefore, this paper presents the operation principle, the advantages and disadvantages of each of these techniques, enabling circuit designers to choose the proper design technique based on application requirements. As an example of application three operational transconductance amplifiers (OTA) base on these non-conventional techniques are presented, the voltage supply is only ±0.4 V and the power consumption is 23.5 µW. PSpice simulation results using the 0.18 µm CMOS technology from TSMC are included to verify the design functionality and correspondence with theory

Low-Voltage Analog Circuit Design Using the Adaptively Biased Body-Driven Circuit Technique

The scaling of MOSFET dimensions and power supply voltage, in conjunction with an increase in system- and circuit-level performance requirements, are the most important factors driving the development of new technologies and design techniques for analog and mixed-signal integrated circuits. Though scaling has been a fact of life for analog circuit designers for many years, the approaching 1-V and sub-1-V power supplies, combined with applications that have increasingly divergent technology requirements, means that the analog and mixed-signal IC designs of the future will probably look quite different from those of the past. Foremost among the challenges that analog designers will face in highly scaled technologies are low power supply voltages, which limit dynamic range and even circuit functionality, and ultra-thin gate oxides, which give rise to significant levels of gate leakage current. The goal of this research is to develop novel analog design techniques which are commensurate with the challenges that designers will face in highly scaled CMOS technologies. To that end, a new and unique body-driven design technique called adaptive gate biasing has been developed. Adaptive gate biasing is a method for guaranteeing that MOSFETs in a body-driven simple current mirror, cascode current mirror, or regulated cascode current source are biased in saturation—independent of operating region, temperature, or supply voltage—and is an enabling technology for high-performance, low-voltage analog circuits. To prove the usefulness of the new design technique, a body-driven operational amplifier that heavily leverages adaptive gate biasing has been developed. Fabricated on a 3.3-V/0.35-μm partially depleted silicon-onv-insulator (PD-SOI) CMOS process, which has nMOS and pMOS threshold voltages of 0.65 V and 0.85 V, respectively, the body-driven amplifier displayed an open-loop gain of 88 dB, bandwidth of 9 MHz, and PSRR greater than 50 dB at 1-V power supply

Circuits for Analog Signal Processing Employing Unconventional Active Elements

Disertační práce se zabývá zaváděním nových struktur moderních aktivních prvků pracujících v napěťovém, proudovém a smíšeném režimu. Funkčnost a chování těchto prvků byly ověřeny prostřednictvím SPICE simulací. V této práci je zahrnuta řada simulací, které dokazují přesnost a dobré vlastnosti těchto prvků, přičemž velký důraz byl kladen na to, aby tyto prvky byly schopny pracovat při nízkém napájecím napětí, jelikož poptávka po přenosných elektronických zařízeních a implantabilních zdravotnických přístrojích stále roste. Tyto přístroje jsou napájeny bateriemi a k tomu, aby byla prodloužena jejich životnost, trend navrhování analogových obvodů směřuje k stále většímu snižování spotřeby a napájecího napětí. Hlavním přínosem této práce je návrh nových CMOS struktur: CCII (Current Conveyor Second Generation) na základě BD (Bulk Driven), FG (Floating Gate) a QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) na základě FG, transkonduktor na základě nové techniky BD_QFG (Bulk Driven_Quasi Floating Gate), CCCDBA (Current Controlled Current Differencing Buffered Amplifier) na základě GD (Gate Driven), VDBA (Voltage Differencing Buffered Amplifier) na základě GD a DBeTA (Differential_Input Buffered and External Transconductance Amplifier) na základě BD. Dále je uvedeno několik zajímavých aplikací užívajících výše jmenované prvky. Získané výsledky simulací odpovídají teoretickým předpokladům.The dissertation thesis deals with implementing new structures of modern active elements working in voltage_, current_, and mixed mode. The functionality and behavior of these elements have been verified by SPICE simulation. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of those elements. However, a big attention to implement active elements by utilizing LV LP (Low Voltage Low Power) techniques is given in this thesis. This attention came from the fact that growing demand of portable electronic equipments and implantable medical devices are pushing the development towards LV LP integrated circuits because of their influence on batteries lifetime. More specifically, the main contribution of this thesis is to implement new CMOS structures of: CCII (Current Conveyor Second Generation) based on BD (Bulk Driven), FG (Floating Gate) and QFG (Quasi Floating Gate); DVCC (Differential Voltage Current Conveyor) based on FG; Transconductor based on new technique of BD_QFG (Bulk Driven_Quasi Floating Gate); CCCDBA (Current Controlled Current Differencing Buffered Amplifier) based on conventional GD (Gate Driven); VDBA (Voltage Differencing Buffered Amplifier) based on GD. Moreover, defining new active element i.e. DBeTA (Differential_Input Buffered and External Transconductance Amplifier) based on BD is also one of the main contributions of this thesis. To confirm the workability and attractive properties of the proposed circuits many applications were exhibited. The given results agree well with the theoretical anticipation.

