A Fast Counting Method for 6-motifs with Low Connectivity

A $k$-motif (or graphlet) is a subgraph on $k$ nodes in a graph or network. Counting of motifs in complex networks has been a well-studied problem in network analysis of various real-word graphs arising from the study of social networks and bioinformatics. In particular, the triangle counting problem has received much attention due to its significance in understanding the behavior of social networks. Similarly, subgraphs with more than 3 nodes have received much attention recently. While there have been successful methods developed on this problem, most of the existing algorithms are not scalable to large networks with millions of nodes and edges. The main contribution of this paper is a preliminary study that genaralizes the exact counting algorithm provided by Pinar, Seshadhri and Vishal to a collection of 6-motifs. This method uses the counts of motifs with smaller size to obtain the counts of 6-motifs with low connecivity, that is, containing a cut-vertex or a cut-edge. Therefore, it circumvents the combinatorial explosion that naturally arises when counting subgraphs in large networks

Electrical compensation and cation vacancies in Al rich Si-doped AlGaN

We report positron annihilation results on vacancy defects in Si-doped Al0.90Ga0.10N alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and temperature-dependent Doppler broadening measurements, we identify negatively charged in-grown cation vacancies in the concentration range from below 1 x 10 16 cm(-3) to 2 x 10 18 cm(-3) in samples with a high C content, strongly correlated with the Si doping level in the samples ranging from 1 x 10 17 cm(-3) to 7 x 10 18 cm(-3). On the other hand, we find predominantly neutral cation vacancies with concentrations above 5 x 10 18 cm(-3) in samples with a low C content. The cation vacancies are important as compensating centers only in material with a high C content at high Si doping levels.Peer reviewe

Low resistance n-contact for UVC LEDs by a two-step plasma etching process

The impact of plasma etching on the formation of low-resistance n-contacts on the AlGaN:Si current spreading layer during the chip fabrication of ultraviolet light-emitting diodes (UV LEDs) emitting at 265 nm is investigated. A two-step plasma etching process with a first rapid etching using BCl3/Cl2 gas mixture and a second slow etching step using pure Cl2 gas has been developed. The etching sequence provides smooth mesa side-walls and an n-AlGaN surface with reduced surface damage. Ohmic n-contacts with a contact resistivity of 3.5 10-4 Ωcm2 are obtained on Si-doped Al0.65Ga0.35N layers and the operating voltages of the UVC LEDs were reduced by 2 V for a current of 20 mA. © 2020 The Author(s). Published by IOP Publishing Ltd

Phase I/II study of resection and intraoperative cesium-131 radioisotope brachytherapy in patients with newly diagnosed brain metastases.

OBJECT: Resected brain metastases have a high rate of local recurrence without adjuvant therapy. Adjuvant whole-brain radiotherapy (WBRT) remains the standard of care with a local control rate \u3e 90%. However, WBRT is delivered over 10-15 days, which can delay other therapy and is associated with acute and long-term toxicities. Permanent cesium-131 ((131)Cs) implants can be used at the time of metastatic resection, thereby avoiding the need for any additional therapy. The authors evaluated the safety, feasibility, and efficacy of a novel therapeutic approach with permanent (131)Cs brachytherapy at the resection for brain metastases. METHODS: After institutional review board approval was obtained, 24 patients with a newly diagnosed metastasis to the brain were accrued to a prospective protocol between 2010 and 2012. There were 10 frontal, 7 parietal, 4 cerebellar, 2 occipital, and 1 temporal metastases. Histology included lung cancer (16), breast cancer (2), kidney cancer (2), melanoma (2), colon cancer (1), and cervical cancer (1). Stranded (131)Cs seeds were placed as permanent volume implants. The prescription dose was 80 Gy at a 5-mm depth from the resection cavity surface. Distant metastases were treated with stereotactic radiosurgery (SRS) or WBRT, depending on the number of lesions. The primary end point was local (resection cavity) freedom from progression (FFP). Secondary end points included regional FFP, distant FFP, median survival, overall survival (OS), and toxicity. RESULTS: The median follow-up was 19.3 months (range 12.89-29.57 months). The median age was 65 years (range 45-84 years). The median size of resected tumor was 2.7 cm (range 1.5-5.5 cm), and the median volume of resected tumor was 10.31 cm(3) (range 1.77-87.11 cm(3)). The median number of seeds used was 12 (range 4-35), with a median activity of 3.82 mCi per seed (range 3.31-4.83 mCi) and total activity of 46.91 mCi (range 15.31-130.70 mCi). Local FFP was 100%. There was 1 adjacent leptomeningeal recurrence, resulting in a 1-year regional FFP of 93.8% (95% CI 63.2%-99.1%). One-year distant FFP was 48.4% (95% CI 26.3%-67.4%). Median OS was 9.9 months (95% CI 4.8 months, upper limit not estimated) and 1-year OS was 50.0% (95% CI 29.1%-67.8%). Complications included CSF leak (1), seizure (1), and infection (1). There was no radiation necrosis. CONCLUSIONS: The use of postresection permanent (131)Cs brachytherapy implants resulted in no local recurrences and no radiation necrosis. This treatment was safe, well tolerated, and convenient for patients, resulting in a short radiation treatment course, high response rate, and minimal toxicity. These findings merit further study with a multicenter trial

