Study of thermal stability in Se90Sb10-xAgx glassy alloys

Alloys of Se100-xSb10-xAgx (x=2, 4 &8) glassy system have been obtained by quenching technique. Kinetic parameters, which represent thermal stability, have been determined from differential scanning calorimetric technique. The rate of crystallization decreases with Ag concentration and is lowest for glassy Se90Sb2Ag8 alloy. Thermal stability (Tc-Tg), Hruby criterion Hr , Saad Poulain ‘S’ have been found to increase with Ag concentration and are maximum for Se90Sb2Ag8. Thus, one can conclude that the rate of crystallization is related to the thermal stability. The reduced glass transition temperature for Se90Sb10-xAgx is found to be 2/3, which shows that these glassy alloys are suitable for phase change optical memories

PARAMETERS OF TRAPPING CENTERS IN AMORPHOUS Se 70 Te 30-x Zn x THIN FILMS

Thermally stimulated currents have been measured at different heating rates (β) in amorphous thin films of Se 70 Te 30-x Zn x (x = 0, 2, 4, 6, 8). A clear TSC peak occurs at a particular temperature that shift towards higher temperatures as heating rates (β) is increased. The aim of this paper is to determine initial information about trap depth and trap concentration (N t ). The value of N t decreases with increases in Zn concentration upto 2 % and thereafter it increases with increase in Zn concentration

Study of thermal stability in Se₉₀Sb_10-xAg_x glassy alloys

884-889Alloys of Se100-xSb10-xAgx (x=2, 4 &8) glassy system have been obtained by quenching technique. Kinetic parameters, which represent thermal stability, have been determined from differential scanning calorimetric technique. The rate of crystallization decreases with Ag concentration and is lowest for glassy Se90Sb2Ag8 alloy. Thermal stability (Tc-Tg), Hruby criterion Hr , Saad Poulain ‘S’ have been found to increase with Ag concentration and are maximum for Se90Sb2Ag8. Thus, one can conclude that the rate of crystallization is related to the thermal stability. The reduced glass transition temperature for Se90Sb10-xAgx is found to be 2/3, which shows that these glassy alloys are suitable for phase change optical memories