11 research outputs found
Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wavefunction. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene’s Dirac electrons in a particular quantum chiral state in a selected valley
WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature
Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for optoelectronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2- and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250× more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such different temperature dependences to the inverted sign of spin–orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark
The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals
The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field magneto-optics to investigate the metal chalcogenide InSe, a recent addition to the family of vdW layered crystals, which transforms from a direct to an indirect band gap semiconductor as the number of layers is reduced. We investigate this direct-to-indirect bandgap crossover, demonstrate a highly tuneable optical response from the near infrared to the visible spectrum with decreasing layer thickness down to 2 layers, and report quantum dot-like optical emissions distributed over a wide range of energy. Our analysis also indicates that electron and exciton effective masses are weakly dependent on the layer thickness and are significantly smaller than in other vdW crystals. These properties are unprecedented within the large family of vdW crystals and demonstrates the potential of InSe for electronic and photonic technologies
Statistics of pre-localized states in disordered conductors
The distribution function of local amplitudes of single-particle states in
disordered conductors is calculated on the basis of the supersymmetric
-model approach using a saddle-point solution of its reduced version.
Although the distribution of relatively small amplitudes can be approximated by
the universal Porter-Thomas formulae known from the random matrix theory, the
statistics of large amplitudes is strongly modified by localization effects. In
particular, we find a multifractal behavior of eigenstates in 2D conductors
which follows from the non-integer power-law scaling for the inverse
participation numbers (IPN) with the size of the system. This result is valid
for all fundamental symmetry classes (unitary, orthogonal and symplectic). The
multifractality is due to the existence of pre-localized states which are
characterized by power-law envelopes of wave functions, , . The pre-localized states in short quasi-1D wires have the
power-law tails , too, although their IPN's
indicate no fractal behavior. The distribution function of the
largest-amplitude fluctuations of wave functions in 2D and 3D conductors has
logarithmically-normal asymptotics.Comment: RevTex, 17 twocolumn pages; revised version (several misprint
corrected
Tunable Berry curvature and valley and spin Hall effect in bilayer MoS2
The chirality of electronic Bloch bands is responsible for many intriguing properties of layered two-dimensional materials. We show that in bilayers of transition metal dichalcogenides (TMDCs), unlike in few-layer graphene and monolayer TMDCs, both intralayer and interlayer couplings give important contributions to the Berry curvature in the K and -K valleys of the Brillouin zone. The interlayer contribution leads to the stacking dependence of the Berry curvature and we point out the differences between the commonly available 3R type and 2H type bilayers. Due to the interlayer contribution, the Berry curvature becomes highly tunable in double gated devices. We study the dependence of the valley Hall and spin Hall effects on the stacking type and external electric field. Although the valley and spin Hall conductivities are not quantized, in MoS2 2H bilayers, they may change sign as a function of the external electric field, which is reminiscent of the behavior of lattice Chern insulators
0-? transition in superconductor-ferromagnet-superconductor junctions with strongly spin-dependent scattering
Applied Science
Evidence of the triangular lattice of crystallized electrons from time resolved luminescence
We show that the recombination kinetics of two-dimensional electrons with acceptor bound holes is a sensitive probe of the local spatial structure of the electronic system. Using the time resolved magnetoluminescence, we extract the regime of the electron Wigner solid and establish its local configuration consistent with the triangular lattice model. Up to the melting point, the amplitude of the thermal vibrations of the electron crystal is derived from the temperature dependence of the recombination kinetics
Nonlinear Transport Properties of Quantum Dots
The influence of excited levels on nonlinear transport properties of a
quantum dot weakly coupled to leads is studied using a master--equation
approach. A charging model for the dot is compared with a quantum mechanical
model for interacting electrons. The current--voltage curve shows Coulomb
blockade and additional finestructure that is related to the excited states of
the correlated electrons. Unequal coupling to the leads causes asymmetric
conductance peaks. Negative differential conductances are predicted due to the
existence of excited states with different spins.Comment: 11 pages (excl. Figures), 3 Figures are available on request, RevTe