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics

Timing of detachment faulting in the Bullfrog Hills and Bare Mountain area, southwest Nevada: Inferences from 40Ar/39Ar, K-Ar, U-Pb and fission track thermochronology

Crustal extension in the Bullfrog Hills and Bare Mountain area of southwest Nevada is associated with movement along a regional detachment fault. Normal faulting in the upper plate and rapid cooling (denudation) of the lower plate were coeval with Miocene silicic volcanism and with west-northwest transport along the detachment fault. A west-northwest progression of tilting along upper plate normal faults is indicated by ages of the volcanic rocks in relation to angular unconformities. Near the breakaway, tilting in the upper plate occurred between 12.7 and 11.6 Ma, continued less strongly past 10.7 Ma, and was over by 8.2 Ma. Ten to 20 km west of the breakaway, tilting occurred between 10.7 and 10.33 Ma, continued less strongly after 10.33 Ma, and was over by 8.1 Ma. The cooling histories of the lower plate metamorphic rocks were determined by thermochronologic dating methods: K-Ar and Ar-40/(39)A on muscovite, biotite, and hornblende, Ar-40/(39)A on K-feldspar, U-Pb on apatite, zircon, and sphene, and fission track on apatite, zircon, and sphene. Lower plate rocks 10 km west of the breakaway cooled slowly from Early Cretaceous lower-amphibolite facies conditions through 350+/-50 degrees to 300+/-50 degrees C between 57 and 38 Ma, then cooled rapidly from 205+/-50 degrees to 120+/-5O degrees C between 12.6+/-1.6 and 11.1+/-1.9 Ma. Lower plate rocks 20 km west of the breakaway cooled slowly from Early Cretaceous upper-amphibolite facies conditions through 500+/-50 degrees C at 78-67 Ma, passed through 350+/-50 degrees to 300+/-50 degrees C between 16.3+/-0.4 and 10.5+/-0.3 Ma, then cooled rapidly from 285+/-50 degrees to 120+/-50 degrees C between 10.2 and 8.6 Ma. Upper plate tilting and rapid cooling (denudation) of the lower plate occurred simultaneously in the respective areas. The early slow-cooling part of the lower plate thermal histories was probably related to erosion at the Earth's surface, which stripped off about 9 km of material in 50 to 100 m.y. The results indicate an initial fault dip greater than or equal to 30 degrees and a 12 mm yr(-1) west-northwest migration of the locus of rapid tilting in the upper plate

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

We present overgrowth of nano-patterned sapphire with different offcut angles by metalorganic vapor phase epitaxy. Hexagonal arrays of nano-pillars were prepared via Displacement Talbot Lithography and dry-etching. 6.6 µm crack-free and fully coalesced AlN was grown on such substrates. Extended defect analysis comparing X-ray diffraction, electron channeling contrast imaging and selective defect etching revealed a threading dislocation density of about 109 cm-2. However, for c-plane sapphire offcut of 0.2° towards m direction the AlN surface shows step bunches with a height of 10 nm. The detrimental impact of these step bunches on subsequently grown AlGaN multi-quantum-wells is investigated by cathodoluminescence and transmission electron microscopy. By reducing the sapphire offcut to 0.1° the formation of step bunches is successfully suppressed. On top of such a sample an AlGaN-based UVC LED heterostructure is realized emitting at 265 nm and showing an emission power of 0.81 mW at 20 mA (corresponds to an external quantum efficiency of 0.86 %)

