IDENTIFICATION OF ORGANIC COMPONENTS OF SOLID WASTE ON SATELLITE IMAGERY WHILE MANAGING ENVIRONMENTAL SAFETY

Solid domestic wastes contain a components which can become nutrients for a pretty wide spectrum of types of microorganisms some of which are harmful for human and environment. The climate on territory of Ukraine promotes their intensive reproduction in such conditions. All organisms, including microorganisms, mainly consist of carbon and therefore represent the carbon containing components of waste dumps, namely organic. Monitoring of the conditions of microbiological pollution of urban systems on the territory of which surely there are solid waste damps as part of technogenic and ecological safety of these systems, can take one of main places in ecological safety management systems

Забезпечення екологічної безпеки шляхом використання пористих напівпровідників для сонячної енергетики

The paper considers the ways of provision of environmental safety. A scheme of multilevel decomposition of the problems of provision of environmental safety through the use of innovative technologies for solar energy sector is presented. It is demonstrated that it is possible to increase efficiency of photoelectric modifiers of energy through the use of nanostructured semiconductors. The possibilities of minimizing the reflection ability (due to catching light in pores), an increase in the width of the restricted band of porous layer (due to quantum retaining of charges in microcrystallites) due to changing the porosity allow the use of layers of porous semiconductor both as anti-reflecting coating and as a broadband photosensitive layer. Under condition of using nanostructured semiconductors, the sensitivity of solar panels to the surface contamination decreases greatly. The economic benefits of using porous silicon in solar power include low cost of an area unit of a solar battery, which is provided for by the cost parameters of basic technology for manufacturing porous material. The method of electrochemical etching of nanostructures was used to obtain nanostructures. Basic regularities of the formation of porous layer at the surface of semiconductors of the A3V5 group and silicon were established. Technological conditions are selected individually for each semiconductor. The establishment of these regularities allows the optimization of the etching process and the fabrication of porous layers with the assigned parameters. Представлена схема многоуровневой декомпозиции задач обеспечения экологической безопасности путем использования инновационных технологий для солнечной энергетики. Показано, что повышение КПД фотоэлектрических преобразователей энергии становится возможным за счет использования наноструктурированных полупроводников. Для получения наноструктур использовали метод электрохимического травленияПредставлено схему багаторівневої декомпозиції задач забезпечення екологічної безпеки шляхом використання інноваційних технологій для сонячної енергетики Показано, що підвищення ККД фотоелектричних перетворювачів енергії стає можливим за рахунок використання наноструктурованих напівпровідників. Для отримання наноструктур використовували метод електрохімічного травленн

Science in times of crisis: How does the war affect the efficiency of Ukrainian scientists?

This study aims to assess how to prevent the loss of academic potential due to the full-scale war unleashed by Russia on the territory of Ukraine. The paper establishes the relationship between the location of Ukrainian researchers and their ability to engage in scientific activity and determines the factors that decrease scientific efficiency during the war. Moreover, it identifies the influence of the scientists’ place of residence on their scientific efficiency. The sample comprises 172 lecturers from Berdyansk State Pedagogical University, Ukraine. This university was chosen because it was located in the temporarily occupied territory at the beginning of the war and later was relocated to another city. 40.8% of respondents who left the temporarily occupied territory for the Ukraine-controlled territories noted a decrease in the effectiveness of their scientific activities. Furthermore, 33.8% could not think about science at all. The most challenging situation is for those who went abroad: 55.6% show decreased scientific activity, and 27.7% note its complete absence. The most significant reasons that prevent scientific activity are financial instability, lack of access to equipment, loss of relevance of previously started research, inability to concentrate on science, poor quality or lack of Internet, and adaptation to a new residence.--//-- This is an open access article Yana Suchikova, Natalia Tsybuliak, Hanna Lopatina, Liudmyla Shevchenko and Anatoli I. Popov (2023). Science in times of crisis: How does the war affect the efficiency of Ukrainian scientists?. Problems and Perspectives in Management, 21(1), 408-424. doi:10.21511/ppm.21(1).2023.35 published under the CC BY 4.0 licence.The Institute of Solid State Physics, University of Latvia as the Centre of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016- 2017-TeamingPhase2 under grant agreement No. 739508, project CAMART

Ukrainian universities at the time of war: From occupation to temporary relocation

