Axial Fatigue Tests at Zero Mean Stress of 24S-T and 75S-T Aluminum-alloy Strips with a Central Circular Hole

Axial fatigue tests at zero mean stress have been made on 0.032- and 0.064-inch 24S-T and 0.032-inch 75S-T sheet-metal specimens 1/4, 1/2, 1, and 2 inches wide without a hole and with central holes giving a range of hole diameter D to specimen width W from 0.01 to 0.95. No systematic difference was noted between the results for the 0.032-inch and the 0.064-inch specimens although the latter seemed the more consistent. In general the fatigue strength based on the minimum section dropped sharply as the ration D/W was increased from zero to about 0.25. The plain specimens showed quite a pronounced decrease in fatigue strength with increasing width. The holed specimens showed only slight and rather inconclusive evidence of this size effect. The fatigue stress-concentration factor was higher for 75S-T than for 24S-T alloy. Evidence was found that a very small hole would not cause any reduction in fatigue strength

Axial Fatigue Tests at Zero Mean Stress of 24S-T Aluminum-alloy Sheet with and Without a Circular Hole

Axial fatigue tests were made on 189 coupon specimens of 0.032-inch 24S-T aluminum-alloy sheet and a few supplementary specimens of 0.004-inch sheet. The mean load was zero. The specimens were restrained against lateral buckling by lubricated solid guides described in a previous report on this project. About two-thirds of the 0.032-inch specimens were plain coupons nominally free from stress raisers. The remainder contained a 0.1285-inch drilled hole at the center where the reduced section was 0.5 inch wide. S-N diagrams were obtained for cycles to failure between about 1000 and 10 to the 7th power cycles for the plain specimens and 17 and 10 to the 7th power cycles for the drilled specimens. The fatigue stress concentration factor increased from about 1.08 for a stress amplitude causing failure at 0.25 cycles (static) to a maximum of 1.83 at 15,000 cycles and then decreased gradually. The graph for the drilled specimens showed less scatter than that for the plain specimens

Antimony doping of Si layers grown by solid-phase epitaxy

We report here that layers of Si formed by solid-phase epitaxial growth (SPEG) can be doped intentionally. The sample consists initially of an upper layer of amorphous Si (~1 µm thick), a very thin intermediate layer of Sb (nominally 5 Å), and a thin lower layer of Pd (~500 Å), all electron-gun deposited on top of a single-crystal substrate (1–10 Ω cm, p type, orientation). After a heating cycle which induces epitaxial growth, electrically active Sb atoms are incorporated into the SPEG layer, as shown by the following facts: (a) the SPEG layer forms a p-n junction against the p-type substrate, (b) the Hall effect indicates strong n-type conduction of the layer, and (c) Auger electron spectra reveal the presence of Sb in the layer

Liver-specific activation of AMPK prevents steatosis on a high fructose diet

AMP-activated protein kinase (AMPK) plays a key role in integrating metabolic pathways in response to energy demand. We identified a mutation in the γ1 subunit (γ1D316A) that leads to activation of AMPK. We generated mice with this mutation to study the effect of chronic liver-specific activation of AMPK in vivo. Primary hepatocytes isolated from these mice have reduced gluconeogenesis and fatty acid synthesis, but there is no effect on fatty acid oxidation compared to cells from wild-type mice. Liver-specific activation of AMPK decreases lipogenesis in vivo and completely protects against hepatic steatosis when mice are fed a high-fructose diet. Our findings demonstrate that liver-specific activation of AMPK is sufficient to protect against hepatic triglyceride accumulation, a hallmark of non-alcoholic fatty liver disease (NAFLD). These results emphasize the clinical relevance of activating AMPK in the liver to combat NAFLD and potentially other associated complications (e.g., cirrhosis and hepatocellular carcinoma)

Interaction of Al layers with polycrystalline Si

Auger electron spectroscopy, MeV 4He + backscattering spectrometry and scanning electron microscopy have been used to investigate interactions between Al films and polycrystalline layers of CVD Si deposited on SiO2. Depth profiling techniques showed that intermixing of the Al and Si occurred in the 400–560 °C temperature range (i.e., below the eutectic). Dissolution of the poly Si into the Al film occurs followed by nucleation and growth of Si crystallites in the Al film. The morphology of the final structure depends on the relative thicknesses of the as-deposited Al and Si layers. In the case of the original Al thickness being greater than that of the Si, the Si forms large precipitates in the Al matrix. For Al layers thinner than those of the Si, a nearly continuous Si film is formed on the outer surface. The thickness of this final Si film is approximately that of the original Al layer. The remaining Si and the Al form a two-phase layer between the outer Si film and the SiO2 substrate

Kinetics of Intramolecular Chemical Exchange by Initial Growth Rates of Spin Saturation Transfer Difference Experiments (SSTD NMR)

We report here the Initial Growth Rates SSTD NMR method, as a new powerful tool to obtain the kinetic parameters of intramolecular chemical exchange in challenging small organic and organometallic molecules