'Institute of Electrical and Electronics Engineers (IEEE)'
Abstract
A scalable resonant gate drive circuit is described, suitable for driving series-connected MOSFETs in high-voltage, high-speed inverter applications for resistive and capacitive loads. Galvanic isolation is provided by a loop of high voltage wire, which also serves as the resonant inductor in the circuit. Fast dynamic voltage sharing is achieved by delivering equal current to each gate. A prototype is built and tested, demonstrating a 75ns switching time at 5kV using 900V MOSFETs
