Characterization and Modeling of the Threshold Voltage Instability in p-Gate GaN HEMTs

The p-gate GaN HEMT is a modern power semiconductor transistor capable of overcoming the switching speed limitation of conventional Silicon-based technologies. However, the GaN HEMT is a fairly new technology that still suffers undesired effects that affect its operation. Nowadays, the most prominent effects are the shift and instability of the threshold voltage Vth, caused by capacitive coupling into the gate stack as well as trapping, accumulation, and depletion of carriers. In this study, an experimental characterization of the Vth behavior is executed and subsequently used to develop a physically-based compact model. For this purpose, a custom setup is developed capable of high-resolution transient measurements for pulse lengths ranging from 100 ns up to 100 s. Utilizing the setup, commercially available state-of-the-art p-gate GaN HEMTs are investigated, showing a Vth shift and instability that appears relevant up to the nominal operation. The experimental results show that the drain-source voltage VDS yields a Vth shift, which, when applied for long durations (e.g., during off-state), leads to an additional Vth instability. The gate-source voltage VGS also yields significant Vth instabilities, which correlate with the VDS-induced effects. Furthermore, the driving conditions causing an impact on Vth appear to also correlate with the devices’ short-circuit capability and degradation. However, no available models cover the Vth behavior, which is necessary to predict their impact and reliability concerns. Consequently, a compact model is developed based on the surface potential for the drain path, extended by the conduction mechanisms covering the gate path. Finally, the Vth shift is modeled based on capacitive coupling into the gate, while for the Vth instabilities, a possible implementation is exemplified for the impact of VDS

Gallium nitride simulations using Sentaurus software

Questa attività di tesi, svolta in NXP Semiconductors R&D – Belgio in collaborazione con il DEI, ha avuto come oggetto l’ottenimento di modelli di simulazione per strutture HEMT in GaN/AlGaN, usando il software Sentaurus by Synopsys versione 2010.03. Prima di tutto sono state svolte simulazioni sia DC (IdVg, IdVd) che AC (Cgg) in modo tale da calibrare i nostri modelli basandoci su delle misure effettuate nei laboratori di NXP. In questa fase sono state aggiunte trappole nel dispositivo e variando la concentrazione e l’energia di attivazione di queste ultime è stato ottenuto un ottimo matching fra caratteristiche sperimentali e simulazioni. Partendo da questi modelli si è cercato poi di implementare un nuovo modello di mobiità calibrato per il GaN, usando l’interfaccia C++ del simulatore. Simulazioni di gate leakage sono state effettuate per cercare di dare una spiegazione a questo fenomeno, il quale impatta negativamente sulle prestazioni di questi dispositivi. Infine si è cercato di studiare la distribuzione del campo elettrico nel canale, variando la lunghezza del Field Plat

Passive and active components development for broadband applications

Recently, GaN HEMTs have been proven to have numerous physical properties, resulting in transistors with greatly increased power densities when compared to the other well-established FET technologies. This advancement spurred research and product development towards power-band applications that require both high power and high efficiency over the wide band. Even though the use of multiple narrow band PAs covering the whole band has invariably led to better performance in terms of efficiency and noise, there is an associated increase in cost and in the insertion loss of the switches used to toggle between the different operating bands. The goal, now, of the new technology is to replace the multiple narrow band PAs with one broadband PA that has a comparable efficiency performance. In our study here, we have investigated a variety of wide band power amplifiers, including class AB PAs and their implementation in distributed and feedback PAs.Additionally, our investigation has included switching-mode PAs as they are well-known for achieving a relatively high efficiency. Besides having a higher efficiency, they are also less susceptible to parameter variations and could impose a lower thermal stress on the transistors than the conventional-mode PAs. With GaN HEMTs, we have demonstrated: a higher than 37 dBm output power and a more than 30% drain efficiency over 0.02 to 3 GHz for the distributed power amplifier; a higher than 30 dBm output power with more than a 22% drain efficiency over 0.1 to 5 GHz for the feedback amplifier; and at least a 43 dBm output power with a higher than 63% drain efficiency over 0.05 to 0.55 GHz for the class D PA. In many communication applications, however, achieving both high efficiency and linearity in the PA design is required. Therefore, in our research, we have evaluated several linearization and efficiency enhancement techniques.We selected the LInear amplification with Nonlinear Components (LINC) approach. Highly efficient combiner and novel efficiency enhancement techniques like the power recycling combiner and adaptive bias LINC schemes have been successfully developed and verified to achieve a combined high efficiency with a relatively high linearity

