234 research outputs found
Anisotropic optical gain in m-plane InxGa1-xN/GaN multiple quantum well laser diode wafers fabricated on the low defect density freestanding GaN substrates
Ultrafast carrier relaxation in GaN, In_(0.05)Ga_(0.95)N and an In_(0.05)Ga_(0.95)/In_(0.15)Ga_(0.85)N Multiple Quantum Well
Room temperature, wavelength non-degenerate ultrafast pump/probe measurements
were performed on GaN and InGaN epilayers and an InGaN multiple quantum well
structure. Carrier relaxation dynamics were investigated as a function of
excitation wavelength and intensity. Spectrally-resolved sub-picosecond
relaxation due to carrier redistribution and QW capture was found to depend
sensitively on the wavelength of pump excitation. Moreover, for pump
intensities above a threshold of 100 microJ/cm2, all samples demonstrated an
additional emission feature arising from stimulated emission (SE). SE is
evidenced as accelerated relaxation (< 10 ps) in the pump-probe data,
fundamentally altering the re-distribution of carriers. Once SE and carrier
redistribution is completed, a slower relaxation of up to 1 ns for GaN and
InGaN epilayers, and 660 ps for the MQW sample, indicates carrier recombination
through spontaneous emission.Comment: submitted to Phys. Rev.
Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects
科研費報告書収録論文(課題番号:18350092/研究代表者:大友明/高効率酸化亜鉛系青色・紫外発光素子の開発
Light polarization characteristics of m-plane AlxGa1-xN films suffering from in-plane anisotropic tensile stresses
Self-regulated charge transfer and band tilt in nm-scale polar GaN films
To date, the generic polarization of Bernardini, Fiorentini and Vanderbilt
(PBFV) has been widely used to address the issue of polarity in III-V nitride
semiconductors, but improvements in nitride materials and the performance of
optoelectronic devices have been limited. The current first-principles
calculation for the electronic structures of nm-scale [0001] GaN films show
that the internal electric fields and the band tilt of these films are in
opposite direction to those predicted by PBFV. Additionally, it is determined
that an intrinsic self-regulated charge transfer across the film limits the
electrostatic potential difference across the film, which renders the local
conduction band energy minimum (at the Ga-terminated surface) approximately
equal to the local valence band energy maximum (at the N-terminated surface).
This effect is found to occur in films thicker than ~4nm
Effects of macroscopic polarization in III-V nitride multi-quantum-wells
Huge built-in electric fields have been predicted to exist in wurtzite III-V
nitrides thin films and multilayers. Such fields originate from heterointerface
discontinuities of the macroscopic bulk polarization of the nitrides. Here we
discuss the background theory, the role of spontaneous polarization in this
context, and the practical implications of built-in polarization fields in
nitride nanostructures. To support our arguments, we present detailed
self-consistent tight-binding simulations of typical nitride QW structures in
which polarization effects are dominant.Comment: 11 pages, 9 figures, uses revtex/epsf. submitted to PR
Electron-phonon renormalization of the absorption edge of the cuprous halides
Compared to most tetrahedral semiconductors, the temperature dependence of
the absorption edges of the cuprous halides (CuCl, CuBr, CuI) is very small.
CuCl and CuBr show a small increase of the gap with increasing
temperature, with a change in the slope of vs. at around 150 K: above
this temperature, the variation of with becomes even smaller. This
unusual behavior has been clarified for CuCl by measurements of the low
temperature gap vs. the isotopic masses of both constituents, yielding an
anomalous negative shift with increasing copper mass. Here we report the
isotope effects of Cu and Br on the gap of CuBr, and that of Cu on the gap of
CuI. The measured isotope effects allow us to understand the corresponding
temperature dependences, which we also report, to our knowledge for the first
time, in the case of CuI. These results enable us to develop a more
quantitative understanding of the phenomena mentioned for the three halides,
and to interpret other anomalies reported for the temperature dependence of the
absorption gap in copper and silver chalcogenides; similarities to the behavior
observed for the copper chalcopyrites are also pointed out.Comment: 14 pages, 5 figures, submitted to Phys. Rev.
Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density freestanding GaN substrates
Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
Recombination dynamics of the 268 nm photoluminescence (PL) peak in a quaternary Al0.53In0.11Ga0.36N/Al0.58In0.02Ga0.40N multiple quantum well (MQW) grown on relaxed AlGaN templates were studied. Although the polarization field in the compressively strained Al0.53In0.11Ga0.36N wells was as high as 1.6 MV/cm, the value of integrated PL intensity at 300 K divided by that at 8 K (eta(int)) was as high as 1.2%. The value was similar to that obtained for the 285 nm PL peak in an Al0.30Ga0.70N/Al0.70Ga0.30N MQW (1.3%), though the A1N molar fraction in the wells was higher by a factor of 1.7. According to these results and the fact that time-resolved PL signal exhibited a stretched exponential decay shape, the improved eta(int) of the AlInGaN wells was attributed to a beneficial effect of the exciton localization as is the case with InGaN alloys; doping or alloying with InN was confirmed to work also on AlGaN in improving eta(int) to realize deep UV optoelectronic devices
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