670 research outputs found

    On the role of pressure anisotropy for relativistic stars admitting conformal motion

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    We investigate the spacetime of anisotropic stars admitting conformal motion. The Einstein field equations are solved using different ansatz of the surface tension. In this investigation, we study two cases in details with the anisotropy as: [1] pt=nprp_t = n p_r [2] ptpr=18π(c1r2+c2)p_t - p_r = \frac{1}{8 \pi}(\frac{c_1}{r^2} + c_2) where, n, c1c_1 and c2c_2 are arbitrary constants. The solutions yield expressions of the physical quantities like pressure gradients and the mass.Comment: 21 pages, accepted for publication in 'Astrophysics and Space Science

    OL-051 Detect the gene expression influence after the interaction between HCV NS4A and CAML with microarray assay

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    Constitutive Equations and Processing Maps for 49MnVS3 Non-Quenched and Tempered Steel

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    Flow stress variations of 49MnVS3 non-quenched and tempered steel are studied in isothermal compression tests on a Gleeble-1500D thermal simulated test machine at a deformation temperatures of 950, 1000, 1150, and 1200° C, and strain rates of 0.1, 1, 5, and 10 s⁻¹, with obtaining the strain hardening exponent n and deformation activation energy Q of the alloy. Thus, the constitutive equations and processing maps of compression flow behavior for 49MnVS3 non-quenched and tempered steel at high temperatures are established. It shows that the peak stress is shownto significantly reduced with a decrease in the strain rate and increase in deformation temperature when the alloy deforms at high temperature, and the deformation activation energy is 350.98 kJ/mol. When the true strain of 49MnVS3 non-quenched and microalloyed steel high-temperature deformation is 0.5, the optimum process parameters of the alloy are determined to be 1150–1200° C for the deformation temperature and 2–10 s⁻¹ for the strain rate, based on the criterion that the process parameters of higher power dissipation efficiency values should be chosen in the dynamic recrystallization region as the best processing technology.Изменение напряжения течения незакаленной и закаленной стали 49MnVS3 исследовали путем проведения испытаний на изотермическое сжатие на установке Gleeble-1500D, моделирующей высокотемпературные условия, при температурах деформации 950, 1000, 1150, 1200° C и скоростях деформации 0,1; 1; 5 и 10 c⁻¹ с показателем степени деформационного упрочнения n и значением энергии активации деформации сплава Q. Установлены определяющие уравнения и схемы обработки компрессионного режима течения для незакаленной и закаленной стали 49MnVS3 при высокой температуре. Анализ уравнений показал, что максимальное значение напряжения значительно уменьшается при снижении скорости деформации и повышении температуры деформации, если сплав подвергается деформации при высокой температуре, а значение энергии активации деформации составляет 350,98 кДж/моль. Если значения истинной деформации незакаленной стали 49MnVS3 и высокотемпературной деформации микролегированной стали составляют 0,5, то оптимальные параметры процесса обработки сплава определяются при температуре деформирования 1150…1200° C и скорости деформации 2…10 c⁻¹ на основе критерия, который способствует отбору параметров с более высокой эффективностью рассеивания мощности в области динамической рекристаллизации в качестве оптимальной технологии обработки.Зміну напруження течії незагартованої і загартованої сталі 49MnVS3 досліджували шляхом проведення випробувань на ізотермічний стиск на установці Gleeble-1500D, що моделює високотемпературні умови, за температур деформації 950, 1000, 1150, 1200° C та швидкості деформації 0,1; 1; 5 і 10 c⁻¹ із показником степеня деформаційного зміцнення n і значенням енергії активації деформації сплаву Q. Установлено визначальні рівняння і схеми обробки компресійного режиму течії для незагартованої і загартованої сталі 49MnVS3 за високої температури. Аналіз рівнянь показав, що максимальне значення напруження значно зменшується зі зниженням швидкості деформації і підвищенні температури деформації, якщо сплав зазнає деформації за високої температури, а значення енергії активації деформації дорівнює 350,98 кДж/моль. Якщо значення істинної деформації незагартованої сталі 49MnVS3 і високотемпературної деформації мікролегованої сталі дорівнюють 0,5, то оптимальні параметри процесу обробки сплаву визначаються за температури деформування 1150...1200° C і швидкості деформації 2...10 c⁻¹ на основі критерію, який сприяє відбору параметрів із більш високою ефективністю розсіяння потужності в області динамічної рекристалізації як оптимальної технології обробки

    Mass measurements of neutron-deficient Y, Zr, and Nb isotopes and their impact on rp and νp nucleosynthesis processes

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    © 2018 The Authors. Published by Elsevier B.V. This manuscript is made available under the terms of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International licence (CC BY-NC-ND 4.0). For further details please see: https://creativecommons.org/licenses/by-nc-nd/4.0/Using isochronous mass spectrometry at the experimental storage ring CSRe in Lanzhou, the masses of 82Zr and 84Nb were measured for the first time with an uncertainty of ∼10 keV, and the masses of 79Y, 81Zr, and 83Nb were re-determined with a higher precision. The latter are significantly less bound than their literature values. Our new and accurate masses remove the irregularities of the mass surface in this region of the nuclear chart. Our results do not support the predicted island of pronounced low α separation energies for neutron-deficient Mo and Tc isotopes, making the formation of Zr–Nb cycle in the rp-process unlikely. The new proton separation energy of 83Nb was determined to be 490(400) keV smaller than that in the Atomic Mass Evaluation 2012. This partly removes the overproduction of the p-nucleus 84Sr relative to the neutron-deficient molybdenum isotopes in the previous νp-process simulations.Peer reviewe

