Linguistik im geteilten Deutschland

Der Aufsatz skizziert die Linguistik – mit Schwerpunkt auf der germanistischen Linguistik – in ihren wichtigsten theoretischen Richtungen in Deutschland zur Zeit der Teilung (1945-1989, teilweise auch darüber hinaus). Dabei wird auch auf Entwicklungen im internationalen Maßstab eingegangen, die ihren Ursprung bereits im 19. Jhd. haben. Behandelt werden vor allem Strukturalismus und Generative Grammatik, aber auch die Valenztheorie (im Rahmen der Dependenz- und der Konstituenzgrammatik), Sprechakttheorie und kommunikativ-pragmatische Linguistik. Wegen der Fülle der zu besprechenden Werke und Autoren konzentrieren sich die Verfasser auf möglichst repräsentative Beispiele.The article gives an overview of the most important theoretical approaches in linguistics – concentrating on linguistics of German – during the period of the division of Germany into two states (1945-1989 and after). The global development of linguistics (from the 19th century up to now) is taken into account. The description comprises structuralism and generative grammar as well as valency theory (within the framework of dependency and constituent grammar) as well as speech act theory and communicative pragmatic linguistics. Because of the wealth of authors and works pertinent to this period, emphasis is put on the most representative examples.Artykuł dotyczy lingwistyki – głównie lingwistyki germanistycznej – i jej najważniejszych kierunków teoretycznych w czasach podziału Niemiec (1945-1989, częściowo nawet lat późniejszych). Uwzględniony został również rozwój lingwistyki w skali międzynarodowej, którego początek przypada na wiek dziewiętnasty. Omówione zostały przede wszystkim strukturalizm i gramatyka generatywna, także teoria walencji (w ramach gramatyki dependencyjnej i gramatyki składników bezpośrednich), teoria aktów mowy oraz lingwistyka komunikatywno-pragmatyczna. Ze względu na dużą ilość prac dotyczących tematu, autorzy niniejszego artykułu koncentrują się na możliwie reprezentatywnych przykładach

Fast scatterometric measurement of periodic surface structures in plasma-etching processes

To satisfy the continuous demand of ever smaller feature sizes, plasma etching technologies in microelectronics processing enable the fabrication of device structures with dimensions in the nanometer range. In a typical plasma etching system a plasma phase of a selected etching gas is activated, thereby generating highly energetic and reactive gas species which ultimately etch the substrate surface. Such dry etching processes are highly complex and require careful adjustment of many process parameters to meet the high technology requirements on the structure geometry. In this context, real-time access of the structure's dimensions during the actual plasma process would be of great benefit by providing full dimension control and film integrity in real-time. In this paper, we evaluate the feasibility of reconstructing the etched dimensions with nanometer precision from reflectivity spectra of the etched surface, which are measured in real-time throughout the entire etch process. We develop and test a novel and fast reconstruction algorithm, using experimental reflection spectra taken about every second during the etch process of a periodic 2D model structure etched into a silicon substrate. Unfortunately, the numerical simulation of the reflectivity by Maxwell solvers is time consuming since it requires separate time-harmonic computations for each wavelength of the spectrum. To reduce the computing time, we propose that a library of spectra should be generated before the etching process. Each spectrum should correspond to a vector of geometry parameters s.t. the vector components scan the possible range of parameter values for the geometrical dimensions. We demonstrate that by replacing the numerically simulated spectra in the reconstruction algorithm by spectra interpolated from the library, it is possible to compute the geometry parameters in times less than a second. Finally, to also reduce memory size and computing time for the library, we reduce the scanning of the parameter values to a sparse grid

Fast scatterometric measurement of periodic surface structures plasma-etching processes

To satisfy the continuous demand of ever smaller feature sizes, plasma etching technologies in microelectronics processing enable the fabrication of device structures with dimensions in the nanometer range. In a typical plasma etching system a plasma phase of a selected etching gas is activated, thereby generating highly energetic and reactive gas species which ultimately etch the substrate surface. Such dry etching processes are highly complex and require careful adjustment of many process parameters to meet the high technology requirements on the structure geometry. In this context, real-time access of the structures dimensions during the actual plasma process would be of great benefit by providing full dimension control and film integrity in real-time. In this paper, we evaluate the feasibility of reconstructing the etched dimensions with nanometer precision from reflectivity spectra of the etched surface, which are measured in real-time throughout the entire etch process. We develop and test a novel and fast reconstruction algorithm, using experimental reflection spectra taken about every second during the etch process of a periodic 2D model structure etched into a silicon substrate. Unfortunately, the numerical simulation of the reflectivity by Maxwell solvers is time consuming since it requires separate time-harmonic computations for each wavelength of the spectrum. To reduce the computing time, we propose that a library of spectra should be generated before the etching process. Each spectrum should correspond to a vector of geometry parameters s.t. the vector components scan the possible range of parameter values for the geometrical dimensions. We demonstrate that by replacing the numerically simulated spectra in the reconstruction algorithm by spectra interpolated from the library, it is possible to compute the geometry parameters in times less than a second. Finally, to also reduce memory size and computing time for the library, we reduce the scanning of the parameter values to a sparse grid

Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis

We investigate the temperature dependence of the Ge Raman mode strain–phonon coefficient in Ge/Si heteroepitaxial layers. By analyzing the temperature-dependent evolution of both the Raman Ge-Ge line and of the Ge lattice strain, we obtain a linear dependence of the strain–phonon coefficient as a function of temperature. Our findings provide an efficient method for capturing the temperature-dependent strain relaxation mechanism in heteroepitaxial systems. Furthermore, we show that the rather large variability reported in the literature for the strain–phonon coefficient values might be due to the local heating of the sample due to the excitation laser used in µ-Raman experiments. © 2020 The Authors. Journal of Raman Spectroscopy published by John Wiley & Sons Lt

temperature dependence of strain phonon coefficient in epitaxial ge si 001 a comprehensive analysis

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Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 A/W for white LED light at 3 mW/cm2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications.Comment: Research paper, 22 pages, 7 figure

Quantitative protein sensing with germanium THz-antennas manufactured using CMOS processes

The development of a CMOS manufactured THz sensing platform could enable the integration of state-of-the-art sensing principles with the mixed signal electronics ecosystem in small footprint, low-cost devices. To this aim, in this work we demonstrate a label-free protein sensing platform using highly doped germanium plasmonic antennas realized on Si and SOI substrates and operating in the THz range of the electromagnetic spectrum. The antenna response to different concentrations of BSA shows in both cases a linear response with saturation above 20 mg/mL. Ge antennas on SOI substrates feature a two-fold sensitivity as compared to conventional Si substrates, reaching a value of 6 GHz/(mg/mL), which is four-fold what reported using metal-based metamaterials. We believe that this result could pave the way to a low-cost lab-on-a-chip biosensing platform

Global transition path search for dislocation formation in Ge on Si(001)

Global optimization of transition paths in complex atomic scale systems is addressed in the context of misfit dislocation formation in a strained Ge film on Si(001). Such paths contain multiple intermediate minima connected by minimum energy paths on the energy surface emerging from the atomic interactions in the system. The challenge is to find which intermediate states to include and to construct a path going through these intermediates in such a way that the overall activation energy for the transition is minimal. In the numerical approach presented here, intermediate minima are constructed by heredity transformations of known minimum energy structures and by identifying local minima in minimum energy paths calculated using a modified version of the nudged elastic band method. Several mechanisms for the formation of a 90{\deg} misfit dislocation at the Ge-Si interface are identified when this method is used to construct transition paths connecting a homogeneously strained Ge film and a film containing a misfit dislocation. One of these mechanisms which has not been reported in the literature is detailed. The activation energy for this path is calculated to be 26% smaller than the activation energy for half loop formation of a full, isolated 60{\deg} dislocation. An extension of the common neighbor analysis method involving characterization of the geometrical arrangement of second nearest neighbors is used to identify and visualize the dislocations and stacking faults

Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy

Gallium phosphide (GaP) is a III–V semiconductor with remarkable optoelectronic properties, and it has almost the same lattice constant as silicon (Si). However, to date, the monolithic and large-scale integration of GaP devices with silicon remains challenging. In this study, we present a nanoheteroepitaxy approach using gas-source molecular-beam epitaxy for selective growth of GaP islands on Si nanotips, which were fabricated using complementary metal–oxide semiconductor (CMOS) technology on a 200 mm n-type Si(001) wafer. Our results show that GaP islands with sizes on the order of hundreds of nanometers can be successfully grown on CMOS-compatible wafers. These islands exhibit a zinc-blende phase and possess optoelectronic properties similar to those of a high-quality epitaxial GaP layer. This result marks a notable advancement in the seamless integration of GaP-based devices with high scalability into Si nanotechnology and integrated optoelectronics.Deutsche Forschungsgemeinschaft 10.13039/501100001659European Commission 10.13039/501100008530Peer Reviewe

Si-based n-type THz Quantum Cascade Emitter

Employing electronic transitions in the conduction band of semiconductor heterostructures paves a way to integrate a light source into silicon-based technology. To date all electroluminescence demonstrations of Si-based heterostructures have been p-type using hole-hole transitions. In the pathway of realizing an n-type Ge/SiGe terahertz quantum cascade laser, we present electroluminescence measurements of quantum cascade structures with top diffraction gratings. The devices for surface emission have been fabricated out of a 4-well quantum cascade laser design with 30 periods. An optical signal was observed with a maximum between 8-9 meV and full width at half maximum of roughly 4 meV