Less-conventional low-consumption galvanic separated MOSFET-IGBT gate drive supply

A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it has a very low parasitic capacitance between primary and secondary coils, and it is cost-effective. Very low standby losses were observed during lab experiments. This makes it compatible with energy efficient drives and solar inverters

Combinational logic for generating gate drive signals for phase control rectifiers

Control signals for phase-delay rectifiers, which require a variable firing angle that ranges from 0 deg to 180 deg, are derived from line-to-line 3-phase signals and both positive and negative firing angle control signals which are generated by comparing current command and actual current. Line-to-line phases are transformed into line-to-neutral phases and integrated to produce 90 deg phase delayed signals that are inverted to produce three cosine signals, such that for each its maximum occurs at the intersection of positive half cycles of the other two phases which are inputs to other inverters. At the same time, both positive and negative (inverted) phase sync signals are generated for each phase by comparing each with the next and producing a square wave when it is greater. Ramp, sync and firing angle controls signals are than used in combinational logic to generate the gate firing control signals SCR gate drives which fire SCR devices in a bridge circuit

A magnetically isolated gate driver for high-speed voltage sharing in series-connected MOSFETs

A scalable resonant gate drive circuit is described, suitable for driving series-connected MOSFETs in high-voltage, high-speed inverter applications for resistive and capacitive loads. Galvanic isolation is provided by a loop of high voltage wire, which also serves as the resonant inductor in the circuit. Fast dynamic voltage sharing is achieved by delivering equal current to each gate. A prototype is built and tested, demonstrating a 75ns switching time at 5kV using 900V MOSFETs

An IGBT digital gate drive system with real time monitoring function.

It is aimed at controlling by detecting the accident digital gate drive system construction and real time monitoring ofmultiple parameters such as current and voltage, temperature of IGBT. This paper have made up real time monitoringcircuit of gate voltage, collector voltage, collector current by AD converter circuit, FPGA and produced platformexperimentally for digital gate drive system construction.電子デバイス/半導体電力変換合同研究会, 10月21日-22日, 2013年, 大阪大学　銀杏会館, 大阪

High Speed Turn-on Gate Driving for 4.5kV IEGT without Increase in PiN Diode Recovery Current

4.5 kV IEGT turn-on loss reduction is experimentally and numerically achieved by employing the proposed simple two step gate drive method without affecting PiN diode reverse recovery performance. It was found that 14% of turn-on loss is reduced only by the simple method. This study determines, for the first time, the optimum gate driving in the two step gate drive which can reduce IEGT turn-on loss maximally without affecting PiN diode reverse recovery performance by TCAD simulation. The method is simple yet effective for reducing switching loss of high voltage IEGT.2013 25th International Symposium on Power Semiconductor Devices & IC\u27s (ISPSD), May 26-30, 2013, Ishikawa Ongakudo, Kanazawa. Japan

Summary

Power MOSFETs require a gate drive circuit to translate the on/off signals from an analog or digital controller into the power signals necessary to control the MOSFET. This paper provides details of MOSFET switching action in applications with clamped inductive load, when used as a secondary synchronous rectifier, and driving pulse/gate drive transformers. Potential driver solutions, including discrete and integrated driver designs, are discussed. MOSFET driver datasheet current ratings are examined and circuits are presented to assist with evaluating the performance of drivers on the lab bench

An IGBT digital gate drive system with real time monitoring function.

電子デバイス/半導体電力変換合同研究会, 10月21日-22日, 2013年, 大阪大学　銀杏会館, 大阪府It is aimed at controlling by detecting the accident digital gate drive system construction and real time monitoring of multiple parameters such as current and voltage, temperature of IGBT. This paper have made up real time monitoring circuit of gate voltage, collector voltage, collector current by AD converter circuit, FPGA and produced platform experimentally for digital gate drive system construction

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits � AEC Q101 compliant � Suitable for standard and logic level gate drive sources � Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications � 12 V Automotive systems � Electric and electro-hydraulic power steering � Motors, lamps and solenoid control � Start-Stop micro-hybrid applications � Transmission control � Ultra high performance power switching 1.4 Quick reference dat

Speed-Up Gate Pulse Method to Suppress Switching Loss and Surge Voltage for MOS Gate Power Devices

There is a trade-off between surge voltage and switching loss in power semiconductors, and it has been difficult to reduce both. In order to solve this problem, the digital gate drive method has been studied. However, the digital gate drive method has the problem that the gate drive circuit is complicated and it takes time to search for the optimal drive waveform. In this study, we have proposed a new method that does not require optimization search, but only adds a simple circuit, which is expected to have the same effect as the digital gate drive method.IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2022), 22-25 May 2022, Vancouver, Canad