2,704 research outputs found

    Damage buildup in GaN under ion bombardment

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    The damage buildup until amorphization in wurtzite GaN films under keV Light(C-12) and heavy (Au-197) ion bombardment at room and liquid nitrogen (LN2) temperatures is studied by Rutherford backscattering/channeling (RBS/C) spectrometry and transmission electron microscopy (TEM). The effect of beam flux on implantation damage in GaN is reported. A marked similarity between damage buildup for Light and heavy ion bombardment regimes is observed. The results point to substantial dynamic annealing of irradiation defects even during heavy ion bombardment at LN2 temperature. Amorphization starts from the GaN surface with increasing ion dose for both LN2 and room-temperature bombardment with light or heavy ions. A strong surface defect peak, seen by RBS/C, arises from an amorphous layer at the GaN surface, as indicated by TEM. The origin of such an amorphous layer is attributed to the trapping of mobile point defects by the GaN surface, as suggested by the flux behavior. However, in the samples implanted with light ions to low doses (1 X 10(15) cm(-2)), no amorphous layer on the GaN surface is revealed by TEM. Damage buildup is highly sig-modal for LN: temperature irradiation with light or heavy ions. Formation of planar defects in the crystal bulk is assumed to provide a "nucleation site" for amorphization with increasing ion dose during irradiation at LN2 temperature. For room-temperature bombardment with heavy ions. the damage in the GaN bulk region saturates at a level lower than that of the amorphous phase, as measured by RBS/C, and amorphization proceeds From the GaN surface with increasing ion dose. For such a saturation regime at room temperature, implantation damage in the bulk consists of point-defect clusters and planar defects which are parallel to the basal plane of the GaN film. Various defect interaction processes in GaN during ion bombardment are proposed to explain the observed somewhat unexpected behavior of disorder buildup

    Early Experience with Ponseti Club Foot Management in Lagos, Nigeria

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    Effect of ion species on the accumulation of ion-beam damage in GaN

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    Wurtzite GaN epilayers bombarded with a wide range of ion species (10 keV H-1, 40 keV C-12, 50 keV O-16, 600 keV Si-28, 130 keV Cu-63, 200 keV Ag-107, 300 keV Au-197, and 500 keV Bi-209) are studied by a combination of Rutherford backscattering/channeling (RBS/C) spectrometry and cross-sectional transmission electron microscopy. Results show that strong dynamic annealing processes lead to a complex dependence of the damage-buildup behavior in GaN on ion species. For room-temperature bombardment with different ion species, bulk disorder, as measured by RBS/C, saturates at some level that is below the random level, and amorphization proceeds layer-by-layer from the GaN surface with increasing ion dose. The saturation level of bulk disorder depends on implant conditions and is much higher for light-ion bombardment than for the heavy-ion irradiation regime. In the case of light ions, when ion doses needed to observe significant lattice disorder in GaN are large (greater than or similar to 10(16) cm(-2)), chemical effects of implanted species dominate. Such implanted atoms appear to stabilize an amorphous phase in GaN and/or to act as effective traps for ion-beam-generated mobile point defects and enhance damage buildup. In particular, the presence of a large conce ntration of carbon in GaN strongly enhances the accumulation of implantation-produced disorder. For heavier ions, where chemical effects of implanted species seem to be negligible, an increase in the density of collision cascades strongly increases the level of implantation-produced lattice disorder in the bulk as well as the rate of layer-by-layer amorphization proceeding from the surface. Such an increase in stable damage and the rate of planar amorphization is attributed to (i) an increase in the defect clustering efficiency with increasing density of ion-beam-generated defects and/or (ii) a superlinear dependence of ion-beam-generated defects, which survive cascade quenching, on the density of collision cascades. Physical mechanisms responsible for such a superlinear dependence of ion-beam-generated defects on collision cascade density are considered. Mechanisms of surface and bulk amorphization in GaN are also discussed

    Classification of crystallization outcomes using deep convolutional neural networks

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    The Machine Recognition of Crystallization Outcomes (MARCO) initiative has assembled roughly half a million annotated images of macromolecular crystallization experiments from various sources and setups. Here, state-of-the-art machine learning algorithms are trained and tested on different parts of this data set. We find that more than 94% of the test images can be correctly labeled, irrespective of their experimental origin. Because crystal recognition is key to high-density screening and the systematic analysis of crystallization experiments, this approach opens the door to both industrial and fundamental research applications

