Electron charge transport in non-peripherally substituted copper phthalocyanine

Bottom-gate, bottom-contact organic thin film transistors (OTFTs) were fabricated using solvent soluble copper-1,4,8,11,15,18,22,25-octakis(hexyl)phthalocyanine as the active semiconductor layer. The compound was deposited as 70 nm thick spin-coated films onto gold source-drain electrodes supported on octadecyltrichlorosilane treated 250 nm thick SiO2 gate insulator. The analysis of experimental results showed the n-type field effect behaviour. Devices annealed at 100 oC under vacuum were found to exhibit the field-effect mobility of 0.0989 cm2 V-1 s-1, with an on/off current modulation ratio of ∼106, a reduced threshold voltage of 0.7 V and a sub-threshold swing of 2.12 V decade-1. The variations in surface morphology of the devices are found reflected considerably in the electrical measurements. The device contact resistance was found to be decreased as the gate bias increased and also with the annealing

Assessment of Carbon Storage and Biomass on Minelands Reclaimed to Grassland Environments Using Landsat Spectral Indices

This study investigated carbon (C) storage and biomass in grasslands of West Virginia reclaimed surface minesites. Mine-related disturbance and subsequent reclamation may be an important component of C cycling. Biomass and C storage generally increased for the first five years after reclamation, but then declined, suggesting a nonlinear pattern to vegetation recovery. Three 2007 Landsat 5 Thematic Mapper and Landsat 7 Enhanced Thematic Mapper Plus images were used to assess the potential to predict biomass from raw red and near infrared radiance, the tasseled cap transformation (TC), and four vegetation indices [normalized difference vegetation index, enhanced vegetation index (EVI), triangular vegetation index, and the soil adjusted vegetation index]. TC greenness and EVI were most strongly correlated with biomass and illustrate a modest potential for monitoring vegetation recovery in reclaimed minelands. Additionally, a number of regression models that included age since reclamation and spectral indices were statistically significant suggesting a temporal recovery pattern amongst minesites in this study

Death within 8 years after childhood convulsive status epilepticus:a population-based study

The risk of long-term mortality and its predictors following convulsive status epilepticus in childhood are uncertain. We report mortality within 8 years after an episode of convulsive status epilepticus, and investigate its predictors from a paediatric, prospective, population-based study from north London, UK. In the current study, we followed-up a cohort previously ascertained during a surveillance study of convulsive status epilepticus in childhood. After determining the survival status of the cohort members, we defined cause of death as that listed on their death certificates. We estimated a standardized mortality ratio to compare mortality in our cohort with that expected in the reference population. Multivariable Cox regression analysis was used to investigate any association between the clinical and demographic factors at the time of status epilepticus and subsequent risk of death. The overall case fatality was 11% (95% confidence interval 7.5–16.2%); seven children died within 30 days of their episode of convulsive status epilepticus and 16 during follow-up. The overall mortality in our cohort was 46 times greater than expected in the reference population, and was predominantly due to higher mortality in children who had pre-existing clinically significant neurological impairments when they had their acute episode of convulsive status epilepticus. Children without prior neurological impairment who survived their acute episode of convulsive status epilepticus were not at a significantly increased risk of death during follow-up. There were no deaths in children following prolonged febrile convulsions and idiopathic convulsive status epilepticus. A quarter of deaths during follow-up were associated with intractable seizures/convulsive status epilepticus, and the rest died as a complication of their underlying medical condition. On regression analysis, presence of clinically significant neurological impairments prior to convulsive status epilepticus was the only independent risk factor for mortality. In conclusion, there is a high risk of death within 8 years following childhood convulsive status epilepticus but most deaths are not seizure related. Presence of pre-existing clinically significant neurological impairments at the time of convulsive status epilepticus is the main risk factor for mortality within 8 years after the acute episode. The attributable role of convulsive status epilepticus on mortality remains uncertain, but appears less than is generally perceived

Pathotype variation of barley powdery mildew in Western Australia

Barley powdery mildew caused by the fungus Blumeria graminis f. sp. hordei (Bgh) has emerged as the most damaging disease of barley in Western Australia (WA). Many of the available cultivars display high levels of disease in the field when climatic conditions are conducive. As a result, fungicides have become the main method of disease control in the last 10 years. Different types and sources of genetic disease resistance are available but to optimise their deployment it is necessary to evaluate the spectrum of pathotypes present in the pathogen population. Sixty isolates of Bgh were collected in the 2009 season from 9 locations, single spored and characterised by infection on reference barley lines and cultivars. Eighteen unique pathotypes were resolved. Virulence against many of the R-genes in the reference lines was present in at least one pathotype. Isolates were virulent against 16 out of a total of 23 resistance gene combinations. Undefeated resistance genes included the major R-genes Mla-6, Mla-9, Ml-ra and the combinations of Mla-1 plus Mla-A12 and Mla-6 plus Mla-14 and Mla-13 plus Ml-Ru3 together with the recessive resistance gene mlo-5. There was significant pathotype spatial differentiation suggesting limited gene flow between different regions with WA or localised selection pressures and proliferation. On the basis of the results we recommend a number of strategies to manage powdery mildew disease levels within WA