An 18GHz Wide-Band Buffer

Recent developments in wireless communication and systems, such as sixth-generation (6G), radar and instrumentation have led to massive use of high-frequency carriers. As a result, there is a high demand for Analog-to-Digital Converters (ADCs) in direct-conversion architectures with high bandwidth, high-resolution, and with the highest possible power efficiency and spectral purity. A potential performance enhancement of an ADC can be realized by adding a voltage Input Buffer (IB). To increase the IB bandwidth and decrease the distortion from the nonlinear sampling circuit, a low output impedance is required. Therefore, to achieve low output impedance, it is necessary to dissipate power that is often equal to or greater than the power dissipated in the rest of the ADC blocks combined, since the output impedance is inversely proportional to the bias current. Consequently, input buffers are one of the most "power-hungry" building blocks of any direct receiver chain. In recent years, due to the high ADC resolution and quantization range, the existing approaches use IBs with supply voltages above the nominal rails, for instance, 2.5 or 4.0 V, to increase the linearity and to not limit the ADC output swing. However, it inherently creates reliability and robustness issues. This work investigates several different input buffers implemented in 7 nm FinFET technology with 1.8V of supply voltage in which a one pico farad of sampling capacitance is driven. The study starts by exploring four single-stage topologies in thick gate devices with and without linearity techniques, for example, the drain-source voltage "bootstrap" technique. Moreover, two bandwidth extension techniques are introduced, for instance, the Bridge T-coil with Series Peaking and the Distributed Approach. Lastly, two-stage IB architectures with thick oxide devices together with thin oxide devices are implemented. Finally, the new solutions presented meet the requirements by exhibiting more than 18 GHz of bandwidth with a linearity (IIP3) higher than 16.3 dBm, and a DC power consumption lower than 178.2 mW without compromising reliability and robustness issues.Os mais recentes desenvolvimentos nos sistemas de comunicação sem fios, como a sexta geração (6G) de redes móveis, levaram ao uso massivo de portadoras de alta frequência. Com efeito, é crescente a demanda por conversores analógico-digital (ADCs) nas arquiteturas de conversão direta, com elevada largura de banda, de alta resolução, com um baixo consumo de energia e com uma elevada linearidade. Uma potencial melhoria no desempenho do ADC pode ser alcançada através de um input buffer (IB). Para aumentar a largura de banda do IB e diminuir a distorção causada pelo circuito de amostragem é necessária uma baixa impedância de saída. Sendo a impedância de saída inversamente proporcional à corrente de polarização, para alcançar umaimpedância de saída baixa é essencial dissiparpotência que muitas das vezes é igualou superior à soma da potência consumida no resto dos blocos do ADC. Consequentemente, o input buffer é um dos blocos da cadeia recetora que mais energia consume. Nos últimos anos, devido à elevada resolução do ADC, as abordagens existentes usam input buffers com tensões de alimentação superiores à tensão nominal de alimentação, por exemplo, 2.5 ou 4.0 V, de forma a aumentar a linearidade e não limitar a tensão saída do ADC. Porém, inerentemente surgem questões de fiabilidade e robustez. Neste contexto, o escopo do presente trabalho é investigar diversos input buffers implementados em tecnologia 7 nm FinFET com 1.8V de tensão de alimentação e com uma capacidade de carga de um pico farad. O estudo começa por explorar quatro topologias de input buffer com dispositivos de grandes dimensões, com e sem técnicas de linearidade, nomeadamente, a técnica que força a tensão dreno-fonte a ser constante. Ademais, são introduzidas duas técnicas que aumentam a largura de banda, The Bridge T-coil com Series Peaking e a Distributed Approach. Finalmente, são implementadas arquiteturas de input buffer com dois andares em dispositivos de pequenas e grandes dimensões. Por último, são apresentadas novas soluções que cumprem inteiramente as especificações, uma vez que exibem uma largura de banda maior que 18 GHz com uma linearidade (IIP3) superior 16.3 dBm e um consumo de potência inferior a 178.2mW, sem comprometer a fiabilidade e a robustez dos dispositivos