Introduction: This paper presents a deep analysis of the impact of the Russian occupation on the activities of Berdyansk State Pedagogical University in Ukraine. This reflection sheds light on numerous challenges faced by the university community under occupation due to the the Russia’s full-scale war against Ukraine, particularly emphasizing human rights violations and academic freedom. Methods: Utilizing a qualitative research approach, this study employs document analysis, online surveys, and semi-structured interviews. Results: The findings reveal a profound impact of war and occupation on academic and physical freedom. We share the experiences of staff and students during life under occupation, which are filled with fear of violent actions by the occupiers. Berdyansk State Pedagogical University had to adapt to changing conditions, transitioning to a digital educational platform and decentralizing its structure while concurrently fulfilling its third mission: social service and support of the university community and Berdyansk local community.Discussion: Our research-reflective piece calls for immediate intervention and further research toward developing effective strategies to protect the rights of staff and students of higher educational institutions in conditions of war and occupation. We urge the academic community, civil society orgnisations, international orgnisations, and governments to direct their efforts to protect the rights of academic communities during war and occupation. Conclusions provide a critical view of the catastrophic consequences for academic communities and science if timely measures are not taken. Keywords: war, Ukraine, university, occupation, relocation, educational process, scientific work, higher education.Introducción: Este artículo examina el impacto de la guerra en el sistema educativo y analiza la reubicación de las instituciones educativas en zonas neutrales en caso de una amenaza a la seguridad. Específicamente, este artículo examina la experiencia de la Universidad Pedagógica Estatal de Berdyansk durante la invasión militar a gran escala de Ucrania por parte de la Federación Rusa, desde el comienzo de la ocupación hasta su reubicación temporal. Este estudio nos permitirá conocer qué desafíos se presentaron y cómo la universidad, su dirección y docentes los superaron. Objetivo: Este documento tiene como objetivo proporcionar un relato reflexivo de la intervención de las fuerzas de ocupación rusas en la ciudad de Berdyansk y los cambios en la Universidad Pedagógica Estatal de Berdyansk como resultado. Describe las estrategias que se integraron para preservar la vida y la salud de la comunidad universitaria y restablecer el proceso educativo en las condiciones de ocupación de la ciudad de Berdyansk. Resultados: A partir de los datos de la encuesta a estudiantes y personal académico de la universidad, se han realizado conclusiones relacionadas con la actitud de los encuestados ante las situaciones que se presentan en el momento de la guerra a gran escala y la ocupación temporal por parte de las tropas. Bajo ocupación temporal, la universidad tiene como objetivo la misión a la sociedad: el apoyo de la comunidad universitaria en todos los niveles, pero no puede realizar la misión principal: educativa, así como una actividad científica. Conclusiones: Se demostró que para restablecer la actividad universitaria bajo ocupación, los pasos más efectivos son la reubicación temporal por seguridad

Characterization of CdxTeyOz/CdS/ZnO Heterostructures Synthesized by the SILAR Method

The study was supported by the Ministry of Education and Science of Ukraine via Project No. 0122U000129 “The search for optimal conditions for nanostructure synthesis on the surface of A3B5, A2B6 semiconductors and silicon for photonics and solar energy” and Project No. 0121U10942 “Theoretical and methodological bases of system fundamentalization of the future nanomaterials experts training for productive professional activity”. In addition, the research of A.P. and Y.S. was partly supported by COST Action CA20129 “Multiscale Irradiation and Chemistry Driven Processes and Related Technologies” (MultIChem). A.P. thanks to the Institute of Solid-State Physics, University of Latvia. ISSP UL as the Center of Excellence is supported through the Framework Program for European universities, Union Horizon 2020, H2020-WIDESPREAD-01–2016–2017-TeamingPhase2, under Grant Agreement No. 739508, CAMART2 project.CdxTeyOz/CdS/ZnO heterostructures were obtained by the SILAR method using ionic electrolytes. A CdS film was formed as a buffer layer for better adhesion of the cadmium-tellurium oxides to the substrate surface. In turn, the ZnO substrate was previously prepared by electrochemical etching to form a rough textured surface. In addition, an annealing mode was used in an oxygen stream to complete the oxidation process of the heterostructure surface. The resulting nanocomposite was investigated using RAMAN, XRD, SEM, and EDX methods. We assume that the oxides CdO and TeO4 initially form on the surface and later evolve into TeO2 and TeO3 when saturated with oxygen. These oxides, in turn, are the components of the ternary oxides CdTeO3 and CdTe3O8. It should be noted that this mechanism has not been fully studied and requires further research. However, the results presented in this article make it possible to systematize the data and experimental observations regarding the formation of cadmium-tellurium films. © 2023 by the authors.--//-- This is an open access publication Suchikova Y., Kovachov S., Bohdanov I., Popova E., Moskina A., Popov A.; Characterization of CdxTeyOz/CdS/ZnO Heterostructures Synthesized by the SILAR Method (2023) Coatings, 13 (3), art. no. 639; DOI: 10.3390/coatings13030639; https://www.scopus.com/inward/record.uri?eid=2-s2.0-85152654514&doi=10.3390%2fcoatings13030639&partnerID=40&md5=3ea72367de513202fc87a3a5b99df07f published under the CC BY 4.0 licence.Ministry of Education and Science of Ukraine via Project No. 0122U000129 and Project No. 0121U10942; COST Action CA20129; The ISSP UL as the Center of Excellence is supported through the Framework Program for European universities, Union Horizon 2020, H2020-WIDESPREAD-01–2016–2017-TeamingPhase2, under Grant Agreement No. 739508, CAMART2 project

