Thermal stability of the cu-ceo2 interface on silica and alumina, and its relation with activity in the oxidation reaction of co and the decomposition of n2o

Indexación: Scopus; Scielo.The effect of the support on the formation of the Cu-CeO2 interface and its thermal stability after calcination at 500, 700 and 900 °C is studied. The supports used are SiO2, because of its inert character, and Al2O3, because it can interact with the Cu and Ce species on the surface. The catalysts were characterized by BET, XRD, UV-vis DRS, and TPR with H2. The catalytic activity in the CO oxidation reactions with O2 at low temperature and the decomposition of N2O were selected to visualize the effect of temperature on the concentration of Cu-CeO2 interfacial sites. The results show that at a calcination temperature of 500 °C the formation of the Cu-CeO2 interface is favored over the SiO2 support. However, the stability of the Cu-CeO2 interface on SiO2 is much lower than on Al2O3, causing a substantial decrease of the interfacial sites calcining at 700 °C, and segregation of the Cu and Ce species on the surface of the silica, with complete loss of the catalytic activity in both reactions when calcining at 900 °C. In contrast, on alumina the Cu-CeO2 interface is more stable and presents a significant catalytic activity in both reactions, even when calcining at 900 °C. The characterization results show that the sintering process of Cu species and CeO2 particles is less on the alumina support due to the greater interaction of the Cu and Ce with this support. © 2018 Sociedad Chilena de Quimica.all rights reserved.https://scielo.conicyt.cl/scielo.php?script=sci_arttext&pid=S0717-97072018000304102&lng=en&nrm=iso&tlng=e

The Reactivity of MgB2 with Common Substrate and Electronic Materials

The reactivity of MgB2 with powdered forms of common substrate and electronic materials is reported. Reaction temperatures between 600 C and 800 C, encompassing the range commonly employed in thin-film fabrication, were studied. The materials tested for reactivity were ZrO2, yttria stabilized zirconia (YSZ), MgO, Al2O3, SiO2, SrTiO3, TiN, TaN, AlN, Si, and SiC. At 600 C, MgB2 reacted only with SiO2 and Si. At 800 C, however, reactions were observed for MgB2 with Al2O3, SiO2, Si, SiC, and SrTiO3. The Tc of MgB2 decreased in the reactions with SiC and Al2O3.Comment: 5 figure

Hydrothermal stability of Ru/SiO2-C: A promising catalyst for biomass processing through liquid-phase reactions

In this work, structural and morphological properties of SiO2-C composite material to be used as support for catalysts in the conversion of biomass-derived oxygenated hydrocarbons, such as glycerol, were investigated in liquid water under various temperatures conditions. The results show that this material does not lose surface area, and the hot liquid water does not generate changes in the structure. Neither change in relative concentrations of oxygen functional groups nor in Si/C ratio due to hydrothermal treatment was revealed by X-ray photoelectron spectroscopy (XPS) analysis. Raman analysis showed that the material is made of a disordered graphitic structure in an amorphous silica matrix, which remains stable after hydrothermal treatment. Results of the hydrogenolysis of glycerol using a Ru/SiO2-C catalyst indicate that the support gives more stability to the active phase than a Ru/SiO2 consisting of commercial silica

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

Insulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical fields. Two-dimensional (2D) layered materials have superb electronic, physical, chemical, thermal, and optical properties, and they can be effectively used to provide additional performances, such as flexibility and transparency. 2D layered insulators are called to be essential in future electronic devices, but their reliability, degradation kinetics, and dielectric breakdown (BD) process are still not understood. In this work, the dielectric breakdown process of multilayer hexagonal boron nitride (h-BN) is analyzed on the nanoscale and on the device level, and the experimental results are studied via theoretical models. It is found that under electrical stress, local charge accumulation and charge trapping/detrapping are the onset mechanisms for dielectric BD formation. By means of conductive atomic force microscopy, the BD event was triggered at several locations on the surface of different dielectrics (SiO2, HfO2, Al2O3, multilayer h-BN, and monolayer h-BN); BD-induced hillocks rapidly appeared on the surface of all of them when the BD was reached, except in monolayer h-BN. The high thermal conductivity of h-BN combined with the one-atom-thick nature are genuine factors contributing to heat dissipation at the BD spot, which avoids self-accelerated and thermally driven catastrophic BD. These results point to monolayer h-BN as a sublime dielectric in terms of reliability, which may have important implications in future digital electronic devices.Fil: Jiang, Lanlan. Soochow University; ChinaFil: Shi, Yuanyuan. Soochow University; China. University of Stanford; Estados UnidosFil: Hui, Fei. Soochow University; China. Massachusetts Institute of Technology; Estados UnidosFil: Tang, Kechao. University of Stanford; Estados UnidosFil: Wu, Qian. Soochow University; ChinaFil: Pan, Chengbin. Soochow University; ChinaFil: Jing, Xu. Soochow University; China. University of Texas at Austin; Estados UnidosFil: Uppal, Hasan. University of Manchester; Reino UnidoFil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Lu, Guangyuan. Chinese Academy of Sciences; República de ChinaFil: Wu, Tianru. Chinese Academy of Sciences; República de ChinaFil: Wang, Haomin. Chinese Academy of Sciences; República de ChinaFil: Villena, Marco A.. Soochow University; ChinaFil: Xie, Xiaoming. Chinese Academy of Sciences; República de China. ShanghaiTech University; ChinaFil: McIntyre, Paul C.. University of Stanford; Estados UnidosFil: Lanza, Mario. Soochow University; Chin

Transfer of Graphene with Protective Oxide Layers

Transfer of graphene, grown by Chemical Vapor Deposition (CVD), to a substrate of choice, typically involves deposition of a polymeric layer (typically, poly(methyl methacrylate, PMMA or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. Here we study a transfer of graphene with a protective thin oxide layer. The thin oxide layer is grown by Atomic Deposition Layer (ALD) on the graphene right after the growth stage on Cu foils. One can further aid the oxide-graphene transfer by depositing a very thin polymer layer on top of the composite (much thinner than the usual thickness) following by a more aggressive polymeric removal methods, thus leaving the graphene intact. We report on the nucleation growth process of alumina and hafnia films on the graphene, their resulting strain and on their optical transmission. We suggest that hafnia is a better oxide to coat the graphene than alumina in terms of uniformity and defects.Comment: 13 pgs, 13 figure

Synthesis and characterization of spherical amorphous alumo-silicate nanoparticles using RF thermal plasma method

The RF thermal plasma synthesis route was used for the preparation of alumo-silicate spherical particles. Homogeneous solid mixtures of raw materials (Al2O3, SiO2 and KOH) were used as precursors. SiO2 powders with different particle sizes (6 μm and 40 μm) were taken for this synthesis. For the characterization of obtained materials, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray powder diffraction (XRD) analysis, infrared spectroscopy (FTIR) and thermogravimetric analysis (TG/DTA) were used. Nanosized amorphous ceramic particles were formed via two-step RF thermal plasma processing. It was demonstrated that the size of the SiO2 particles plays a significant role in the formation of the alumo-silicate nanoparticles