AlAsSb avalanche photodiodes with a sub-mV/K temperature coefficient of breakdown voltage

The temperature dependence of dark current and avalanche gain were measured on AlAsSb p-i-n diodes with avalanche region widths of 80 and 230 nm. Measurements at temperatures ranging from 77 to 295 K showed that the dark current decreases rapidly with reducing temperature while avalanche gain exhibits a weak temperature dependence. No measurable band to band tunneling current was observed in the thinner diodes at an electric field of 1.07 MV/cm, corresponding to a bias of 95% of the breakdown voltage. Temperature coefficients of breakdown voltage of 0.95 and 1.47 mV/K were obtained from 80 and 230 nm diodes, respectively. These are significantly lower than a range of semiconductor materials with similar avalanche region widths. Our results demonstrated the potential of using thin AlAsSb avalanche regions to achieve low temperature coefficient of breakdown voltage without suffering from high band to band tunneling current

An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown

Dark current and avalanche gain M on AlAs0.56Sb0.44 (hereafter referred to as AlAsSb) separate absorption multiplication (SAM) avalanche photodiodes (APDs) were measured at temperatures ranging from 77 K to 300 K. To avoid possible ambiguity in breakdown voltage due to edge breakdown and tunneling current, a phase-sensitive detection method with a tightly focused light spot in the center of the device was employed to measure M accurately. An extrapolation of 1/M to zero was used to deduce the breakdown voltage, from which the temperature coefficient of breakdown voltage Cbd was derived. The value of Cbd 1/4 8 mV/K, obtained for AlAsSb SAM APDs, is much smaller than that for commercial Si and InGaAs/InP APDs, as well as other SAM APDs in the literature, demonstrating the potential of AlAsSb avalanche regions in improving the thermal stability of APDs

Escherichia coli K1 RS218 Interacts with Human Brain Microvascular Endothelial Cells via Type 1 Fimbria Bacteria in the Fimbriated State

Escherichia coli K1 is a major gram-negative organism causing neonatal meningitis. E. coli K1 binding to and invasion of human brain microvascular endothelial cells (HBMEC) are a prerequisite for E. coli penetration into the central nervous system in vivo. In the present study, we showed using DNA microarray analysis that E. coli K1 associated with HBMEC expressed significantly higher levels of the fim genes compared to nonassociated bacteria. We also showed that E. coli K1 binding to and invasion of HBMEC were significantly decreased with its fimH deletion mutant and type 1 fimbria locked-off mutant, while they were significantly increased with its type 1 fimbria locked-on mutant. E. coli K1 strains associated with HBMEC were predominantly type 1 fimbria phase-on (i.e., fimbriated) bacteria. Taken together, we showed for the first time that type 1 fimbriae play an important role in E. coli K1 binding to and invasion of HBMEC and that type 1 fimbria phase-on E. coli is the major population interacting with HBMEC

InGaAs/InAlAs Avalanche Photodiode With Low Dark Current for High-Speed Operation

Waveguide InGaAs/InAlAs avalanche photodiodes (APDs) with high bandwidths (>40 GHz) and low dark current (<;50 nA at 90% of breakdown voltage) were demonstrated. The excess noise is low, corresponding to k ~ 0.2 line in the local excess noise model. Using these values bit error rate (BER) was calculated to assess the potential of our APDs. Calculated sensitivities of -21.5 dBm at 25 Gb/s and -14.2 dBm at 40 Gb/s are predicted for a BER of 10-10. Analysis showed that with lower amplifier noise, the low dark current and low excess noise from our APDs are necessary to optimize the sensitivity

Thin Al 1− Ga As 0.56 Sb 0.44 diodes with extremely weak temperature dependence of avalanche breakdown

When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies. We have carried out such a study on thin Al1–xGaxAs0.56Sb0.44 p–i–n diode wafers (Ga composition from 0 to 0.15), plus measurements of avalanche gain and dark current. Based on data obtained from 77 to 297 K, the alloys Al1−xGaxAs0.56Sb0.44 exhibited weak temperature dependence of avalanche gain and breakdown voltage, with temperature coefficient approximately 0.86–1.08 mV K−1, among the lowest values reported for a number of semiconductor materials. Considering no significant tunnelling current was observed at room temperature at typical operating conditions, the alloys Al1−xGaxAs0.56Sb0.44 (Ga from 0 to 0.15) are suitable for InP substrates-based APDs that require excellent temperature stability without high tunnelling current

InGaAs/AlGaAsSb avalanche photodiode with high gain - bandwidth product

Increasing reliance on the Internet places greater and greater demands for high -speed optical communication systems. Increasing their data transfer rate allows more data to be transferred over existing links. With optical receivers being essential to all optical links, bandwidth performance of key components in receivers, such as avalanche photodiodes (APDs), must be improved. The APDs rely on In0.53Ga0.47As (grown lattice-matched to InP substrates) to efficiently absorb and detect the optical signals with 1310 or 1550 nm wavelength, the optimal wavelengths of operation for these optical links. Thus developing InP -compatible APDs with high gain-bandwidth product (GBP) is important to the overall effort of increasing optical links’ data transfer rate. Here we demonstrate a novel InGaAs/AlGaAsSb APD, grown on an InP substrate, with a GBP of 424 GHz, the highest value reported for InP -compatible APDs, which is clearly applicable to future optical communication systems at or above 10 Gb/s

InGaAs/InAlAs single photon avalanche diode for 1550 nm photons.

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K(-1). Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 10(8) Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured

Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP

The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon

X-ray diffraction measurements of the c-axis Debye-Waller factors of YBa2Cu3O7 and HgBa2CaCu2O6

We report the first application of x-rays to the measurement of the temperature dependent Bragg peak intensities to obtain Debye-Waller factors on high-temperature superconductors. Intensities of (0,0,l) peaks of YBa2Cu3O7 and HgBa2CaCu2O6 thin films are measured to obtain the c-axis Debye-Waller factors. While lattice constant and some Debye-Waller factor measurements on high Tc superconductors show anomalies at the transition temperature, our measurements by x-ray diffraction show a smooth transition of the c-axis Debye-Waller factors through T$_c$. This suggests that the dynamic displacements of the heavy elements along the c-axis direction in these compounds do not have anomalies at Tc. This method in combination with measurements by other techniques will give more details concerning dynamics of the lattice.Comment: 4 pages, 2 figures. To be published in Physical Review B (Brief Report