18 research outputs found

    Strain-Controlled Spin Wave Excitation and Gilbert Damping in Flexible Co2FeSi Films Activated by Femtosecond Laser Pulse

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    The dynamic response of magnetic order to optical excitation at sub-picosecond scale has offered an intriguing alternative for magnetism manipulation. Such ultrafast optical manipulation of magnetism has become a fundamental challenging topic with high implications for future spintronics. Here, this study demonstrates such manipulation in Co2FeSi films grown on flexible polyimide substrate, and demonstrates how the magneto-optical interaction can be modified by using strain engineering which in turn triggers the excitation of both dipolar and exchange spin waves modes. Furthermore, Gilbert damping and spin-orbit coupling in Co2FeSi can both be tuned significantly by altering the magnitude and type of applied strain, suggesting an appealing way to manipulate spin wave propagation. These results develop the optical manipulation magnetism into the field of spin wave dynamics, and open a new direction in the application of spin orbitronics and magnonics devices using strain engineering

    Maskless Surface Modification of Polyurethane Films by an Atmospheric Pressure He/O2 Plasma Microjet for Gelatin Immobilization

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    A localized maskless modification method of polyurethane (PU) films through an atmospheric pressure He/O2 plasma microjet (APPμJ) was proposed. The APPμJ system combines an atmospheric pressure plasma jet (APPJ) with a microfabricated silicon micronozzle with dimension of 30 μm, which has advantages of simple structure and low cost. The possibility of APPμJ in functionalizing PU films with hydroxyl (–OH) groups and covalent grafting of gelatin for improving its biocompatibility was demonstrated. The morphologies and chemical compositions of the modified surface were analyzed by scanning electronic microscopy (SEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). The fluorescent images show the modified surface can be divided into four areas with different fluorescence intensity from the center to the outside domain. The distribution of the rings could be controlled by plasma process parameters, such as the treatment time and the flow rate of O2. When the treatment time is 4 to 5 min with the oxygen percentage of 0.6%, the PU film can be effectively local functionalized with the diameter of 170 μm. In addition, the modification mechanism of PU films by the APPμJ is investigated. The localized polymer modified by APPμJ has potential applications in the field of tissue engineering

    Separated Type Atmospheric Pressure Plasma Microjets Array for Maskless Microscale Etching

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    Maskless etching approaches such as microdischarges and atmospheric pressure plasma jets (APPJs) have been studied recently. Nonetheless, a simple, long lifetime, and efficient maskless etching method is still a challenge. In this work, a separated type maskless etching system based on atmospheric pressure He/O2 plasma jet and microfabricated Micro Electro Mechanical Systems (MEMS) nozzle have been developed with advantages of simple-structure, flexibility, and parallel processing capacity. The plasma was generated in the glass tube, forming the micron level plasma jet between the nozzle and the surface of polymer. The plasma microjet was capable of removing photoresist without masks since it contains oxygen reactive species verified by spectra measurement. The experimental results illustrated that different features of microholes etched by plasma microjet could be achieved by controlling the distance between the nozzle and the substrate, additive oxygen ratio, and etch time, the result of which is consistent with the analysis result of plasma spectra. In addition, a parallel etching process was also realized by plasma microjets array

    Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching

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    The prevention of glow-to-arc transition exhibited by micro dielectric barrier discharge (MDBD), as well as its long lifetime, has generated much excitement across a variety of applications. Silicon nitride (SiNx) is often used as a dielectric barrier layer in DBD due to its excellent chemical inertness and high electrical permittivity. However, during fabrication of the MDBD devices with multilayer films for maskless nano etching, the residual stress-induced deformation may bring cracks or wrinkles of the devices after depositing SiNx by plasma enhanced chemical vapor deposition (PECVD). Considering that the residual stress of SiNx can be tailored from compressive stress to tensile stress under different PECVD deposition parameters, in order to minimize the stress-induced deformation and avoid cracks or wrinkles of the MDBD device, we experimentally measured stress in each thin film of a MDBD device, then used numerical simulation to analyze and obtain the minimum deformation of multilayer films when the intrinsic stress of SiNx is −200 MPa compressive stress. The stress of SiNx can be tailored to the desired value by tuning the deposition parameters of the SiNx film, such as the silane (SiH4)–ammonia (NH3) flow ratio, radio frequency (RF) power, chamber pressure, and deposition temperature. Finally, we used the optimum PECVD process parameters to successfully fabricate a MDBD device with good quality
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