    Dynamic annealing in III-nitrides under ion bombardment

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    We study the evolution of structural defects in AlxGa1-xN films (with x=0.0-0.6) bombarded with kilo-electron-volt heavy ions at 77 and 300 K. We use a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results show that an increase in Al content not only strongly enhances dynamic annealing processes but can also change the main features of the amorphization behavior. In particular, the damage buildup behavior at 300 K is essentially similar for all the AlGaN films studied. Ion-beam-produced disorder at 300 K accumulates preferentially in the crystal bulk region up to a certain saturation level (similar to50%-60% relative disorder). Bombardment at 300 K above a critical fluence results in a rapid increase in damage from the saturation level up to complete disordering, with a buried amorphous layer nucleating in the crystal bulk. However, at 77 K, the saturation effect of lattice disorder in the bulk occurs only for xgreater than or similar to0.1. Based on the analysis of these results for AlGaN and previously reported data for InGaN, we discuss physical mechanisms of the susceptibility of group-III nitrides to ion-beam-induced disordering and to the crystalline-to-amorphous phase transition. (C) 2004 American Institute of Physics

    Poor availability of context-specific evidence hampers decision-making in conservation

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    Evidence-based conservation relies on reliable and relevant evidence. Practitioners often prefer locally relevant studies whose results are more likely to be transferable to the context of planned conservation interventions. To quantify the availability of relevant evidence for amphibian and bird conservation we reviewed Conservation Evidence, a database of quantitative tests of conservation interventions. Studies were geographically clustered, and few locally conducted studies were found in Western sub-Saharan Africa, Russia, South East Asia, and Eastern South America. Globally there were extremely low densities of studies per intervention - fewer than one study within 2000 km of a given location. The availability of relevant evidence was extremely low when we restricted studies to those studying biomes or taxonomic orders containing high percentages of threatened species, compared to the most frequently studied biomes and taxonomic orders. Further constraining the evidence by study design showed that only 17–20% of amphibian and bird studies used reliable designs. Our results highlight the paucity of evidence on the effectiveness of conservation interventions, and the disparity in evidence for local contexts that are frequently studied and those where conservation needs are greatest. Addressing the serious global shortfall in context-specific evidence requires a step change in the frequency of testing conservation interventions, greater use of reliable study designs and standardized metrics, and methodological advances to analyze patchy evidence bases

    Two aspects of decadal ENSO variability modulating the long-term global carbon cycle

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    The El Niño–Southern Oscillation (ENSO) drives variations in terrestrial carbon fluxes by affecting the terrestrial ecosystem via atmospheric teleconnections and thus plays an important role in interannual variability of the global carbon cycle. However, we lack such knowledge on decadal time scales, that is, how the carbon cycle can be affected by decadal variations of ENSO characteristics. Here we examine how, and by how much, decadal ENSO variability affects decadal variability of the global carbon cycle by analyzing a 1,801‐year preindustrial control simulation. We identify two different aspects, together explaining ~36% of the decadal variations in the global carbon cycle. First, climate variations induced by decadal ENSO‐like variability regulate terrestrial carbon flux and hence atmospheric CO2 on decadal time scales. Second, decadal changes in the asymmetrical response of the terrestrial ecosystem, resulting from decadal modulation of ENSO amplitude and asymmetry, rectify the background mean state, thereby generating decadal variability of land carbon fluxes

    Blistering of H-implanted GaN

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    Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: (i) ion energy (from 20 to 150 keV), (ii) ion dose (up to 1.2x10(18) cm(-2)), (iii) implantation temperature (from -196 to 250 degreesC), and (iv) annealing temperature (up to 900 degreesC). Results show that both the onset of blistering and blistering surface patterns strongly depend on implant conditions. This study may have significant technological implications for ion slicing and "etching" of GaN using high-dose implantation with H ions. (C) 2002 American Institute of Physics

    Ageing memory and glassiness of a driven vortex system

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    Many systems in nature, glasses, interfaces and fractures being some examples, cannot equilibrate with their environment, which gives rise to novel and surprising behaviour such as memory effects, ageing and nonlinear dynamics. Unlike their equilibrated counterparts, the dynamics of out-of- equilibrium systems is generally too complex to be captured by simple macroscopic laws. Here we investigate a system that straddles the boundary between glass and crystal: a Bragg glass formed by vortices in a superconductor. We find that the response to an applied force evolves according to a stretched exponential, with the exponent reflecting the deviation from equilibrium. After the force is removed, the system ages with time and its subsequent response time scales linearly with its age (simple ageing), meaning that older systems are slower than younger ones. We show that simple ageing can occur naturally in the presence of sufficient quenched disorder. Moreover, the hierarchical distribution of timescales, arising when chunks of loose vortices cannot move before trapped ones become dislodged, leads to a stretched-exponential response.Comment: 16 pages, 5 figure
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