Electronic Fingerprints of Cr and V Dopants in the Topological Insulator Sb₂Te₃

By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb2Te3. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the codoped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V codoped TIs

Electronic fingerprints of Cr and V dopants in the topological insulator Sb₂Te₃

By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb₂Te₃. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the codoped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V codoped TIs.United States. Army Research Office (Award W911NF1810198

Crossover of the three-dimensional topological insulator Bi2 Se3 to the two-dimensional limit

A topological insulator1-9 is a new state of quantum matter that is characterized by a finite energy gap in the bulk and gapless modes flowing along the boundaries that are robust against disorder scattering. The topological protection of the surface state could be useful for both low-power electronics10 and error-tolerant quantum computing11,12. For a thin slab of three-dimensional topological insulator, the boundary modes from the opposite surfaces may be coupled by quantum tunnelling, so that a small, thickness-dependent gap is opened up13,15. Here we report such results from angle-resolved photoemission spectroscopy on Bi2 Se3 films of various thicknesses grown by molecular beam epitaxy. The energy gap opening is clearly seen when the thickness is below six quintuple layers. The gapped surface states also exhibit sizeable Rashba-type spin-orbit splitting because of the substrate-induced potential difference between the two surfaces. The tunable gap and the spin-orbit coupling make these topological thin films ideal for electronic and spintronic device applications. © 2010 Macmillan Publishers Limited. All rights reserved.link_to_subscribed_fulltex