Utilizing Unconventional CMOS Techniques for Low Voltage Low Power Analog Circuits Design for Biomedical Applications

Tato disertační práce se zabývá navržením nízkonapěťových, nízkopříkonových analogových obvodů, které používají nekonvenční techniky CMOS. Lékařská zařízení na bateriové napájení, jako systémy pro dlouhodobý fyziologický monitoring, přenosné systémy, implantovatelné systémy a systémy vhodné na nošení, musí být male a lehké. Kromě toho je nutné, aby byly tyto systémy vybaveny baterií s dlouhou životností. Z tohoto důvodu převládají v biomedicínských aplikacích tohoto typu nízkopříkonové integrované obvody. Nekonvenční techniky jako např. využití transistorů s řízeným substrátem (Bulk-Driven “BD”), s plovoucím hradlem (Floating-Gate “FG”), s kvazi plovoucím hradlem (Quasi-Floating-Gate “QFG”), s řízeným substrátem s plovoucím hradlem (Bulk-Driven Floating-Gate “BD-FG”) a s řízeným substrátem s kvazi plovoucím hradlem (Bulk-Driven Quasi-Floating-Gate “BD-QFG”), se v nedávné době ukázaly jako efektivní prostředek ke zjednodušení obvodového zapojení a ke snížení velikosti napájecího napětí směrem k prahovému napětí u tranzistorů MOS (MOST). V práci jsou podrobně představeny nejdůležitější charakteristiky nekonvenčních technik CMOS. Tyto techniky byly použity pro vytvoření nízko napěťových a nízko výkonových CMOS struktur u některých aktivních prvků, např. Operational Transconductance Amplifier (OTA) založené na BD, FG, QFG, a BD-QFG techniky; Tunable Transconductor založený na BD MOST; Current Conveyor Transconductance Amplifier (CCTA) založený na BD-QFG MOST; Z Copy-Current Controlled-Current Differencing Buffered Amplifier (ZC-CC-CDBA) založený na BD MOST; Winner Take All (WTA) and Loser Take All (LTA) založený na BD MOST; Fully Balanced Four-Terminal Floating Nullor (FBFTFN) založený na BD-QFG technice. Za účelem ověření funkčnosti výše zmíněných struktur, byly tyto struktury použity v několika aplikacích. Výkon navržených aktivních prvků a příkladech aplikací je ověřován prostřednictvím simulačních programů PSpice či Cadence za použití technologie 0.18 m CMOS.This doctoral thesis deals with designing ultra-low-voltage (LV) low-power (LP) analog circuits utilizing the unconventional CMOS techniques. Battery powered medical devices such as; long term physiological monitoring, portable, implantable, and wearable systems need to be small and lightweight. Besides, long life battery is essential need for these devices. Thus, low-power integrated circuits are always paramount in such biomedical applications. Recently, unconventional CMOS techniques i.e. Bulk-Driven (BD), Floating-Gate (FG), Quasi-Floating-Gate (QFG), Bulk-Driven Floating-Gate (BD-FG) and Bulk-Driven Quasi-Floating-Gate (BD-QFG) MOS transistors (MOSTs) have revealed as effective devices to reduce the circuit complexity and push the voltage supply of the circuit towards threshold voltage of the MOST. In this work, the most important features of the unconventional CMOS techniques are discussed in details. These techniques have been utilized to perform ultra-LV LP CMOS structures of several active elements i.e. Operational Transconductance Amplifier (OTA) based on BD, FG, QFG, and BD-QFG techniques; Tunable Transconductor based on BD MOST; Current Conveyor Transconductance Amplifier (CCTA) based on BD-QFG MOST; Z Copy-Current Controlled-Current Differencing Buffered Amplifier (ZC-CC-CDBA) based on BD MOST; Winner Take All (WTA) and Loser Take All (LTA) based on BD MOST; Fully Balanced Four-Terminal Floating Nullor (FBFTFN) based on BD-QFG technique. Moreover, to verify the workability of the proposed structures, they were employed in several applications. The performance of the proposed active elements and their applications were investigated through PSpice or Cadence simulation program using 0.18 m CMOS technology.