BEAM PROFILE MEASUREMENT USING FLYING WIRE MONITORS AT THE J-PARC MAIN RING*

Abstract Transverse beam profiles have been measured using flying wire monitors at the main ring of the Japan Proton Accelerator Research Complex (J-PARC). The flying wire is a beam profile monitor using a thin carbon fiber as a target. The beam is scanned with the wire target at the maximum speed of 5 m/s. The secondary particles from the beam-wire scattering are detected using a scintillation counter as a function of the wire position. The measurement has revealed a characteristic temporal change of the beam profile during the injection period of 120 ms. The multi-particle tracking simulation program, SCTR, taking account of space charge effects has successfully reproduced the beam profiles

Measurement of the forward-backward asymmetries for charm- and bottom-quark pair productions at <s><\sqrt{s}>=58GeV with electron tagging

We have measured, with electron tagging, the forward-backward asymmetries of charm- and bottom-quark pair productions at $$=58.01GeV, based on 23,783 hadronic events selected from a data sample of 197pb$^{-1}$ taken with the TOPAZ detector at TRISTAN. The measured forward-backward asymmetries are $A_{FB}^c = -0.49 \pm 0.20(stat.) \pm 0.08 (sys.)$ and $A_{FB}^b = -0.64 \pm 0.35(stat.) \pm 0.13 (sys.)$, which are consistent with the standard model predictions.Comment: 19 pages, Latex format (article), 5 figures included. to be published in Phys. Lett.

Formation of unique nanocrystalline Cu-In-Se bulk pn homojunctions for opto-electronic devices

Semiconductor pn junctions, integrated in optoelectronic devices require high quality crystals, made by expensive, technically difficult processes. Bulk heterojunction (BHJ) structures offer practical alternatives to circumvent the cost, flexibility and scale-up challenges of crystalline planar pn junctions. Fabrication methods for the current organic or inorganic BHJ structures invariably create interface mismatch and low doping issues. To overcome such issues, we devised an innovative approach, founded on novel inorganic material system that ensued from single-step electrodeposited copper-indium-selenide compounds. Surface analytical microscopies and spectroscopies reveal unusual phenomena, electro-optical properties and quantum effects. They support the formation of highly-ordered, sharp, abrupt 3-dimensional nanoscale pn BHJs that facilitate efficient charge carrier separation and transport, and essentially perform the same functions as crystalline planar pn junctions. This approach offers a low-cost processing platform to create nanocrystalline films, with the attributes necessary for efficient BHJ operation. It allows roll-to-roll processing of flexible devices in simple thin-film form factor.Partial funding for this work is provided by customers of Xcel Energy through a grant from the Renewable Development Fund. The authors gratefully acknowledge sample preparation, analytical contributions and useful discussions with Sharmila Menezes and Yan Li (InterPhases Solar); Senli Guo (Brucker Nano); Terrence McGuckin (Ephemeron Labs); and Nassim Rahimi (HORIBA Scientific). A. Samantilleke acknowledges Prof. L. M. Peter (Bath University, UK) for introducing EER technique

Colouration in amphibians as a reflection of nutritional status : the case of tree frogs in Costa Rica

Colouration has been considered a cue for mating success in many species; ornaments in males often are related to carotenoid mobilization towards feathers and/or skin and can signal general health and nutrition status. However, there are several factors that can also link with status, such as physiological blood parameters and body condition, but there is not substantial evidence which supports the existence of these relationships and interactions in anurans. This study evaluated how body score and blood values interact with colouration in free-range Agalychnis callidryas and Agalychnis annae males. We found significant associations between body condition and plasmatic proteins and haematocrit, as well as between body condition and colour values from the chromaticity diagram. We also demonstrated that there is a significant relation between the glucose and plasmatic protein values that were reflected in the ventral colours of the animals, and haematocrit inversely affected most of those colour values. Significant differences were found between species as well as between populations of A. callidryas, suggesting that despite colour variation, there are also biochemical differences within animals from the same species located in different regions. These data provide information on underlying factors for colouration of male tree frogs in nature, provide insights about the dynamics of several nutrients in the amphibian model and how this could affect the reproductive output of the animals

Optoelectronic characterization of CuInGa(S)2 thin films grown by spray pyrolysis for photovoltaic application