Effects of deposition time and post-deposition annealing on the physical and chemical properties of electrodeposited CdS thin films for solar cell application

CdS thin films were cathodically electrodeposited by means of a two-electrode deposition system for different durations. The films were characterised for their structural, optical, morphological and compositional properties using x-ray diffraction (XRD), spectrophotometry, scanning electron microscopy (SEM) and energy dispersive x-ray (EDX) respectively. The results obtained show that the physical and chemical properties of these films are significantly influenced by the deposition time and post-deposition annealing. This influence manifests more in the as-deposited materials than in the annealed ones. XRD results show that the crystallite sizes of the different films are in the range (9.4 – 65.8) nm and (16.4 – 66.0) nm in the as-deposited and annealed forms respectively. Optical measurements show that the absorption coefficients are in the range (2.7×104 – 6.7×104) cm-1 and (4.3×104 – 7.2×104) cm-1 respectively for as-deposited and annealed films. The refractive index is in the range (2.40 – 2.60) for as-deposited films and come to the value of 2.37 after annealing. The extinction coefficient varies in the range (0.1 – 0.3) in asdeposited films and becomes 0.1 in annealed films. The estimated energy bandgap of the films is in the range (2.48 – 2.50) eV for as-deposited films and becomes 2.42 eV for all annealed films. EDX results show that all the films are S-rich in chemical composition with fairly uniform Cd/S ratio after annealing. The results show that annealing improves the qualities of the films and deposition time can be used to control the film thickness. Keywords: Electrodeposition; two-electrode system; CdS; annealing; deposition time; thin-film

Investigation of phase transformations and corrosion resistance in Co/CoCo2O4 nanowires and their potential use as a basis for lithium-ion batteries

The paper is devoted to the study of the effect of thermal annealing on the change in the structural properties and phase composition of metal Co nanostructures, as well as the prospects of their use as anode materials for lithium-ion batteries. During the study, a four-stage phase transition in the structure of nanowires consisting of successive transformations of the structure (Со-FCC/Co-HCP) → (Со-FCС) → (Со-FCC/СоСо2О4) → (СоСо2О4), accompanied by uniform oxidation of the structure of nanowires with an increase in temperature above 400 °C. In this case, an increase in temperature to 700 °C leads to a partial destruction of the oxide layer and surface degradation of nanostructures. During life tests, it was found that the lifetime for oxide nanostructures exceeds 500 charge/discharge cycles, for the initial nanostructures and annealed at a temperature of 300 °С, the lifetimes are 297 and 411 cycles, respectively. The prospects of using Co/CoCo2O4 nanowires as the basis for lithium-ion batteries is shown. © 2019, The Author(s)

Mutations in the Neuronal Vesicular SNARE VAMP2 Affect Synaptic Membrane Fusion and Impair Human Neurodevelopment

VAMP2 encodes the vesicular SNARE protein VAMP2 (also called synaptobrevin-2). Together with its partners syntaxin-1A and synaptosomal-associated protein 25 (SNAP25), VAMP2 mediates fusion of synaptic vesicles to release neurotransmitters. VAMP2 is essential for vesicular exocytosis and activity-dependent neurotransmitter release. Here, we report five heterozygous de novo mutations in VAMP2 in unrelated individuals presenting with a neurodevelopmental disorder characterized by axial hypotonia (which had been present since birth), intellectual disability, and autistic features. In total, we identified two single-amino-acid deletions and three non-synonymous variants affecting conserved residues within the C terminus of the VAMP2 SNARE motif. Affected individuals carrying de novo non-synonymous variants involving the C-terminal region presented a more severe phenotype with additional neurological features, including central visual impairment, hyperkinetic movement disorder, and epilepsy or electroencephalography abnormalities. Reconstituted fusion involving a lipid-mixing assay indicated impairment in vesicle fusion as one of the possible associated disease mechanisms. The genetic synaptopathy caused by VAMP2 de novo mutations highlights the key roles of this gene in human brain development and function

Mutations in the Neuronal Vesicular SNARE VAMP2 Affect Synaptic Membrane Fusion and Impair Human Neurodevelopment

VAMP2 encodes the vesicular SNARE protein VAMP2 (also called synaptobrevin-2). Together with its partners syntaxin-1A and synaptosomal-associated protein 25 (SNAP25), VAMP2 mediates fusion of synaptic vesicles to release neurotransmitters. VAMP2 is essential for vesicular exocytosis and activity-dependent neurotransmitter release. Here, we report five heterozygous de novo mutations in VAMP2 in unrelated individuals presenting with a neurodevelopmental disorder characterized by axial hypotonia (which had been present since birth), intellectual disability, and autistic features. In total, we identified two single-amino-acid deletions and three non-synonymous variants affecting conserved residues within the C terminus of the VAMP2 SNARE motif. Affected individuals carrying de novo non-synonymous variants involving the C-terminal region presented a more severe phenotype with additional neurological features, including central visual impairment, hyperkinetic movement disorder, and epilepsy or electroencephalography abnormalities. Reconstituted fusion involving a lipid-mixing assay indicated impairment in vesicle fusion as one of the possible associated disease mechanisms. The genetic synaptopathy caused by VAMP2 de novo mutations highlights the key roles of this gene in human brain development and function