Feature Papers in Electronic Materials Section

This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book

Development of InAlN HEMTs for space application

This thesis investigates the emerging InAlN high electron mobility transistor (HEMT) technology with respect to its application in the space industry. The manufacturing processes and device performance of InAlN HEMTs were compared to AlGaN HEMTs, also produced as part of this work. RF gain up to 4 GHz was demonstrated in both InAlN and AlGaN HEMTs with gate lengths of 1 μm, with InAlN HEMTs generally showing higher channel currents (~150 c.f. 60 mA/mm) but also degraded leakage properties (~ 1 x 10-4 c.f. < 1 x 10-8 A/mm) with respect to AlGaN. An analysis of device reliability was undertaken using thermal stability, radiation hardness and off-state breakdown measurements. Both InAlN and AlGaN HEMTs showed excellent stability under space-like conditions, with electrical operation maintained after exposure to 9.2 Mrad of gamma radiation at a dose rate of 6.6 krad/hour over two months and after storage at 250°C for four weeks. Furthermore a link was established between the optimisation of device performance (RF gain, power handling capabilities and leakage properties) and reliability (radiation hardness, thermal stability and breakdown properties), particularly with respect to surface passivation. Following analysis of performance and reliability data, the InAlN HEMT device fabrication process was optimised by adjusting the metal Ohmic contact formation process (specifically metal stack thicknesses and anneal conditions) and surface passivation techniques (plasma power during dielectric layer deposition), based on an existing AlGaN HEMT process. This resulted in both a reduction of the contact resistivity to around 1 x 10-4 Ω.cm2 and the suppression of degrading trap-related effects, bringing the measured gate-lag close to zero. These discoveries fostered a greater understanding of the physical mechanisms involved in device operation and manufacture, which is elaborated upon in the final chapter

Coreless planar transformer for hard-switching applications

Leistungshalbleiter werden meist in schaltenden Anwendungen eingesetzt. Hartes Schalten ist hierfür ein gängiges und einfaches Funktionsprinzip, insbesondere bei induktiven Lasten. Hier können durch Verkürzung der Übergangsdauer zwischen Spannung und Strom die Schaltverluste reduziert werden. Die Nachteile schnellerer Übergänge in hart schaltenden Anwendungen sind in der Regel höhere Überschwingungen und außerdem die Erzeugung von elektromagnetischen Störungen. Die maximale Überspannung wird hierbei durch die Sperrspannung des Halbleiters begrenzt. Ein gängiger Ansatz zur Reduzierung der Überspannungen für einen Leistungshalbleiter ist die Minimierung der Induktivität im Leistungspfad. Ein in Reihe mit den Leistungsanschlüssen des Halbleiters geschalteter Transformator kann jedoch für verschiedene Anwendungen von Vorteil sein. Insbesondere die hohen Stromgradienten bei schnellen, harten Schaltvorgängen sorgt für eine hohe, und somit gut nutzbare Ausgangsspannung des Transformators. In dieser Arbeit wird ein neues Design eines kernlosen Planartransformators vorgestellt. Eine hohe magnetische Kopplung und ein einstellbares Übersetzungsverhältnis sowie eine besonders hohe Bandbreite sorgen dafür, dass die Induktivität in Reihe mit dem Halbleiter minimal gehalten werden kann. Der zweischichtige Aufbau ist zudem für verschiedene Substrate, insbesondere Leiterplatten, geeignet. Ein bis zur ersten Resonanzfrequenz gültiges Simulationsmodell des neuen Übertragerdesigns wurde erstellt und verifiziert. Die Anwendung, für die der Übertrager in dieser Arbeit hauptsächlich eingesetzt wird, ist das induktive Feed-Forward-Verfahren. Diese Methode zur Steuerung von Leistungshalbleitern beschleunigt das Umschalten in hart schaltenden Anwendungen. Die Methode wird analysiert und Verbesserungen für eine Auswahl von Leistungshalbleiter-Designs werden vorgeschlagen und verifiziert. Weiterhin wird die Ansteuerungsmethode modifiziert, um symmetrische Stromgradienten in parallel geschalteten Leistungshalbleitern zu erreichen. Außerdem wird der Übertrager vergleichbar zu einer Rogowski-Spule als Stromsensor genutzt, um die hohen Stromgradienten beim Schalten zu charakterisieren. Es wird gezeigt, dass durch verpolung der Sekundärwicklung das induktive Feed-Forward-Verfahren zur Verlangsamung des Schaltvorganges eingesetzt werden kann. In der letzten in dieser Arbeit vorgestellten Anwendung wird der Übertrager zur Erzeugung einer isolierten Versorgungsspannung für die Gate Ansteuerung eingesetzt. Die Anwendung ist besonders vorteilhaft, wenn eine negative Versorgungsspannung erforderlich ist, z.B. aufgrund einer niedrigen Schwellspannung

Miniaturized Transistors, Volume II

In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before

Modelação não-linear de transistores de potência para RF e microondas

Doutoramento em Engenharia Electrotécnic