Comparing biological networks via graph compression

<p>Abstract</p> <p>Background</p> <p>Comparison of various kinds of biological data is one of the main problems in bioinformatics and systems biology. Data compression methods have been applied to comparison of large sequence data and protein structure data. Since it is still difficult to compare global structures of large biological networks, it is reasonable to try to apply data compression methods to comparison of biological networks. In existing compression methods, the uniqueness of compression results is not guaranteed because there is some ambiguity in selection of overlapping edges.</p> <p>Results</p> <p>This paper proposes novel efficient methods, CompressEdge and CompressVertices, for comparing large biological networks. In the proposed methods, an original network structure is compressed by iteratively contracting identical edges and sets of connected edges. Then, the similarity of two networks is measured by a compression ratio of the concatenated networks. The proposed methods are applied to comparison of metabolic networks of several organisms, <it>H. sapiens, M. musculus, A. thaliana, D. melanogaster, C. elegans, E. coli, S. cerevisiae,</it> and <it>B. subtilis,</it> and are compared with an existing method. These results suggest that our methods can efficiently measure the similarities between metabolic networks.</p> <p>Conclusions</p> <p>Our proposed algorithms, which compress node-labeled networks, are useful for measuring the similarity of large biological networks.</p

Baseline values from the electrocardiograms of children and adolescents with ADHD

<p>Abstract</p> <p>Background</p> <p>An important issue in pediatric pharmacology is the determination of whether medications affect cardiac rhythm parameters, in particular the QT interval, which is a surrogate marker for the risk of adverse cardiac events and sudden death. To evaluate changes while on medication, it is useful to have a comparison of age appropriate values while off medication. The present meta-analysis provides baseline ECG values (i.e., off medication) from approximately 6000 children and adolescents with attention-deficit/hyperactivity disorder (ADHD).</p> <p>Methods</p> <p>Subjects were aged 6–18 years and participated in global trials within the atomoxetine registration program. Patients were administered a 12-lead ECG at study screening and cardiac rhythm parameters were recorded. Baseline QT intervals were corrected for heart rate using 3 different methods: Bazett's, Fridericia's, and a population data-derived formula.</p> <p>Results</p> <p>ECG data were obtained from 5289 North American and 641 non-North American children and adolescents. Means and percentiles are presented for each ECG measure and QTc interval based on pubertal status as defined by age and sex. Prior treatment history with stimulants and racial origin (Caucasian) were each associated with significantly longer mean QTc values.</p> <p>Conclusion</p> <p>Baseline ECG and QTc data from almost 6000 children and adolescents presenting with ADHD are provided to contribute to the knowledge base regarding mean values for pediatric cardiac parameters. Consistent with other studies of QT interval in children and adolescents, Bazett correction formula appears to overestimate the prevalence of prolonged QTc in the pediatric population.</p

Spatially-resolved optical and structural properties of semi-polar [Formula: see text] Al x Ga1-x N with x up to 0.56

Pushing the emission wavelength of efficient ultraviolet (UV) emitters further into the deep-UV requires material with high crystal quality, while also reducing the detrimental effects of built-in electric fields. Crack-free semi-polar [Formula: see text] Al x Ga1-x N epilayers with AlN contents up to x = 0.56 and high crystal quality were achieved using an overgrowth method employing GaN microrods on m-sapphire. Two dominant emission peaks were identified using cathodoluminescence hyperspectral imaging. The longer wavelength peak originates near and around chevron-shaped features, whose density is greatly increased for higher contents. The emission from the majority of the surface is dominated by the shorter wavelength peak, influenced by the presence of basal-plane stacking faults (BSFs). Due to the overgrowth technique BSFs are bunched up in parallel stripes where the lower wavelength peak is broadened and hence appears slightly redshifted compared with the higher quality regions in-between. Additionally, the density of threading dislocations in these region is one order of magnitude lower compared with areas affected by BSFs as ascertained by electron channelling contrast imaging. Overall, the luminescence properties of semi-polar AlGaN epilayers are strongly influenced by the overgrowth method, which shows that reducing the density of extended defects improves the optical performance of high AlN content AlGaN structures