Reduction of Quantum Noise in Transmittance Estimation Using PhotoneCorrelated Beams

The accuracy of optical measurements at low light levels is limited by the quantum noise of the source and by the random nature of the interaction with the measured object. The source noise may be reduced by use of nonclassical photon-number squeezed light. This paper considers the use of two photon-correlated beams (generated, for example, by spontaneous parametric downconversion) to measure the optical transmittance of an object. The photons of each beam obey a random Poisson process, but are synchronized in time. One beam is used to probe the object while the other is used as a reference providing information on the realization of the random arrival of photons at the object. The additional information available by such measurement may be exploited to improve the accuracy of the measurement. Various estimators, including the maximum likelihood estimator, are considered and their performance is evaluated and compared with the measurement based on single-beam conventional (Poisson) source and maximally squeezed (fixed photon number) source. The performance advantage established in this paper depends on parameters such as the intensity of the source, the transmittance of the object, the quantum efficiency of the detectors, the background noise, and the degree of correlation of the photon numbers in the two beams

Impact-ionization and noise characteristics of thin III-V avalanche photodiodes

It is, by now, well known that McIntyre\u27s localized carrier-multiplication theory cannot explain the suppression of excess noise factor observed in avalanche photodiodes (APDs) that make use of thin multiplication regions. We demonstrate that a carrier multiplication model that incorporates the effects of dead space, as developed earlier by Hayat et al. provides excellent agreement with the impact-ionization and noise characteristics of thin InP, In/sub 0.52/Al/sub 0.48/As, GaAs, and Al/sub 0.2/Ga/sub 0.8/As APDs, with multiplication regions of different widths. We outline a general technique that facilitates the calculation of ionization coefficients for carriers that have traveled a distance exceeding the dead space (enabled carriers), directly from experimental excess-noise-factor data. These coefficients depend on the electric field in exponential fashion and are independent of multiplication width, as expected on physical grounds. The procedure for obtaining the ionization coefficients is used in conjunction with the dead-space-multiplication theory (DSMT) to predict excess noise factor versus mean-gain curves that are in excellent accord with experimental data for thin III-V APDs, for all multiplication-region widths

Statistical Correlation of Gain and Buildup Time in APDs And Its Effects on Receiver Performance

This paper reports a novel recurrence theory that enables us to calculate the exact joint probability density function (pdf) of the random gain and the random avalanche buildup time in avalanche photodiodes (APDs) including the effect of dead space. Such calculations reveal a strong statistical correlation between the gain and the buildup time for all widths of the multiplication region. To facilitate the calculation of the photocurrent statistics in the presence of this correlation, the impulse-response function of the APD is approximately modeled by a function of time whose prespecified shape is appropriately parameterized by two random variables: the gain and the buildup time. The evaluation of the variance of the photocurrent under this model leads to the definition of the shot-noise-equivalent bandwidth of the APD, which captures the statistical correlation between the gain and the buildup time. It is shown that the shot-noise-equivalent bandwidth in GaAs APDs is greater, by approximately 30%, than the traditional buildup-time-limited 3-dB bandwidth, which is calculated from the mean of the impulse-response function. A thorough analysis of the performance of APD-based integrate-and-dump digital receivers reveals that the strong correlation between the gain and the buildup time accentuates intersymbol interference (ISI) noise, and thus, adversely affects receiver sensitivity at high transmission rates beyond previously known limits

Maximum-likelihood image estimation using photon-correlated beams

A theory is presented addressing the fundamental limits of image estimation in a setup that uses two photon-correlated beams. These beams have the property that their photon arrivals, as a point process, are ideally synchronized in time and space. The true image represents the spatial distribution of the optical transmittance (or reflectance) of an object. In this setup, one beam is used to probe the image while the other is used as a reference providing additional information on the actual number of photons impinging on the object. This additional information is exploited to reduce the effect of quantum noise associated with the uncertainty in the number of photons per pixel. A stochastic model for the joint statistics of the two observation matrices is developed and used to obtain a local maximum-likelihood estimator of the image. The model captures the nonideal nature of the correlation between the photons of the beams by means of a simple random translation model. The mean-square error of the estimator is evaluated and compared to the corresponding conventional techniques. Conditions for the performance advantage of the proposed estimator are examined in terms of key system parameters. The theoretical predictions are demonstrated by means of simulation