Формування низькопоруватих шарів фосфіду індію із заданим рівнем якості

The morphological quality criterion was developed to have a possibility of formation of nanostructured layers on semiconductor surface with adjustable properties. The layers of low-porous indium phosphide with mesoporous structure were obtained. The porous layers were formed by the method of electrochemical etching in the solution of hydrochloric acid at constant current density. According to the developed criterion, the quality of synthesized por-InP samples was analyzed. This will make it possible to manufacture the structures with porous layers on the surface on an industrial scale. The presented criterion can be applied to other modes of treatment of indium phosphide or to other semiconductors. This will make it possible to treat it as a universal morphological criterion of quality of porous structures. The correlation between morphological properties of porous structures on the surface of indium phosphide and etching conditions was established. To do this, porous structures, which were formed in the interval of etching time from 10 to 20 min at different concentration of acid in the electrolyte, were analyzed. As a result, it was established that the shape of the pores of nanostructured layers on the surface of semiconductors depends not only on parameters of a crystal, but also on etching conditions, specifically, on etching time and electrolyte composition. The application of saturated electrolytes leads to formation of massive groove-shaped pores – elongated ellipses. The obtained correlations are useful from the practical point of view, as they make it possible to approach reasonably determining the modes of electrochemical treatment of semiconductors.In addition, it opens up new prospects in the construction of the model of self-organization of a porous structure on the surface of semiconductors. The technique of calculating basic statistical characteristics of the series of distribution of pores by dimensions, specifically, the variation span, dispersion, mean deviation, coefficients of variation and asymmetry was presented. This makes it possible to evaluate in detail the morphological indicators of porous structures and to progress in understanding the mechanisms behind the pore formation on the surface of semiconductors during electrochemical treatment.Для возможности формирования наноструктурированных слоев на поверхности полупроводников с регулируемыми свойствами разработан морфологический критерий качества. Получены слои низкопористого фосфида индия с мезопористой структурой. Пористые слои формировались методом электрохимического травления в растворе соляной кислоты при постоянной плотности тока. Согласно разработанного критерия проанализированы качество синтезируемых образцов por-InP. Это позволит изготавливать структуры с пористыми слоями на поверхности в промышленных масштабах. Представленный критерий может быть применен для других режимов обработки фосфида индия, или для других полупроводников. Это позволяет рассматривать его как универсальный морфологический критерий качества пористых структур. Установлена корреляция между морфологическими свойствами пористых структур на поверхности фосфида индия и условий травления. Для этого были проанализированы пористые структуры, коротые формировались в интервале времени травления от 10 до 20 мин при различной концентрации кислоты в электролите. В результате установлено, что форма пор наноструктурированных слоев на поверхности полупроводников зависит не только от параметров кристалла, но и от условий травления, в частности от времени травления и состава электролита. Применение насыщенных электролитов приводит к формированию массивных пор, имеющих форму канавок - вытянутые эллипсы. Полученные корреляции полезны с практической точки зрения, так как позволяют обоснованно подходить к определению режимов электрохимической обработки полупроводников. Кроме того, это открывает новые перспективы в построении модели самоорганизации пористой структуры на поверхности полупроводников. Представлена методика расчета основных статистических характеристик ряда распределения пор по размеру, в частности размах вариации, дисперсию, среднее отклонение, коэффициенты вариации и асимметрии. Это позволяет более детально оценивать морфологические показатели пористых структур и продвинуться в понимании механизмов, лежащих в основе порообразования на поверхности полупроводников при электрохимической обработкеДля можливості формування наноструктурованих шарів на поверхні напівпровідників із регульованими властивостями розроблено морфологічний критерій якості. Отримано шари низькопоруватого фосфіду індію з мезопоруватою структурою. Поруваті шари формувалися методом електрохімічного травлення у розчині соляної кислоти при постійній щільності струму. За розробленим критерієм проаналізовано якість синтезованих зразків por-InP. Це дозволить виготовляти структури з поруватими шарами на поверхні у промислових масштабах. Представлений критерій може бути застосованим для інших режимів обробки фосфіду індію, або для інших напівпровідників. Це дозволяє розглядати його як універсальний морфологічний критерій якості поруватих структур. Встановлено кореляцію між морфологічними властивостями поруватих структур на поверхні фосфіду індію та умовами травлення. Для цього було проаналізовано поруваті структури, які формувалися у інтервалі часу травлення від 10 до 20 хв при різній концентрації кислоти у електроліті. У результаті встановлено, що форма пор наноструктурованих шарів на поверхні напівпровідників залежить не лише від параметрів кристалу, а й від умов травлення, зокрема від часу травлення та складу електроліту. Застосування насичених електролітів призводить до формування масивних пор, які мають форму канавок – витягнуті еліпси. Отримані кореляції є корисними з практичної точки зору, тому що дозволяють обґрунтовано підходити до визначення режимів електрохімічної обробки напівпровідників. Крім того, це відкриває нові перспективи у побудові моделі самоорганізації поруватої структури на поверхні напівпровідників. Представлено методику розрахунку основних статистичних характеристик ряду розподілу пор за розміром, зокрема розмах варіації, дисперсію,середньоквадратичне відхилення, коефіцієнти варіації та асиметрії. Це дозволяє більш детально оцінювати морфологічні показники поруватих структур та просунутися у розумінні механізмів, що лежать в основі пороутворення на поверхні напівпровідників під час електрохімічної обробк

