Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films

Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data with mobility spectrum analysis. A substantial difference in the effects of arsenic implantation and post-implantation activation annealing on the properties of implanted layers and photodiode ‘base’ layers in Hg0.7Cd0.3Te and Hg0.8Cd0.2Te films was established and tentatively explained