Quantum optical coherence tomography of a biological sample

Quantum optical coherence tomography (QOCT) makes use of an entangled-photon light source to carry out dispersion-immune axial optical sectioning. We present the first experimental QOCT images of a biological sample: an onion-skin tissue coated with gold nanoparticles. 3D images are presented in the form of 2D sections of different orientations.Comment: 16 Pages, 6 Figure

Quantum Entanglement and the Two-Photon Stokes Parameters

A formalism for two-photon Stokes parameters is introduced to describe the polarization entanglement of photon pairs. This leads to the definition of a degree of two-photon polarization, which describes the extent to which the two photons act as a pair and not as two independent photons. This pair-wise polarization is complementary to the degree of polarization of the individual photons. The approach provided here has a number of advantages over the density matrix formalism: it allows the one- and two-photon features of the state to be separated and offers a visualization of the mixedness of the state of polarization.Comment: 15 pages, 2 figures, accepted for publication in Opt. Com

Gain-bandwidth product optimization of heterostructure avalanche photodiodes

A generalized history-dependent recurrence theory for the time-response analysis is derived for avalanche photodiodes with multilayer, heterojunction multiplication regions. The heterojunction multiplication region considered consists of two layers: a high-bandgap Al/sub 0.6/Ga/sub 0.4/As energy-buildup layer, which serves to heat up the primary electrons, and a GaAs layer, which serves as the primary avalanching layer. The model is used to optimize the gain-bandwidth product (GBP) by appropriate selection of the width of the energy-buildup layer for a given width of the avalanching layer. The enhanced GBP is a direct consequence of the heating of primary electrons in the energy-buildup layer, which results in a reduced first dead space for the carriers that are injected into the avalanche-active GaAs layer. This effect is akin to the initial-energy effect previously shown to enhance the excess-noise factor characteristics in thin avalanche photodiodes (APDs). Calculations show that the GBP optimization is insensitive to the operational gain and the optimized APD also minimizes the excess-noise factor

Information-theoretic criterion for the performance of single-photon avalanche photodiodes

A channel-capacity metric is introduced for assessing the performance of single-photon avalanche photodiodes (SPADs) when used as detectors in laser communication systems. This metric is employed to theoretically optimize, with respect to the device structure and operating voltage, the performance of SPADs with simple InP or In/sub 0.52/Al/sub 0.48/As-InP heterojunction multiplication regions. As the multiplication-region width increases, an increase is predicted in both the peak and the full-width at half-maximum of the channel capacity curve versus the normalized excess voltage. Calculations also show the existence of an optimal In/sub 0.52/Al/sub 0.48/As-InP heterojunction multiplication region that maximizes the peak channel capacity beyond that of InP

Optimized Breakdown Probabilities in Al/sub 0.6/Ga/sub 0.4/As-GaAs Heterojunction Avalanche Photodiodes

Recently, it has been shown that the noise characteristics of heterojunction Al/sub 0.6/Ga/sub 0.4/As-GaAs avalanche photodiodes (APDs) can be optimized by proper selection of the width of the Al/sub 0.6/Ga/sub 0.4/As layer. Similar trends have also been shown theoretically for the bandwidth characteristics. The resulting noise reduction and potential bandwidth enhancement have been attributed to the fact that the high bandgap Al/sub 0.6/Ga/sub 0.4/As layer serves to energize the injected electrons, thereby minimizing their first dead space in the GaAs layer. We show theoretically that the same optimized structures yield optimal breakdown-probability characteristics when the APD is operated in Geiger mode. The steep breakdown-probability characteristics, as a function of the excess bias, of thick multiplication regions (e.g., in a 1000-nm GaAs homojunction) can be mimicked in much thinner optimized Al/sub 0.6/Ga/sub 0.4/As-GaAs APDs (e.g., in a 40-nm Al/sub 0.6/Ga/sub 0.4/As and 200-nm GaAs structure) with the added advantage of having a reduced breakdown voltage (e.g., from 36.5 V to 13.7 V)