[EN] Copper-indium gallium disulfide (CIGS) is a good absorber for photovoltaic application. Thin films of CIGS were prepared by spray pyrolysis on glass substrates in the ambient atmosphere. The films were characterized by different techniques, such as structural, morphological, optical and electrical properties of CIGS films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), spectrophotometer and Hall effect, respectively. After optimization, the deposited films structure, grain size, and crystallinity became more important with an increase of annealing time at 370 degrees C for 20 min. Transmission electron microscopy (TEM) analysis shows that the interface sheets are well crystallized and the inter planer distance are 0.25 nm, 0.28 nm, and 0.36 nm. The atomic force microscopy (AFM) observation shows that the grain size and roughness can be tolerated by optimizing the annealing time. The strong absorbance and low transmittance were observed for the prepared films with a suitable energy bandgap about 1.46 eV. The Hall effect measurement system examined that CIGS films exhibited optimal electrical properties, resistivity, carrier mobility, and carrier concentration which were determined to be 4.22 x 10(6) omega cm, 6.18 x 10(2) cm(2) V-1 S-1 and 4.22 x 10(6) cm(-3), respectively. The optoelectronic properties of CIGS material recommended being used for the photovoltaic application.Prof. Bouchaib HARTITI, The Senior Associate at ICTP, is very grateful to ICTP for permanent support. Prof. Mohamed Ebn Touhami, Director of the University Center for Analysis, Expertise, Transfer of Technology and Incubation, Kenitra, Morocco, is very grateful to CUA2TI for financial support. Thanks to Doctor Diogo M.F. Santos for the supervision of Amal Bouich's work during her research in CeFEMA research center. The authors also thank researchers from CeFEMA (IST-ULisboa, Portugal) and CUA2TI (FS-Kenitra Morocco) for their help.Bouich, A.; Hartiti, B.; Ullah, S.; Ullah, H.; Ebn Touhami, M.; Santos, DMF.; Marí, B. (2019). Optoelectronic characterization of CuInGa(S)2 thin films grown by spray pyrolysis for photovoltaic application. Applied Physics A. 125(8):1-9. https://doi.org/10.1007/s00339-019-2874-4S191258T. Feurer, P. Reinhard, E. Avancini, B. Bissig, J. Löckinger, P. Fuchs, S. Buecheler, Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications. Prog. Photovolt. Res. Appl. 25(7), 645–667 (2017)A. Zegadi, M.A. Slifkin, M. Djamin, A.E. Hill, R.D. Tomlinson, A photoacoustic study of CuInxGa1− xSe2 alloys. Phys. Status Solidi (A) 133(2), 533–540 (1992)T.H. Sajeesh, A.R. Warrier, C.S. Kartha, K.P. Vijayakumar, Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS. Thin Solid Films 518(15), 4370–4374 (2010)J. Liu, D. Zhuang, H. Luan, M. Cao, M. Xie, X. Li, Preparation of Cu (In, Ga) Se2 thin film by sputtering from Cu (In, Ga) Se2 quaternary target. Progr. Nat. Sci. Mater. Int. 23(2), 133–138 (2013)M.I. Hossain, Fabrication and characterization of CIGS solar cells with In2 S3 buffer layer deposited by PVD technique. Chalcogenide Lett. 9(5), 185–191 (2012)M.A. Mughal, R. Engelken, R. Sharma, Progress in indium (III) sulfide (In2S3) buffer layer deposition techniques for CIS, CIGS, and CdTe-based thin film solar cells. Sol. Energy 120, 131–146 (2015)M. Powalla, M. Cemernjak, J. Eberhardt, F. Kessler, R. Kniese, H.D. Mohring, B. Dimmler, Large-area CIGS modules: Pilot line production and new developments. Sol. Energy Mater Sol. Cells 90(18–19), 3158–3164 (2006)M.E. Calixto, P.J. Sebastian, R.N. Bhattacharya, R. Noufi, Compositional and optoelectronic properties of CIS and CIGS thin films formed by electrodeposition. Sol. Energy Mater. Sol. Cells 59(1–2), 75–84 (1999)S. Jung, S. Ahn, J.H. Yun, J. Gwak, D. Kim, K. Yoon, Effects of Ga contents on properties of CIGS thin films and solar cells fabricated by co-evaporation technique. Curr. Appl. Phys. 10(4), 990–996 (2010)S. R. Ovshinsky, X. Deng, R. Young, U.S. Patent No. 5,231,047. Washington, DC: U.S. Patent and Trademark Office (1993).M. Kaelin, D. Rudmann, A.N. Tiwari, Low cost processing of CIGS thin film solar cells. Sol. Energy 77(6), 749–756 (2004)Fangdan Jiang, Jiayou Feng, Effect of temperature on selenization process of metallic Cu–In alloy precursors. Thin Solid Films 515(4), 1950–1955 (2006)S. Shirakata, Y. Kannaka, H. Hasegawa, T. Kariya, S. Isomura, Properties of Cu (In, Ga) Se2 thin films prepared by chemical spray pyrolysis. Jpn. J. Appl. Phys. 38(9R), 4997 (1999)Y.K. Kumar, G.S. Babu, P.U. Bhaskar, V.S. Raja, Effect of starting-solution pH on the growth of Cu2ZnSnS4 thin films deposited by spray pyrolysis. Phys. Status Solidi (A) 206(7), 1525–1530 (2009)M. Ajili, M. Castagné, N.K. Turki, Characteristics of CuIn1− xGaxS2 thin films synthesized by chemical spray pyrolysis. J. Lumin. 150, 1–7 (2014)B.J. Babu, S. Velumani, A. Kassiba, R. Asomoza, J.A. Chavez-Carvayar, J. Yi, Deposition and characterization of graded Cu (In1-xGax) Se2 thin films by spray pyrolysis. Mater. Chem. Phys. 162, 59–68 (2015)S.F. Varol, G. Babür, G. Çankaya, U. Kölemen, Synthesis of sol–gel derived nano-crystalline ZnO thin films as TCO window layer: effect of sol aging and boron. RSC Adv. 4(100), 56645–56653 (2014)J.A. Frantz, R.Y. Bekele, V.Q. Nguyen, J.S. Sanghera, A. Bruce, S.V. Frolov, I.D. Aggarwal, Cu (In, Ga) Se2 thin films and devices sputtered from a single target without additional selenization. Thin Solid Films 519(22), 7763–7765 (2011)C. Calderón, G. Gordillo, P. Bartolo-Pérez, F. Mesa, Effect of the deposition conditions on the optical, morphological and compositional properties of CuIn1− xGaxSe2 thin films prepared by a multistage process. Revista Mexicana de Física 53(7), 270–273 (2007)D. Schmid, M. Ruckh, F. Grunwald, H.W. Schock, Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2. J. Appl. Phys. 73(6), 2902–2909 (1993)U.C. Matur, S. Akyol, N. Baydoğan, H. Cimenoglu, The optical properties of CIGS thin films derived by sol-gel dip coating process at different withdrawal speed. Proc. Soc. Behav. Sci. 195, 1762–1767 (2015)A. Bouich, B. Hartiti, S. Ullah, M.E. Touhami, B. Mari, D.M.F. Santos, Investigation of the optical properties of CuIn (Se, S)2 thin films for photovoltaic application. Mater. Today Proc. 13, 663–669 (2019)K. Matsumura, T. Fujita, H. Itoh, D. Fujita, Characterization of carrier concentration in CIGS solar cells by scanning capacitance microscopy. Meas. Sci. Technol. 25(4), 044020 (2014)A. Bouich, B. Hartiti, S. Ullah, H. Ullah, M.E. Touhami, D.M.F. Santos, B. Mari, Experimental, theoretical, and numerical simulation of the performance of CuInxGa(1–x) S2 based solar cells. Optik 183, 137–147 (2019