    Measurements of the observed cross sections for e+ee^+e^-\to exclusive light hadrons containing π0π0\pi^0\pi^0 at s=3.773\sqrt s= 3.773, 3.650 and 3.6648 GeV

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    By analyzing the data sets of 17.3, 6.5 and 1.0 pb1^{-1} taken, respectively, at s=3.773\sqrt s= 3.773, 3.650 and 3.6648 GeV with the BES-II detector at the BEPC collider, we measure the observed cross sections for e+eπ+ππ0π0e^+e^-\to \pi^+\pi^-\pi^0\pi^0, K+Kπ0π0K^+K^-\pi^0\pi^0, 2(π+ππ0)2(\pi^+\pi^-\pi^0), K+Kπ+ππ0π0K^+K^-\pi^+\pi^-\pi^0\pi^0 and 3(π+π)π0π03(\pi^+\pi^-)\pi^0\pi^0 at the three energy points. Based on these cross sections we set the upper limits on the observed cross sections and the branching fractions for ψ(3770)\psi(3770) decay into these final states at 90% C.L..Comment: 7 pages, 2 figure

    Partial wave analysis of J/\psi \to \gamma \phi \phi

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    Using 5.8×107J/ψ5.8 \times 10^7 J/\psi events collected in the BESII detector, the radiative decay J/ψγϕϕγK+KKS0KL0J/\psi \to \gamma \phi \phi \to \gamma K^+ K^- K^0_S K^0_L is studied. The ϕϕ\phi\phi invariant mass distribution exhibits a near-threshold enhancement that peaks around 2.24 GeV/c2c^{2}. A partial wave analysis shows that the structure is dominated by a 0+0^{-+} state (η(2225)\eta(2225)) with a mass of 2.240.02+0.030.02+0.032.24^{+0.03}_{-0.02}{}^{+0.03}_{-0.02} GeV/c2c^{2} and a width of 0.19±0.030.04+0.060.19 \pm 0.03^{+0.06}_{-0.04} GeV/c2c^{2}. The product branching fraction is: Br(J/ψγη(2225))Br(η(2225)ϕϕ)=(4.4±0.4±0.8)×104Br(J/\psi \to \gamma \eta(2225))\cdot Br(\eta(2225)\to \phi\phi) = (4.4 \pm 0.4 \pm 0.8)\times 10^{-4}.Comment: 11 pages, 4 figures. corrected proof for journa

    Direct Measurements of Absolute Branching Fractions for D0 and D+ Inclusive Semimuonic Decays

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    By analyzing about 33 pb1\rm pb^{-1} data sample collected at and around 3.773 GeV with the BES-II detector at the BEPC collider, we directly measure the branching fractions for the neutral and charged DD inclusive semimuonic decays to be BF(D0μ+X)=(6.8±1.5±0.7)BF(D^0 \to \mu^+ X) =(6.8\pm 1.5\pm 0.7)% and BF(D+μ+X)=(17.6±2.7±1.8)BF(D^+ \to \mu^+ X) =(17.6 \pm 2.7 \pm 1.8)%, and determine the ratio of the two branching fractions to be BF(D+μ+X)BF(D0μ+X)=2.59±0.70±0.25\frac{BF(D^+ \to \mu^+ X)}{BF(D^0 \to \mu^+ X)}=2.59\pm 0.70 \pm 0.25

    A study of charged kappa in J/ψK±Ksππ0J/\psi \to K^{\pm} K_s \pi^{\mp} \pi^0

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    Based on 58×10658 \times 10^6 J/ψJ/\psi events collected by BESII, the decay J/ψK±Ksππ0J/\psi \to K^{\pm} K_s \pi^{\mp} \pi^0 is studied. In the invariant mass spectrum recoiling against the charged K(892)±K^*(892)^{\pm}, the charged κ\kappa particle is found as a low mass enhancement. If a Breit-Wigner function of constant width is used to parameterize the kappa, its pole locates at (849±7714+18)i(256±4022+46)(849 \pm 77 ^{+18}_{-14}) -i (256 \pm 40 ^{+46}_{-22}) MeV/c2c^2. Also in this channel, the decay J/ψK(892)+K(892)J/\psi \to K^*(892)^+ K^*(892)^- is observed for the first time. Its branching ratio is (1.00±0.190.32+0.11)×103(1.00 \pm 0.19 ^{+0.11}_{-0.32}) \times 10^{-3}.Comment: 14 pages, 4 figure

    Mechanical Deformation Induced in Si and GaN Under Berkovich Nanoindentation

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    Details of Berkovich nanoindentation-induced mechanical deformation mechanisms of single-crystal Si(100) and the metal-organic chemical-vapor deposition (MOCVD) derived GaN thin films have been systematic investigated by means of micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM) techniques. The XTEM samples were prepared by using focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The behaviors of the discontinuities displayed in the loading and unloading segments of the load-displacement curves of Si and GaN thin films performed with a Berkovich diamond indenter tip were explained by the observed microstructure features obtained from XTEM analyses. According to the observations of micro-Raman and XTEM, the nanoindentation-induced mechanical deformation is due primarily to the generation and propagation of dislocations gliding along the pyramidal and basal planes specific to the hexagonal structure of GaN thin films rather than by indentation-induced phase transformations displayed in Si
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