2D Fourier Transform Spectroscopy of exciton-polaritons and their interactions

We investigate polariton-polariton interactions in a semiconductor microcavity through two-dimensional Fourier transform (2DFT) spectroscopy. We observe, in addition to the lower-lower and the upper-upper polariton self-interaction, a lower-upper cross-interaction. This appears as separated peaks in the on-diagonal and off-diagonal part of 2DFT spectra. Moreover, we elucidate the role of the polariton dispersion through a fine structure in the 2DFT spectrum. Simulations, based on lower-upper polariton basis Gross-Pitaevskii equations including both self and cross-interactions, result in a 2DFT spectra in qualitative agreement with experiments

A Transport Analysis of the BEEM Spectroscopy of Au/Si Schottky Barriers

A systematic transport study of the ballistic electron emission microscopy (BEEM) of Au/Si(100) and Au/Si(111) Schottky barriers for different thicknesses of the metal layer and different temperatures is presented. It is shown that the existing experimental data are compatible with a recently predicted bandstructure-induced non-forward electron propagation through the Au(111) layer.Comment: 5 pages, Latex-APS, 1 postscript figure, http://www.icmm.csic.es/Pandres/pedro.htm. Phys. Stat. Sol. (b) (to appear), HCIS-10 Conf, Berlin 199

Synchronized and Desynchronized Phases of Exciton-Polariton Condensates in the Presence of Disorder

Condensation of exciton-polaritons in semiconductor microcavities takes place despite in plane disorder. Below the critical density the inhomogeneity of the potential seen by the polaritons strongly limits the spatial extension of the ground state. Above the critical density, in presence of weak disorder, this limitation is spontaneously overcome by the non linear interaction, resulting in an extended synchronized phase. This mechanism is clearly evidenced by spatial and spectral studies, coupled to interferometric measurements. In case of strong disorder, several non phase-locked (independent) condensates can be evidenced. The transition from synchronized phase to desynchronized phase is addressed considering multiple realizations of the disorder.Comment: 11 pages, 4 figures,corrected typos, added figure

Comment on "Linear wave dynamics explains observations attributed to dark-solitons in a polariton quantum fluid"

In a recent preprint (arXiv:1401.1128v1) Cilibrizzi and co-workers report experiments and simulations showing the scattering of polaritons against a localised obstacle in a semiconductor microcavity. The authors observe in the linear excitation regime the formation of density and phase patterns reminiscent of those expected in the non-linear regime from the nucleation of dark solitons. Based on this observation, they conclude that previous theoretical and experimental reports on dark solitons in a polariton system should be revised. Here we comment why the results from Cilibrizzi et al. take place in a very different regime than previous investigations on dark soliton nucleation and do not reproduce all the signatures of its rich nonlinear phenomenology. First of all, Cilibrizzi et al. consider a particular type of radial excitation that strongly determines the observed patterns, while in previous reports the excitation has a plane-wave profile. Most importantly, the nonlinear relation between phase jump, soliton width and fluid velocity, and the existence of a critical velocity with the time-dependent formation of vortex-antivortex pairs are absent in the linear regime. In previous reports about dark soliton and half-dark soliton nucleation in a polariton fluid, the distinctive dark soliton physics is supported both by theory (analytical and numerical) and experiments (both continuous wave and pulsed excitation).Comment: 4 pages, 2 figure

Time-resolved cathodoluminescence of InGaAs/AlGaAs tetrahedral pyramidal quantum structures

An original time resolved cathodoluminescence set up has been used to investigate the optical properties and the carrier transport in quantum structures located in InGaAs/AlGaAs tetrahedral pyramids. An InGaAs quantum dot formed just below the top of the pyramid is connected to four types of low-dimensional barriers: InGaAs quantum wires on the edges of the pyramid, InGaAs quantum wells on the (111)A facets and segregated AlGaAs vertical quantum wire and AlGaAs vertical quantum wells formed at the centre and at the pyramid edges. Experiments were performed at a temperature of 92K, an accelerating voltage of 10kV and a beam probe current of 10pA. The cathodoluminescence spectrum shows five luminescence peaks. Rise and decay times for the different emission wavelengths provide a clear confirmation of the peak attribution (previously done with other techniques) to the different nanostructures grown in a pyramid. Moreover, experimental results suggest a scenario where carriers diffuse from the lateral quantum structures towards the central structures (the InGaAs quantum dot and the segregated AlGaAs vertical quantum wire) via the InGaAs quantum wires on the edges of the pyramid. According to this hypothesis, we have modeled the carrier diffusion along these quantum wires. An ambipolar carrier mobility of 1400cm2/V s allows to obtain a good fit to all temporal dependence

Dynamics of unidirectional phonon-assisted transport of photoexcited carriers in step-graded In-x(Al0.17Ga0.83)(1-x)As/Al0.17Ga0.83As multiple quantum wells

The dynamics of perpendicular transport of photoexcited carriers assisted by phonon scattering is investigated in a novel step-graded Inx(Al0.17Ga0.83)1-xAs quantum-well heterostructure by measuring the temperature dependence of spectrally and temporally resolved photoluminescence (PL). When builtin potential gradients are present in the quantum-well heterostructure due to variations in the In mole fraction (x) in the well, carriers that are thermally released by the particular well move unidirectionally from shallower to deeper wells. That is, asymmetric unidirectional motion of photoexcited carriers is possible via phonon-assisted activation above the barrier band-edge state. We have directly measured this perpendicular motion of photoexcited carriers by monitoring the transient PL signals from the different wells, which are spectrally separated. A rate equation analysis rigorously explains the dynamical changes of the PL signal intensities from the quantum wells as a function of lattice temperature. Our study of PL dynamics proves the asymmetric perpendicular flow of photoexcited carriers and the capture by the deeper quantum wells, providing firm evidence for the dynamical carrier flow and capture processes in the novel heterostructure