NV−^{-} Diamond Laser

For the first time, lasing at NV$^{-}$ centers in an optically pumped diamond sample is achieved. A nanosecond train of 150-ps 532-nm laser pulses was used to pump the sample. The lasing pulses have central wavelength at 720 nm with a spectrum width of 20 nm, 1-ns duration and total energy around 10 nJ. In a pump-probe scheme, we investigate lasing conditions and gain saturation due to NV$^{-}$ ionization and NV$^{0}$ concentration growth under high-power laser pulse pumping of diamond crystal

Properties of LiGa0.5In0.5Se2: A Quaternary Chalcogenide Crystal for Nonlinear Optical Applications in the Mid-IR

LiGaSe2 (LGSe) and LiInSe2 (LISe) are wide band-gap nonlinear crystals transparent in the mid-IR spectral range. LiGa0.5In0.5Se2 (LGISe) is a new mixed crystal, a solid solution in the system LGSe–LISe, which exhibits the same orthorhombic structure (mm2) as the parent compounds in the same time being more technological with regard to the growth process. In comparison with LGSe and LISe its homogeneity range is broader in the phase diagram. About 10% of the Li ions in LGISe occupy octahedral positions (octapores) with coordination number of 3. The band-gap of LGISe is estimated to be 2.94 eV at room temperature and 3.04 eV at 80 K. The transparency at the 0-level extends from 0.47 to 13 µm. LGISe crystals exhibit luminescence in broad bands centered near 1.7 and 1.25 eV which is excited most effectively by band-to-band transition. From the measured principal refractive indices and the fitted Sellmeier equations second-harmonic generation from 1.75 to 11.8 μm (fundamental wavelength) is predicted. The nonlinear coefficients of LGISe have values between those of LGSe and LISe. 6LGISe crystals are considered promising also for detection of thermal neutrons

Optical, vibrational, thermal, electrical, damage and phase-matching properties of lithium thioindate

Lithium thioindate (LiInS$_{2}$) is a new nonlinear chalcogenide biaxial material transparent from 0.4 to 12 $\mu$m, that has been successfully grown in large sizes and good optical quality. We report on new physical properties that are relevant for laser and nonlinear optics applications. With respect to AgGaS(e)$_2$ ternary chalcopyrite materials, LiInS$_{2}$ displays a nearly-isotropic thermal expansion behavior, a 5-times larger thermal conductivity associated with high optical damage thresholds, and an extremely low intensity-dependent absorption allowing direct high-power downconversion from the near-IR to the deep mid-IR. Continuous-wave difference-frequency generation (5-11$\mu$m) of Ti:sapphire laser sources is reported for the first time.Comment: 27 pages, 21 figures. Replaces the previous preprint (physics/0307082) with the final version as it will be published in J. Opt. Soc. Am. B 21(11) (Nov. 2004 issue

Properties of LiGa0.5In0.5Se2: A Quaternary Chalcogenide Crystal for Nonlinear Optical Applications in the Mid-IR

LiGaSe2 (LGSe) and LiInSe2 (LISe) are wide band-gap nonlinear crystals transparent in the mid-IR spectral range. LiGa0.5In0.5Se2 (LGISe) is a new mixed crystal, a solid solution in the system LGSe–LISe, which exhibits the same orthorhombic structure (mm2) as the parent compounds in the same time being more technological with regard to the growth process. In comparison with LGSe and LISe its homogeneity range is broader in the phase diagram. About 10% of the Li ions in LGISe occupy octahedral positions (octapores) with coordination number of 3. The band-gap of LGISe is estimated to be 2.94 eV at room temperature and 3.04 eV at 80 K. The transparency at the 0-level extends from 0.47 to 13 µm. LGISe crystals exhibit luminescence in broad bands centered near 1.7 and 1.25 eV which is excited most effectively by band-to-band transition. From the measured principal refractive indices and the fitted Sellmeier equations second-harmonic generation from 1.75 to 11.8 μm (fundamental wavelength) is predicted. The nonlinear coefficients of LGISe have values between those of LGSe and LISe. 6LGISe crystals are considered promising also for detection of thermal neutrons

Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal

The development of antireflection coatings is crucially important to improve the performance of various photonic devices, for example, to increase the efficiency of harmonic generators based on high-refractive index crystals with significant Fresnel losses. A promising technique for the reducing of radiation reflection is to change the refractive index by fabrication of antireflection microstructures (ARM) on the surface. This paper presents the results of ARM direct writing on the surfaces of a nonlinear GaSe crystal (of ε modification, according to Raman and photoluminescence spectroscopy data) using fs laser radiation and a multiples approach. An increase in transmission from 65% to 80% for an ARM fabricated on one side of the crystal and up to 94% for ARMs fabricated on both sides is demonstrated. The increase in transmission with the increasing pulse energy, as well as with an increase in the number of pulses used for the formation of a single crater, is shown. The experimental results of ARM transmission of GaSe are in qualitative agreement with the simulation results based on the measured profiles and morphology of the ARM structures

Properties of LiGa0.5In0.5Se2: A Quaternary Chalcogenide Crystal for Nonlinear Optical Applications in the Mid-IR

LiGaSe2 (LGSe) and LiInSe2 (LISe) are wide band-gap nonlinear crystals transparent in the mid-IR spectral range. LiGa0.5In0.5Se2 (LGISe) is a new mixed crystal, a solid solution in the system LGSe–LISe, which exhibits the same orthorhombic structure (mm2) as the parent compounds in the same time being more technological with regard to the growth process. In comparison with LGSe and LISe its homogeneity range is broader in the phase diagram. About 10% of the Li ions in LGISe occupy octahedral positions (octapores) with coordination number of 3. The band-gap of LGISe is estimated to be 2.94 eV at room temperature and 3.04 eV at 80 K. The transparency at the 0-level extends from 0.47 to 13 µm. LGISe crystals exhibit luminescence in broad bands centered near 1.7 and 1.25 eV which is excited most effectively by band-to-band transition. From the measured principal refractive indices and the fitted Sellmeier equations second-harmonic generation from 1.75 to 11.8 μm (fundamental wavelength) is predicted. The nonlinear coefficients of LGISe have values between those of LGSe and LISe. 6LGISe crystals are considered promising also for detection of thermal neutrons

Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal

The development of antireflection coatings is crucially important to improve the performance of various photonic devices, for example, to increase the efficiency of harmonic generators based on high-refractive index crystals with significant Fresnel losses. A promising technique for the reducing of radiation reflection is to change the refractive index by fabrication of antireflection microstructures (ARM) on the surface. This paper presents the results of ARM direct writing on the surfaces of a nonlinear GaSe crystal (of ε modification, according to Raman and photoluminescence spectroscopy data) using fs laser radiation and a multiples approach. An increase in transmission from 65% to 80% for an ARM fabricated on one side of the crystal and up to 94% for ARMs fabricated on both sides is demonstrated. The increase in transmission with the increasing pulse energy, as well as with an increase in the number of pulses used for the formation of a single crater, is shown. The experimental results of ARM transmission of GaSe are in qualitative agreement with the simulation results based on the measured profiles and morphology of the ARM structures

Surface Porosity of Natural Diamond Crystals after the Catalytic Hydrogenation

The study of diamond surfaces is traditionally undertaken in geology and materials science. As a sample material, two natural diamond crystals of type Ia were selected, and their luminescence and nitrogen state was characterized. In order to etch the surface catalytic hydrogenation was performed using Fe particles as an etchant. Micromorphology of the surface was investigated by scanning electron and laser confocal microscopy. It was demonstrated that etching occurred perpendicular to the crystal surface, with no signs of tangential etching. The average depth of caverns did not exceed 20–25 μm with a maximal depth of 40 μm. It is concluded that catalytic hydrogenation of natural type Ia diamonds is effective to produce a porous surface that can be used in composites or as a substrate material. Additionally, the comparison of results with porous microsculptures observed on natural impact diamond crystals from the Popigai astrobleme revealed a strong resemblance