Electrochemical Growth and Structural Study of the AlxGa1−xAs Nanowhisker Layer on the GaAs Surface

The study was supported by the Ministry of Education and Science of Ukraine via Project No. 0122U000129 “The search for optimal conditions for nanostructure synthesis on the surface of A3B5, A2B6 semiconductors and silicon for photonics and solar energy”, Project No. 0121U10942 “Theoretical and methodological bases of system fundamentalization of the future nanomaterials experts training for productive professional activity”, and Project No. 0123U100110 “System of remote and mixed specialized training of future nanoengineers for the development of new dual-purpose nanomaterials”. In addition, the research of A.I.P. and Y.S. was partly supported by COST Action CA20129 “Multiscale irradiation and chemistry driven processes and related technologies” (MultiChem). Y.S. was partly supported by COST Action CA20126—Network for research, innovation, and product development on porous semiconductors and oxides (NETPORE). A.I.P., thanks to the Institute of Solid State Physics, University of Latvia, ISSP UL as the Center of Excellence, is supported through the Framework Program for European Universities, Union Horizon 2020, H2020-WIDESPREAD-01–2016–2017-TeamingPhase2, under Grant Agreement No. 739508, CAMART2 project.This work presents a novel, cost-effective method for synthesizing AlxGa1−xAs nanowhiskers on a GaAs surface by electrochemical deposition. The process begins with structuring the GaAs surface by electrochemical etching, forming a branched nanowhisker system. Despite the close resemblance of the crystal lattices of AlAs, GaAs, and AlxGa1−xAs, our study highlights the formation of nanowhiskers instead of layer-by-layer film growth. X-ray diffraction analysis and photoluminescence spectrum evaluations confirm the synthesized structure’s crystallinity, uniformity, and bandgap characteristics. The unique morphology of the nanowhiskers offers promising implications for solar cell applications because of the increased light absorption potential and reduced surface recombination energy losses. We conclude by emphasizing the need for further studies on the growth mechanisms of AlxGa1−xAs nanowhiskers, adjustments of the “x” parameter during electrochemical deposition, and detailed light absorption properties of the formed compounds. This research contributes to the field of wideband materials, particularly for solar energy applications, highlighting the potential of electrochemical deposition as a flexible and economical fabrication method. --//-- This is an open access article: Suchikova, Y.; Kovachov, S.; Bohdanov, I.; Abdikadirova, A.A.; Kenzhina, I.; Popov, A.I. Electrochemical Growth and Structural Study of the AlxGa1−xAs Nanowhisker Layer on the GaAs Surface. J. Manuf. Mater. Process. 2023, 7, 153. https://doi.org/10.3390/jmmp7050153 published under the CC BY 4.0 licence.Ministry of Education and Science of Ukraine via Project No. 0122U000129, Project No. 0121U10942, Project No. 0123U100110; COST Action CA20129 MultiChem; COST Action CA20126 NETPORE; the Institute of Solid State Physics, University of Latvia, ISSP UL as the Center of Excellence, is supported through the Framework Program for European Universities, Union Horizon 2020, H2020-WIDESPREAD-01–2016–2017-TeamingPhase2, under Grant Agreement No. 739508, CAMART2 project