The Dyad Symmetry Element of Epstein-Barr Virus Is a Dominant but Dispensable Replication Origin

OriP, the latent origin of Epstein-Barr virus (EBV), consists of two essential elements: the dyad symmetry (DS) and the family of repeats (FR). The function of these elements has been predominantly analyzed in plasmids transfected into transformed cells. Here, we examined the molecular functions of DS in its native genomic context and at an ectopic position in the mini-EBV episome. Mini-EBV plasmids contain 41% of the EBV genome including all information required for the proliferation of human B cells. Both FR and DS function independently of their genomic context. We show that DS is the most active origin of replication present in the mini-EBV genome regardless of its location, and it is characterized by the binding of the origin recognition complex (ORC) allowing subsequent replication initiation. Surprisingly, the integrity of oriP is not required for the formation of the pre-replicative complex (pre-RC) at or near DS. In addition we show that initiation events occurring at sites other than the DS are also limited to once per cell cycle and that they are ORC-dependent. The deletion of DS increases initiation from alternative origins, which are normally used very infrequently in the mini-EBV genome. The sequence-independent distribution of ORC-binding, pre-RC-assembly, and initiation patterns indicates that a large number of silent origins are present in the mini-EBV genome. We conclude that, in mini-EBV genomes lacking the DS element, the absence of a strong ORC binding site results in an increase of ORC binding at dispersed sites

Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiodes grown under varying conditions by molecular beam epitaxy and subjected to postgrowth rapid thermal annealing (RTA) at a series of temperatures. It is found that the device performance of the nonoptimally grown GaInNAs p-i-n structures, with nominal compositions of 10% In and 3.8% N, can be improved significantly by the RTA treatment to match that of optimally grown structures. The optimally annealed devices exhibit overall improvement in optical and electrical characteristics, including increased photoluminescence brightness, reduced density of deep-level traps, reduced series resistance resulting from the GaAs/GaInNAs heterointerface, lower dark current, and significantly lower background doping density, all of which can be attributed to the reduced structural disorder in the GaInNAs alloy.© 2012 TMS