Youth views on the role of local government and universities in the development of deoccupied territories

This study examines young people’s perspectives on local government bodies’ and universities’ roles in revitalizing de-occupied territories. A mixed-methods approach was deployed to examine their roles in returning and retaining young people in these areas. An initial quantitative survey was conducted among 1,180 young individuals from Berdyansk and its district (a temporarily occupied territory of Ukraine), focusing on the prospects of their return after de-occupation. A subsequent “Youth of Berdyansk” forum assembled roughly 300 participants, including university and local government representatives, to further explore youth perceptions. Findings revealed that 52.8% of respondents envision their future in the de-occupied region. Local government bodies and universities were seen as crucial for the region’s development and restoration by 92% and 86% of respondents, respectively. Moreover, 69% recognized the potential of partnerships between these institutions to enhance the territories’ appeal. Most respondents indicated readiness to participate in creating recovery strategies (41% absolute readiness, 38% with certain guarantees), though views on youth-centric strategies were mixed (80% agreement, 13% disagreement). The study concludes that local government bodies and universities are critical in the territories’ recovery and development, necessitating explicit engagement and focusing on young people’s needs for effective outcomes

Synthesis of porous indium phosphide with nickel oxide crystallites on the surface

In this paper, the technology of synthesis of crystallites and nanocrystallites of nickel oxide on the surface of indium phosphide is described. This technology consists of two stages. In the first stage, porous indium phosphide is formed on the surface of a single crystal of indium phosphide. The formation of such a porous layer provides better adhesion to the surface of the sample. The second stage involves the preparation of the solution that contains nickel ions, application of this solution to the surface of porous indium phosphide, followed by annealing. As a result, NiO/NiC2O4∙2H2O/por- -InP/mono-InP structure was formed. Surface morphological parameters were obtained using scanning electron microscopy and EDX-analysis of chemical composition. Chemical analysis confirmed the partial formation of nickel oxide from nickel oxalate layer by thermal annealing. Using scanning electron microscopy, it has been established that the crystallites have a large scatter in diameter, but they may be divided into three characteristic groups: macro-; meso- and nano­crystallites. Such structures may find prospects for application in electrochemical capacitors and lithium-ion batteries. Further research is needed for methodology improvement to obtain structures with predetermined controlled properties

Evaluating the nexus of funding and scientific output in Kazakhstan

This study examines the dynamics and effectiveness of investments in Kazakhstan’s research and development (R&D). The primary aim is to assess the efficiency of scientific research activities in Kazakhstan by analyzing the relationship between R&D investments and scientific outputs across different periods. As a methodological approach, Data Envelopment Analysis (DEA) calculates efficiency indicators by transforming multiple inputs into outputs. Descriptive analysis comprehensively explains trends and patterns in R&D funding, scientific publications, and patent registrations. The results reveal a substantial increase in R&D expenditure. Despite this, the share of domestic R&D expenditures from the gross domestic product (GDP) declined from 0.25% to 0.12%. The analysis also uncovered a significant surge in scientific publications, with Scopus publications increasing from 1,799 to 28,280 and Web of Science publications rising from 1,468 to 20,532 across the study period. However, a contrasting trend was observed in patent registrations, which decreased from 6,968 to 2,612, indicating potential inefficiencies in translating research into innovations. The study concludes that while Kazakhstan has demonstrated notable progress in enhancing research output, the decline in patent registrations relative to the increase in R&D investments underscores the need for strategic initiatives. These should strengthen industry-academia collaboration, enhance innovation infrastructure, and balance incentives for publications and patents, ensuring that R&D investments translate into tangible innovations and contribute effectively to the nation’s socio-economic development. Acknowledgment This research article has been supported bу the Ministry of Education and Science of the Republic of Kazakhstan within the project «Development of а model for evaluating the effectiveness of research activities of universities in Kazakhstan based on non-parametric and semi-parametric data analysis» (IRN AP13268842). А.I.Р. thanks the lnstitute of Solid-State Physics, University of Latvia. ISSP UL as the Center of Excellence is supported through the Framework Program for European universities, Union Horizon 2020, H2020-WIDESPREAD-01-2016-2017 TeamingPhase2, under Grant Agreement No. 739508, CAMART2 project